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V. V. Solovyev

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cond-mat.mes-hall cond-mat.str-el

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preprint2014arXiv

Detection of 2D electron g-factor sign inversion in narrow GaAs/AlGaAs quantum wells

By means of CW polarization-resolved photoluminescence spectroscopy we demonstrate the sign inversion of $g_z$ -component of 2D electron g-factor with narrowing of a hosting GaAs/Al $_{0.33}$ Ga $_{0.67}$ As quantum well (QW). The energy splitting between spectral lines correspoding to recombination from the electron lowest Landau level and possessing opposite curcular polarization is analyzed. Due to exchange interaction, this value reveals maximum or minimum as a function of magnetic field strength in the vicinity of electron filling factor $ν=3$ . The actual type of extremum depends on the electron $g_z$ -component sign. The method allows to detect the sign inversion of electron Lande g-factor with its absolute value changing by less than $Δg \approx 0.06$ . The reversal happens at a QW width of ( $65\pm 3$ Å).

preprint2012arXiv

Light-hole quantization in the optical response of ultrawide GaAs/Al $_x$ Ga $_{1-x}$ As quantum wells

Temperature-dependent reflectivity and photoluminescence spectra are studied for undoped ultra-wide 150 nm and 250 nm GaAs quantum wells. It is shown that spectral features previously attributed to a size quantization of exciton motion in z-direction coincide well with energies of quantized levels for light holes. Furthermore, optical spectra reveal very similar properties at temperatures above exciton dissociation point.

preprint2009arXiv

Measurement of binding energy of negatively charged excitons in GaAs/AlGaAs quantum wells

We report a photoluminescence study of electron-hole complexes in specially designed semiconductor heterostructures. Placing a remote dilute layer of donors at different distances \itshape d \normalfont from the quantum well leads to the transformation of luminescence spectra of neutral ( $X$ ) and negatively charged ( $X^{-}$ ) excitons. The onset of an additional spectral line and its energy dependence on \itshape d \normalfont allows us to unambiguously relate the so-called $X^{-}$ trion state with charged excitons bound on charged donors in a barrier. The results indicate the overestimation in free-trion binding energies from previous studies of GaAs/Al $_{0.3}$ Ga $_{0.7}$ As quantum wells, and give their corrected values for QWs of width 200 and 300 Å\space in the limiting case of infinitely distant donors.

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V. V. Solovyev

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3 publications

Detection of 2D electron g-factor sign inversion in narrow GaAs/AlGaAs quantum wells

Light-hole quantization in the optical response of ultrawide GaAs/Al $_x$ Ga $_{1-x}$ As quantum wells

Measurement of binding energy of negatively charged excitons in GaAs/AlGaAs quantum wells

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V. V. Solovyev

Research overview

Is this your work?

3 publications

Detection of 2D electron g-factor sign inversion in narrow GaAs/AlGaAs quantum wells

Light-hole quantization in the optical response of ultrawide GaAs/Alx_xx​Ga1−x_{1-x}1−x​As quantum wells

Measurement of binding energy of negatively charged excitons in GaAs/AlGaAs quantum wells

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Light-hole quantization in the optical response of ultrawide GaAs/Al $_x$ Ga $_{1-x}$ As quantum wells