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Venkatraman Gopalan

Venkatraman Gopalan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.opticscond-mat.mes-hallcond-mat.str-elmath.GTmath.HOphysics.app-ph

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Published work

28 published item(s)

preprint2022arXiv

High-throughput screening assisted discovery of a stable layered anti-ferromagnetic semiconductor: CdFeP2Se6

Recent advances in two-dimensional (2D) magnetism have heightened interest in layered magnetic materials due to their potential for spintronics. In particular, layered semiconducting antiferromagnets exhibit intriguing low-dimensional semiconducting behavior with both charge and spin as carrier controls. However, synthesis of these compounds is challenging and remains rare. Here, we conducted firstprinciples based high-throughput search to screen potentially stable mixed metal phosphorous trichalcogenides (MM'P2X6, where M and M' are transition metals and X is a chalcogenide) that have a wide range of tunable bandgaps and interesting magnetic properties. Among the potential candidates, we successfully synthesized a stable semiconducting layered magnetic material, CdFeP2Se6, that exhibits a short-range antiferromagnetic order at TN = 21 K with an indirect band gap of 2.23 eV. Our work suggests that highthroughput screening assisted synthesis be an effective method for layered magnetic materials discovery.

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preprint2022arXiv

SnP$_2$S$_6$: A Promising Infrared Nonlinear Optical Crystal with Strong Non-Resonant Second Harmonic Generation and Phase-matchability

High-power infrared laser systems with broadband tunability are of great importance due to their wide range of applications in spectroscopy and free-space communications. These systems require nonlinear optical (NLO) crystals for wavelength up/down conversion using sum/difference frequency generation, respectively. NLO crystals need to satisfy many competing criteria, including large nonlinear optical susceptibility, large laser induced damage threshold (LIDT), wide transparency range and phase-matchability. Here, we report bulk single crystals of SnP_2S_6 with a large non-resonant SHG coefficient of d33= 53 pm/V at 1550nm and a large LIDT of 350 GW/cm^2 for femtosecond laser pulses. It also exhibits a broad transparency range from 0.54 μm to 8.5μm (bandgap of ~2.3 eV) and can be both Type I and Type II phase-matched. The complete linear and SHG tensors are measured as well as predicted by first principles calculations, and they are in excellent agreement. A proximate double-resonance condition in the electronic band structure for both the fundamental and the SHG light is shown to enhance the non-resonant SHG response. Therefore, SnP2S6 is an outstanding candidate for infrared laser applications.

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preprint2022arXiv

Ultrasensitive electrode-free and co-catalyst-free detection of nanomoles per hour hydrogen evolution for the discovery of new photocatalysts

High throughput theoretical methods are increasingly used to identify promising photocatalytic materials for hydrogen generation from water as a clean source of energy. While most promising water splitting candidates require co-catalyst loading and electrical biasing, computational costs to predict them apriori becomes large. It is therefore important to identify bare, bias-free semiconductor photocatalysts with small initial hydrogen production rates, often in the range of tens of nano-mols per hour, as these can become highly efficient with further co-catalyst loading and biasing. Here we report a sensitive hydrogen detection system suitable for screening new photocatalysts. The hydrogen evolution rate of the prototypical rutile TiO2 loaded with 0.3 % wt Pt is detected to be 78.0+-0.8 μmol/h/0.04g, comparable with the rates reported in the literature. In contrast, sensitivity to an ultralow evolution rate of 11.4+-0.3 nmol/h/0.04g is demonstrated for bare polycrystalline TiO2 without electrical bias. Two candidate photocatalysts, ZnFe2O4 (18.1+-0.2 nmol/h/0.04g) and Ca2PbO4 (35.6+-0.5 nmol/h/0.04g), without electrical bias or co-catalyst loading, are demonstrated to be potentially superior to bare TiO2. This work expands the techniques available for sensitive detection of photocatalytic processes towards much faster screening of new candidate photocatalytic materials in their bare state

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preprint2021arXiv

Giant Non-resonant Infrared Second Order Nonlinearity in $γ$-NaAsSe$_2$

Infrared laser systems are vital for applications in spectroscopy, communications, and biomedical devices, where infrared nonlinear optical (NLO) crystals are required for broadband frequency down-conversion. Such crystals need to have high non-resonant NLO coefficients, a large bandgap, low absorption coefficient, phase-matchability among other competing demands, e.g., a larger bandgap leads to smaller NLO coefficients. Here, we report the successful growth of single crystals of $γ$-NaAsSe$_2$ that exhibit a giant second harmonic generation (SHG) susceptibility of d$_{11}$=590 pm V$^{-1}$ at 2$μ$m wavelength; this is ~ eighteen times larger than that of commercial AgGaSe$_2$ while retaining a similar bandgap of ~1.87eV, making it an outstanding candidate for quasi-phase-matched devices utilizing d$_{11}$. In addition, $γ$-NaAsSe$_2$ is both Type I and Type II phase-matchable, and has a transparency range up to 16$μ$m wavelength. Thus $γ$-NaAsSe2 is a promising bulk NLO crystal for infrared laser applications.

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preprint2021arXiv

Interlayer magnetophononic coupling in MnBi2Te4

The emergence of magnetism in quantum materials creates a platform to realize spin-based applications in spintronics, magnetic memory, and quantum information science. A key to unlocking new functionalities in these materials is the discovery of tunable coupling between spins and other microscopic degrees of freedom. We present evidence for interlayer magnetophononic coupling in the layered magnetic topological insulator MnBi2Te4. Employing magneto-Raman spectroscopy, we observe anomalies in phonon scattering intensities across magnetic field-driven phase transitions, despite the absence of discernible static structural changes. This behavior is a consequence of a magnetophononic wave-mixing process that allows for the excitation of zone-boundary phonons that are otherwise 'forbidden' by momentum conservation. Our microscopic model based on density functional theory calculations reveals that this phenomenon can be attributed to phonons modulating the interlayer exchange coupling. Moreover, signatures of magnetophononic coupling are also observed in the time domain through the ultrafast excitation and detection of coherent phonons across magnetic transitions. In light of the intimate connection between magnetism and topology in MnBi2Te4, the magnetophononic coupling represents an important step towards coherent on-demand manipulation of magnetic topological phases.

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preprint2020arXiv

Achieving Minimal Heat Conductivity by Ballistic Confinement in Phononic Metalattices

Controlling the thermal conductivity of semiconductors is of practical interest in optimizing the performance of thermoelectric and phononic devices. The insertion of inclusions of nanometer size in a semiconductor is an effective means of achieving such control; it has been proposed that the thermal conductivity of silicon could be reduced to 1 W/m/K using this approach and that a minimum in the heat conductivity would be reached for some optimal size of the inclusions. Yet the practical verification of this design rule has been limited. In this work, we address this question by studying the thermal properties of silicon metalattices that consist of a periodic distribution of spherical inclusions with radii from 7 to 30 nm, embedded into silicon. Experimental measurements confirm that the thermal conductivity of silicon metalattices is as low as 1 W/m/K for silica inclusions, and that this value can be further reduced to 0.16 W/m/K for silicon metalattices with empty pores. A detailed model of ballistic phonon transport suggests that this thermal conductivity is close to the lowest achievable by tuning the radius and spacing of the periodic inhomogeneities. This study is a significant step in elucidating the scaling laws that dictate ballistic heat transport at the nanoscale in silicon and other semiconductors.

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preprint2020arXiv

Antisymmetry: Fundamentals and Applications

Symmetry is fundamental to understanding our physical world. An antisymmetry operation switches between two different states of a trait, such as two time-states, position-states, charge-states, spin-states, chemical-species etc. This review covers the fundamental concepts of antisymmetry, and focuses on four antisymmetries, namely spatial inversion in point groups, time reversal, distortion reversal and wedge reversion. The distinction between classical and quantum mechanical descriptions of time reversal is presented. Applications of these antisymmetries in crystallography, diffraction, determining the form of property tensors, classifying distortion pathways in transition state theory, finding minimum energy pathways, diffusion, magnetic structures and properties, ferroelectric and multiferroic switching, classifying physical properties in arbitrary dimensions, and antisymmetry-protected topological phenomena are presented.

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preprint2015arXiv

A Topological Approach to Creating any Pulli Kolam, an Artform from Southern India

Pulli kolam is a ubiquitous art form in south India. It involves drawing a line looped around a collection of dots (pullis) place on a plane such that three mandatory rules are followed: all line orbits should be closed, all dots are encircled and no two lines can overlap over a finite length. The mathematical foundation for this art form has attracted attention over the years. In this work, we propose a simple 5-step topological method by which one can systematically draw all possible kolams for any number of dots N arranged in any spatial configuration on a surface.

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preprint2015arXiv

Linear roto-antiferromagnetic effect in multiferroics: physical manifestations

Using the theory of symmetry and the microscopic model we predicted the possibility of a linear roto-antiferromagnetic effect in the perovskites with structural antiferrodistortive and antiferromagnetic long-range ordering and found the necessary conditions of its occurrence. The main physical manifestations of this effect are the smearing of the antiferromagnetic transition and the jump of the specific heat near it. In the absence of external fields linear roto-antiferromagnetic coupling can induce a weak antiferromagnetic ordering above the Neel temperature, but below the temperature of antiferrodistortive transition. Therefore, there is the possibility of observing weak antiferromagnetism in multiferroics such as bismuth ferrite (BiFeO3) at temperatures T>TN, for which the Neel temperature TN is about 645 K, and the antiferrodistortive transition temperature is about 1200 K. By quantitative comparison with experiment we made estimations of the linear roto-antiferromagnetic effect in the solid solutions of multiferroic Bi1-xRxFeO3 (R=La, Nd).

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preprint2015arXiv

The Antisymmetry of Distortions

Distortions are ubiquitous in nature. Under perturbations such as stresses, fields, or other changes, a physical system reconfigures by following a path from one state to another; this path, often a collection of atomic trajectories, describes a distortion. Here we introduce an antisymmetry operation called distortion reversal, 1*, that reverses a distortion pathway. The symmetry of a distortion pathway is then uniquely defined by a distortion group involving 1*; it has the same form as a magnetic group that involves time reversal, 1'. Given its isomorphism to magnetic groups, distortion groups could potentially have commensurate impact in the study of distortions as the magnetic groups have had in the study of magnetic structures. Distortion symmetry has important implications for a range of phenomena such as structural and electronic phase transitions, diffusion, molecular conformational changes, vibrations, reaction pathways, and interface dynamics.

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preprint2014arXiv

Rotomagnetic couplings influence on the magnetic properties of antiferrodistortive antiferromagnets

Within the framework of Landau-Ginzburg-Devonshire (LGD) phenomenological theory we consider the possibility to control properties of paraelectric antiferromagnets via biquadratic rotomagnetic coupling with and without external magnetic and electric field application. We use EuTiO3 as a prototype with relatively well-known material parameters. Surprisingly strong influence of this coupling practically on all the properties without external fields was obtained in the temperature region with coexistence of antiferromagnetic and antiferrodistorted phases i.e. in multiferroic state. In particular, the observed Neel temperature TN (5.5 K) was shown to be defined by rotomagnetic coupling, while without this coupling TN appeared to be much higher (26 K). For small or high enough rotomagnetic coupling constant value the antiferromagnetic phase transition order appeared to be the second or the first order respectively. The essential influence of rotomagnetic coupling on the form and value of magnetic and dielectric permittivity was also forecasted. The rotomagnetic coupling along with rotoelectric one opens the additional way to control the form of the phase diagrams by application of external magnetic or electric field. The critical value of the electric field (for antiferromagnetic to ferromagnetic phase transition) appeared essentially smaller than the one calculated without rotomagnetic coupling that can be important for applications.

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preprint2013arXiv

Double Antisymmetry and the Rotation-Reversal Space Groups

Rotation-reversal symmetry was recently introduced to generalize the symmetry classification of rigid static rotations in crystals such as tilted octahedra in perovskite structures and tilted tetrahedral in silica structures. This operation has important implications for crystallographic group theory, namely that new symmetry groups are necessary to properly describe observations of rotation-reversal symmetry in crystals. When both rotation-reversal symmetry and time-reversal symmetry are considered in conjunction with space group symmetry, it is found that there are 17,803 types of symmetry, called double antisymmetry, which a crystal structure can exhibit. These symmetry groups have the potential to advance understanding of polyhedral rotations in crystals, the magnetic structure of crystals, and the coupling thereof. The full listing of the double antisymmetry space groups can be found in the supplemental materials of the present work and online at our website: http://sites.psu.edu/gopalan/research/symmetry/

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preprint2013arXiv

Low-symmetry monoclinic phase stabilized by oxygen octahedra rotations in thin strained EuxSr1-xTiO3 films

Using Landau-Ginzburg-Devonshire theory and phase field modeling, we explore the complex interplay between the long-range structural order parameter (oxygen octahedron rotations) and polarization in EuxSr1-xTiO3 thin epitaxial films. In biaxially tensile strained films, we discover the presence of a low symmetry monoclinic phase with in-plane ferroelectric polarization that is stabilized by antiferrodistortive oxygen octahedra tilts. The monoclinic phase is stable in a wide temperature range, and is characterized by the large number of energetically equivalent polar and structural twin domains, which stimulates easy twinning of the film and thus enhances its effective piezoelectric response. The flexoelectric coupling and rotostriction give rise to additional spontaneous polarization, piezo- and pyro-electricity in the ferroelastic twin boundaries.

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preprint2013arXiv

Non-Ising Character of a Ferroelectric Wall Arises from a Flexoelectric Effect

Using the classic ferroelectric BaTiO$_3$ as an example, we show that the 180 degree ferroelectric domain wall, long considered to be of Ising-type and charge neural, contains both Bloch and Neel type polarization components, and is thus charged. The bound charge density at the wall may reach as high as 10$^6$~10$^7$ Cm$^{-3}$. It is demonstrated that the flexoelectric effect arising from stress inhomogeneity is responsible for the additional Bloch and Neel polarization components. The magnitudes of these additional components are determined by the competing depolarization and flexoelectric fields.

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preprint2013arXiv

Novel multiferroics with ferromagnetic phase induced in paraelectric antiferromagnets by electric field application

The phase diagram of a quantum paraelectric antiferromagnet EuTiO3 under an external electric field was calculated using Landau-Ginzburg-Devonshire theory. It was shown that the application of an external electric field E leads to the appearance of a ferromagnetic phase due to the magnetoelectric coupling. In particular, electric field application decreases the transition temperature TAFM to antiferromagnetic (AFM) phase and induces ferromagnetic (FM) phase, so that at some E field larger than the critical field (Ecr), TFM becomes higher than TAFM and the FM phase appears. Note that Ecr increases and magnetization decreases as the temperature increases. The value of the critical field Ecr = 0.40*10^6 V/cm we calculated appeared close to the value Ecr = 0.5*10^6 V/cm obtained recently by Ryan et al. with the help of density functional theory for EuTiO3 film under a compressive strain produced by substrate. At the fields E >0.83*10^6 V/cm, AFM disappears for all considered temperatures and so FM becomes the only stable magnetic phase. We find that ferromagnetic phase can be induced by an E-field in other paraelectric antiferromagnet oxides with a positive AFM-type magnetoelectric (ME) coupling coefficient and negative FM-type ME coupling coefficient. In particular, the critical E-field was estimated for another paraelectric antiferromagnet Sr0.7Ba0.3MnO3 as 0.2x10^5V/cm at 0 K. Analysis of the dependence of magnetization and antimagnetization on the external electric field and the polarization induced by the field, which yields the magnetoelectric coupling, is reported. The results show the possibility to control multiferroicity, including the FM and AFM phases, with help of an electric field application.

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preprint2013arXiv

Structural and Electronic Recovery Pathways of a Photoexcited Ultrathin VO2 Film

The structural and electronic recovery pathways of a photoexcited ultrathin VO2 film at nanosecond time scales have been studied using time-resolved x-ray diffraction and transient optical absorption techniques. The recovery pathways from the tetragonal metallic phase to the monoclinic insulating phase are highly dependent on the optical pump fluence. At pump fluences higher than the saturation fluence of 14.7 mJ/cm2, we observed a transient structural state with lattice parameter larger than that of the tetragonal phase, which is decoupled from the metal-to-insulator phase transition. Subsequently, the photoexcited VO2 film recovered to the ground state at characteristic times dependent upon the pump fluence, as a result of heat transport from the film to the substrate. We present a procedure to measure the time-resolved film temperature by correlating photoexcited and temperature-dependent x-ray diffraction measurements. A thermal transport model that incorporates changes of the thermal parameters across the phase transition reproduces the observed recovery dynamics. The optical excitation and fast recovery of ultrathin VO2 films provides a practical method to reversibly switch between the monoclinic insulating and tetragonal metallic state at nanosecond time scales.

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preprint2013arXiv

Universal emergence of spatially-modulated structures induced by flexo-antiferrodistortive coupling in multiferroics

We proved the existence of a universal flexo-antiferrodistortive coupling as a necessary complement to the well-known flexoelectric coupling. The coupling is universal for all antiferrodistortive systems and can lead to the formation of incommensurate, spatially-modulated phases in multiferroics. Our analysis can provide a self-consistent mesoscopic explanation for a broad range of modulated domain structures observed experimentally in multiferroics.

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preprint2012arXiv

Conductivity of twin walls - surface junctions in ferroelastics: interplay of deformation potential, octahedral rotations, improper ferroelectricity and flexoelectric coupling

Electronic and structural phenomena at the twin domain wall-surface junctions in the ferroelastic materials are analyzed. Carriers accumulation caused by the strain-induced band structure changes originated via the deformation potential mechanism, structural order parameter gradient, rotostriction and flexoelectric coupling is explored. Approximate analytical results show that inhomogeneous elastic strains, which exist in the vicinity of the twin walls - surface junctions due to the rotostriction coupling, decrease the local band gap via the deformation potential and flexoelectric coupling mechanisms. This is the direct mechanism of the twin walls static conductivity in ferroelastics and, by extension, in multiferroics and ferroelectrics. On the other hand, flexoelectric and rotostriction coupling leads to the appearance of the improper polarization and electric fields proportional to the structural order parameter gradient in the vicinity of the twin walls - surface junctions. The "flexo-roto" fields leading to the carrier accumulation are considered as indirect mechanism of the twin walls conductivity. Comparison of the direct and indirect mechanisms illustrates complex range of phenomena directly responsible for domain walls static conductivity in materials with multiple order parameters.

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preprint2012arXiv

Surface polar states and pyroelectricity in ferroelastics induced by flexo-roto field

Theoretical analysis based on the Landau-Ginzburg-Devonshire (LGD) theory is used to show that the joint action of flexoelectric effect and rotostriction leads to a large spontaneous in-plane polarization (~ 1-5 muC/cm2) and pyroelectric coefficient (~10^-3 C/m2K) in the vicinity of surfaces of otherwise non-ferroelectric ferroelastics, such as SrTiO3, with static octahedral rotations. The origin of the improper polarization and pyroelectricity is an electric field we name flexo-roto field whose strength is proportional to the convolution of the flexoelectric and rotostriction tensors with octahedral tilts and their gradients. Flexo-roto field should exist at surfaces and interfaces in all structures with static octahedral rotations, and thus it can induce surface polar states and pyroelectricity in a large class of otherwise nonpolar materials.

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preprint2011arXiv

A Phenomenological Thermodynamic Potential for CaTiO3 Single Crystal

The antiferrodistortive (AFD) structural transitions of calcium titanate (CaTiO3) at ambient pressure have been extensively studied during the last few years. It is found none of the AFD polymorphs is polar or ferroelectric. However, it was recently shown theoretically and later experimentally confirmed that a ferroelectric transition in CaTiO3 can be induced by tensile strains. The ferroelectric instability is believed to be strongly coupled to the AFD soft modes. In this article, we present a complete thermodynamic potential for describing the coupling between the AFD and ferroelectric phase transitions. We analyzed the dependence of transition temperatures on stress and strain condition. Based on this potential, a (001) CaTiO3 thin film diagram was constructed. The results show good agreement with available experimental observations. The strong suppression of ferroelectric transition by the AFD transition is discussed.

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preprint2011arXiv

Interfacial Polarization and Pyroelectricity in Antiferrodistortive Structures Induced by a Flexoelectric Effect and Rotostriction

Theoretical analysis based on the Landau-Ginzburg-Devonshire (LGD) theory is used to show that the product effect of flexoelectricity and rotostriction can lead to a spontaneous polarization in the vicinity of antiphase boundaries, ferroelastic twin walls, surfaces and interfaces in the octahedrally tilted phase of otherwise non-ferroelectric perovskites such as CaTiO3, SrTiO3, and EuTiO3. As an example, we numerically demonstrate a large spontaneous polarization on the order of 1-5muC/cm2 at the SrTiO3 antidistortive phase boundaries at temperatures lower than the antiferrodistortive structural phase transition temperature of ~105 K

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preprint2011arXiv

New Symmetries in Crystals and Handed Structures

For over a century, the structure of materials has been described by a combination of rotations, rotation-inversions and translational symmetries. By recognizing the reversal of static structural rotations between clockwise and counterclockwise directions as a distinct symmetry operation, here we show that there are many more structural symmetries than are currently recognized in right- or left-handed handed helices, spirals, and in antidistorted structures composed equally of rotations of both handedness. For example, though a helix or spiral cannot possess conventional mirror or inversion symmetries, they can possess them in combination with the rotation reversal symmetry. Similarly, we show that many antidistorted perovskites possess twice the number of symmetry elements as conventionally identified. These new symmetries predict new forms for "roto" properties that relate to static rotations, such as rotoelectricity, piezorotation, and rotomagnetism. They also enable symmetry-based search for new phenomena, such as multiferroicity involving a coupling of spins, electric polarization and static rotations. This work is relevant to structure-property relationships in all material structures with static rotations such as minerals, polymers, proteins, and engineered structures.

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preprint2011arXiv

Static conductivity of charged domain wall in uniaxial ferroelectric-semiconductors

Using Landau-Ginzburg-Devonshire theory we calculated numerically the static conductivity of both inclined and counter domain walls in the uniaxial ferroelectrics-semiconductors of n-type. We used the effective mass approximation for the electron and holes density of states, which is valid at arbitrary distance from the domain wall. Due to the electrons accumulation, the static conductivity drastically increases at the inclined head-to-head wall by 1 order of magnitude for small incline angles theta pi/40 by up 3 orders of magnitude for the counter domain wall (theta=pi/2). Two separate regions of the space charge accumulation exist across an inclined tail-to-tail wall: the thin region in the immediate vicinity of the wall with accumulated mobile holes and the much wider region with ionized donors. The conductivity across the tail-to-tail wall is at least an order of magnitude smaller than the one of the head-to-head wall due to the low mobility of holes, which are improper carries. The results are in qualitative agreement with recent experimental data for LiNbO3 doped with MgO.

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preprint2009arXiv

Phase Diagrams and Domain Splitting in Thin Ferroelectric Films with Incommensurate Phases

We studied the phase diagram of thin ferroelectric films with incommensurate phases and semiconductor properties within the framework of Landau-Ginzburg-Devonshire theory. We performed both analytical calculations and phase-field modelling of the temperature and thickness dependencies of the period of incommensurate 180 degree domain structures appeared in thin films covered with perfect electrodes. It is found that the transition temperature from the paraelectric into the incommensurate phase as well as the period of incommensurate domain structure strongly depend on film thickness, and surface and gradient energy contributions. The results may provide insight on the temperature dependence of domain structures in nanosized ferroics with inherent incommensurate phases.

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preprint2008arXiv

Surface Effect on Domain Wall Width in Ferroelectrics

We study the effect of depolarization field related with inhomogeneous polarization distribution, strain and surface energy parameters on a domain wall profile near the surface of a ferroelectric film within the framework of Landau-Ginzburg-Devonshire phenomenology. Both inhomogeneous elastic stress and positive surface energy lead to the wall broadening at electrically screened surface. For ferroelectrics with weak piezoelectric coupling, the extrapolation length that defines surface energy parameter, affects the wall broadening more strongly than inhomogeneous elastic stress. Unexpectedly, the domain wall profile follows a long-range power law when approaching the surface, while it saturates exponentially in the bulk. In materials with high piezoelectric coupling and negligibly small surface energy (i.e. high extrapolation length) inhomogeneous elastic stress effect dominates.

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preprint2008arXiv

Three-Dimensional Grain Boundary Spectroscopy in Transparent High Power Ceramic Laser Materials

Using confocal Raman and fluorescence spectroscopic imaging in 3-dimensions, we show direct evidence for Nd3+-Nd3+ interactions across grain boundaries (GBs) in Nd3+:YAG laser ceramics. It is clearly shown that Nd3+ segregation takes place at GBs leading to self-fluorescence quenching which affects a volume fraction as high as 20%. In addition, we show a clear trend of increasing spatial inhomogeneities in Nd3+ concentration when the doping levels exceeds 3 at%, which is not detected by standard spectrometry techniques. These results could point the way to further improvements in what is already an impressive class of ceramic laser materials.

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