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Source author record

D. V. Shovkun

D. V. Shovkun appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.supr-con

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Published work

8 published item(s)

preprint2016arXiv

Andreev reflection in s-type superconductor proximized 3D topological insulator

We investigate transport and shot noise in lateral N-TI-S contacts, where N is a normal metal, TI is a Bi-based three dimensional topological insulator (3D TI), and S is an s-type superconductor. In normal state, the devices are in the elastic diffusive transport regime, as demonstrated by a nearly universal value of the shot noise Fano factor $F_{\rm N}\approx1/3$ in magnetic field and in reference normal contact. In the absence of magnetic field, we identify the Andreev reflection (AR) regime, which gives rise to the effective charge doubling in shot noise measurements. Surprisingly, the Fano factor $F_{\rm AR}\approx0.22\pm0.02$ is considerably reduced in the AR regime compared to $F_{\rm N}$, in contrast to previous AR experiments in normal metals and semiconductors. We suggest that this effect is related to a finite thermal conduction of the proximized, superconducting TI owing to a residual density of states at low energies.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Local noise in a diffusive conductor

The control and measurement of local non-equilibrium configurations is of utmost importance in applications on energy harvesting, thermoelectrics and heat management in nano-electronics. This challenging task can be achieved with the help of various local probes, prominent examples including superconducting or quantum dot based tunnel junctions, classical and quantum resistors, and Raman thermography. Beyond time-averaged properties, valuable information can also be gained from spontaneous fluctuations of current (noise). From these perspective, however, a fundamental constraint is set by current conservation, which makes noise a characteristic of the whole conductor, rather than some part of it. Here we demonstrate how to remove this obstacle and pick up a local noise temperature of a current biased diffusive conductor with the help of a miniature noise probe. This approach is virtually noninvasive and extends primary local measurements towards strongly non-equilibrium regimes.

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preprint2016arXiv

Noise thermometry applied to thermoelectric measurements in InAs nanowires

We apply noise thermometry to characterize charge and thermoelectric transport in single InAs nanowires (NWs) at a bath temperature of 4.2 K. Shot noise measurements identify elastic diffusive transport in our NWs with negligible electron-phonon interaction. This enables us to set up a measurement of the diffusion thermopower. Unlike in previous approaches, we make use of a primary electronic noise thermometry to calibrate a thermal bias across the NW. In particular, this enables us to apply a contact heating scheme, which is much more efficient in creating the thermal bias as compared to conventional substrate heating. The measured thermoelectric Seebeck coefficient exhibits strong mesoscopic fluctuations in dependence on the back-gate voltage that is used to tune the NW carrier density. We analyze the transport and thermoelectric data in terms of approximate Mott's thermopower relation and to evaluate a gate-voltage to Fermi energy conversion factor.

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preprint2015arXiv

Shot noise of the edge transport in the inverted band HgTe quantum wells

We investigate the current noise in HgTe-based quantum wells with an inverted band structure in the regime of disordered edge transport. Consistent with previous experiments, the edge resistance strongly exceeds $h/e^2$ and weakly depends on the temperature. The shot noise is well below the Poissonian value and characterized by the Fano factor with gate voltage and sample to sample variations in the range $0.1<F<0.3$. Given the fact that our devices are shorter than the most pessimistic estimate of the ballistic dephasing length, these observations exclude the possibility of one-dimensional helical edge transport. Instead, we suggest that a disordered multi-mode conduction is responsible for the edge transport in our experiment.

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preprint2014arXiv

Nonlinear transport and noise thermometry in quasi-classical ballistic point contacts

We study nonlinear transport and non-equilibrium current noise in quasi-classical point contacts (PCs) defined in a low-density high-quality two-dimensional electron system in GaAs. At not too high bias voltages $V$ across the PC the noise temperature is determined by a Joule heat power and almost independent on the PC resistance that can be associated with a self-heating of the electronic system. This commonly accepted scenario breaks down at increasing $V$, where we observe extra noise accompanied by a strong decrease of the PC's differential resistance. The spectral density of the extra noise is roughly proportional to the nonlinear current contribution in the PC $δS\approx2F^*|eδI|\sim V^2$ with the effective Fano factor $F^*<1$, indicating that a random scattering process is involved. A small perpendicular magnetic field is found to suppress both $δI$ and $δS$. Our observations are consistent with a concept of a drag-like mechanism of the nonlinear transport mediated by electron-electron scattering in the leads of quasi-classical PCs.

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preprint2013arXiv

Finite-size effect in shot noise in hopping conduction

We study a current shot noise in a macroscopic insulator based on a two-dimensional electron system in GaAs in a variable range hopping (VRH) regime. At low temperature and in a sufficiently depleted sample a shot noise close to a full Poissonian value is measured. This suggests an observation of a finite-size effect in shot noise in the VRH conduction and demonstrates a possibility of accurate quasiparticle charge measurements in the insulating regime.

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preprint2010arXiv

Shot noise measurements in a wide-channel transistor near pinch-off

We study a shot noise of a wide channel gated high-frequency transistor at temperature of 4.2K near pinch-off. In this regime, a transition from the metallic to the insulating state is expected to occur, accompanied by the increase of the partition noise. The dependence of the noise spectral density on current is found to be slightly nonlinear. At low currents, the differential Fano factor is enhanced compared to the universal value 1/3 for metallic diffusive conductors. We explain this result by the effect of thermal fluctuations in a nonlinear regime near pinch-off, without calling for the enhanced partition noise.

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preprint2006arXiv

Observation of a Transition from BCS to HTSC-like Superconductivity in Ba_{1-x}K_xBiO_3 Single Crystals

A study of temperature dependences of the upper critical field B_{c2}(T) and surface impedance Z(T)=R(T)+iX(T) in Ba_{1-x}K_xBiO_3 single crystals that have transition temperatures in the range 6 < T_c < 32 K (roughly 0.6>x>0.4) reveals a transition from BCS to unusual type of superconductivity. B_{c2}(T) curves corresponding to the crystals that have T_c>20 K have positive curvature (like in some HTSC), and those of the crystals with T_c<15 K fall on the usual Werthamer-Helfand-Hohenberg curve. R(T) and X(T) dependences of the crystals with T_c~30 K and T_c~11 K are respectively linear (like in HTSC) and exponential (BCS) in the temperature range T << T_c. The experimental results are discussed in connection with the extended saddle point model by Abrikosov.

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