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W. Dietsche

W. Dietsche appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-el

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Published work

13 published item(s)

preprint2021arXiv

Capacitance and conductance oscillations from electron tunneling into high energy levels of a quantum well in a p-i-n diode

Two-dimensional electron and hole gases separated by a few nm from each other are produced in p-i-n diodes based upon MBE-grown GaAs/AlGaAs heterostructures. At such interlayer distances, the exciton formation and possibly Bose-Einstein condensation (BEC) is expected. We measure the capacitance between the layers and find it to oscillate as a function of the bias voltage. The peak values exceed the geometric capacitance by up to a factor of two. The surprisingly regular periods of the oscillations are of the order of 10 to 30 mV and scale linearly with the inverse of the thickness, between 60 and 150 nm, of the GaAs layer placed between the barrier and the p-doped AlGaAs. The oscillations are related to the resonant electron tunneling into high energy levels of this GaAs layer acting as a quantum well. We suggest that long lifetimes of the electrons in these levels are the origin of the large peak values of the capacitance. The possible relation of the capacitance oscillations with BEC is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A novel planar back-gate design to control the carrier concentrations in GaAs-based double quantum wells

The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion implantation. This technique overcomes some common problems of the traditional design like the poor 2DEG mobility and leakage currents between the gate and the quantum well. Both bilayers with and without separate contacts have been prepared and tested. Tuning the electron density in one layer while keeping the second 2DEG at fixed density, one observes a dramatic increase of the carrier concentration. This tunneling resonance, which occurs at equal densities of both layers, demonstrates the separated contacts to each individual layer. In another sample with a smaller tunneling barrier and parallel contacted 2DEGs, the transition from a single 2DEG to a bilayer system is investigated at 50 mK in magnetic fields up to 12 T, showing the gate stability in high magnetic fields and very low temperatures. Transitions into an insulating (Wigner crystal) phase are observed in the individual layers in high fields at filling factors below 1/3. The absence of a fractional quantum Hall liquid at filling factor 1/5 in our structure seems to be a consequence of confining the electrons in quantum wells rather than at interfaces. The observed metal-insulator transitions appear to be nearly unaffected by the presence of the second layer separated by a barrier which is only 3 nm thick. We believe that this planar back-gate design holds great promise to produce controllable bilayers suitable to investigate the exotic (non-abelian) properties of correlated states.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nuclear magnetic resonance and nuclear spin relaxation in AlAs quantum well probed by ESR

The study of nuclear magnetic resonance and nuclear spin-lattice relaxation was conducted in an asymmetrically doped to $n\sim1.8\times10^{11}$ cm$^{-2}$ 16 nm AlAs quantum well grown in the $[001]$-direction. Dynamic polarization of nuclear spins due to the hyperfine interaction resulted in the so-called Overhauser shift of the two-dimensional conduction electron spin resonance. The maximum shifts achieved in the experiments are several orders of magnitude smaller than in GaAs-based heterostructures indicating that hyperfine interaction is weak. The nuclear spin-lattice relaxation time extracted from the decay of Overhauser shift over time turned out to depend on the filling factor of the two-dimensional electron system. This observation indicates that nuclear spin-lattice relaxation is mostly due to the interaction between electron and nuclear spins. Overhauser shift diminishes resonantly when the RF-radiation of certain frequencies was applied to the sample. This effect served as an indirect, yet powerful method for nuclear magnetic resonance detection: NMR quadrupole splitting of $^{75}$As nuclei was clearly resolved. Theoretical calculations performed describe well these experimental findings.

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preprint2016arXiv

Photoluminescence and the gallium problem for highest-mobility GaAs/AlGaAs-based 2d electron gases

The quest for extremely high mobilities of 2d electron gases in MBE-grown heterostructures is hampered by the available purity of the starting materials, particularly of the gallium. Here we compare the role of different Ga lots having nominally the highest possible quality on the mobility and the photoluminescence (PL) of modulation doped single interface structures and find significant differences. A weak exciton PL reveals that the purity of the Ga is insufficient. No high mobility can be reached with such a lot with a reasonable effort. On the other hand, a strong exciton PL indicates a high initial Ga purity, allowing to reach mobilities of 15 million (single interface) or 28 million $cm^2/Vsec$ (doped quantum wells) in our MBE systems. We discuss possible origins of the inconsistent Ga quality. Furthermore, we compare samples grown in different MBE systems over a period of several years and find that mobility and PL is correlated if similar structures and growth procedures are used.

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preprint2015arXiv

Acoustic Measurements of the Stripe and the Bubble Quantum Hall Phases

We launch surface acoustic waves (SAW) along both the $<110>$ and the $<1\bar{1}0>$ directions of a Hall bar and measure the anisotropic conductivity in a high purity GaAs 2-D electron system in the Quantum Hall regime of the stripe and the bubble phases. In the anisotropic stripe phase, SAW propagating along the "easy" $<110>$ direction sense a compressible behavior (finite resistance) which is seen in standard transport measurement only if current flows along the "hard" $<1\bar{1}0>$ direction. In the isotropic bubble phase, the SAW data show compressible behavior in both directions, in marked contrast to the incompressible quantum Hall behavior seen in transport measurements. These results challenge models that assume that both the stripe and the bubble phase consist of incompressible domains and raise important questions about the role of domain boundaries in SAW propagation.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetoplasma excitations of two-dimensional anisotropic heavy fermions in AlAs quantum wells

The spectra of plasma and magnetoplasma excitations in a two-dimensional system of anisotropic heavy fermions were investigated for the first time. The spectrum of microwave absorption by disk-like samples of stressed AlAs quantum wells at low electron densities showed two plasma resonances separated by a frequency gap. These two plasma resonances correspond to electron mass principle values of $(1.10 \pm 0.05) m_0$ and $(0.20 \pm 0.01) m_0$. The observed results correspond to the case of a single valley strongly anisotropic Fermi surface. It was established that electron density increase results in population of the second valley, manifesting itself as a drastic modification of the plasma spectrum. We directly determined the electron densities in each valley and the inter-valley splitting energy from the ratio of the two plasma frequencies.

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preprint2014arXiv

Detection of 2D electron g-factor sign inversion in narrow GaAs/AlGaAs quantum wells

By means of CW polarization-resolved photoluminescence spectroscopy we demonstrate the sign inversion of $g_z$-component of 2D electron g-factor with narrowing of a hosting GaAs/Al$_{0.33}$Ga$_{0.67}$As quantum well (QW). The energy splitting between spectral lines correspoding to recombination from the electron lowest Landau level and possessing opposite curcular polarization is analyzed. Due to exchange interaction, this value reveals maximum or minimum as a function of magnetic field strength in the vicinity of electron filling factor $ν=3$. The actual type of extremum depends on the electron $g_z$-component sign. The method allows to detect the sign inversion of electron Lande g-factor with its absolute value changing by less than $Δg \approx 0.06$. The reversal happens at a QW width of ($65\pm 3$ Å).

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anomalous resistance overshoot in the integer quantum Hall effect

In this work we report experiments on defined by shallow etching narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within the screening theory of the integer quantized Hall effect. We observe a non-monotonic increase of Hall resistance at the low magnetic field ends of the quantized plateaus, known as the overshoot effect. Unexpectedly, for Hall bars that are defined by shallow chemical etching the overshoot effect becomes more pronounced at elevated temperatures. We observe the overshoot effect at odd and even integer plateaus, which favor a spin independent explanation, in contrast to discussion in the literature. In a second set of the experiments, we investigate the overshoot effect in gate defined Hall bar and explicitly show that the amplitude of the overshoot effect can be directly controlled by gate voltages. We offer a comprehensive explanation based on scattering between evanescent incompressible channels.

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preprint2012arXiv

Coupling of Josephson Currents in Quantum Hall Bilayers

We study ring shaped (Corbino) devices made of bilayer two-dimensional electron gases in the total filling factor one quantized Hall phase which is considered to be a coherent BCS-like state of interlayer excitons. Identical Josephson currents are observed at the two edges while only a negligible conductance between them is found. The maximum Josephson current observed at either edge can be controlled by passing a second interlayer Josephson current at the other edge. Due to the large electric resistance between the two edges, the interaction between them can only be mediated by the neutral interlayer excitonic groundstate.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Extra Spin-Wave mode in Quantum Hall systems. Beyond the Skyrmion Limit

We report on the observation of a new spin mode in a quantum Hall system in the vicinity of odd electron filling factors under experimental conditions excluding the possibility of Skyrmion excitations. The new mode having presumably zero energy at odd filling factors emerges at small deviations from odd filling factors and couples to the spin-exciton. The existence of an extra spin mode assumes a nontrivial magnetic order at partial fillings of Landau levels surrounding quantum Hall ferromagnets other then the Skyrmion crystal.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Interlayer tunneling in counterflow experiments on the excitonic condensate in quantum Hall bilayers

The effect of tunneling on the transport properties of} quantum Hall double layers in the regime of the excitonic condensate at total filling factor one is studied in counterflow experiments. If the tunnel current $I$ is smaller than a critical $I_C$, tunneling is large and is effectively shorting the two layers. For $I > I_C$ tunneling becomes negligible. Surprisingly, the transition between the two tunneling regimes has only a minor impact on the features of the filling-factor one state as observed in magneto-transport, but at currents exceeding $I_C$ the resistance along the layers increases rapidly.

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preprint2008arXiv

Antiphased Cyclotron-Magnetoplasma Mode in a Quantum Hall System

An antiphased magnetoplasma (MP) mode in a two-dimensional electron gas (2DEG) has been studied by means of inelastic light scattering (ILS) spectroscopy. Unlike the cophased MP mode it is purely quantum excitation which has no classic plasma analogue. It is found that zero momentum degeneracy for the antiphased and cophased modes predicted by the first-order perturbation approach in terms of the {\it e-e} interaction is lifted. The zero momentum energy gap is determined by a negative correlation shift of the antiphased mode. This shift, observed experimentally and calculated theoretically within the second-order perturbation approach, is proportional to the effective Rydberg constant in a semiconductor material.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Cyclotron spin-flip excitations in a ν=1/3 quantum Hall ferromagnet

Inelastic light scattering spectroscopy around the ν=1/3 filling discloses a novel type of cyclotron spin-flip excitation in a quantum Hall system in addition to the excitations previously studied. The excitation energy of the observed mode follows qualitatively the degree of electron spin polarization, reaching a maximum value at ν=1/3 and thus characterizing it as a ν=1/3 ferromagnet eigenmode. Its absolute energy substantially exceeds the theoretical prediction obtained within the renowned single-mode approximation. Double-exciton corrections neglected utilizing the single-mode approach are evaluated within the framework of the excitonic representation and are inferred to be responsible for the observed effect.

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