Abstract

Infrared laser systems are vital for applications in spectroscopy, communications, and biomedical devices, where infrared nonlinear optical (NLO) crystals are required for broadband frequency down-conversion. Such crystals need to have high non-resonant NLO coefficients, a large bandgap, low absorption coefficient, phase-matchability among other competing demands, e.g., a larger bandgap leads to smaller NLO coefficients. Here, we report the successful growth of single crystals of γγ-NaAsSe2_2 that exhibit a giant second harmonic generation (SHG) susceptibility of d11_{11}=590 pm V−1^{-1} at 2μμm wavelength; this is ~ eighteen times larger than that of commercial AgGaSe2_2 while retaining a similar bandgap of ~1.87eV, making it an outstanding candidate for quasi-phase-matched devices utilizing d11_{11}. In addition, γγ-NaAsSe2_2 is both Type I and Type II phase-matchable, and has a transparency range up to 16μμm wavelength. Thus γγ-NaAsSe2 is a promising bulk NLO crystal for infrared laser applications.

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