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Anna N. Morozovska

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cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph physics.data-an physics.ins-det

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preprint2025arXiv

Coexistence of Ferroelectric and Relaxor-like Phases in a Multiferroic Solid Solution (1-x)Pb(Fe$_{1/2}$Nb$_{1/2}$)O$_3$-xPbMnO$_3$

Experimental and theoretical studies of unusual polar, dielectric and magnetic properties of room temperature multiferroics, such as perovskites Pb(Fe$_{1/2}$Nb$_{1/2}$)O$_3$ (PFN) and Pb(Fe$_{1/2}$Ta$_{1/2}$)O$_3$ (PFT), are very important. We study the phase composition, dielectric, ferroic properties of the solid solutions PFN and PFT substituted with 5, 10, 15, 20 and 30 % of Mn ions prepared by the solid-state synthesis. The XRD analysis confirmed the perovskite structure of sintered ceramics. Electric measurements revealed the ferroelectric-type hysteresis of electric charge in pure PFN ceramics and in PFN ceramics substituted with (10 - 30)% of Mn. At the same time, the PFN-5% Mn ceramics did not show any ferroelectric properties due to very high conductivity.Temperature dependences of the dielectric permittivity of PFN-10% Mn and PFN-15% Mn ceramics have two pronounced maxima, one of which is relatively sharp and has a weak frequency dispersion; another is diffuse and has a strong frequency dispersion. A further increase in the Mn content up to 20% leads to the right shift in the paraelectric-ferroelectric phase transition temperature, as well as to the strong suppression of the second wide maximum, which transforms into a small diffuse shoulder. An increase in the Mn substitution up to 30% leads to a significant decrease in the dielectric permittivity, left shift of its maximum, and induces a pronounced frequency dispersion of the paraelectric-ferroelectric transition temperature, which is inherent to relaxor-like ferroelectrics.Comparison of the model with experiments reveal the coexistence of the ordered ferroelectric-like and disordered relaxor-like phases in the multiferroic solid solutions PFN-Mn and PFT-Mn.

preprint2023arXiv

Phase transitions in ferroelectric domain walls

Despite multiple efforts, there exist many unsolved fundamental problems related with detection and analysis of internal polarization structure and related phase transitions in ferroelectric domain walls. Their solution can be very important for the progress in domain wall nanoelectronics and related applications in advanced memories and other information technologies. Here, we theoretically study the features of phase transitions in the domain walls, which are potentially detectable by the scanning probe capacitance microwave microscopy. The finite element modelling based on the Landau-Ginzburg-Devonshire theory is performed for the capacitance changes related with the domain wall motion in a multiaxial ferroelectric BaTiO$_3$.

preprint2022arXiv

Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layers of dielectric SiO2 and weak ferroelectric HfO2. It appeared possible to achieve a quasi-steady-state negative capacitance of the HfO2 layer, C_(HfO_2 )<0, if the layer thickness is close to the critical thickness of the size-induced ferroelectric-paraelectric phase transition. The quasi-steady-state negative capacitance, being a very slow-varying transient state of the ferroelectric, corresponds to a positive capacitance of the whole system, and so its appearance does not break any thermodynamic principle. Implementation of the quasi-steady-state negative capacitance C_ins of the gate insulator can open the principal possibility to reduce the MOSFET subthreshold swing below the critical value, and to decrease the gate voltage below the fundamental Boltzmann limit. However, we failed to found the parameters for which C_ins is negative in the quasi-steady states; and thus, the negative C_(HfO_2 ) cannot reduce the subthreshold swing below the fundamental limit. Nevertheless, the increase in C_ins, related with C_(HfO_2 )<0, can decrease the swing above the limit, reduce device heating during the operation cycles, and thus contribute to further improvements of the MOSFET performances.

preprint2022arXiv

Dynamic control of ferroionic states in ferroelectric nanoparticles

The polar states of uniaxial ferroelectric nanoparticles interacting with a surface system of electronic and ionic charges with a broad distribution of mobilities is explored, which corresponds to the experimental case of nanoparticles in solution or ambient conditions. The nonlinear interactions between the ferroelectric dipoles and surface charges with slow relaxation dynamics in an external field lead to the emergence of a broad range of paraelectric-like, antiferroelectric-like ionic, and ferroelectric-like ferroionic states. The crossover between these states can be controlled not only by the static characteristics of the surface charges, but also by their relaxation dynamics in the applied field. Obtained results are not only promising for advanced applications of ferroelectric nanoparticles in nanoelectronics and optoelectronics, they also offer strategies for experimental verification.

preprint2022arXiv

Electric field control of labyrinth domain structures in core-shell ferroelectric nanoparticles

In the framework of the Landau-Ginzburg-Devonshire (LGD) approach, we studied the possibility of controlling the polarity and chirality of equilibrium domain structures by a homogeneous external electric field in a nanosized ferroelectric core covered with an ultra-thin shell of screening charge. Under certain screening lengths and core sizes, the minimum of the LGD energy, which consists of Landau-Devonshire energy, Ginzburg polarization gradient energy, and electrostatic terms, leads to the spontaneous appearance of stable labyrinth domain structures in the core. The labyrinths evolve from an initial polarization distribution consisting of arbitrarily small randomly oriented nanodomains. The equilibrium labyrinth structure is weakly influenced by details of the initial polarization distribution, such that one can obtain a quasi-continuum of nearly degenerate labyrinth structures, whose number is limited only by the mesh discretization density. Applying a homogeneous electric field to a nanoparticle with labyrinth domains, and subsequently removing it, allows inducing changes to the labyrinth structure, as the maze polarity is controlled by a field projection on the particle polar axis. Under specific conditions of the screening charge relaxation, the quasi-static dielectric susceptibility of the labyrinth structure can be negative, potentially leading to a negative capacitance effect. Considering the general validity of the LGD approach, we expect that an electric field control of labyrinth domains is possible in many spatially-confined nanosized ferroics, which can be potentially interesting for advanced cryptography and modern nanoelectronics.

preprint2022arXiv

Ferroelectricity in Hafnia Controlled via Surface Electrochemical State

Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviors such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions suggests that ferroelectricity in these materials is strongly coupled with additional mechanisms, with possible candidates including the ionic subsystem or strain. Here we argue that the properties of these materials emerge due to the interplay between the bulk competition between ferroelectric and structural instabilities, similar to that in classical antiferroelectrics, coupled with non-local screening mediated by the finite density of states at surfaces and internal interfaces. Via decoupling of electrochemical and electrostatic controls realized via environmental and ultra-high vacuum PFM, we show that these materials demonstrate a rich spectrum of ferroic behaviors including partial pressure- and temperature-induced transitions between FE and AFE behaviors. These behaviors are consistent with an antiferroionic model and suggest novel strategies for hafnia-based device optimization.

preprint2022arXiv

Hypothesis Learning in Automated Experiment: Application to Combinatorial Materials Libraries

Machine learning is rapidly becoming an integral part of experimental physical discovery via automated and high-throughput synthesis, and active experiments in scattering and electron/probe microscopy. This, in turn, necessitates the development of active learning methods capable of exploring relevant parameter spaces with the smallest number of steps. Here we introduce an active learning approach based on co-navigation of the hypothesis and experimental spaces. This is realized by combining the structured Gaussian Processes containing probabilistic models of the possible system's behaviors (hypotheses) with reinforcement learning policy refinement (discovery). This approach closely resembles classical human-driven physical discovery, when several alternative hypotheses realized via models with adjustable parameters are tested during an experiment. We demonstrate this approach for exploring concentration-induced phase transitions in combinatorial libraries of Sm-doped BiFeO3 using Piezoresponse Force Microscopy, but it is straightforward to extend it to higher-dimensional parameter spaces and more complex physical problems once the experimental workflow and hypothesis-generation are available.

preprint2022arXiv

Observability of negative capacitance of a ferroelectric film: Theoretical predictions

We theoretically explore mechanisms that can potentially give rise to the steady-state and transient negative capacitance in a uniaxial ferroelectric film stabilized by a dielectric layer. The analytical expressions for the steady-state capacitance of a single-domain and poly-domain states are derived within Landau-Ginzburg-Devonshire approach and used to study the state stability vs. the domain splitting as a function of dielectric layer thickness. Analytical expressions for the critical thickness of the dielectric layer, polarization amplitude, equilibrium domain period and susceptibility are obtained and corroborated by finite element modelling. We further explore the possible effects of nonlinear screening by two types of screening charges at the ferroelectric-dielectric interface and show that if at least one of the screening charges is very slow, the total polarization dynamics can exhibit complex time- and voltage dependent behaviors that can be interpreted as an observable negative capacitance. In this setting, the transient negative capacitance effect is accompanied by almost zero dielectric susceptibility in a wide voltage range and low frequencies. These results may help to elucidate the observation of the transient negative capacitance in thin ferroelectric films, and identify materials systems that can give rise to the behavior.

preprint2022arXiv

Probing temperature-induced phase transitions at individual ferroelectric domain walls

Ferroelectric domain walls have emerged as one of the most fascinating objects in condensed matter physics due to the broad variability of functional behaviors they exhibit. However, the vast majority of domain walls studies have been focused on bias-induced dynamics and transport behaviors. Here, we introduce the scanning probe microscopy approach based on piezoresponse force microscopy (PFM) with a dynamically heated probe, combining local heating and local biasing of the material. This approach is used to explore the thermal polarization dynamics in soft Sn2P2S6 ferroelectrics, and allows for the exploration of phase transitions at individual domain walls. The strong and weak modulation regimes for the thermal PFM are introduced. The future potential applications of heated probe approach for functional SPM measurements including piezoelectric, elastic, microwave, and transport measurements are discussed.

preprint2022arXiv

Size Effect of Local Current-Voltage Characteristics of MX$_2$ Nanoflakes: Local Density of States Reconstruction from Scanning Tunneling Microscopy Experiments

Local current-voltage characteristics for low-dimensional transition metal dichalcogenides (LD-TMD), as well as the reconstruction of their local density of states (LDOS) from scanning tunneling microscopy (STM) experiments is of fundamental interest and can be useful for advanced applications. Most of existing models are either hardly applicable for the LD-TMD of complex shape (e.g., those based on Simmons approach), or necessary for solving an ill-defined integral equation to deconvolute the unknown LDOS (e.g., those based on Tersoff approach). Using a serial expansion of Tersoff formulae, we propose a flexible method how to reconstruct the LDOS from local current-voltage characteristics measured in STM experiments. We established a set of key physical parameters, which characterize the tunneling current of a STM probe - sample contact and the sample LDOS expanded in Gaussian functions. Using a direct variational method coupled with a probabilistic analysis, we determine these parameters from the STM experiments for MoS2 nanoflakes with different number of layers. The main result is the reconstruction of the LDOS in a relatively wide energy range around a Fermi level, which allows insight in the local band structure of LD-TMDs. The reconstructed LDOS reveals pronounced size effects for the single-layer, bi-layer and three-layer MoS$_2$ nanoflakes, which we relate with low dimensionality and strong bending/corrugation of the nanoflakes. We hope that the proposed elaboration of the Tersoff approach allowing LDOS reconstruction will be of urgent interest for quantitative description of STM experiments, as well as useful for the microscopic physical understanding of the surface, strain and bending contribution to LD-TMDs electronic properties.

preprint2022arXiv

Temperature-assisted Piezoresponse Force Microscopy: Probing Local Temperature-Induced Phase Transitions in Ferroics

Combination of local heating and biasing at the tip-surface junction in temperature-assisted piezoresponse force microscopy (tPFM) opens the pathway for probing local temperature induced phase transitions in ferroics, exploring the temperature dependence of polarization dynamics in ferroelectrics, and potentially discovering coupled phenomena driven by strong temperature- and electric field gradients. Here, we analyze the signal formation mechanism in tPFM and explore the interplay between thermal- and bias-induced switching in model ferroelectric materials. We further explore the contributions of the flexoelectric and thermopolarization effects to the local electromechanical response, and demonstrate that the latter can be significant for "soft" ferroelectrics. These results establish the framework for quantitative interpretation of tPFM observations, predict the emergence the non-trivial switching and relaxation phenomena driven by non-local thermal gradient-induced polarization switching, and open a pathway for exploring the physics of thermopolarization effects in various non-centrosymmetric and centrosymmetric materials.

preprint2021arXiv

A Combined Theoretical and Experimental Study of the Phase Coexistence and Morphotropic Boundaries in Ferroelectric-Antiferroelectric-Antiferrodistortive Multiferroics

The physical nature of the ferroelectric (FE), ferrielectric (FEI) and antiferroelectric (AFE) phases, their coexistence and spatial distributions underpin the functionality of antiferrodistortive (AFD) multiferroics in the vicinity of morphotropic phase transitions. Using Landau-Ginzburg-Devonshire (LGD) phenomenology and a semi-microscopic four sublattice model (FSM), we explore the behavior of different AFE, FEI and FE long-range orderings and their coexistence at the morphotropic phase boundaries in FE-AFE-AFD multiferroics. These theoretical predictions are compared with the experimental observations for dense Bi1-yRyFeO3 ceramics, where R is Sm or La atoms with the fraction 0 < y< 0.25, as confirmed by the X-ray diffraction (XRD) and Piezoresponse Force Microscopy (PFM). These complementary measurements were used to study the macroscopic and nanoscopic transformation of the crystal structure with the doping. The comparison of the measured and calculated AFE/FE phase fractions demonstrate that the LGD-FSM approach well describes the experimental results obtained by XRD and PFM for Bi1-yRyFeO3. Hence, this combined theoretical and experimental approach provides further insight into the origin of the morphotropic boundaries and coexisting FE and AFE states in model rare-earth doped multiferroics.

preprint2021arXiv

Chemical control of polarization in thin strained films of a multiaxial ferroelectric: phase diagrams and polarization rotation

The emergent behaviors in thin films of a multiaxial ferroelectric due to an electrochemical coupling between the rotating polarization and surface ions are explored within the framework of the 2-4 Landau-Ginzburg-Devonshire (LGD) thermodynamic potential combined with the Stephenson-Highland (SH) approach. The combined LGD-SH approach allows to describe the electrochemical switching and rotation of polarization vector in the multiaxial ferroelectric film covered by surface ions with a charge density dependent to the relative partial oxygen pressure. We calculate the phase diagrams and analyze the dependence of polarization components on the applied voltage, and discuss the peculiarities of quasi-static ferroelectric, dielectric and piezoelectric hysteresis loops in thin strained multiaxial ferroelectric films. The nonlinear surface screening by oxygen ions makes the diagrams very different from the known diagrams of e.g., strained BaTiO3 films. Quite unexpectedly we predict the appearance of the ferroelectric reentrant phases. Obtained results point on the possibility to control the appearance and features of ferroelectric, dielectric and piezoelectric hysteresis in multiaxial FE films covered by surface ions by varying their concentration via the partial oxygen pressure. The LGD-SH description of a multiaxial FE film can be further implemented within the Bayesian optimization framework, opening the pathway towards predictive materials optimization.

preprint2021arXiv

Exploring physics of ferroelectric domain walls via Bayesian analysis of atomically resolved STEM data

The physics of ferroelectric domain walls is explored using the Bayesian inference analysis of atomically resolved STEM data. We demonstrate that domain wall profile shapes are ultimately sensitive to the nature of the order parameter in the material, including the functional form of Ginzburg-Landau-Devonshire expansion, and numerical value of the corresponding parameters. The preexisting materials knowledge naturally folds in the Bayesian framework in the form of prior distributions, with the different order parameters forming competing (or hierarchical) models. Here, we explore the physics of the ferroelectric domain walls in BiFeO3 using this method, and derive the posterior estimates of relevant parameters. More generally, this inference approach both allows learning materials physics from experimental data with associated uncertainty quantification, and establishing guidelines for instrumental development answering questions on what resolution and information limits are necessary for reliable observation of specific physical mechanisms of interest.

preprint2021arXiv

Mapping causal patterns in crystalline solids

The evolution of the atomic structures of the combinatorial library of Sm-substituted thin film BiFeO3 along the phase transition boundary from the ferroelectric rhombohedral phase to the non-ferroelectric orthorhombic phase is explored using scanning transmission electron microscopy (STEM). Localized properties including polarization, lattice parameter, and chemical composition are parameterized from atomic-scale imaging and their causal relationships are reconstructed using a linear non-Gaussian acyclic model (LiNGAM). This approach is further extended toward exploring the spatial variability of the causal coupling using the sliding window transform method, which revealed that new causal relationships emerged both at the expected locations, such as domain walls and interfaces, but also at additional regions forming clusters in the vicinity of the walls or spatially distributed features. While the exact physical origins of these relationships are unclear, they likely represent nanophase separated regions in the morphotropic phase boundaries. Overall, we pose that an in-depth understanding of complex disordered materials away from thermodynamic equilibrium necessitates understanding not only of the generative processes that can lead to observed microscopic states, but also the causal links between multiple interacting subsystems.

preprint2020arXiv

Causal analysis of competing atomistic mechanisms in ferroelectric materials from high-resolution Scanning Transmission Electron Microscopy data

Machine learning has emerged as a powerful tool for the analysis of mesoscopic and atomically resolved images and spectroscopy in electron and scanning probe microscopy, with the applications ranging from feature extraction to information compression and elucidation of relevant order parameters to inversion of imaging data to reconstruct structural models. However, the fundamental limitation of machine learning methods is their correlative nature, leading to extreme susceptibility to confounding factors. Here, we implement the workflow for causal analysis of structural scanning transmission electron microscopy (STEM) data and explore the interplay between physical and chemical effects in ferroelectric perovskite across the ferroelectric-antiferroelectric phase transitions. The combinatorial library of the Sm-doped BiFeO3 is grown to cover the composition range from pure ferroelectric BFO to orthorhombic 20% Sm-doped BFO. Atomically resolved STEM images are acquired for selected compositions and are used to create a set of local compositional, structural, and polarization field descriptors. The information-geometric causal inference (IGCI) and additive noise model (ANM) analysis are used to establish the pairwise causal directions between the descriptors, ordering the data set in the causal direction. The causal chain for IGCI and ANM across the composition is compared and suggests the presence of common causal mechanisms across the composition series. Ultimately, we believe that the causal analysis of the multimodal data will allow exploring the causal links between multiple competing mechanisms that control the emergence of unique functionalities of morphotropic materials and ferroelectric relaxors.

preprint2020arXiv

Dynamic manipulation in piezoresponse force microscopy: creating non-equilibrium phases with large electromechanical response

Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of mesoscale phenomena ranging from giant electromechanical responses to memory effects. Exploring the functionalities of individual domain walls, their interactions, and controlled modifications of the domain structures is crucial for applications and fundamental physical studies. However, the dynamic nature of these features severely limits studies of their local physics since application of local biases or pressures in piezoresponse force microscopy induce wall displacement as a primary response. Here, we introduce a fundamentally new approach for the control and modification of domain structures based on automated experimentation whereby real space image-based feedback is used to control the tip bias during ferroelectric switching, allowing for modification routes conditioned on domain states under the tip. This automated experiment approach is demonstrated for the exploration of domain wall dynamics and creation of metastable phases with large electromechanical response.

preprint2020arXiv

Flexo-induced ferroelectricity in low dimensional transition metal dichalcogenides

We developed a Landau type theory for the description of polar phenomena in low-dimensional transition metal dichalcogenides (TMDs), specifically exploring flexoelectric origin of the polarization induced by a spontaneous bending and by inversion symmetry breaking due to the interactions with substrate. We consider the appearance of the spontaneous out-of-plane polarization due to the flexoelectric coupling with the strain gradient of the spontaneous surface rippling and surface-induced piezoelectricity. Performed calculations proved that the out-of-plane spontaneous polarization, originated from flexoelectric effect in a rippled TMD, is bistable and reversible by a non-uniform electric field. In contrast, the spontaneous polarization induced by a misfit strain and symmetry-sensitive surface-induced piezoelectric coupling, cannot be reversed by an external electric field. The special attention is paid to the spectral analysis of the linear dielectric susceptibility and gain factor, which enhancement is critically important for the observation of the polar phenomena in low-dimensional TMDs by the surface-enhanced vibrational spectroscopy.

preprint2020arXiv

Strain engineering of ferromagnetic-graphene-ferroelectric nanostructures

We calculated a spin-polarized conductance in the almost unexplored nanostructure "high temperature ferromagnetic insulator/ graphene/ ferroelectric film" with a special attention to the impact of electric polarization rotation in a strained multiaxial ferroelectric film. The rotation and value of polarization vector are controlled by a misfit strain. We proposed a phenomenological model, which takes into account the shift of the Dirac point due to the proximity of ferromagnetic insulator and uses the Landauer formula for the conductivity of the graphene channel. We derived analytical expressions, which show that the strain-dependent ferroelectric polarization governs the concentration of two-dimensional charge carriers and Fermi level in graphene in a self-consistent way. We demonstrate the realistic opportunity to control the spin-polarized conductance of graphene by a misfit strain ("strain engineering") at room and higher temperatures in the nanostructures CoFeO4/graphene/PZT and Y3Fe5O12/graphene/PZT. Obtained results open the possibilities for the applications of ferromagnetic/graphene/ferroelectric nanostructures as non-volatile spin filters and spin valves.

preprint2020arXiv

The influence of the distribution function of ferroelectric nanoparticles sizes on their electrocaloric and pyroelectric properties

We consider a model of a nanocomposite based on non-interacting spherical single-domain ferroelectric nanoparticles of various sizes embedded in a dielectric matrix. The size distribution function of these nanoparticles is selected as a part of the Gaussian distribution from minimum to maximum radius (truncated normal distribution). For such nanocomposites, we calculate the dependences of the reversible part of the electric polarization, the electrocaloric temperature change, and the dielectric permittivity on the external electric field, which have the characteristic form of hysteresis loops. We then analyze the change in the shape of the hysteresis loops relative to the particle size distribution parameters. We demonstrate that for the same mean-square dispersion, the remanent polarization, coercive field, dielectric permittivity maximums, maximums and minimums of the electrocaloric temperature change depend most strongly on the most probable radius, moderately depend on the dispersion, and have the weakest dependency on the nanoparticle maximum radius. We calculated and analyzed the dependences of pyroelectric figures of merit on the average radius of the nanoparticles in the composite. The dependences confirm the presence of a phase transition induced by the size of the nanoparticles, which is characterized by the presence of a maxima near the critical average radius of the particles, the value of which increases with increasing dispersion of the distribution function.

preprint2019arXiv

Gate Voltage Control of Transition Metal Dichalcogenide Monolayers Quantum Yield

Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it has been shown experimentally that quantum yield in MoS2 and WSe2 monoatomic layers can reach values close to unity when electrostatic doping makes them intrinsic semiconductors. However, the available theoretical description does not give an understanding of the physical mechanisms underlying in the gate voltage control of quantum yield.This work is an attempt to propose a consistent semi-phenomenological theory of photo-induced charge carriers relaxation in 2D-TMDs, which allows obtaining an analytical dependence of the quantum yield on the voltage applied to the FET gate. We consider a standard experimental situation, when the 2D-TMD monolayer and the metal gate are plates of a flat capacitor, and the capacitor charge is proportional to the gate voltage. The dependences of the TMD monolayers quantum yield on the gate voltage and the carrier generation rate have been calculated for the cases of the prevailing recombination of free electrons and holes (radiative and non-radiative Auger recombination) and recombination of excitons (radiative and Auger recombination). In both cases analytical expressions were derived for the dependence of quantum yield on the gate voltage and photo-induced carriers generation rate at a fixed gate voltage. Quantitative agreement with experiment allows concluding about the relevance of the proposed theoretical model for the description of carriers photo-generation and recombination in 2D-TMD monolayers. Obtained results demonstrate the possibilities of 2D-TMD quantum yield control by the gate voltage and indicate that 2D-TMDs are promising candidates for modern optoelectronics devices.

preprint2019arXiv

Melting of Spatially Modulated Phases in La-doped BiFeO3 at Surfaces and Surface-Domain Wall Junctions

The interplay between the surface and domain wall phenomena in multiferroic LaxBi1-xFeO3 in the vicinity of morphotropic phase transition is explored on the atomic level. Scanning Transmission Electron Microscopy (STEM) has enabled mapping of atomic structures of the material with picometer-level precision, providing direct insight into the spatial distribution of the order parameters in this material and their behavior at surfaces and interfaces. Here, we use the thermodynamic Landau-Ginzburg-Devonshire (LGD) approach to explain the emergence of spatially modulated phases (SMP) in La0.22Bi0.78FeO3 films, and establish that the change of polarization gradient coefficients caused by La-doping is the primary driving mechanisms. The suppression, or "melting", of the SMP in the vicinity of the domain wall surface junction is observed experimentally and simulated in the framework of LGD theory. The melting originated from the system tendency to minimize electrostatic energy caused by long-range stray electric fields outside the film and related depolarization effects inside it. The observed behavior provides insight to the origin of surface and interface behaviors in multiferroics.

preprint2019arXiv

Phase Diagrams of Single Layer Two-Dimensional Transition Metal Dichalcogenides: Landau Theory

Single layer (SL) two-dimensional transition metal dichalcogenides (TMDs), such as MoS2, ReS2, WSe2, and MoTe2 have now become the focus of intensive fundamental and applied researches due to their intriguing and tunable physical properties. These materials exhibit a broad range of structural phases that can be induced via elastic strain, chemical doping, and electrostatic field effect. These transitions in turn can open and close the band gap of SL-TMDs, leading to metal-insulator transitions, and lead to emergence of more complex quantum phenomena. These considerations necessitate detailed understanding of the mesoscopic mechanisms of these structural phase transitions. Here we develop the Landau-type thermodynamic description of SL-TMDs on example of SL-(MoS2)1-x-(ReS2)x system and analyze the free energy surfaces, phase diagrams, and order parameter behavior. Our results predict the existence of multiple structural phases with 2-, 6- and 12-fold degenerated energy minima for in-plane and out of plane order parameters. This analysis suggests that out-of-plane ferroelectricity can exist in many of these phases, with the switchable polarization being proportional to the out-of-plane order parameter. We further predict that the domain walls in SL-(MoS2)1-x-(ReS2)x should become conductive above a certain strain threshold.

preprint2016arXiv

Ballistic conductivity of graphene channel with p-n junction on ferroelectric domain wall

We study the impact of the ferroelectric domain wall on the ballistic conductance of the single-layer graphene channel in the heterostructure graphene / physical gap / ferroelectric film using Wentzel-Kramers-Brillouin approximation. Both self-consistent numerical modeling of the electric field and space charge dynamics in the heterostructure and approximate analytical theory show that the domain wall contact with the surface creates p-n junction in graphene channel. We calculated that the carriers' concentration induced in graphene by uncompensated ferroelectric dipoles originated from the spontaneous polarization abrupt near the surface can reach the values of 1019 m-2 order, which is in two orders higher than it can be obtained for the gate doped graphene on non-ferroelectric substrates. Therefore we predict that graphene channel with the p-n junction caused by ferroelectric domain wall would be characterized by rather high ballistic conductivity.

preprint2016arXiv

Extrinsic size effect of pyroelectric response of ferroelectric films

We developed a theoretical model for the calculation of the main characteristics of pyroelectric response of pyroactive multilayer structures, which are basic elements of modern pyroelectric detectors of radiation and other transducers. In the framework of the proposed model, the dependences of the pyroelectric response frequency spectra on the ferroelectric film thickness have been investigated. It was found that a pronounced extrinsic size effect is inherent to the pyroelectric response frequency spectra, such as the strong thickness dependence of the response maximal value and its frequency position. Thickness dependences of the frequency position of the pyroelectric response maximum and the optimal thickness of the pyroactive ferroelectric film are calculated. The frequency spectra of the pyroelectric current and voltage calculated theoretically are in quantitative agreement with experimental ones for Al/P(VDF-TrFE)/Ti/Si pyroactive structure. Developed procedure is important for improving the sensitivity of pyroelectric devices. Obtained analytical expressions allow us to optimize the performances of pyroactive elements using the existence of the size effect, which depend on pyroactive layer and substrate thicknesses, as well as on the conditions of heat transfer and exchange at corresponding boundaries of the pyroactive structure.

preprint2016arXiv

Flexocoupling impact on the size effects of piezo- response and conductance in mixed-type ferroelectrics-semiconductors under applied pressure

Flexocoupling impact on the size effects of the spontaneous polarization, effective piezo-response, elastic strain and compliance, carrier concentration and piezo-conductance have been calculated in thin films of ferroelectric semiconductors with mixed-type conductivity under applied pressure. Analysis of the self-consistent calculation results revealed that the thickness dependences of aforementioned physical quantities, calculated at zero and nonzero flexoelectric couplings, are very similar under zero applied pressure, but become strongly different under the application of external pressure pext. At that the differences become noticeably stronger for the film surface under compression than under tension. The impact of the Vegard mechanism on the size effects is weaker in comparison with flexocoupling except for the thickness dependence of the piezo-conductance. Without flexoelectric coupling the studied physical quantities manifest conventional peculiarities that are characteristic of the size-induced phase transitions. Namely, when the film thickness h approaches the critical thickness hcr the transition to paraelectric phase occurs. The combined effect of flexoelectric coupling and external pressure induces polarizations at the film surfaces, which cause the electric built-in field that destroys the thickness-induced phase transition to paraelectric phase at h= hcr and induces the electret-like state with irreversible spontaneous polarization at h<hcr. The built-in field leads to noticeable increase of the average strain and elastic compliance under the film thickness decrease below hcr that scales as 1/h at small thicknesses h. The changes of the electron concentration by several orders of magnitude under positive or negative pressures can lead to the occurrence of high- or low-conductivity states, i.e. the nonvolatile piezo-resistive switching.

preprint2016arXiv

Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current

Here we present the theory of the conductivity of pn junction (pnJ) in graphene channel, placed on ferroelectric substrate, caused by ferroelectric domain wall (FDW) for the case of arbitrary current regime: from ballistic to diffusive one. We calculated the ratio of the pnJ conductions for opposite polarities of voltages, applied to source and drain electrodes of the channel,G+/G- as the function of the graphene channel length L, electron mean free path λ and ferroelectric substrate permittivity. We have demonstrated, that the small values of G+/G-(0.1 and smaller), which correspond to efficient graphene pnJ based rectifier, can be obtained for the ferroelectrics with high and for the ratios of L/λ~1 or smaller. However, for ferroelectrics with extremely high permittivity(relaxor or PbZrxTi1-xO3 with composition x near the morphotropic phase boundary x=0.52) the ratio G+/G- can be essentially smaller then unity for the case of a pronounced diffusive regime of current as well. This makes the ferroelectric substrates with high permittivity excellent candidates for the fabrication of new generation of rectifiers based on the graphene pnJ. Temperature effect on ratio was studied within Landau-Ginzburg-Devonshire approach. We have demonstrated that rectifying properties of the graphene pnJ become better in the vicinity of Curie temperature. However, for the temperatures higher than Curie temperature the rectifying effect vanishes due to the ferroelectric polarization disappearance.

preprint2016arXiv

The influence of elastic strain gradient on the upper limit of flexocoupling strength, spatially-modulated phases and soft phonon dispersion in ferroics

Within the framework of Landau-Ginzburg-Devonshire (LGD) theory we studied the role of the flexocoupling between the order parameter and elastic strain gradients in the stability of a spatially-modulated phase (SMP) in ferroics with commensurate and incommensurate long-range ordered phases under the presence of squired elastic strain gradient. The squired elastic strain gradient is required for the free energy stability to arbitrary strain gradients. Obtained analytical expressions showed that the fundamental upper limit for the magnitude of the static bulk flexoelectric effect strength, established by Yudin and Tagantsev under the absence of squired elastic strain gradient and higher order gradients terms, should be substituted by the temperature-dependent condition on the flexoelectric coupling strength under the presence of the gradient terms. Moreover, we established that the SMP appears and becomes stable in commensurate ferroics if the flexocoupling constant exceeds the critical value, defined by the reduced temperature, strain and order parameter gradients constants, striction and expansion coefficients in the LGD functional. We calculated the soft phonon dispersion in ferroics with commensurate and incommensurate long-range ordered phases allowing for the squired elastic strain gradient, as well as static and dynamic flexocoupling. Appeared that the dispersion for the optic mode is slightly sensitive to the flexocoupling, while the dispersion of acoustic mode strongly depends on the coupling strength. Obtained results demonstrate that the non-trivial differences in the dispersion of optic and acoustic modes appear under the change of flexocoupling constant.

preprint2015arXiv

Finite size effects in ferroelectric-semiconductor thin films under open-circuited electric boundary conditions

General features of finite size effects in the ferroelectric-semiconductor film under open-circuited electric boundary conditions are analyzed using Landau-Ginzburg-Devonshire theory and continuum media electrostatics. The temperature dependence of the film critical thickness, spontaneous polarization and depolarization field profiles of the open-circuited films are found to be significantly different compared to the short-circuited ones. In particular, we predict the re-entrant type transition boundary between the mono-domain and poly-domain ferroelectric states due to reduced internal screening efficiency and analyzed possible experimental scenarios created by this mechanism. This analysis is relevant to the behavior of the free-standing ferroelectric films and scanning-probe microscopy based experiments on free ferroelectric surfaces.

preprint2015arXiv

Flexocoupling impact on the generalized susceptibility and soft phonon modes in the ordered phase of ferroics

Flexoelectric effect impact on the generalized susceptibility and soft phonons dispersion was not studied in the long-range ordered phases of ferroics. The gap in the knowledge motivated us to establish the impact of the flexocoupling on the correlation function of the long-range order parameter fluctuations in ferroelectric phase of ferroics with local disordering sources. Within Landau-Ginzburg-Devonshire approach we obtained analytical expressions for the generalized susceptibility and phonon dispersion relations in the ferroelectric phase. Unexpectedly, the joint action of static and dynamic flexoelectric effect induces non-diagonal components of generalized susceptibility, which amplitude is proportional to the convolution of the spontaneous polarization with flexocoupling constants. The flexocoupling essentially broaden the k-spectrum of generalized susceptibility and so decreases the correlation radii, as well as leads to the additional "pushing away" of the optical and acoustic soft mode phonon branches. The contribution of spontaneous polarization via ferroelectric nonlinearity and electrostriction mechanisms can lead to both broadening and narrowing on the susceptibility k-spectrum. Due to the joint action of flexoelectric coupling and spontaneous polarization the degeneration of the transverse optic and acoustic modes disappears in the soft phonon spectrum in a ferroelectric phase in comparison with the spectra in a paraelectric phase. These effects have been studied quantitatively for ferroelectric lead zirconate titanate using realistic values of static and dynamic flexocouplings and cubic symmetry approximation for the elastic properties. Also we derived general expressions for correlation function for arbitrary symmetry, elastic and electrostrictive anisotropy.

preprint2015arXiv

Linear roto-antiferromagnetic effect in multiferroics: physical manifestations

Using the theory of symmetry and the microscopic model we predicted the possibility of a linear roto-antiferromagnetic effect in the perovskites with structural antiferrodistortive and antiferromagnetic long-range ordering and found the necessary conditions of its occurrence. The main physical manifestations of this effect are the smearing of the antiferromagnetic transition and the jump of the specific heat near it. In the absence of external fields linear roto-antiferromagnetic coupling can induce a weak antiferromagnetic ordering above the Neel temperature, but below the temperature of antiferrodistortive transition. Therefore, there is the possibility of observing weak antiferromagnetism in multiferroics such as bismuth ferrite (BiFeO3) at temperatures T>TN, for which the Neel temperature TN is about 645 K, and the antiferrodistortive transition temperature is about 1200 K. By quantitative comparison with experiment we made estimations of the linear roto-antiferromagnetic effect in the solid solutions of multiferroic Bi1-xRxFeO3 (R=La, Nd).

preprint2015arXiv

Reentrant phase in nanoferroics induced by the flexoelectric and Vegard effects

We explore the impact of the flexoelectric effect and Vegard effect (chemical pressure) on the phase diagrams, long-range polar order and related physical properties of the spherical ferroelectric nanoparticles using Landau-Ginzburg-Devonshire phenomenological approach. The synergy of these effects can lead to the remarkable changes of the nanoparticles' phase diagrams. In particular, a commonly expected transition from ferroelectric to paraelectric phase at some small critical size is absent; so that the critical size loses its sense. Contrary, the stabilization of the ferroelectric phase manifests itself by the enhancement of the transition temperature and polarization with the particle size decrease. Ferroelectric phase reentrant phenomenon was observed earlier in the tetragonal BaTiO3 nanospheres of radii 5-50 nm [Zhu et al., JAP 112, 064110 (2012)] and stayed unexplained up to now. Our calculations have shown the physical mechanism of the exciting phenomenon is the flexo-chemo-effect. Since the spontaneous flexoelectric coupling, as well as ion vacancies, should exist in any nanostructured ferroelectrics, obtained analytical results can be valid for many nanoferroelectrics, where reentrant phases appearance can be forecasted.

preprint2015arXiv

Self-consistent theory of nanodomain formation on non-polar surfaces of ferroelectrics

We propose a self-consistent theoretical approach capable to describe the peculiarities of the anisotropic nanodomain formation induced by a charged AFM probe on non-polar cuts of ferroelectrics. The proposed semi-phenomenological approach accounts for the difference of the threshold fields required for the domain wall motion along non-polar X- and Y - cuts, and polar Z - cut of LiNbO3. The effect steams from the fact, that the minimal distance between the equilibrium atomic positions of domain wall and the profile of lattice pinning barrier appeared different for different directions due to the crystallographic anisotropy. Using relaxation-type equation with cubic nonlinearity we calculated the polarization reversal dynamics during the probe-induced nanodomain formation for different threshold field values. The different velocity of domain growth and consequently equilibrium domain sizes on X-, Y- and Z-cuts of LiNbO3 originate from the anisotropy of the threshold field. Note that the smaller is the threshold field the larger are the domain sizes, and the fact allows explaining several times difference in nanodomain length experimentally observed on X- and Y-cuts of LiNbO3. Obtained results can give insight into the nanoscale anisotropic dynamics of polarization reversal in strongly inhomogeneous electric field.

preprint2015arXiv

Theoretical description of anomalous properties of novel room temperature multiferroics Pb(Fe1/2Ta1/2)x(Zr0.53Ti0.47)1-xO3 and Pb(Fe1/2Nb1/2)x(Zr0.53Ti0.47)1-xO3

The theoretical description of the anomalous ferroelectric, ferromagnetic and magnetoelectric properties of Pb(Fe1/2Ta1/2)x(Zr0.53Ti0.47)1-xO3 and Pb(Fe1/2Nb1/2)x(Zr0.53Ti0.47)1-xO3 micro-ceramics is given. We performed calculations of temperature, composition and external field dependence of ferroelectric, ferromagnetic and antiferromagnetic phases transition temperatures, remanent polarization, magnetization, hysteresis loops, coercive fields, dielectric permittivity and magnetoelectric coupling. Special attention was paid to comparison of the developed theory with experiments. It appeared possible to describe adequately the main experimental results including a reasonable agreement between the shape of calculated hysteresis loops and remnant polarization value with measured loops and polarization. Information about linear and nonlinear magnetoelectric coupling coefficients was extracted from the experimental data. From the fitting of experimental data with theoretical formula it appeared possible to obtain composition dependence of Curie-Weiss constant that is known to be inversely proportional to harmonic (linear) dielectric stiffness, as well as the strong nonlinear dependence of anharmonic parameters of free energy. Keeping in mind the essential influence of these parameters on the multiferroic properties the obtained results open the way to govern practically all the material properties with the help of suitable choice of composition. The forecast of the strong enough influence of antiferrodistortive order parameter on the transition temperatures and so on the phase diagrams and properties of multiferroics is made on the basis of the developed theory.

preprint2014arXiv

Electrostrictive and electrostatic responses in contact mode voltage modulated Scanning Probe Microscopies

Electromechanical response of solids underpins image formation mechanism of several scanning probe microscopy techniques including the piezoresponse force microscopy (PFM) and electrochemical strain microscopy (ESM). While the theory of linear piezoelectric and ionic responses are well developed, the contributions of quadratic effects including electrostriction and capacitive tip-surface forces to measured signal remain poorly understood. Here we analyze the electrostrictive and capacitive contributions to the PFM and ESM signals and discuss the implications of the dielectric tip-surface gap on these interactions.

preprint2014arXiv

Humidity effects on tip-induced polarization switching in lithium niobate

Interest to ferroelectric materials has been increased significantly in last decades due to development of new generation of nonlinear optical and data storage devices. Scanning probe microscopy (SPM) can be used both for study of domain structures with nanoscale spatial resolution and for writing the isolated nanodomains by local application of the electric field. Tip-induced switching in the ambient still needs experimental investigations and theoretical explorations. Here we studied influence of the value of relative humidity in the SPM chamber on the process of tip-induced polarization switching. This phenomenon was attributed to existing of the water meniscus between tip and the sample surface in humid atmosphere. Presented results are important for further complex investigations of the ferroelectric materials and their applications.

preprint2014arXiv

New room temperature multiferroics on the base of single-phase nanostructured perovskites

The theoretical description of the nanostructured Pb(Fe1/2Ta1/2)x(Zr1/2Ti1/2)1-xO3 (PFTx-PZT(1-x)) and Pb(Fe1/2Nb1/2)x(Zr1/2Ti1/2)1-xO3 (PFNx-PZT(1-x)) intriguing ferromagnetic, ferroelectric and magnetoelectric properties at temperatures higher than 100 K are absent to date. The goal of this work is to propose the theoretical description of the physical nature and the mechanisms of the aforementioned properties, including room temperature ferromagnetism, phase diagram dependence on the composition x with a special attention to the multiferroic properties at room temperature, including anomalous large value of magnetoelectric coefficient. The comparison of the developed theory with experiments establishing the boundaries between paraelectric, ferroelectric, paramagnetic, antiferromagnetic, ferromagnetic and magnetoelectric phases, as well as the characteristic features of ferroelectric domain switching by magnetic field are performed and discussed. The experimentally established absence of ferromagnetic phase in PFN, PFT and in the solid solution of PFN with PbTiO3 (PFNx-PT(1-x)) was explained in the framework of the proposed theory.

preprint2014arXiv

Rotomagnetic couplings influence on the magnetic properties of antiferrodistortive antiferromagnets

Within the framework of Landau-Ginzburg-Devonshire (LGD) phenomenological theory we consider the possibility to control properties of paraelectric antiferromagnets via biquadratic rotomagnetic coupling with and without external magnetic and electric field application. We use EuTiO3 as a prototype with relatively well-known material parameters. Surprisingly strong influence of this coupling practically on all the properties without external fields was obtained in the temperature region with coexistence of antiferromagnetic and antiferrodistorted phases i.e. in multiferroic state. In particular, the observed Neel temperature TN (5.5 K) was shown to be defined by rotomagnetic coupling, while without this coupling TN appeared to be much higher (26 K). For small or high enough rotomagnetic coupling constant value the antiferromagnetic phase transition order appeared to be the second or the first order respectively. The essential influence of rotomagnetic coupling on the form and value of magnetic and dielectric permittivity was also forecasted. The rotomagnetic coupling along with rotoelectric one opens the additional way to control the form of the phase diagrams by application of external magnetic or electric field. The critical value of the electric field (for antiferromagnetic to ferromagnetic phase transition) appeared essentially smaller than the one calculated without rotomagnetic coupling that can be important for applications.

preprint2013arXiv

Defect thermodynamics and kinetics in thin strained ferroelectric films: the interplay of possible mechanisms

We present a theoretical description of the influence of misfit strain on mobile defects dynamics in thin strained ferroelectric films. Self-consistent solutions obtained by coupling the Poissons equation for electric potential with continuity equations for mobile donor and electron concentrations and time-dependent Landau-Ginzburg-Devonshire equations reveal that the Vegard mechanism (chemical pressure) leads to the redistribution of both charged and electro-neutral defects in order to decrease the effective stress in the film. Internal electric fields, both built-in and depolarization ones, lead to a strong accumulation of screening space charges (charged defects and electrons) near the film interfaces. Importantly, the corresponding screening length is governed by the misfit strain and Vegard coefficient. Mobile defects dynamics, kinetics of polarization and electric current reversal are defined by the complex interplay between the donor, electron and phonon relaxation times, misfit strain, finite size effect and Vegard stresses.

preprint2013arXiv

Effective piezoelectric response of twin walls in ferroelectrics

The effective piezoelectric coefficients of twin walls in tetragonal ferroelectric are calculated in the framework of decoupling approximation and Landau-Ginzburg-Devonshire theory allowing for polarization gradient terms, electrostriction and flexoelectric coupling. Using an example of piezoelectric response of a1-a2 twins to a homogeneous electric field, we show that the response is almost independent on the flexoelectric coupling, but is very sensitive to the values of polarization gradient coefficients. This behavior originates from the strong coupling between local dielectric susceptibility and the gradient coefficients. The enhancement of piezoelectric response from 10% up to a factor of 103 times is predicted. The local electromechanical response of the domain walls can thus provide information on the gradient terms in GLD expansion and pinning mechanisms of the ferroelectric domain walls. The observability of these effects by the piezoresponse force microscopy of electroded structures and impact on the functional properties of the systems with dense domain structures is analyzed

preprint2013arXiv

Ferroelectric domain triggers the charge modulation in semiconductors

We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the space charge modulation profile and amplitude in the semiconductor, that screens the spontaneous polarization of a 180-degree domain structure of ferroelectric, depends on the domain structure period, dielectric layer thickness and semiconductor screening radius in a rather non-trivial nonlinear way. Multiple size effects appearance and manifestation are defined by the relationship between these three parameters. In addition, we show that the concept of effective gap can be introduced in a simple way only for a single domain limit. Obtained analytical results open the way for understanding of current AFM maps of contaminated ferroelectric surfaces in ambient atmosphere as well as explore the possibilities of conductivity control in ultra-thin semiconductor layers.

preprint2013arXiv

Low-symmetry monoclinic phase stabilized by oxygen octahedra rotations in thin strained EuxSr1-xTiO3 films

Using Landau-Ginzburg-Devonshire theory and phase field modeling, we explore the complex interplay between the long-range structural order parameter (oxygen octahedron rotations) and polarization in EuxSr1-xTiO3 thin epitaxial films. In biaxially tensile strained films, we discover the presence of a low symmetry monoclinic phase with in-plane ferroelectric polarization that is stabilized by antiferrodistortive oxygen octahedra tilts. The monoclinic phase is stable in a wide temperature range, and is characterized by the large number of energetically equivalent polar and structural twin domains, which stimulates easy twinning of the film and thus enhances its effective piezoelectric response. The flexoelectric coupling and rotostriction give rise to additional spontaneous polarization, piezo- and pyro-electricity in the ferroelastic twin boundaries.

preprint2013arXiv

Non-Ising Character of a Ferroelectric Wall Arises from a Flexoelectric Effect

Using the classic ferroelectric BaTiO$_3$ as an example, we show that the 180 degree ferroelectric domain wall, long considered to be of Ising-type and charge neural, contains both Bloch and Neel type polarization components, and is thus charged. The bound charge density at the wall may reach as high as 10$^6$~10$^7$ Cm$^{-3}$. It is demonstrated that the flexoelectric effect arising from stress inhomogeneity is responsible for the additional Bloch and Neel polarization components. The magnitudes of these additional components are determined by the competing depolarization and flexoelectric fields.

preprint2013arXiv

Novel multiferroics with ferromagnetic phase induced in paraelectric antiferromagnets by electric field application

The phase diagram of a quantum paraelectric antiferromagnet EuTiO3 under an external electric field was calculated using Landau-Ginzburg-Devonshire theory. It was shown that the application of an external electric field E leads to the appearance of a ferromagnetic phase due to the magnetoelectric coupling. In particular, electric field application decreases the transition temperature TAFM to antiferromagnetic (AFM) phase and induces ferromagnetic (FM) phase, so that at some E field larger than the critical field (Ecr), TFM becomes higher than TAFM and the FM phase appears. Note that Ecr increases and magnetization decreases as the temperature increases. The value of the critical field Ecr = 0.40*10^6 V/cm we calculated appeared close to the value Ecr = 0.5*10^6 V/cm obtained recently by Ryan et al. with the help of density functional theory for EuTiO3 film under a compressive strain produced by substrate. At the fields E >0.83*10^6 V/cm, AFM disappears for all considered temperatures and so FM becomes the only stable magnetic phase. We find that ferromagnetic phase can be induced by an E-field in other paraelectric antiferromagnet oxides with a positive AFM-type magnetoelectric (ME) coupling coefficient and negative FM-type ME coupling coefficient. In particular, the critical E-field was estimated for another paraelectric antiferromagnet Sr0.7Ba0.3MnO3 as 0.2x10^5V/cm at 0 K. Analysis of the dependence of magnetization and antimagnetization on the external electric field and the polarization induced by the field, which yields the magnetoelectric coupling, is reported. The results show the possibility to control multiferroicity, including the FM and AFM phases, with help of an electric field application.

preprint2013arXiv

Space charge dynamics in solid electrolytes with steric effect and Vegard stresses: resistive switching and ferroelectric-like hysteresis of electromechanical response

We performed self-consistent modelling of electrotransport and electromechanical response of solid electrolyte thin films allowing for steric effects of mobile charged defects (ions, protons or vacancies), electron degeneration and Vegard stresses. We establish correlations between the features of the space-charge dynamics, current-voltage and bending-voltage curves in the wide frequency range of applied electric voltage. The pronounced ferroelectric-like hysteresis of bending-voltage loops and current maxima on double hysteresis current-voltage loops appear for the electron-open electrodes. The double hysteresis loop with pronounced humps indicates the resistance switching of memristor-type. The switching occurs due to the strong coupling between electronic and ionic subsystem. The sharp meta-stable maximum of the electron density appears near one open electrode and moves to another one during the periodic change of applied voltage. Our results can explain the nature and correlation of electrical and mechanical memory effects in thin films of solid electrolytes. The analytical expression proving that the electrically induced bending of solid electrolyte films can be detected by interferometric methods is derived.

preprint2013arXiv

Universal emergence of spatially-modulated structures induced by flexo-antiferrodistortive coupling in multiferroics

We proved the existence of a universal flexo-antiferrodistortive coupling as a necessary complement to the well-known flexoelectric coupling. The coupling is universal for all antiferrodistortive systems and can lead to the formation of incommensurate, spatially-modulated phases in multiferroics. Our analysis can provide a self-consistent mesoscopic explanation for a broad range of modulated domain structures observed experimentally in multiferroics.

preprint2012arXiv

Anisotropic conductivity of uncharged domain walls in BiFeO3

Experimental observations suggest that nominally uncharged, as-grown domain walls in ferroelectric thin films can be conductive, yet comprehensive theoretical models to explain this behavior are lacking. Here, Landau theory is used to evolve an analytical treatment of the anisotropic carrier accumulation by nominally uncharged domain walls in multiferroic BiFeO3. Strong angular dependence of the carrier accumulation by 180-degree domain walls originates from local band bending via angle-dependent electrostriction and flexoelectric coupling mechanisms. Theoretical results are in qualitative agreement with experimental data, and provide a Landau-Ginzburg-Devonshire counterpart that is consistent with recent first principles calculations. These studies suggest that a significantly more diverse range of domain wall structures could possess novel electronic properties than previously believed. Similarly, emergent electronic behaviors at ferroic walls are typically underpinned by multiple mechanisms, necessitating first-principle studies of corresponding coupling parameters.

preprint2012arXiv

Conductivity of twin walls - surface junctions in ferroelastics: interplay of deformation potential, octahedral rotations, improper ferroelectricity and flexoelectric coupling

Electronic and structural phenomena at the twin domain wall-surface junctions in the ferroelastic materials are analyzed. Carriers accumulation caused by the strain-induced band structure changes originated via the deformation potential mechanism, structural order parameter gradient, rotostriction and flexoelectric coupling is explored. Approximate analytical results show that inhomogeneous elastic strains, which exist in the vicinity of the twin walls - surface junctions due to the rotostriction coupling, decrease the local band gap via the deformation potential and flexoelectric coupling mechanisms. This is the direct mechanism of the twin walls static conductivity in ferroelastics and, by extension, in multiferroics and ferroelectrics. On the other hand, flexoelectric and rotostriction coupling leads to the appearance of the improper polarization and electric fields proportional to the structural order parameter gradient in the vicinity of the twin walls - surface junctions. The "flexo-roto" fields leading to the carrier accumulation are considered as indirect mechanism of the twin walls conductivity. Comparison of the direct and indirect mechanisms illustrates complex range of phenomena directly responsible for domain walls static conductivity in materials with multiple order parameters.

preprint2012arXiv

Correlation Between Structure And C-Afm Contrast Of 180-Degree Domain Walls In Rhombohedral Bati03

Using Landau-Ginzburg-Devonshire theory we describe 180-degree domain wall structure, intrinsic energy and carrier accumulation in rhombohedral phase of BaTiO3 as a function of the wall orientation and flexoelectric coupling strength. Two types of domain wall structures (phases of the wall) exist depending on the wall orientation. The low-energy 'achiral' phase occurs in the vicinity of the {110} wall orientation and has odd polarization profile invariant with respect to inversion about the wall center. The second 'chiral' phase occurs around {211} wall orientations and corresponds to mixed parity domain walls that may be of left-handed or right-handed chirality. The transformation between the phases is abrupt, accompanied with 20-30% change of the domain wall thickness and can happen at fixed wall orientation with temperature change. We suggest that the phase transition may be detected through domain wall thickness change or by c-AFM. The structure of the domain wall is correlated to its conductivity through polarization component normal to the domain wall, which causes free carriers accumulation. Depending on the temperature and flexoelectric coupling strength relative conductivity of the wall becomes at least one order of magnitude higher than in the single-domain region, creating c-AFM contrast enhancement pronounced and detectable.

preprint2012arXiv

Ionically-mediated electromechanical hysteresis in transition metal oxides

Electromechanical activity, remanent polarization states, and hysteresis loops in paraelectric TiO2 and SrTiO3 are observed. The coupling between the ionic dynamics and incipient ferroelectricity in these materials is analyzed using extended Ginsburg Landau Devonshire (GLD) theory. The possible origins of electromechanical coupling including ionic dynamics, surface-charge induced electrostriction, and ionically-induced ferroelectricity are identified. For the latter, the ionic contribution can change the sign of first order GLD expansion coefficient, rendering material effectively ferroelectric. These studies provide possible explanation for ferroelectric-like behavior in centrosymmetric transition metal oxides.

preprint2012arXiv

Mesoscopic mechanism of the domain wall interaction with elastic defects in ferroelectrics

The role of elastic defects on the kinetics of 180-degree uncharged ferroelectric domain wall motion is explored using continuum time-dependent LGD equation with elastic dipole coupling. In one dimensional case, ripples, steps and oscillations of the domain wall velocity appear due to the wall-defect interactions. While the defects do not affect the limiting-wall velocity vs. field dependence, they result in the minimal threshold field required to activate the wall motions. The analytical expressions for the threshold field are derived and the latter is shown to be much smaller than the thermodynamic coercive field. The threshold field is linearly proportional to the concentration of defects and non-monotonically depends on the average distance between them. The obtained results provide the insight into the mesoscopic mechanism of the domain wall pinning by elastic defects in ferroelectrics.

preprint2012arXiv

New multiferroics based on EuxSr1-xTiO3 nanotubes and nanowires

Using Landau-Ginzburg-Devonshire theory we study the complex interplay between structural antiferrodistortive order parameter (oxygen octahedron rotations), polarization and magnetization in EuxSr1-xTiO3 nanotubes and nanowires. We calculated EuxSr1-xTiO3 bulk and nanosystem phase diagrams, which include the antiferrodistortive, ferroelectric, ferromagnetic and antiferromagnetic phases. Our calculation shows the presence of "triple" antiferrodistortive-ferroelectric-ferromagnetic phases for EuxSr1-xTiO3 nanowires and nanotubes. presents interest for fundamental study and can be important for their potential applications. Since the triple phase exists at low temperatures (<10 K) with high polarization and magnetization values (~50 muC/cm2 and ~0.5 MA/m2). Therefore, the strong coupling between structural distortions, polarization and magnetization suggest the EuxSr1-xTiO3 nanosystems as strong candidates for possible miltiferroic applications.

preprint2012arXiv

Pyroelectric origin of the carrier density modulation at graphene-ferroelectric interface

Using continuous approximation we study the static and high-frequency heat dissipation in multi-layer graphene on a ferroelectric. We demonstrate that the Joule heating effect, caused by a high-frequency ac electric current in graphene, creates a pronounced temperature gradient in a ferroelectric substrate. The pyroelectric effect transforms the gradient into the spontaneous polarization gradient.. Therefore, the high-frequency depolarizing electric field occurs and penetrates in the multi-layer graphene. Free charges in graphene immediately screen the electric field and thus their density oscillates at high-frequency. Performed calculations had proved that the pyroelectric effect can modify essentially the free carrier density at the graphene-ferroelectric interface and consequently the conductivity of multi-layer graphene channel. So, pyroelectric mechanism can be critical for understanding of the complex physical thermal and electrical processes taking place across and along graphene-ferroelectric interfaces at terahertz frequencies.

preprint2011arXiv

Domain wall conduction in multiaxial ferroelectrics

The conductance of domain wall structures consisting of either stripes or cylindrical domains in multi-axial ferroelectric-semiconductors is analyzed. The effects of the domain size, wall tilt and curvature, on charge accumulation, are analyzed using the Landau-Ginsburg Devonshire (LGD) theory for polarization combined with Poisson equation for charge distributions. Both the classical ferroelectric parameters including expansion coefficients in 2-4-6 Landau potential and gradient terms, as well as flexoelectric coupling, inhomogeneous elastic strains and electrostriction are included in the present analysis. Spatial distributions of the ionized donors, free electrons and holes were found self-consistently using the effective mass approximation for the respective densities of states. The proximity and size effect of the electron and donor accumulation/depletion by thin stripe domains and cylindrical nanodomains are revealed. In contrast to thick domain stripes and thicker cylindrical domains, in which the carrier accumulation (and so the static conductivity) sharply increases at the domain walls only, small nanodomains of radius less then 5-10 correlation length appeared conducting across entire cross-section. Implications of such conductive nanosized channels may be promising for nanoelectronics.

preprint2011arXiv

Ferroelectricity and ferromagnetism in EuTiO3 nanowires

We predicted the ferroelectric-ferromagnetic multiferroic properties of EuTiO3 nanowires and generated the phase diagrams in coordinates of temperature and wire radii. The calculations were performed within the Landau-Ginzburg-Devonshire theory with phenomenological parameters extracted from tabulated experimental data and first principles calculations. Since bulk EuTiO3 is antiferromagnetic at temperatures lower than 5.5 K and paraelectric at all temperatures, our goal was to investigate the possibility of inducing the ferroelectric and ferromagnetic properties of EuTiO3 by reducing the bulk to nanosystems. Our results indicate that ferroelectric spontaneous polarization of ~0.1-0.5C/m2 is induced in EuTiO3 nanowires due to the intrinsic surface stress, which is inversely proportional to the nanowire radius. The spontaneous polarization exists at temperatures lower than 300 K, for the wire radius less than 1 nm and typical surface stress coefficients ~ 15 N/m. Due to the strong biquadratic magnetoelectric coupling, the spontaneous polarization in turn induces the ferromagnetic phase at temperatures lower than 30 K for 2 nm nanowire, and at temperatures lower than 10 K for 4 nm nanowire in EuTiO3. Thus we predicted that the EuTiO3 nanowires can be the new ferroelectric-ferromagnetic multiferroic.

preprint2011arXiv

Interfacial Polarization and Pyroelectricity in Antiferrodistortive Structures Induced by a Flexoelectric Effect and Rotostriction

Theoretical analysis based on the Landau-Ginzburg-Devonshire (LGD) theory is used to show that the product effect of flexoelectricity and rotostriction can lead to a spontaneous polarization in the vicinity of antiphase boundaries, ferroelastic twin walls, surfaces and interfaces in the octahedrally tilted phase of otherwise non-ferroelectric perovskites such as CaTiO3, SrTiO3, and EuTiO3. As an example, we numerically demonstrate a large spontaneous polarization on the order of 1-5muC/cm2 at the SrTiO3 antidistortive phase boundaries at temperatures lower than the antiferrodistortive structural phase transition temperature of ~105 K

preprint2010arXiv

Impact of ferroelectric nonlinearity and correlation effects on nanodomain formation

Using direct variational method with 2-parametric trial function and Landau-Ginzburg-Devonshire thermodynamical approach, we derived analytical expressions for polarization spatial redistribution in the ferroelectrics caused by the biased Scanning Probe Microscope probe. We demonstrate that the shape of nanodomain induced by the probe electric field can be either oblate or prolate depending on the ferroelectric nonlinearity strength. For typical ferroelectric material parameters and probe apex geometry the domain nucleus aspect ratio is close to dielectric anisotropy factor. Corresponding coercive biases of a stable domain formation are in reasonable agreement with available experimental results. Spike-like domains typical for Landauer-Molotskii rigid approach appear in the considered case only when depolarization field energy contribution strongly dominates over the nonlinear correlation and field effects and domain wall energy.

preprint2008arXiv

Surface Effect on Domain Wall Width in Ferroelectrics

We study the effect of depolarization field related with inhomogeneous polarization distribution, strain and surface energy parameters on a domain wall profile near the surface of a ferroelectric film within the framework of Landau-Ginzburg-Devonshire phenomenology. Both inhomogeneous elastic stress and positive surface energy lead to the wall broadening at electrically screened surface. For ferroelectrics with weak piezoelectric coupling, the extrapolation length that defines surface energy parameter, affects the wall broadening more strongly than inhomogeneous elastic stress. Unexpectedly, the domain wall profile follows a long-range power law when approaching the surface, while it saturates exponentially in the bulk. In materials with high piezoelectric coupling and negligibly small surface energy (i.e. high extrapolation length) inhomogeneous elastic stress effect dominates.

preprint2008arXiv

Thermodynamics of nanodomain formation and breakdown in Scanning Probe Microscopy: Landau-Ginzburg-Devonshire approach

Thermodynamics of tip-induced nanodomain formation in scanning probe microscopy of ferroelectric films and crystals is studied using the Landau-Ginzburg-Devonshire phenomenological approach. The local redistribution of polarization induced by the biased probe apex is analyzed including the effects of polarization gradients, field dependence of dielectric properties, intrinsic domain wall width, and film thickness. The polarization distribution inside subcritical nucleus of the domain preceding the nucleation event is very smooth and localized below the probe, and the electrostatic field distribution is dominated by the tip. In contrast, polarization distribution inside the stable domain is rectangular-like, and the associated electrostatic fields clearly illustrate the presence of tip-induced and depolarization field components. The calculated coercive biases of domain formation are in a good agreement with available experimental results for typical ferroelectric materials. The microscopic origin of the observed domain tip elongation in the region where the probe electric field is much smaller than the intrinsic coercive field is the positive depolarization field in front of the moving counter domain wall. For infinitely thin domain walls local domain breakdown through the sample depth appears. The results obtained here are complementary to the Landauer-Molotskii energetic approach.

Anna N. Morozovska

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59 published item(s)

Coexistence of Ferroelectric and Relaxor-like Phases in a Multiferroic Solid Solution (1-x)Pb(Fe$_{1/2}$Nb$_{1/2}$)O$_3$-xPbMnO$_3$

Phase transitions in ferroelectric domain walls

Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?

Dynamic control of ferroionic states in ferroelectric nanoparticles

Electric field control of labyrinth domain structures in core-shell ferroelectric nanoparticles

Ferroelectricity in Hafnia Controlled via Surface Electrochemical State

Hypothesis Learning in Automated Experiment: Application to Combinatorial Materials Libraries

Observability of negative capacitance of a ferroelectric film: Theoretical predictions

Probing temperature-induced phase transitions at individual ferroelectric domain walls

Size Effect of Local Current-Voltage Characteristics of MX$_2$ Nanoflakes: Local Density of States Reconstruction from Scanning Tunneling Microscopy Experiments

Temperature-assisted Piezoresponse Force Microscopy: Probing Local Temperature-Induced Phase Transitions in Ferroics

A Combined Theoretical and Experimental Study of the Phase Coexistence and Morphotropic Boundaries in Ferroelectric-Antiferroelectric-Antiferrodistortive Multiferroics

Chemical control of polarization in thin strained films of a multiaxial ferroelectric: phase diagrams and polarization rotation

Exploring physics of ferroelectric domain walls via Bayesian analysis of atomically resolved STEM data

Mapping causal patterns in crystalline solids

Causal analysis of competing atomistic mechanisms in ferroelectric materials from high-resolution Scanning Transmission Electron Microscopy data

Dynamic manipulation in piezoresponse force microscopy: creating non-equilibrium phases with large electromechanical response

Flexo-induced ferroelectricity in low dimensional transition metal dichalcogenides

Strain engineering of ferromagnetic-graphene-ferroelectric nanostructures

The influence of the distribution function of ferroelectric nanoparticles sizes on their electrocaloric and pyroelectric properties

Gate Voltage Control of Transition Metal Dichalcogenide Monolayers Quantum Yield

Melting of Spatially Modulated Phases in La-doped BiFeO3 at Surfaces and Surface-Domain Wall Junctions

Phase Diagrams of Single Layer Two-Dimensional Transition Metal Dichalcogenides: Landau Theory

Ballistic conductivity of graphene channel with p-n junction on ferroelectric domain wall

Extrinsic size effect of pyroelectric response of ferroelectric films

Flexocoupling impact on the size effects of piezo- response and conductance in mixed-type ferroelectrics-semiconductors under applied pressure

Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current

The influence of elastic strain gradient on the upper limit of flexocoupling strength, spatially-modulated phases and soft phonon dispersion in ferroics

Finite size effects in ferroelectric-semiconductor thin films under open-circuited electric boundary conditions

Flexocoupling impact on the generalized susceptibility and soft phonon modes in the ordered phase of ferroics

Linear roto-antiferromagnetic effect in multiferroics: physical manifestations

Reentrant phase in nanoferroics induced by the flexoelectric and Vegard effects

Self-consistent theory of nanodomain formation on non-polar surfaces of ferroelectrics

Theoretical description of anomalous properties of novel room temperature multiferroics Pb(Fe1/2Ta1/2)x(Zr0.53Ti0.47)1-xO3 and Pb(Fe1/2Nb1/2)x(Zr0.53Ti0.47)1-xO3

Electrostrictive and electrostatic responses in contact mode voltage modulated Scanning Probe Microscopies

Humidity effects on tip-induced polarization switching in lithium niobate

New room temperature multiferroics on the base of single-phase nanostructured perovskites

Rotomagnetic couplings influence on the magnetic properties of antiferrodistortive antiferromagnets

Defect thermodynamics and kinetics in thin strained ferroelectric films: the interplay of possible mechanisms

Effective piezoelectric response of twin walls in ferroelectrics

Ferroelectric domain triggers the charge modulation in semiconductors

Low-symmetry monoclinic phase stabilized by oxygen octahedra rotations in thin strained EuxSr1-xTiO3 films

Non-Ising Character of a Ferroelectric Wall Arises from a Flexoelectric Effect

Novel multiferroics with ferromagnetic phase induced in paraelectric antiferromagnets by electric field application

Space charge dynamics in solid electrolytes with steric effect and Vegard stresses: resistive switching and ferroelectric-like hysteresis of electromechanical response

Universal emergence of spatially-modulated structures induced by flexo-antiferrodistortive coupling in multiferroics

Anisotropic conductivity of uncharged domain walls in BiFeO3

Conductivity of twin walls - surface junctions in ferroelastics: interplay of deformation potential, octahedral rotations, improper ferroelectricity and flexoelectric coupling

Correlation Between Structure And C-Afm Contrast Of 180-Degree Domain Walls In Rhombohedral Bati03

Ionically-mediated electromechanical hysteresis in transition metal oxides

Mesoscopic mechanism of the domain wall interaction with elastic defects in ferroelectrics

New multiferroics based on EuxSr1-xTiO3 nanotubes and nanowires

Pyroelectric origin of the carrier density modulation at graphene-ferroelectric interface

Domain wall conduction in multiaxial ferroelectrics

Ferroelectricity and ferromagnetism in EuTiO3 nanowires

Interfacial Polarization and Pyroelectricity in Antiferrodistortive Structures Induced by a Flexoelectric Effect and Rotostriction

Impact of ferroelectric nonlinearity and correlation effects on nanodomain formation

Surface Effect on Domain Wall Width in Ferroelectrics

Thermodynamics of nanodomain formation and breakdown in Scanning Probe Microscopy: Landau-Ginzburg-Devonshire approach