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Researcher profile

W. Dietsche

W. Dietsche contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.str-el

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Published work

5 published item(s)

preprint2021arXiv

Capacitance and conductance oscillations from electron tunneling into high energy levels of a quantum well in a p-i-n diode

Two-dimensional electron and hole gases separated by a few nm from each other are produced in p-i-n diodes based upon MBE-grown GaAs/AlGaAs heterostructures. At such interlayer distances, the exciton formation and possibly Bose-Einstein condensation (BEC) is expected. We measure the capacitance between the layers and find it to oscillate as a function of the bias voltage. The peak values exceed the geometric capacitance by up to a factor of two. The surprisingly regular periods of the oscillations are of the order of 10 to 30 mV and scale linearly with the inverse of the thickness, between 60 and 150 nm, of the GaAs layer placed between the barrier and the p-doped AlGaAs. The oscillations are related to the resonant electron tunneling into high energy levels of this GaAs layer acting as a quantum well. We suggest that long lifetimes of the electrons in these levels are the origin of the large peak values of the capacitance. The possible relation of the capacitance oscillations with BEC is discussed.

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preprint2020arXiv

A novel planar back-gate design to control the carrier concentrations in GaAs-based double quantum wells

The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion implantation. This technique overcomes some common problems of the traditional design like the poor 2DEG mobility and leakage currents between the gate and the quantum well. Both bilayers with and without separate contacts have been prepared and tested. Tuning the electron density in one layer while keeping the second 2DEG at fixed density, one observes a dramatic increase of the carrier concentration. This tunneling resonance, which occurs at equal densities of both layers, demonstrates the separated contacts to each individual layer. In another sample with a smaller tunneling barrier and parallel contacted 2DEGs, the transition from a single 2DEG to a bilayer system is investigated at 50 mK in magnetic fields up to 12 T, showing the gate stability in high magnetic fields and very low temperatures. Transitions into an insulating (Wigner crystal) phase are observed in the individual layers in high fields at filling factors below 1/3. The absence of a fractional quantum Hall liquid at filling factor 1/5 in our structure seems to be a consequence of confining the electrons in quantum wells rather than at interfaces. The observed metal-insulator transitions appear to be nearly unaffected by the presence of the second layer separated by a barrier which is only 3 nm thick. We believe that this planar back-gate design holds great promise to produce controllable bilayers suitable to investigate the exotic (non-abelian) properties of correlated states.

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preprint2013arXiv

Anomalous resistance overshoot in the integer quantum Hall effect

In this work we report experiments on defined by shallow etching narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within the screening theory of the integer quantized Hall effect. We observe a non-monotonic increase of Hall resistance at the low magnetic field ends of the quantized plateaus, known as the overshoot effect. Unexpectedly, for Hall bars that are defined by shallow chemical etching the overshoot effect becomes more pronounced at elevated temperatures. We observe the overshoot effect at odd and even integer plateaus, which favor a spin independent explanation, in contrast to discussion in the literature. In a second set of the experiments, we investigate the overshoot effect in gate defined Hall bar and explicitly show that the amplitude of the overshoot effect can be directly controlled by gate voltages. We offer a comprehensive explanation based on scattering between evanescent incompressible channels.

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preprint2008arXiv

Antiphased Cyclotron-Magnetoplasma Mode in a Quantum Hall System

An antiphased magnetoplasma (MP) mode in a two-dimensional electron gas (2DEG) has been studied by means of inelastic light scattering (ILS) spectroscopy. Unlike the cophased MP mode it is purely quantum excitation which has no classic plasma analogue. It is found that zero momentum degeneracy for the antiphased and cophased modes predicted by the first-order perturbation approach in terms of the {\it e-e} interaction is lifted. The zero momentum energy gap is determined by a negative correlation shift of the antiphased mode. This shift, observed experimentally and calculated theoretically within the second-order perturbation approach, is proportional to the effective Rydberg constant in a semiconductor material.

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preprint2008arXiv

Cyclotron spin-flip excitations in a ν=1/3 quantum Hall ferromagnet

Inelastic light scattering spectroscopy around the ν=1/3 filling discloses a novel type of cyclotron spin-flip excitation in a quantum Hall system in addition to the excitations previously studied. The excitation energy of the observed mode follows qualitatively the degree of electron spin polarization, reaching a maximum value at ν=1/3 and thus characterizing it as a ν=1/3 ferromagnet eigenmode. Its absolute energy substantially exceeds the theoretical prediction obtained within the renowned single-mode approximation. Double-exciton corrections neglected utilizing the single-mode approach are evaluated within the framework of the excitonic representation and are inferred to be responsible for the observed effect.

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