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Anna N. Morozovska

Anna N. Morozovska contributes to research discovery and scholarly infrastructure.

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Published work

23 published item(s)

preprint2025arXiv

Coexistence of Ferroelectric and Relaxor-like Phases in a Multiferroic Solid Solution (1-x)Pb(Fe$_{1/2}$Nb$_{1/2}$)O$_3$-xPbMnO$_3$

Experimental and theoretical studies of unusual polar, dielectric and magnetic properties of room temperature multiferroics, such as perovskites Pb(Fe$_{1/2}$Nb$_{1/2}$)O$_3$ (PFN) and Pb(Fe$_{1/2}$Ta$_{1/2}$)O$_3$ (PFT), are very important. We study the phase composition, dielectric, ferroic properties of the solid solutions PFN and PFT substituted with 5, 10, 15, 20 and 30 % of Mn ions prepared by the solid-state synthesis. The XRD analysis confirmed the perovskite structure of sintered ceramics. Electric measurements revealed the ferroelectric-type hysteresis of electric charge in pure PFN ceramics and in PFN ceramics substituted with (10 - 30)% of Mn. At the same time, the PFN-5% Mn ceramics did not show any ferroelectric properties due to very high conductivity.Temperature dependences of the dielectric permittivity of PFN-10% Mn and PFN-15% Mn ceramics have two pronounced maxima, one of which is relatively sharp and has a weak frequency dispersion; another is diffuse and has a strong frequency dispersion. A further increase in the Mn content up to 20% leads to the right shift in the paraelectric-ferroelectric phase transition temperature, as well as to the strong suppression of the second wide maximum, which transforms into a small diffuse shoulder. An increase in the Mn substitution up to 30% leads to a significant decrease in the dielectric permittivity, left shift of its maximum, and induces a pronounced frequency dispersion of the paraelectric-ferroelectric transition temperature, which is inherent to relaxor-like ferroelectrics.Comparison of the model with experiments reveal the coexistence of the ordered ferroelectric-like and disordered relaxor-like phases in the multiferroic solid solutions PFN-Mn and PFT-Mn.

preprint2023arXiv

Phase transitions in ferroelectric domain walls

Despite multiple efforts, there exist many unsolved fundamental problems related with detection and analysis of internal polarization structure and related phase transitions in ferroelectric domain walls. Their solution can be very important for the progress in domain wall nanoelectronics and related applications in advanced memories and other information technologies. Here, we theoretically study the features of phase transitions in the domain walls, which are potentially detectable by the scanning probe capacitance microwave microscopy. The finite element modelling based on the Landau-Ginzburg-Devonshire theory is performed for the capacitance changes related with the domain wall motion in a multiaxial ferroelectric BaTiO$_3$.

preprint2022arXiv

Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layers of dielectric SiO2 and weak ferroelectric HfO2. It appeared possible to achieve a quasi-steady-state negative capacitance of the HfO2 layer, C_(HfO_2 )<0, if the layer thickness is close to the critical thickness of the size-induced ferroelectric-paraelectric phase transition. The quasi-steady-state negative capacitance, being a very slow-varying transient state of the ferroelectric, corresponds to a positive capacitance of the whole system, and so its appearance does not break any thermodynamic principle. Implementation of the quasi-steady-state negative capacitance C_ins of the gate insulator can open the principal possibility to reduce the MOSFET subthreshold swing below the critical value, and to decrease the gate voltage below the fundamental Boltzmann limit. However, we failed to found the parameters for which C_ins is negative in the quasi-steady states; and thus, the negative C_(HfO_2 ) cannot reduce the subthreshold swing below the fundamental limit. Nevertheless, the increase in C_ins, related with C_(HfO_2 )<0, can decrease the swing above the limit, reduce device heating during the operation cycles, and thus contribute to further improvements of the MOSFET performances.

preprint2022arXiv

Dynamic control of ferroionic states in ferroelectric nanoparticles

The polar states of uniaxial ferroelectric nanoparticles interacting with a surface system of electronic and ionic charges with a broad distribution of mobilities is explored, which corresponds to the experimental case of nanoparticles in solution or ambient conditions. The nonlinear interactions between the ferroelectric dipoles and surface charges with slow relaxation dynamics in an external field lead to the emergence of a broad range of paraelectric-like, antiferroelectric-like ionic, and ferroelectric-like ferroionic states. The crossover between these states can be controlled not only by the static characteristics of the surface charges, but also by their relaxation dynamics in the applied field. Obtained results are not only promising for advanced applications of ferroelectric nanoparticles in nanoelectronics and optoelectronics, they also offer strategies for experimental verification.

preprint2022arXiv

Electric field control of labyrinth domain structures in core-shell ferroelectric nanoparticles

In the framework of the Landau-Ginzburg-Devonshire (LGD) approach, we studied the possibility of controlling the polarity and chirality of equilibrium domain structures by a homogeneous external electric field in a nanosized ferroelectric core covered with an ultra-thin shell of screening charge. Under certain screening lengths and core sizes, the minimum of the LGD energy, which consists of Landau-Devonshire energy, Ginzburg polarization gradient energy, and electrostatic terms, leads to the spontaneous appearance of stable labyrinth domain structures in the core. The labyrinths evolve from an initial polarization distribution consisting of arbitrarily small randomly oriented nanodomains. The equilibrium labyrinth structure is weakly influenced by details of the initial polarization distribution, such that one can obtain a quasi-continuum of nearly degenerate labyrinth structures, whose number is limited only by the mesh discretization density. Applying a homogeneous electric field to a nanoparticle with labyrinth domains, and subsequently removing it, allows inducing changes to the labyrinth structure, as the maze polarity is controlled by a field projection on the particle polar axis. Under specific conditions of the screening charge relaxation, the quasi-static dielectric susceptibility of the labyrinth structure can be negative, potentially leading to a negative capacitance effect. Considering the general validity of the LGD approach, we expect that an electric field control of labyrinth domains is possible in many spatially-confined nanosized ferroics, which can be potentially interesting for advanced cryptography and modern nanoelectronics.

preprint2022arXiv

Ferroelectricity in Hafnia Controlled via Surface Electrochemical State

Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviors such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions suggests that ferroelectricity in these materials is strongly coupled with additional mechanisms, with possible candidates including the ionic subsystem or strain. Here we argue that the properties of these materials emerge due to the interplay between the bulk competition between ferroelectric and structural instabilities, similar to that in classical antiferroelectrics, coupled with non-local screening mediated by the finite density of states at surfaces and internal interfaces. Via decoupling of electrochemical and electrostatic controls realized via environmental and ultra-high vacuum PFM, we show that these materials demonstrate a rich spectrum of ferroic behaviors including partial pressure- and temperature-induced transitions between FE and AFE behaviors. These behaviors are consistent with an antiferroionic model and suggest novel strategies for hafnia-based device optimization.

preprint2022arXiv

Hypothesis Learning in Automated Experiment: Application to Combinatorial Materials Libraries

Machine learning is rapidly becoming an integral part of experimental physical discovery via automated and high-throughput synthesis, and active experiments in scattering and electron/probe microscopy. This, in turn, necessitates the development of active learning methods capable of exploring relevant parameter spaces with the smallest number of steps. Here we introduce an active learning approach based on co-navigation of the hypothesis and experimental spaces. This is realized by combining the structured Gaussian Processes containing probabilistic models of the possible system&#39;s behaviors (hypotheses) with reinforcement learning policy refinement (discovery). This approach closely resembles classical human-driven physical discovery, when several alternative hypotheses realized via models with adjustable parameters are tested during an experiment. We demonstrate this approach for exploring concentration-induced phase transitions in combinatorial libraries of Sm-doped BiFeO3 using Piezoresponse Force Microscopy, but it is straightforward to extend it to higher-dimensional parameter spaces and more complex physical problems once the experimental workflow and hypothesis-generation are available.

preprint2022arXiv

Observability of negative capacitance of a ferroelectric film: Theoretical predictions

We theoretically explore mechanisms that can potentially give rise to the steady-state and transient negative capacitance in a uniaxial ferroelectric film stabilized by a dielectric layer. The analytical expressions for the steady-state capacitance of a single-domain and poly-domain states are derived within Landau-Ginzburg-Devonshire approach and used to study the state stability vs. the domain splitting as a function of dielectric layer thickness. Analytical expressions for the critical thickness of the dielectric layer, polarization amplitude, equilibrium domain period and susceptibility are obtained and corroborated by finite element modelling. We further explore the possible effects of nonlinear screening by two types of screening charges at the ferroelectric-dielectric interface and show that if at least one of the screening charges is very slow, the total polarization dynamics can exhibit complex time- and voltage dependent behaviors that can be interpreted as an observable negative capacitance. In this setting, the transient negative capacitance effect is accompanied by almost zero dielectric susceptibility in a wide voltage range and low frequencies. These results may help to elucidate the observation of the transient negative capacitance in thin ferroelectric films, and identify materials systems that can give rise to the behavior.

preprint2022arXiv

Probing temperature-induced phase transitions at individual ferroelectric domain walls

Ferroelectric domain walls have emerged as one of the most fascinating objects in condensed matter physics due to the broad variability of functional behaviors they exhibit. However, the vast majority of domain walls studies have been focused on bias-induced dynamics and transport behaviors. Here, we introduce the scanning probe microscopy approach based on piezoresponse force microscopy (PFM) with a dynamically heated probe, combining local heating and local biasing of the material. This approach is used to explore the thermal polarization dynamics in soft Sn2P2S6 ferroelectrics, and allows for the exploration of phase transitions at individual domain walls. The strong and weak modulation regimes for the thermal PFM are introduced. The future potential applications of heated probe approach for functional SPM measurements including piezoelectric, elastic, microwave, and transport measurements are discussed.

preprint2022arXiv

Size Effect of Local Current-Voltage Characteristics of MX$_2$ Nanoflakes: Local Density of States Reconstruction from Scanning Tunneling Microscopy Experiments

Local current-voltage characteristics for low-dimensional transition metal dichalcogenides (LD-TMD), as well as the reconstruction of their local density of states (LDOS) from scanning tunneling microscopy (STM) experiments is of fundamental interest and can be useful for advanced applications. Most of existing models are either hardly applicable for the LD-TMD of complex shape (e.g., those based on Simmons approach), or necessary for solving an ill-defined integral equation to deconvolute the unknown LDOS (e.g., those based on Tersoff approach). Using a serial expansion of Tersoff formulae, we propose a flexible method how to reconstruct the LDOS from local current-voltage characteristics measured in STM experiments. We established a set of key physical parameters, which characterize the tunneling current of a STM probe - sample contact and the sample LDOS expanded in Gaussian functions. Using a direct variational method coupled with a probabilistic analysis, we determine these parameters from the STM experiments for MoS2 nanoflakes with different number of layers. The main result is the reconstruction of the LDOS in a relatively wide energy range around a Fermi level, which allows insight in the local band structure of LD-TMDs. The reconstructed LDOS reveals pronounced size effects for the single-layer, bi-layer and three-layer MoS$_2$ nanoflakes, which we relate with low dimensionality and strong bending/corrugation of the nanoflakes. We hope that the proposed elaboration of the Tersoff approach allowing LDOS reconstruction will be of urgent interest for quantitative description of STM experiments, as well as useful for the microscopic physical understanding of the surface, strain and bending contribution to LD-TMDs electronic properties.

preprint2022arXiv

Temperature-assisted Piezoresponse Force Microscopy: Probing Local Temperature-Induced Phase Transitions in Ferroics

Combination of local heating and biasing at the tip-surface junction in temperature-assisted piezoresponse force microscopy (tPFM) opens the pathway for probing local temperature induced phase transitions in ferroics, exploring the temperature dependence of polarization dynamics in ferroelectrics, and potentially discovering coupled phenomena driven by strong temperature- and electric field gradients. Here, we analyze the signal formation mechanism in tPFM and explore the interplay between thermal- and bias-induced switching in model ferroelectric materials. We further explore the contributions of the flexoelectric and thermopolarization effects to the local electromechanical response, and demonstrate that the latter can be significant for &#34;soft&#34; ferroelectrics. These results establish the framework for quantitative interpretation of tPFM observations, predict the emergence the non-trivial switching and relaxation phenomena driven by non-local thermal gradient-induced polarization switching, and open a pathway for exploring the physics of thermopolarization effects in various non-centrosymmetric and centrosymmetric materials.

preprint2021arXiv

A Combined Theoretical and Experimental Study of the Phase Coexistence and Morphotropic Boundaries in Ferroelectric-Antiferroelectric-Antiferrodistortive Multiferroics

The physical nature of the ferroelectric (FE), ferrielectric (FEI) and antiferroelectric (AFE) phases, their coexistence and spatial distributions underpin the functionality of antiferrodistortive (AFD) multiferroics in the vicinity of morphotropic phase transitions. Using Landau-Ginzburg-Devonshire (LGD) phenomenology and a semi-microscopic four sublattice model (FSM), we explore the behavior of different AFE, FEI and FE long-range orderings and their coexistence at the morphotropic phase boundaries in FE-AFE-AFD multiferroics. These theoretical predictions are compared with the experimental observations for dense Bi1-yRyFeO3 ceramics, where R is Sm or La atoms with the fraction 0 < y< 0.25, as confirmed by the X-ray diffraction (XRD) and Piezoresponse Force Microscopy (PFM). These complementary measurements were used to study the macroscopic and nanoscopic transformation of the crystal structure with the doping. The comparison of the measured and calculated AFE/FE phase fractions demonstrate that the LGD-FSM approach well describes the experimental results obtained by XRD and PFM for Bi1-yRyFeO3. Hence, this combined theoretical and experimental approach provides further insight into the origin of the morphotropic boundaries and coexisting FE and AFE states in model rare-earth doped multiferroics.

preprint2021arXiv

Chemical control of polarization in thin strained films of a multiaxial ferroelectric: phase diagrams and polarization rotation

The emergent behaviors in thin films of a multiaxial ferroelectric due to an electrochemical coupling between the rotating polarization and surface ions are explored within the framework of the 2-4 Landau-Ginzburg-Devonshire (LGD) thermodynamic potential combined with the Stephenson-Highland (SH) approach. The combined LGD-SH approach allows to describe the electrochemical switching and rotation of polarization vector in the multiaxial ferroelectric film covered by surface ions with a charge density dependent to the relative partial oxygen pressure. We calculate the phase diagrams and analyze the dependence of polarization components on the applied voltage, and discuss the peculiarities of quasi-static ferroelectric, dielectric and piezoelectric hysteresis loops in thin strained multiaxial ferroelectric films. The nonlinear surface screening by oxygen ions makes the diagrams very different from the known diagrams of e.g., strained BaTiO3 films. Quite unexpectedly we predict the appearance of the ferroelectric reentrant phases. Obtained results point on the possibility to control the appearance and features of ferroelectric, dielectric and piezoelectric hysteresis in multiaxial FE films covered by surface ions by varying their concentration via the partial oxygen pressure. The LGD-SH description of a multiaxial FE film can be further implemented within the Bayesian optimization framework, opening the pathway towards predictive materials optimization.

preprint2021arXiv

Exploring physics of ferroelectric domain walls via Bayesian analysis of atomically resolved STEM data

The physics of ferroelectric domain walls is explored using the Bayesian inference analysis of atomically resolved STEM data. We demonstrate that domain wall profile shapes are ultimately sensitive to the nature of the order parameter in the material, including the functional form of Ginzburg-Landau-Devonshire expansion, and numerical value of the corresponding parameters. The preexisting materials knowledge naturally folds in the Bayesian framework in the form of prior distributions, with the different order parameters forming competing (or hierarchical) models. Here, we explore the physics of the ferroelectric domain walls in BiFeO3 using this method, and derive the posterior estimates of relevant parameters. More generally, this inference approach both allows learning materials physics from experimental data with associated uncertainty quantification, and establishing guidelines for instrumental development answering questions on what resolution and information limits are necessary for reliable observation of specific physical mechanisms of interest.

preprint2021arXiv

Mapping causal patterns in crystalline solids

The evolution of the atomic structures of the combinatorial library of Sm-substituted thin film BiFeO3 along the phase transition boundary from the ferroelectric rhombohedral phase to the non-ferroelectric orthorhombic phase is explored using scanning transmission electron microscopy (STEM). Localized properties including polarization, lattice parameter, and chemical composition are parameterized from atomic-scale imaging and their causal relationships are reconstructed using a linear non-Gaussian acyclic model (LiNGAM). This approach is further extended toward exploring the spatial variability of the causal coupling using the sliding window transform method, which revealed that new causal relationships emerged both at the expected locations, such as domain walls and interfaces, but also at additional regions forming clusters in the vicinity of the walls or spatially distributed features. While the exact physical origins of these relationships are unclear, they likely represent nanophase separated regions in the morphotropic phase boundaries. Overall, we pose that an in-depth understanding of complex disordered materials away from thermodynamic equilibrium necessitates understanding not only of the generative processes that can lead to observed microscopic states, but also the causal links between multiple interacting subsystems.

preprint2020arXiv

Causal analysis of competing atomistic mechanisms in ferroelectric materials from high-resolution Scanning Transmission Electron Microscopy data

Machine learning has emerged as a powerful tool for the analysis of mesoscopic and atomically resolved images and spectroscopy in electron and scanning probe microscopy, with the applications ranging from feature extraction to information compression and elucidation of relevant order parameters to inversion of imaging data to reconstruct structural models. However, the fundamental limitation of machine learning methods is their correlative nature, leading to extreme susceptibility to confounding factors. Here, we implement the workflow for causal analysis of structural scanning transmission electron microscopy (STEM) data and explore the interplay between physical and chemical effects in ferroelectric perovskite across the ferroelectric-antiferroelectric phase transitions. The combinatorial library of the Sm-doped BiFeO3 is grown to cover the composition range from pure ferroelectric BFO to orthorhombic 20% Sm-doped BFO. Atomically resolved STEM images are acquired for selected compositions and are used to create a set of local compositional, structural, and polarization field descriptors. The information-geometric causal inference (IGCI) and additive noise model (ANM) analysis are used to establish the pairwise causal directions between the descriptors, ordering the data set in the causal direction. The causal chain for IGCI and ANM across the composition is compared and suggests the presence of common causal mechanisms across the composition series. Ultimately, we believe that the causal analysis of the multimodal data will allow exploring the causal links between multiple competing mechanisms that control the emergence of unique functionalities of morphotropic materials and ferroelectric relaxors.

preprint2020arXiv

Dynamic manipulation in piezoresponse force microscopy: creating non-equilibrium phases with large electromechanical response

Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of mesoscale phenomena ranging from giant electromechanical responses to memory effects. Exploring the functionalities of individual domain walls, their interactions, and controlled modifications of the domain structures is crucial for applications and fundamental physical studies. However, the dynamic nature of these features severely limits studies of their local physics since application of local biases or pressures in piezoresponse force microscopy induce wall displacement as a primary response. Here, we introduce a fundamentally new approach for the control and modification of domain structures based on automated experimentation whereby real space image-based feedback is used to control the tip bias during ferroelectric switching, allowing for modification routes conditioned on domain states under the tip. This automated experiment approach is demonstrated for the exploration of domain wall dynamics and creation of metastable phases with large electromechanical response.

preprint2020arXiv

Flexo-induced ferroelectricity in low dimensional transition metal dichalcogenides

We developed a Landau type theory for the description of polar phenomena in low-dimensional transition metal dichalcogenides (TMDs), specifically exploring flexoelectric origin of the polarization induced by a spontaneous bending and by inversion symmetry breaking due to the interactions with substrate. We consider the appearance of the spontaneous out-of-plane polarization due to the flexoelectric coupling with the strain gradient of the spontaneous surface rippling and surface-induced piezoelectricity. Performed calculations proved that the out-of-plane spontaneous polarization, originated from flexoelectric effect in a rippled TMD, is bistable and reversible by a non-uniform electric field. In contrast, the spontaneous polarization induced by a misfit strain and symmetry-sensitive surface-induced piezoelectric coupling, cannot be reversed by an external electric field. The special attention is paid to the spectral analysis of the linear dielectric susceptibility and gain factor, which enhancement is critically important for the observation of the polar phenomena in low-dimensional TMDs by the surface-enhanced vibrational spectroscopy.

preprint2020arXiv

Strain engineering of ferromagnetic-graphene-ferroelectric nanostructures

We calculated a spin-polarized conductance in the almost unexplored nanostructure &#34;high temperature ferromagnetic insulator/ graphene/ ferroelectric film&#34; with a special attention to the impact of electric polarization rotation in a strained multiaxial ferroelectric film. The rotation and value of polarization vector are controlled by a misfit strain. We proposed a phenomenological model, which takes into account the shift of the Dirac point due to the proximity of ferromagnetic insulator and uses the Landauer formula for the conductivity of the graphene channel. We derived analytical expressions, which show that the strain-dependent ferroelectric polarization governs the concentration of two-dimensional charge carriers and Fermi level in graphene in a self-consistent way. We demonstrate the realistic opportunity to control the spin-polarized conductance of graphene by a misfit strain (&#34;strain engineering&#34;) at room and higher temperatures in the nanostructures CoFeO4/graphene/PZT and Y3Fe5O12/graphene/PZT. Obtained results open the possibilities for the applications of ferromagnetic/graphene/ferroelectric nanostructures as non-volatile spin filters and spin valves.

preprint2020arXiv

The influence of the distribution function of ferroelectric nanoparticles sizes on their electrocaloric and pyroelectric properties

We consider a model of a nanocomposite based on non-interacting spherical single-domain ferroelectric nanoparticles of various sizes embedded in a dielectric matrix. The size distribution function of these nanoparticles is selected as a part of the Gaussian distribution from minimum to maximum radius (truncated normal distribution). For such nanocomposites, we calculate the dependences of the reversible part of the electric polarization, the electrocaloric temperature change, and the dielectric permittivity on the external electric field, which have the characteristic form of hysteresis loops. We then analyze the change in the shape of the hysteresis loops relative to the particle size distribution parameters. We demonstrate that for the same mean-square dispersion, the remanent polarization, coercive field, dielectric permittivity maximums, maximums and minimums of the electrocaloric temperature change depend most strongly on the most probable radius, moderately depend on the dispersion, and have the weakest dependency on the nanoparticle maximum radius. We calculated and analyzed the dependences of pyroelectric figures of merit on the average radius of the nanoparticles in the composite. The dependences confirm the presence of a phase transition induced by the size of the nanoparticles, which is characterized by the presence of a maxima near the critical average radius of the particles, the value of which increases with increasing dispersion of the distribution function.

preprint2019arXiv

Gate Voltage Control of Transition Metal Dichalcogenide Monolayers Quantum Yield

Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it has been shown experimentally that quantum yield in MoS2 and WSe2 monoatomic layers can reach values close to unity when electrostatic doping makes them intrinsic semiconductors. However, the available theoretical description does not give an understanding of the physical mechanisms underlying in the gate voltage control of quantum yield.This work is an attempt to propose a consistent semi-phenomenological theory of photo-induced charge carriers relaxation in 2D-TMDs, which allows obtaining an analytical dependence of the quantum yield on the voltage applied to the FET gate. We consider a standard experimental situation, when the 2D-TMD monolayer and the metal gate are plates of a flat capacitor, and the capacitor charge is proportional to the gate voltage. The dependences of the TMD monolayers quantum yield on the gate voltage and the carrier generation rate have been calculated for the cases of the prevailing recombination of free electrons and holes (radiative and non-radiative Auger recombination) and recombination of excitons (radiative and Auger recombination). In both cases analytical expressions were derived for the dependence of quantum yield on the gate voltage and photo-induced carriers generation rate at a fixed gate voltage. Quantitative agreement with experiment allows concluding about the relevance of the proposed theoretical model for the description of carriers photo-generation and recombination in 2D-TMD monolayers. Obtained results demonstrate the possibilities of 2D-TMD quantum yield control by the gate voltage and indicate that 2D-TMDs are promising candidates for modern optoelectronics devices.

preprint2019arXiv

Melting of Spatially Modulated Phases in La-doped BiFeO3 at Surfaces and Surface-Domain Wall Junctions

The interplay between the surface and domain wall phenomena in multiferroic LaxBi1-xFeO3 in the vicinity of morphotropic phase transition is explored on the atomic level. Scanning Transmission Electron Microscopy (STEM) has enabled mapping of atomic structures of the material with picometer-level precision, providing direct insight into the spatial distribution of the order parameters in this material and their behavior at surfaces and interfaces. Here, we use the thermodynamic Landau-Ginzburg-Devonshire (LGD) approach to explain the emergence of spatially modulated phases (SMP) in La0.22Bi0.78FeO3 films, and establish that the change of polarization gradient coefficients caused by La-doping is the primary driving mechanisms. The suppression, or &#34;melting&#34;, of the SMP in the vicinity of the domain wall surface junction is observed experimentally and simulated in the framework of LGD theory. The melting originated from the system tendency to minimize electrostatic energy caused by long-range stray electric fields outside the film and related depolarization effects inside it. The observed behavior provides insight to the origin of surface and interface behaviors in multiferroics.

preprint2019arXiv

Phase Diagrams of Single Layer Two-Dimensional Transition Metal Dichalcogenides: Landau Theory

Single layer (SL) two-dimensional transition metal dichalcogenides (TMDs), such as MoS2, ReS2, WSe2, and MoTe2 have now become the focus of intensive fundamental and applied researches due to their intriguing and tunable physical properties. These materials exhibit a broad range of structural phases that can be induced via elastic strain, chemical doping, and electrostatic field effect. These transitions in turn can open and close the band gap of SL-TMDs, leading to metal-insulator transitions, and lead to emergence of more complex quantum phenomena. These considerations necessitate detailed understanding of the mesoscopic mechanisms of these structural phase transitions. Here we develop the Landau-type thermodynamic description of SL-TMDs on example of SL-(MoS2)1-x-(ReS2)x system and analyze the free energy surfaces, phase diagrams, and order parameter behavior. Our results predict the existence of multiple structural phases with 2-, 6- and 12-fold degenerated energy minima for in-plane and out of plane order parameters. This analysis suggests that out-of-plane ferroelectricity can exist in many of these phases, with the switchable polarization being proportional to the out-of-plane order parameter. We further predict that the domain walls in SL-(MoS2)1-x-(ReS2)x should become conductive above a certain strain threshold.