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B. Karmakar

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cond-mat.mes-hall cond-mat.str-el

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preprint2014arXiv

Electron-hole pairing in graphene-GaAs heterostructures

Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies of collective behavior driven by inter-layer Coulomb coupling. Here we report heterostructures comprising a single-layer (or bilayer) graphene carrying a fluid of massless (massive) chiral carriers, and a quantum well created in GaAs 31.5 nm below the surface, supporting a high-mobility two-dimensional electron gas. These are a new class of double-layer devices composed of spatially-separated electron and hole fluids. We find that the Coulomb drag resistivity significantly increases for temperatures below 5-10 K, following a logarithmic law. This anomalous behavior is a signature of the onset of strong inter-layer correlations, compatible with the formation of a condensate of permanent excitons. The ability to induce strongly-correlated electron-hole states paves the way for the realization of coherent circuits with minimal dissipation and nanodevices including analog-to-digital converters and topologically protected quantum bits.

preprint2014arXiv

Gap states controlled transmission through 1D Metal-Nanotube junction

Understanding the nature of metal/1D-semiconductor contacts such as metal/carbon nanotubes is a fundamental scientific and technological challenge for realizing high performance transistors\cite{Francois,Franklin}. A Schottky Barrier(SB) is usually formed at the interface of the $2D$ metal electrode with the $1D$ semiconducting carbon nanotube. As yet, experimental\cite{Appenzeller,Chen, Heinze, Derycke} and numerical \cite{Leonard, Jimenez} studies have generally failed\cite{Svensson} to come up with any functional relationship among the relevant variables affecting carrier transport across the SB owing to their unique geometries and complicated electrostatics. Here, we show that localized states called the metal induced gap states (MIGS)\cite{Tersoff,Leonard} already present in the barrier determines the transistor drain characteristics. These states seem to have little or no influence near the ON-state of the transistor but starts to affect the drain characteristics strongly as the OFF-state is approached. The role of MIGS is characterized by tracking the dynamics of the onset bias, $V_o$ of non-linear conduction in the drain characteristics with gate voltage $V_g$. We find that $V_o$ varies with the zero-bias conductance $G_o(V_g)$ for a gate bias $V_g$ as a power-law: $V_o$ $\sim $ ${G_o(V_g)}^x$ with an exponent $x$. The origin of this power-law relationship is tentatively suggested as a result of power-law variation of effective barrier height with $V_g$, corroborated by previous theoretical and experimental results\cite{Appenzeller}. The influence of MIGS states on transport is further verified independently by temperature dependent measurements. The unexpected scaling behavior seem to be very generic for metal/CNT contact providing an experimental forecast for designing state of the art CNT devices.

preprint2011arXiv

Two-dimensional Mott-Hubbard electrons in an artificial honeycomb lattice

Electrons in artificial lattices enable explorations of the impact of repulsive Coulomb interactions in a tunable system. We have trapped two-dimensional electrons belonging to a gallium arsenide quantum well in a nanofabricated lattice with honeycomb geometry. We probe the excitation spectrum in a magnetic field identifying novel collective modes that emerge from the Coulomb interaction in the artificial lattice as predicted by the Mott-Hubbard model. These observations allow us to determine the Hubbard gap and suggest the existence of a novel Coulomb-driven ground state. This approach offers new venues for the study of quantum phenomena in a controllable solid-state system.

preprint2010arXiv

Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice

We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions.