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Researcher profile

V. Moshnyaga

V. Moshnyaga contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.mes-hall

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Published work

5 published item(s)

preprint2020arXiv

Strain-Driven Structure-Ferroelectricity Relationship in hexagonal TbMnO$_3$ Films

Thin films and heterostructures of hexagonal manganites as promising multiferroic materials have attracted a considerable interest recently. We report structural transformations of high quality epitaxial h-TMO/YSZ(111) films, analyzed by means of various characterization techniques. A phase transition from P63mc to P63mcm structure at TC~800 K was observed by temperature dependent Raman spectroscopy and optical ellipsometry. The latter probing directly electronic system, indicates its modification at the structural phase transition likely due to charge transfer from oxygen to Mn. In situ transmission electron microscopy (TEM) of the lamella samples displayed an irreversible P63mc-P63mcm transformation and vanishing of ferroelectric domains already at 410 K. After the temperature cycling (300K-1300K-300K) the room temperature TEM of h-TMO films revealed an inhomogeneous microstructure, containing ferroelectric and paraelectric nanodomains with P63mc and P63mcm structure, respectively. We point out a strong influence of stress relaxation, induced by temperature and by constrained sample geometry onto the structure and ferroelectricity in strain-stabilized h-TMO thin films.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magneto-dielectric Effect in Relaxor Dipolar Glassy Tb2CoMnO6 Film

We report magneto-dielectric properties of partially B-site ordered monoclinic Tb2CoMnO6 double perovskite thin film epitaxially grown by metalorganic aerosol deposition technique. Transmission electron microscopy and electron energy loss spectroscopy mapping shows the presence and distribution of both Co2+ and Co3+ ions in the film, evidencing a partial B-site disorder, which was further confirmed by the observation of reduced saturation magnetization at low temperatures. The ferromagnetic Curie temperature, TC=110 K, is slightly higher as compared to the bulk value (100 K) probably due to an in plane tensile strain. Remarkably, a short range ordering of spins at T*~190 K>>TC was established and assigned to the B-site disorder in the film. Two different dielectric relaxation peaks have been observed; they merge at the same temperature T* of short range spin correlations. Moreover, an unexpected high temperature dipolar relaxor-glass-like transition at T~T* was observed, at which a coupling to short range magnetic correlations results in a 4% magneto-dielectric coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Memristor Behaviour in Nano-Sized Vertical Lsmo/Lsmo Tunnel Junctions

We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS) resistance occurs at a bias field ~1 MV/cm. Applied electric field drops mostly at the insulating interfacial LSMO layer and couples to correlated polarons at the LSMO(111)/LSMO(111) vertical interfaces. The observed memristance behaviour has an electronic (polaronic) origin and is caused by an electric-field-controlled Jahn-Teller (JT) effect, followed by the orbital reconstruction and formation of a metastable orbitally disordered interfacial phase (LRS). Compared to the earlier reported ionic memristor in Ti-O films, an electronic (polaronic) nano-sized LSMO memristor shows an additional (re-entrant) LRS-HRS switching at higher fields because of the second minimum in the elastic energy of a JT system.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Ferromagnetic quantum phase transition in Sr$_{1-x}$Ca$_x$RuO$_3$ thin films

The ferromagnetic quantum phase transition in the perovskite ruthenate Sr$_{1-x}$Ca$_x$RuO$_3$ is studied by low-temperature magnetization and electrical resistivity measurements on thin films. The films were grown epitaxially on SrTiO$_3$ substrates using metalorganic aerosol deposition and characterized by X-ray diffraction and room temperature scanning tunneling microscopy. High residual resistivity ratios of 29 and 16 for $x=0$ and $x=1$, respectively, prove the high quality of the investigated samples. We observe a continuous suppression of the ferromagnetic Curie temperature from $T_C=160$ K at $x=0$ towards $T_C\to 0$ at $x_c\approx 0.8$. The analysis of the electrical resistivity between 2 and 10 K reveals $T^2$ and $T^{3/2}$ behavior at $x\leq 0.6$ and $x\geq 0.7$, respectively. For undoped CaRuO$_3$, the measurement has been extended down to 60 mK, revealing a crossover to $T^2$ behavior around 2 K, which suggests a Fermi-liquid ground state in this system.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Growth of Sr1-xCaxRuO3 thin films by metalorganic aerosol deposition

We report the growth of thin films of Sr1-xCaxRuO3 on SrTiO3 and MgO substrates by metalorganic aerosol deposition. The structure and microstructure is characterized by X-ray diffraction and room-temperature scanning tunnelling microscopy (STM), respectively. STM indicates in-plane epitaxy and a small surface roughness for films on SrTiO3. The high-quality of the films is supported by large residual resistivity ratios up to 29.

0 citations0 reviewsNo code linkedOpen access