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Vladimir N. Strocov

Vladimir N. Strocov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-conphysics.ins-detcond-mat.otherphysics.comp-phquant-ph

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Published work

31 published item(s)

preprint2023arXiv

Unravelling the Nature of Spin Excitations Disentangled from Charge Contributions in a Doped Cuprate Superconductor

The nature of the spin excitations in superconducting cuprates is a key question toward a unified understanding of the cuprate physics from long-range antiferromagnetism to superconductivity. The intense spin excitations up to the over-doped regime revealed by resonant inelastic X-ray scattering bring new insights as well as questions like how to understand their persistence or their relation to the collective excitations in ordered magnets (magnons). Here, we study the evolution of the spin excitations upon hole-doping the superconducting cuprate Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ by disentangling the spin from the charge excitations in the experimental cross section. We compare our experimental results against density matrix renormalization group calculations for a $t$-$J$-like model on a square lattice. Our results unambiguously confirm the persistence of the spin excitations, which are closely connected to the persistence of short-range magnetic correlations up to high doping. This suggests that the spin excitations in hole-doped cuprates are related to magnons -- albeit short-ranged.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electron-momentum dependence of electron-phonon coupling underlies dramatic phonon renormalization in YNi$_2$B$_2$C

Electron-phonon coupling, i.e., the scattering of lattice vibrations by electrons and vice versa, is ubiquitous in solids and can lead to emergent ground states such as superconductivity and charge-density wave order. Strong coupling of phonons to electrons near the Fermi surface, which reduces the phonon lifetimes and broadens the phonon peaks in scattering experiments, is often associated with Fermi surface nesting. Here, we show that strong phonon broadening can occur in the absence of both Fermi surface nesting and lattice anharmonicity, if electron-phonon coupling is strongly enhanced for specific values of electron-momentum, k. We use inelastic neutron scattering, soft x-ray angle-resolved photoemission spectroscopy measurements and ab-initio lattice dynamical and electronic band structure calculations to demonstrate this scenario in the highly anisotropic tetragonal electron-phonon superconductor YNi$_2$B$_2$C. This new scenario likely applies to a wide range of compounds.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Visualizing the out-of-plane electronic dispersions in an intercalated transition metal dichalcogenide

Layered transition metal dichalcogenides have rich phase diagram and they feature two dimensionality on numerous physical properties. Co1/3NbS2 is one of the newest members of this family where Co atoms are intercalated into the Van der Waals gaps between NbS2 layers. We study the three-dimensional electronic band structure of Co1/3NbS2 using both surface and bulk sensitive angle-resolved photoemission spectroscopy. We show that the electronic bands do not fit into the rigid-band-shift picture after the Co intercalation. Instead, Co1/3NbS2 displays a different orbital character near the Fermi level compared to the pristine NbS2 compound and has a clear band dispersion in kz direction despite its layered structure. Our photoemission study demonstrates the out-of-plane electronic correlations introduced by the Co intercalation, thus offering a new perspective on this compound. Finally, we propose how Fermi level tuning could lead to exotic phases such as spin density wave instability.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

What's knot to like? Observation of a linked loop quantum state

Quantum phases can be classified by topological invariants, which take on discrete values capturing global information about the quantum state. Over the past decades, these invariants have come to play a central role in describing matter, providing the foundation for understanding superfluids, magnets, the quantum Hall effect, topological insulators, Weyl semimetals and other phenomena. Here we report a remarkable linking number (knot theory) invariant associated with loops of electronic band crossings in a mirror-symmetric ferromagnet. Using state-of-the-art spectroscopic methods, we directly observe three intertwined degeneracy loops in the material's bulk Brillouin zone three-torus, $\mathbb{T}^3$. We find that each loop links each other loop twice. Through systematic spectroscopic investigation of this linked loop quantum state, we explicitly draw its link diagram and conclude, in analogy with knot theory, that it exhibits linking number $(2,2,2)$, providing a direct determination of the invariant structure from the experimental data. On the surface of our samples, we further predict and observe Seifert boundary states protected by the bulk linked loops, suggestive of a remarkable Seifert bulk-boundary correspondence. Our observation of a quantum loop link motivates the application of knot theory to the exploration of exotic properties of quantum matter.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Charge ordering in Ir dimers in the ground state of Ba$_5$AlIr$_2$O$_{11}$

It has been well established experimentally that the interplay of electronic correlations and spin-orbit interactions in Ir$^{4+}$ and Ir$^{5+}$ oxides results in insulating J$_{\rm eff}$=1/2 and J$_{\rm eff}$=0 ground states, respectively. However, in compounds where the structural dimerization of iridum ions is favourable, the direct Ir $d$--$d$ hybridisation can be significant and takes a key role. Here, we investigate the effects of direct Ir $d$--$d$ hybridisation in comparison with electronic correlations and spin-orbit coupling in Ba$_5$AlIr$_2$O$_{11}$, a compound with Ir dimers. Using a combination of $ab$ $initio$ many-body wave function quantum chemistry calculations and resonant inelastic X-ray scattering (RIXS) experiments, we elucidate the electronic structure of Ba$_5$AlIr$_2$O$_{11}$. We find excellent agreement between the calculated and the measured spin-orbit excitations. Contrary to the expectations, the analysis of the many-body wave function shows that the two Ir (Ir$^{4+}$ and Ir$^{5+}$) ions in the Ir$_2$O$_9$ dimer unit in this compound preserve their local J$_{\rm eff}$ character close to 1/2 and 0, respectively. The local point group symmetry at each of the Ir sites assumes an important role, significantly limiting the direct $d$--$d$ hybridisation. Our results emphasize that minute details in the local crystal field (CF) environment can lead to dramatic differences in electronic states in iridates and 5$d$ oxides in general.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Chiral Topological Semimetal with Multifold Band Crossings and Long Fermi arcs

Topological semimetals in crystals with a chiral structure (which possess a handedness due to a lack of mirror and inversion symmetries) are expected to display numerous exotic physical phenomena, including fermionic excitations with large topological charge [1], long Fermi arc surface states [2,3], unusual magnetotransport [4] and lattice dynamics [5], as well as a quantized response to circularly polarized light [6]. To date, all experimentally confirmed topological semimetals exist in crystals that contain mirror operations, meaning that these properties do not appear. Here, we show that AlPt is a structurally chiral topological semimetal that hosts new fourfold and sixfold fermions, which can be viewed as a higher spin eneralization of Weyl fermions without equivalence in elementary particle physics. These multifold fermions are located at high symmetry points and have Chern numbers larger than those in Weyl semimetals, thus resulting in multiple Fermi arcs that span the full diagonal of the surface Brillouin zone. By imaging these long Fermi arcs, we experimentally determine the magnitude and sign of their Chern number, allowing us to relate their dispersion to the handedness of their host crystal.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electron-polaron dichotomy of charge carriers in perovskite oxides

Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here, we use angle-resolved photoemission spectroscopy to visualize how electrons delocalize and couple to phonons in CaMnO3. We show the development of a Fermi surface where mobile electrons coexist with heavier carriers, strongly coupled polarons. The latter originate from a boost of the electron-phonon interaction (EPI). This finding brings to light the role that the EPI can play in MITs even caused by purely electronic mechanisms. Our discovery of the EPI-induced dichotomy of the charge carriers explains the transport response of Ce-doped CaMnO3 and suggests strategies to engineer quantum matter from TMOs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic structure of InAs and InSb surfaces: density functional theory and angle-resolved photoemission spectroscopy

The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, we study the electronic structure of InAs(001), InAs(111), and InSb(110) surfaces using a combination of density functional theory (DFT) and angle-resolved photoemission spectroscopy (ARPES). We were able to perform large-scale first principles simulations and capture effects of different surface reconstructions by using DFT calculations with a machine-learned Hubbard U correction [npj Comput. Mater. 6, 180 (2020)]. To facilitate direct comparison with ARPES results, we implemented a "bulk unfolding" scheme by projecting the calculated band structure of a supercell surface slab model onto the bulk primitive cell. For all three surfaces, we find a good agreement between DFT calculations and ARPES. For InAs(001), the simulations clarify the effect of the surface reconstruction. Different reconstructions are found to produce distinctive surface states. For InAs(111) and InSb(110), the simulations help elucidate the effect of oxidation. Owing to larger charge transfer from As to O than from Sb to O, oxidation of InAs(111) leads to significant band bending and produces an electron pocket, whereas oxidation of InSb(110) does not. Our combined theoretical and experimental results may inform the design of quantum devices based on InAs and InSb semiconductors, e.g., topological qubits utilizing the Majorana zero modes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

hv2-concept breaks the photon-count limit of RIXS instrumentation

Upon progressive refinement of energy resolution, the conventional RIXS instrumentation reaches the limit where the bandwidth of incident photons becomes insufficient to deliver an acceptable photon-count rate. We show that the RIXS spectra as a function of energy loss are essentially invariant to their integration over incident energies within the core-hole lifetime. This fact permits the RIXS instrumentation based on the hv2-concept to utilize incident synchrotron radiation over the whole core-hole lifetime window without any compromise on the energy-loss resolution, thereby breaking the photon-count limit.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Hybridization between the ligand $p$ band and Fe-3$d$ orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb

(Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ($T_{\rm C}$) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb including the Fe-3$d$ impurity band (IB), to unveil the mechanism of ferromagnetism in (Ga,Fe)Sb. We find that the VB dispersion in (Ga$_{0.95}$,Fe$_{0.05}$)Sb observed by SX-ARPES is similar to that of GaSb, indicating that the doped Fe atoms hardly affect the band dispersion. The Fe-3$d$ resonant ARPES spectra demonstrate that the Fe-3$d$ IB crosses the Fermi level ($E_{\rm F}$) and hybridizes with the VB of GaSb. These observations indicate that the VB structure of (Ga$_{0.95}$,Fe$_{0.05}$)Sb is consistent with that of the IB model which is based on double-exchange interaction between the localized 3$d$ electrons of the magnetic impurities. The results indicate that the ferromagnetism in (Ga,Fe)Sb is formed by the hybridization of the Fe-3$d$ IB with the ligand $p$ band of GaSb.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Signature of band inversion in the antiferromagnetic phase of axion insulator candidate EuIn2As2

We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antiferromagnetic phase, the band structure exhibits a marked reconstruction characterized by the emergence of a "M"-shaped bulk band near the Fermi level. The qualitative agreement with first-principles band-structure calculations suggests the occurrence of bulk-band inversion at the Gamma point in the antiferromagnetic phase. We suggest that EuIn2As2 provides a good opportunity to study the exotic quantum phases associated with possible axion-insulator phase.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Weyl-fermions, Fermi-arcs, and minority-spin carriers in ferromagnetic CoS2

The pyrite compound CoS2 has been intensively studied in the past due to its itinerant ferromagnetism and potential for half-metallicity, which make it a promising material for spintronic applications. However, its electronic structure remains only poorly understood. Here we use complementary bulk- and surface-sensitive angle-resolved photoelectron spectroscopy and ab-initio calculations to provide a complete picture of its band structure. We discover Weyl-cones at the Fermi-level, which presents CoS2 in a new light as a rare member of the recently discovered class of magnetic topological metals. We directly observe the topological Fermi-arc surface states that link the Weyl-nodes, which will influence the performance of CoS2 as a spin-injector by modifying its spin-polarization at interfaces. Additionally, we are for the first time able to directly observe a minority-spin bulk electron pocket in the corner of the Brillouin zone, which proves that CoS2 cannot be a true half-metal. Beyond settling the longstanding debate about half-metallicity in CoS2, our results provide a prime example of how the topology of magnetic materials can affect their use in spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Artificial quantum confinement in LAO3/STO heterostructure

Heterostructures of transition metal oxides (TMO) perovskites represent an ideal platform to explore exotic phenomena involving the complex interplay between the spin, charge, orbital and lattice degrees of freedom available in these compounds. At the interface between such materials, this interplay can lead to phenomena that are present in none of the original constituents such as the formation of the interfacial 2D electron system (2DES) discovered at the LAO3/STO3 (LAO/STO) interface. In samples prepared by growing a LAO layer onto a STO substrate, the 2DES is confined in a band bending potential well, whose width is set by the interface charge density and the STO dielectric properties, and determines the electronic band structure. Growing LAO (2 nm) /STO (x nm)/LAO (2 nm) heterostructures on STO substrates allows us to control the extension of the confining potential of the top 2DES via the thickness of the STO layer. In such samples, we explore the dependence of the electronic structure on the width of the confining potential using soft X-ray ARPES combined with ab-initio calculations. The results indicate that varying the thickness of the STO film modifies the quantization of the 3d t2g bands and, interestingly, redistributes the charge between the dxy and dxz/dyz bands.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]

Clarification of the position of the Fermi level ($E_\mathrm{F}$) is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor Ga$_{1-x}$Mn$_x$As (GaMnAs). In a recent publication, Souma $et$ $al$. [Sci. Rep. $\mathbf{6}$, 27266 (2016)], have investigated the band structure and the $E_\mathrm{F}$ position of GaMnAs using angle-resolved photoemission spectroscopy (ARPES), and concluded that $E_\mathrm{F}$ is located in the valence band (VB). However, this conclusion contradicts a number of recent experimental results for GaMnAs, which showed that $E_\mathrm{F}$ is located above the VB maximum in the impurity band (IB). Here, we show an alternative interpretation of their ARPES experiments, which is consistent with those recent experiments and supports the picture that $E_\mathrm{F}$ is located above the VB maximum in the IB.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics

Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is determined by the interface band alignment. In particular, the band offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to probe the electronic structure of the buried EuO/Si interface with momentum resolution and chemical specificity. The band structure reveals a conduction band offset of 1.0 eV attesting the technological potential of the EuO/Si system.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Discovery of Lorentz-violating Weyl fermion semimetal state in LaAlGe materials

We report theoretical and experimental discovery of Lorentz-violating Weyl fermion semimetal type-II state in the LaAlGe class of materials. Previously type-II Weyl state was predicted in WTe2 materials which remains unrealized in surface experiments. We show theoretically and experimentally that LaAlGe class of materials are the robust platforms for the study of type-II Weyl physics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ground state oxygen holes and the metal-insulator transition in the negative charge transfer rare-earth nickelates

The metal-insulator transitions and the intriguing physical properties of rare-earth perovskite nickelates have attracted considerable attention in recent years. Nonetheless, a complete understanding of these materials remains elusive. Here, taking a NdNiO3 thin film as a representative example, we utilize a combination of x-ray absorption and resonant inelastic x-ray scattering (RIXS) spectroscopies to resolve important aspects of the complex electronic structure of the rare-earth nickelates. The unusual coexistence of bound and continuum excitations observed in the RIXS spectra provides strong evidence for the abundance of oxygen 2p holes in the ground state of these materials. Using cluster calculations and Anderson impurity model interpretation, we show that these distinct spectral signatures arise from a Ni 3d8 configuration along with holes in the oxygen 2p valence band, confirming suggestions that these materials do not obey a conventional positive charge-transfer picture, but instead exhibit a negative charge-transfer energy, in line with recent models interpreting the metal to insulator transition in terms of bond disproportionation.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Intra-layer doping effects on the high-energy magnetic correlations in NaFeAs

We have used Resonant Inelastic X-ray Scattering (RIXS) and dynamical susceptibility calculations to study the magnetic excitations in NaFe$_{1-x}$Co$_x$As (x = 0, 0.03, and 0.08). Despite a relatively low ordered magnetic moment, collective magnetic modes are observed in parent compounds (x = 0) and persist in optimally (x = 0.03) and overdoped (x = 0.08) samples. Their magnetic bandwidths are unaffected by doping within the range investigated. High energy magnetic excitations in iron pnictides are robust against doping, and present irrespectively of the ordered magnetic moment. Nevertheless, Co doping slightly reduces the overall magnetic spectral weight, differently from previous studies on hole-doped BaFe$_{2}$As$_{2}$, where it was observed constant. Finally, we demonstrate that the doping evolution of magnetic modes is different for the dopants being inside or outside the Fe-As layer.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Presence of magnetic excitations in SmFeAsO

We measured dispersive spin excitations in $\mathrm{SmFeAsO}$, parent compound of $\mathrm{SmFeAsO_{\text{1-x}}F_{\text{x}}}$ one of the highest temperature superconductors of Fe pnictides (T$_{\text{C}}\approx$55~K). We determine the magnetic excitations to disperse with a bandwidth energy of ca 170 meV at (0.47, 0) and (0.34, 0.34), which merges into the elastic line approaching the $Γ$ point. Comparing our results with other parent Fe pnictides, we show the importance of structural parameters for the magnetic excitation spectrum, with small modifications of the tetrahedron angles and As height strongly affecting the magnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Concept of multichannel spin-resolving electron analyzer based on Mott scattering

Concept of a multichannel electron spin detector based on optical imaging principles and Mott scattering (iMott) is presented. A multichannel electron image produced by standard angle-resolving (photo) electron analyzer or microscope is re-imaged by an electrostatic lens at an accelerating voltage of 40 keV onto the Au target. Quasi-elastic electrons bearing spin asymmetry of the Mott scattering are imaged by magnetic lenses onto position-sensitive electron CCDs whose differential signals yield the multichannel spin asymmetry image. Fundamental advantages of this concept include acceptance of inherently divergent electron sources from the electron analyzer or microscope focal plane as well as small aberrations achieved by virtue of high accelerating voltages, as demonstrated by extensive ray-tracing analysis. The efficiency gain compared to the single-channel Mott detector can be a factor of more than 1e4 which opens new prospects of spin-resolved spectroscopies in application not only to standard bulk and surface systems (Rashba effect, topological insulators, etc.) but also to buried heterostructures. The simultaneous spin detection and fast CCD readout enable efficient use of the iMott detectors at X-ray FEL facilities.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electron-lattice interactions strongly renormalize the charge transfer energy in the spin-chain cuprate Li$_2$CuO$_2$

Strongly correlated insulators are broadly divided into two classes: Mott-Hubbard insulators, where the insulating gap is driven by the Coulomb repulsion $U$ on the transition-metal cation, and charge-transfer insulators, where the gap is driven by the charge transfer energy $Δ$ between the cation and the ligand anions. The relative magnitudes of $U$ and $Δ$ determine which class a material belongs to, and subsequently the nature of its low-energy excitations. These energy scales are typically understood through the local chemistry of the active ions. Here we show that the situation is more complex in the low-dimensional charge transfer insulator Li$_\mathrm{2}$CuO$_\mathrm{2}$, where $Δ$ has a large non-electronic component. Combining resonant inelastic x-ray scattering with detailed modeling, we determine how the elementary lattice, charge, spin, and orbital excitations are entangled in this material. This results in a large lattice-driven renormalization of $Δ$, which significantly reshapes the fundamental electronic properties of Li$_\mathrm{2}$CuO$_\mathrm{2}$.

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preprint2015arXiv

Experimental discovery of a topological Weyl semimetal state in TaP

Weyl semimetals are expected to open up new horizons in physics and materials science because they provide the first realization of Weyl fermions and exhibit protected Fermi arc surface states. However, they had been found to be extremely rare in nature. Recently, a family of compounds, consisting of TaAs, TaP, NbAs and NbP was predicted as Weyl semimetal candidates. Here, we experimentally realize a Weyl semimetal state in TaP. Using photoemission spectroscopy, we directly observe the Weyl fermion cones and nodes in the bulk and the Fermi arcs on the surface. Moreover, we find that the surface states show an unexpectedly rich structure, including both topological Fermi arcs and several topologically-trivial closed contours in the vicinity of the Weyl points, which provides a promising platform to study the interplay between topological and trivial surface states on a Weyl semimetal's surface. We directly demonstrate the bulk-boundary correspondence and hence establish the topologically nontrivial nature of the Weyl semimetal state in TaP, by resolving the net number of chiral edge modes on a closed path that encloses the Weyl node. This also provides, for the first time, an experimentally practical approach to demonstrating a bulk Weyl fermion from a surface state dispersion measured in photoemission.

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preprint2015arXiv

Sputtering induced re-emergence of the topological surface state in Bi$_2$Se$_3$

We study the fate of the surface states of Bi$_2$Se$_3$ under disorder with strength larger than the bulk gap, caused by neon sputtering and nonmagnetic adsorbates. We find that neon sputtering introduces strong but dilute defects, which can be modeled by a unitary impurity distribution, whereas adsorbates, such as water vapor or carbon monoxide, are best described by Gaussian disorder. Remarkably, these two disorder types have a dramatically different effect on the surface states. Our soft x-ray ARPES measurements combined with numerical simulations show that unitary surface disorder pushes the Dirac state to inward quintuplet layers, burying it below an insulating surface layer. As a consequence, the surface spectral function becomes weaker, but retains its quasiparticle peak. This is in contrast to Gaussian disorder, which smears out the quasiparticle peak completely. At the surface of Bi$_2$Se$_3$, the effects of Gaussian disorder can be reduced by removing surface adsorbates using neon sputtering, which, however, introduces unitary scatterers. Since unitary disorder has a weaker effect than Gaussian disorder, the ARPES signal of the Dirac surface state becomes sharper upon sputtering.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Doping-dependent band structure of LaAlO$_{3}$/SrTiO$_{3}$ interfaces by soft x-ray polarization-controlled resonant angle-resolved photoemission

Polarization-controlled synchrotron radiation was used to map the electronic structure of buried conducting interfaces of LaAlO$_3$/SrTiO$_3$ in a resonant angle-resolved photoemission experiment. A strong dependence on the light polarization of the Fermi surface and band dispersions is demonstrated, highlighting the distinct Ti 3d orbitals involved in 2D conduction. Samples with different 2D doping levels were prepared and measured by photoemission, revealing different band occupancies and Fermi surface shapes. A direct comparison between the photoemission measurements and advanced first-principle calculations carried out for different 3d-band fillings is presented in conjunction with the 2D carrier concentration obtained from transport measurements.

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preprint2013arXiv

Unveiling the impurity band inducing ferromagnetism in magnetic semiconductor (Ga,Mn)As

(Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental and theoretical studies, the mechanism of the ferromagnetism in (Ga,Mn)As still remains a puzzling enigma. In this Letter, we use soft x-ray angle-resolved photoemission spectroscopy to positively identify the ferromagnetic Mn 3d-derived impurity band in (Ga,Mn)As. The band appears hybridized with the light-hole band of the host GaAs. These findings conclude the picture of the valence band structure of (Ga,Mn)As disputed for more than a decade. The non-dispersive character of the IB and its location in vicinity of the valence-band maximum indicate that the Mn 3d-derived impurity band is formed as a split-off Mn-impurity state predicted by the Anderson impurity model. Responsible for the ferromagnetism in (Ga,Mn)As is the transport of hole carriers in the impurity band.

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preprint2012arXiv

Determining the Short-Range Spin Correlations in Cuprate Chain Materials with Resonant Inelastic X-ray Scattering

We report a high-resolution resonant inelastic soft x-ray scattering study of the quantum magnetic spin-chain materials Li2CuO2 and CuGeO3. By tuning the incoming photon energy to the oxygen K-edge, a strong excitation around 3.5 eV energy loss is clearly resolved for both materials. Comparing the experimental data to many-body calculations, we identify this excitation as a Zhang-Rice singlet exciton on neighboring CuO4-plaquettes. We demonstrate that the strong temperature dependence of the inelastic scattering related to this high-energy exciton enables to probe short-range spin correlations on the 1 meV scale with outstanding sensitivity.

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preprint2012arXiv

Digging up bulk band dispersion buried under a passivation layer

Atomically controlled crystal growth of thin films has established foundations of nanotechnology aimed at the development of advanced functional devices. Crystallization under non-equilibrium conditions allows engineering of new materials with their atomically-flat interfaces in the heterostructures exhibiting novel physical properties. From a fundamental point of view, knowledge of the electronic structures of thin films and their interfaces is indispensable to understand the origins of their functionality which further evolves into realistic device application. In view of extreme surface sensitivity of the conventional vacuum-ultraviolet (VUV) angle-resolved photoemission spectroscopy (ARPES), with a probing depth of several angstroms, experiments on thin films have to use sophisticated in-situ sample transfer systems to avoid surface contamination. In this Letter, we put forward a method to circumvent these difficulties using soft X-ray (SX) ARPES. A GaAs:Be thin film in our samples was protected by an amorphous As layer with an thickness of $\sim 1$ nm exceeding the probing depth of the VUV photoemission with photon energy $hν$ around 100 eV. The increase of the probing depth with increasing $hν$ towards the SX region has clearly exposed the bulk band dispersion without any surface treatment. Any contributions from potential interface states between the thin film and the amorphous capping layer has been below the detection limit. Our results demonstrate that SX-ARPES enables the observation of coherent three-dimensional band dispersion of buried heterostructure layers through an amorphous capping layer, breaking through the necessity of surface cleaning of thin film samples. Thereby, this opens new frontiers in diagnostics of authentic momentum-resolved electronic structure of protected thin-film heterostructures.

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preprint2012arXiv

Optimization of the X-ray incidence angle in photoelectron spectrometers

Interplay of the angle dependent X-ray reflectivity and absorption with the photoelectron attenuation length in the photoelectron emission process determine the optimal X-ray incidence angle which maximizes the photoelectron signal. Calculations in a wide VUV through hard-X-ray energy range show that the optimal angle goes with energy progressively more grazing from a few tens of degrees at 50 eV to about one degree at 3.5 keV accompanied by the intensity gain increasing up to a few tens of times as long as the X-ray footprint on the sample stays within the analyzer field of view. This trend is fairly material independent. The obtained results bear immediate implications for design of the (synchrotron based) photoelectron spectrometers.

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preprint2012arXiv

Surface and bulk Fermiology and band dispersion in non-centrosymmetric BiTeI

BiTeI has a layered and non-centrosymmetric structure where strong spin-orbit interaction leads to a giant spin splitting in the bulk bands. Here we present high-resolution angle-resolved photoemission (ARPES) data in the UV and soft x-ray regime that clearly disentangle the surface from the bulk electronic structure. Spin-resolved UV-ARPES measurements on opposite, non-equivalent surfaces show identical spin structures, thus clarifying the surface state character. Soft x-ray ARPES data clearly reveal the spindle-torus shape of the bulk Fermi surface, induced by the spin-orbit interaction.

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preprint2012arXiv

Three-Dimensional Fermiology by Soft-X-Ray ARPES: Origin of Charge Density Waves in VSe2

Electronic structure of crystalline materials is their fundamental characteristic which is the basis of almost all their physical and chemical properties. Angle-resolved photoemission spectroscopy (ARPES) is the main experimental tool to study all electronic structure aspects with resolution in k-space. However, its application to three-dimensional (3D) materials suffers from a fundamental problem of ill-defined surface-perpendicular wavevector kz. Here, we achieve sharp definition of kz to enable precise navigation in 3D k space by pushing ARPES into the soft-X-ray photon energy range. Essential to break through the notorious problem of small photoexcitation cross-section was an advanced photon flux performance of our instrumentation. We explore the electronic structure of a transition metal dichalcogenide VSe2 which develops charge density waves (CDWs) possessing exotic 3D character. We experimentally identify nesting of its 3D Fermi surface (FS) as the precursor for these CDWs. Our study demonstrates an immense potential of soft-X-ray ARPES (SX-ARPES) to resolve various aspects of 3D electronic structure.

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preprint2011arXiv

Two-Spinon and Orbital Excitations of the Spin-Peierls System TiOCl

We combine high-resolution resonant inelastic x-ray scattering with cluster calculations utilizing a recently derived effective magnetic scattering operator to analyze the polarization, excitation energy, and momentum dependent excitation spectrum of the low-dimensional quantum magnet TiOCl in the range expected for orbital and magnetic excitations (0 - 2.5 eV). Ti 3d orbital excitations yield complete information on the temperature-dependent crystal-field splitting. In the spin-Peierls phase we observe a dispersive two-spinon excitation and estimate the inter- and intra-dimer magnetic exchange coupling from a comparison to cluster calculations.

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