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Researcher profile

G. Van Tendeloo

G. Van Tendeloo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.supr-conphysics.ins-detphysics.optics

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Published work

12 published item(s)

preprint2015arXiv

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping

The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides11-15. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more than two orders of magnitude. Our in-situ and resonant x-ray spectroscopic in addition to transmission electron microscopy results indicate that the manganite layer undergoes unambiguous electronic reconstruction and leads to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas oscillations and the initial manifestation of the quantum Hall effect, demonstrating an unprecedented high-mobility and low electron density oxide 2DEG system. These findings open new avenues for oxide electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strain accommodation through facet matching in La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$/Nd$_\text{1.85}$Ce$_\text{0.15}$CuO$_\text{4}$ ramp-edge junctions

Scanning nano-focused X-ray diffraction (nXRD) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd$_\text{1.85}$Ce$_\text{0.15}$CuO$_\text{4}$ and superconducting hole-doped La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$ thin films, the latter being the top layer. On the ramp, a new growth mode of La$_\text{1.85}$Sr$_\text{0.15}$CuO$_\text{4}$ with a 3.3 degree tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Atomic resolution mapping of phonon excitations in STEM-EELS experiments

Atomically resolved electron energy-loss spectroscopy experiments are commonplace in modern aberrationcorrected transmission electron microscopes. Energy resolution has also been increasing steadily with the continuous improvement of electron monochromators. Electronic excitations however are known to be delocalised due to the long range interaction of the charged accelerated electrons with the electrons in a sample. This has made several scientists question the value of combined high spatial and energy resolution for mapping interband transitions and possibly phonon excitation in crystals. In this paper we demonstrate experimentally that atomic resolution information is indeed available at very low energy losses around 100 meV expressed as a modulation of the broadening of the zero loss peak. Careful data analysis allows us to get a glimpse of what are likely phonon excitations with both an energy loss and gain part. These experiments confirm recent theoretical predictions on the strong localisation of phonon excitations as opposed to electronic excitations and show that a combination of atomic resolution and recent developments in increased energy resolution will offer great benefit for mapping phonon modes in real space.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Atomic scale electron vortices for nanoresearch

Electron vortex beams were only recently discovered and their potential as a probe for magnetism in materials was shown. Here we demonstrate a new method to produce electron vortex beams with a diameter of less than 1.2 Å. This unique way to prepare free electrons to a state resembling atomic orbitals is fascinating from a fundamental physics point of view and opens the road for magnetic mapping with atomic resolution in an electron microscope.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Commensurate structural modulation in the charge- and orbitally-ordered phase of the quadruple perovskite (NaMn$_3$)Mn$_4$O$_{12}$

By means of synchrotron x-ray and electron diffraction, we studied the structural changes at the charge order transition $T_{CO}$=176 K in the mixed-valence quadruple perovskite (NaMn$_3$)Mn$_4$O$_{12}$. Below $T_{CO}$ we find satellite peaks indicating a commensurate structural modulation with the same propagation vector q =(1/2,0,-1/2) of the CE magnetic order that appears at low temperature, similarly to the case of simple perovskites like La$_{0.5}$Ca$_{0.5}$MnO$_3$. In the present case, the modulated structure together with the observation of a large entropy change at $T_{CO}$ gives evidence of a rare case of full Mn$^{3+}$/Mn$^{4+}$ charge and orbital order consistent with the Goodenough-Kanamori model.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Magnetic monopole field exposed by electrons

Magnetic monopoles have provided a rich field of study, leading to a wide area of research in particle physics, solid state physics, ultra-cold gases, superconductors, cosmology, and gauge theory. So far, no true magnetic monopoles were found experimentally. Using the Aharonov-Bohm effect, one of the central results of quantum physics, shows however, that an effective monopole field can be produced. Understanding the effects of such a monopole field on its surroundings is crucial to its observation and provides a better grasp of fundamental physical theory. We realize the diffraction of fast electrons at a magnetic monopole field generated by a nanoscopic magnetized ferromagnetic needle. Previous studies have been limited to theoretical semiclassical optical calculations of the motion of electrons in such a monopole field. Solid state systems like the recently studied 'spin ice' provide a constrained system to study similar fields, but make it impossible to separate the monopole from the material. Free space diffraction helps to understand the dynamics of the electron-monopole system without the complexity of a solid state system. The use of a simple object such as a magnetized needle will allow various areas of physics to use the general dynamical effects of monopole fields without requiring a monopole particle or specific solids which have internal monopole-like properties. The experiment performed here shows that even without a true magnetic monopole particle, the theoretical background on monopoles serves as a basis for experiments and can be applied to efficiently create electron vortices. Various predictions about angular momentum and general field effects can readily be studied using the available equipment. This realization provides insights for the scientific community on how to detect magnetic monopoles in high energy collisions, cosmological processes, or novel materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Defect engineering in oxide heterostructures by enhanced oxygen surface exchange

The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, we show that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3-SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. We propose that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thin films of the spin ice compound Ho2Ti2O7

The pyrochlore compounds Ho2Ti2O7 and Dy2Ti2O7 show an exotic form of magnetism called the spin ice state, resulting from the interplay between geometrical frustration and ferromagnetic coupling. A fascinating feature of this state is the appearance of magnetic monopoles as emergent excitations above the degenerate ground state. Over the past years, strong effort has been devoted to the investigation of these monopoles and other properties of the spin ice state in bulk crystals. A tantalising prospect is to incorporate spin ice materials into devices for spintronics and devices that can manipulate the magnetic monopoles. This would require the availability of spin ice thin films. Here, we report the fabrication of Ho2Ti2O7 thin films using pulsed laser deposition. These films not only show a high crystalline quality, but also exhibit the hallmarks of a spin ice: a pronounced magnetic anisotropy and an intermediate plateau in the magnetisation along the [111] crystal direction.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Memristor Behaviour in Nano-Sized Vertical Lsmo/Lsmo Tunnel Junctions

We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS) resistance occurs at a bias field ~1 MV/cm. Applied electric field drops mostly at the insulating interfacial LSMO layer and couples to correlated polarons at the LSMO(111)/LSMO(111) vertical interfaces. The observed memristance behaviour has an electronic (polaronic) origin and is caused by an electric-field-controlled Jahn-Teller (JT) effect, followed by the orbital reconstruction and formation of a metastable orbitally disordered interfacial phase (LRS). Compared to the earlier reported ionic memristor in Ti-O films, an electronic (polaronic) nano-sized LSMO memristor shows an additional (re-entrant) LRS-HRS switching at higher fields because of the second minimum in the elastic energy of a JT system.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Microstructure and interface studies of LaVO3/SrVO3 superlattices

The structure and interface characteristics of (LaVO3)6m(SrVO3)m superlattices deposited on (100)-SrTiO3 (STO) substrate were studied using Transmission Electron Microscopy (TEM). Cross-section TEM studies revealed that both LaVO3 (LVO) and SrVO3 (SVO) layers are good single crystal quality and epitaxially grown with respect to the substrate. It is evidenced that LVO layers are made of two orientational variants of a distorted perovskite compatible with bulk LaVO3 while SVO layers suffers from a tetragonal distortion due to the substrate induced stain. Electron Energy Loss Spectroscopy (EELS) investigations indicate changes in the fine structure of the V L23 edge, related to a valence change between the LaVO3 and SrVO3 layers.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Interface controlled electronic variations in correlated heterostructures

An interface modification of LCMO-BTO superlattices was found to massively influence magnetic and magnetotransport properties. Moreover it determines the crystal structure of the manganite layers, changing it from orthorhombic (Pnma) for the conventional superlattice (cSL), to rhombohedral (R-3c) for the modified one (mSL). While the cSL shows extremely nonlinear ac transport, the mSL is an electrically homogeneous material. The observations go beyond an oversimplified picture of dead interface layers and evidence the importance of electronic correlations at perovskite interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Electronically coupled complementary interfaces between perovskite band insulators

Perovskite oxides exhibit a plethora of exceptional electronic properties, providing the basis for novel concepts of oxide-electronic devices. The interest in these materials is even extended by the remarkable characteristics of their interfaces. Studies on single epitaxial connections between the two wide-bandgap insulators LaAlO3 and SrTiO3 have revealed them to be either high-mobility electron conductors or insulating, depending on the atomic stacking sequences. In the latter case they are conceivably positively charged. For device applications, as well as for basic understanding of the interface conduction mechanism, it is important to investigate the electronic coupling of closely-spaced complementary interfaces. Here we report the successful realization of such electronically coupled complementary interfaces in SrTiO3 - LaAlO3 thin film multilayer structures, in which the atomic stacking sequence at the interfaces was confirmed by quantitative transmission electron microscopy. We found a critical separation distance of 6 perovskite unit cell layers, corresponding to approximately 2.3 nm, below which a decrease of the interface conductivity and carrier density occurs. Interestingly, the high carrier mobilities characterizing the separate electron doped interfaces are found to be maintained in coupled structures down to sub-nanometer interface spacing.

0 citations0 reviewsNo code linkedOpen access