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S. Schmult

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7works
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4close collaborators

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7 publications

preprint2012arXiv

Light-hole quantization in the optical response of ultrawide GaAs/Alx_xGa1−x_{1-x}As quantum wells

Temperature-dependent reflectivity and photoluminescence spectra are studied for undoped ultra-wide 150 nm and 250 nm GaAs quantum wells. It is shown that spectral features previously attributed to a size quantization of exciton motion in z-direction coincide well with energies of quantized levels for light holes. Furthermore, optical spectra reveal very similar properties at temperatures above exciton dissociation point.

preprint2010arXiv

Extra Spin-Wave mode in Quantum Hall systems. Beyond the Skyrmion Limit

We report on the observation of a new spin mode in a quantum Hall system in the vicinity of odd electron filling factors under experimental conditions excluding the possibility of Skyrmion excitations. The new mode having presumably zero energy at odd filling factors emerges at small deviations from odd filling factors and couples to the spin-exciton. The existence of an extra spin mode assumes a nontrivial magnetic order at partial fillings of Landau levels surrounding quantum Hall ferromagnets other then the Skyrmion crystal.

preprint2010arXiv

Interlayer tunneling in counterflow experiments on the excitonic condensate in quantum Hall bilayers

The effect of tunneling on the transport properties of} quantum Hall double layers in the regime of the excitonic condensate at total filling factor one is studied in counterflow experiments. If the tunnel current II is smaller than a critical ICI_C, tunneling is large and is effectively shorting the two layers. For I>ICI > I_C tunneling becomes negligible. Surprisingly, the transition between the two tunneling regimes has only a minor impact on the features of the filling-factor one state as observed in magneto-transport, but at currents exceeding ICI_C the resistance along the layers increases rapidly.

preprint2010arXiv

Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations

We report the observation of inverse-magnetic-field-periodic, radiation-induced magnetoresistance oscillations in GaAs/AlGaAs heterostructures prepared in W. Wegscheider's group, compare their characteristics with similar oscillations in V. Umansky's material, and describe the lineshape variation vs. the radiation power, PP, in the two systems. We find that the radiation-induced oscillatory ΔRxxΔR_{xx}, in both materials, can be described by ΔRxx=−Aexp(−λ/B)sin(2πF/B)ΔR_{xx} = -A exp(-λ/B)sin(2 πF/B), where AA is the amplitude, λλ is the damping parameter, and FF is the oscillation frequency. Both λλ and FF turn out to be insensitive to PP. On the other hand, AA grows nonlinearly with PP.

preprint2008arXiv

Antiphased Cyclotron-Magnetoplasma Mode in a Quantum Hall System

An antiphased magnetoplasma (MP) mode in a two-dimensional electron gas (2DEG) has been studied by means of inelastic light scattering (ILS) spectroscopy. Unlike the cophased MP mode it is purely quantum excitation which has no classic plasma analogue. It is found that zero momentum degeneracy for the antiphased and cophased modes predicted by the first-order perturbation approach in terms of the {\it e-e} interaction is lifted. The zero momentum energy gap is determined by a negative correlation shift of the antiphased mode. This shift, observed experimentally and calculated theoretically within the second-order perturbation approach, is proportional to the effective Rydberg constant in a semiconductor material.

preprint2008arXiv

Cyclotron spin-flip excitations in a ν=1/3 quantum Hall ferromagnet

Inelastic light scattering spectroscopy around the ν=1/3 filling discloses a novel type of cyclotron spin-flip excitation in a quantum Hall system in addition to the excitations previously studied. The excitation energy of the observed mode follows qualitatively the degree of electron spin polarization, reaching a maximum value at ν=1/3 and thus characterizing it as a ν=1/3 ferromagnet eigenmode. Its absolute energy substantially exceeds the theoretical prediction obtained within the renowned single-mode approximation. Double-exciton corrections neglected utilizing the single-mode approach are evaluated within the framework of the excitonic representation and are inferred to be responsible for the observed effect.

preprint2005arXiv

Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs

Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.

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