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V. Moshnyaga

V. Moshnyaga appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.mes-hall

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Published work

8 published item(s)

preprint2020arXiv

Strain-Driven Structure-Ferroelectricity Relationship in hexagonal TbMnO$_3$ Films

Thin films and heterostructures of hexagonal manganites as promising multiferroic materials have attracted a considerable interest recently. We report structural transformations of high quality epitaxial h-TMO/YSZ(111) films, analyzed by means of various characterization techniques. A phase transition from P63mc to P63mcm structure at TC~800 K was observed by temperature dependent Raman spectroscopy and optical ellipsometry. The latter probing directly electronic system, indicates its modification at the structural phase transition likely due to charge transfer from oxygen to Mn. In situ transmission electron microscopy (TEM) of the lamella samples displayed an irreversible P63mc-P63mcm transformation and vanishing of ferroelectric domains already at 410 K. After the temperature cycling (300K-1300K-300K) the room temperature TEM of h-TMO films revealed an inhomogeneous microstructure, containing ferroelectric and paraelectric nanodomains with P63mc and P63mcm structure, respectively. We point out a strong influence of stress relaxation, induced by temperature and by constrained sample geometry onto the structure and ferroelectricity in strain-stabilized h-TMO thin films.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magneto-dielectric Effect in Relaxor Dipolar Glassy Tb2CoMnO6 Film

We report magneto-dielectric properties of partially B-site ordered monoclinic Tb2CoMnO6 double perovskite thin film epitaxially grown by metalorganic aerosol deposition technique. Transmission electron microscopy and electron energy loss spectroscopy mapping shows the presence and distribution of both Co2+ and Co3+ ions in the film, evidencing a partial B-site disorder, which was further confirmed by the observation of reduced saturation magnetization at low temperatures. The ferromagnetic Curie temperature, TC=110 K, is slightly higher as compared to the bulk value (100 K) probably due to an in plane tensile strain. Remarkably, a short range ordering of spins at T*~190 K>>TC was established and assigned to the B-site disorder in the film. Two different dielectric relaxation peaks have been observed; they merge at the same temperature T* of short range spin correlations. Moreover, an unexpected high temperature dipolar relaxor-glass-like transition at T~T* was observed, at which a coupling to short range magnetic correlations results in a 4% magneto-dielectric coupling.

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preprint2013arXiv

Low-energy electronic properties of clean CaRuO$_3$: elusive Landau quasiparticles

We have prepared high-quality epitaxial thin films of CaRuO$_3$ with residual resistivity ratios up to 55. Shubnikov-de Haas oscillations in the magnetoresistance and a $T^2$ temperature dependence in the electrical resistivity only below 1.5 K, whose coefficient is substantially suppressed in large magnetic fields, establish CaRuO$_3$ as a Fermi liquid (FL) with anomalously low coherence scale. Non-Fermi liquid (NFL) $T^{3/2}$ dependence is found between 2 and 25 K. The high sample quality allows access to the intrinsic electronic properties via THz spectroscopy. For frequencies below 0.6 THz, the conductivity is Drude-like and can be modeled by FL concepts, while for higher frequencies non-Drude behavior, inconsistent with FL predictions, is found. This establishes CaRuO$_3$ as a prime example of optical NFL behavior in the THz range.

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preprint2010arXiv

Memristor Behaviour in Nano-Sized Vertical Lsmo/Lsmo Tunnel Junctions

We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS) resistance occurs at a bias field ~1 MV/cm. Applied electric field drops mostly at the insulating interfacial LSMO layer and couples to correlated polarons at the LSMO(111)/LSMO(111) vertical interfaces. The observed memristance behaviour has an electronic (polaronic) origin and is caused by an electric-field-controlled Jahn-Teller (JT) effect, followed by the orbital reconstruction and formation of a metastable orbitally disordered interfacial phase (LRS). Compared to the earlier reported ionic memristor in Ti-O films, an electronic (polaronic) nano-sized LSMO memristor shows an additional (re-entrant) LRS-HRS switching at higher fields because of the second minimum in the elastic energy of a JT system.

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preprint2010arXiv

Negative refraction in natural ferromagnetic metals

It is generally believed that Veselago's criterion for negative refraction cannot be fulfilled in natural materials. However, considering imaginary parts of the permittivity (ε) and permeability (μ) and for metals at not too high frequencies the general condition for negative refraction becomes extremely simple: Re(μ) < 0 --> Re(n) < 0. Here we demonstrate experimentally that in such natural metals as pure Co and FeCo alloy the negative values of the refractive index are achieved close to the frequency of the ferromagnetic resonance. Large values of the negative refraction can be obtained at room temperature and they can easily be tuned in moderate magnetic fields.

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preprint2009arXiv

Ferromagnetic quantum phase transition in Sr$_{1-x}$Ca$_x$RuO$_3$ thin films

The ferromagnetic quantum phase transition in the perovskite ruthenate Sr$_{1-x}$Ca$_x$RuO$_3$ is studied by low-temperature magnetization and electrical resistivity measurements on thin films. The films were grown epitaxially on SrTiO$_3$ substrates using metalorganic aerosol deposition and characterized by X-ray diffraction and room temperature scanning tunneling microscopy. High residual resistivity ratios of 29 and 16 for $x=0$ and $x=1$, respectively, prove the high quality of the investigated samples. We observe a continuous suppression of the ferromagnetic Curie temperature from $T_C=160$ K at $x=0$ towards $T_C\to 0$ at $x_c\approx 0.8$. The analysis of the electrical resistivity between 2 and 10 K reveals $T^2$ and $T^{3/2}$ behavior at $x\leq 0.6$ and $x\geq 0.7$, respectively. For undoped CaRuO$_3$, the measurement has been extended down to 60 mK, revealing a crossover to $T^2$ behavior around 2 K, which suggests a Fermi-liquid ground state in this system.

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preprint2009arXiv

Growth of Sr1-xCaxRuO3 thin films by metalorganic aerosol deposition

We report the growth of thin films of Sr1-xCaxRuO3 on SrTiO3 and MgO substrates by metalorganic aerosol deposition. The structure and microstructure is characterized by X-ray diffraction and room-temperature scanning tunnelling microscopy (STM), respectively. STM indicates in-plane epitaxy and a small surface roughness for films on SrTiO3. The high-quality of the films is supported by large residual resistivity ratios up to 29.

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preprint2009arXiv

Interface controlled electronic variations in correlated heterostructures

An interface modification of LCMO-BTO superlattices was found to massively influence magnetic and magnetotransport properties. Moreover it determines the crystal structure of the manganite layers, changing it from orthorhombic (Pnma) for the conventional superlattice (cSL), to rhombohedral (R-3c) for the modified one (mSL). While the cSL shows extremely nonlinear ac transport, the mSL is an electrically homogeneous material. The observations go beyond an oversimplified picture of dead interface layers and evidence the importance of electronic correlations at perovskite interfaces.

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