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Researcher profile

Tony F. Heinz

Tony F. Heinz contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.chem-phphysics.opticscond-mat.stat-mechcond-mat.str-elphysics.app-phquant-ph

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Published work

25 published item(s)

preprint2022arXiv

Atom-Specific Probing of Electron Dynamics in an Atomic Adsorbate by Time-Resolved X-ray Spectroscopy

The electronic excitation occurring on adsorbates at ultrafast time scales from optical lasers that initiate surface chemical reactions is still an open question. Here, we report the ultrafast temporal evolution of X-ray absorption spectroscopy (XAS) and X-ray emission spectroscopy (XES) of a simple well known adsorbate prototype system, namely carbon (C) atoms adsorbed on a nickel (Ni(100)) surface, following intense laser optical pumping at 400 nm. We observe ultrafast (~100 fs) changes in both XAS and XES showing clear signatures of the formation of a hot electron-hole pair distribution on the adsorbate. This is followed by slower changes on a few ps time scale, shown to be consistent with thermalization of the complete C/Ni system. Density functional theory spectrum simulations support this interpretation.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Ultrahigh quality infrared polaritonic resonators based on bottom-up-synthesized van der Waals nanoribbons

van der Waals nanomaterials supporting phonon polariton quasiparticles possess unprecedented light confinement capabilities, making them ideal systems for molecular sensing, thermal emission, and subwavelength imaging applications, but they require defect-free crystallinity and nanostructured form factors to fully showcase these capabilities. We introduce bottom-up-synthesized α-MoO3 structures as nanoscale phonon polaritonic systems that feature tailorable morphologies and crystal qualities consistent with bulk single crystals. α-MoO3 nanoribbons serve as low-loss hyperbolic Fabry-Pérot nanoresonators, and we experimentally map hyperbolic resonances over four Reststrahlen bands spanning the far- and mid-infrared spectral range, including resonance modes beyond the tenth order. The measured quality factors are the highest from phonon polaritonic van der Waals structures to date. We anticipate that bottom-up-synthesized polaritonic van der Waals nanostructures will serve as an enabling high-performance and low-loss platform for infrared optical and optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Valley-coherent quantum anomalous Hall state in AB-stacked MoTe2/WSe2 bilayers

Moiré materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct manifestation of the intrinsic topological properties of a material and an appealing attribute for low-power electronics applications. The QAH effect has been observed in both graphene and transition metal dichalcogenide (TMD) moiré materials. It is thought to arise from the interaction-driven valley polarization of the narrow moiré bands. Here, we show surprisingly that the newly discovered QAH state in AB-stacked MoTe2/WSe2 moiré bilayers is not valley-polarized but valley-coherent. The layer- and helicity-resolved optical spectroscopy measurement reveals that the QAH ground state possesses spontaneous spin (valley) polarization aligned (anti-aligned) in two TMD layers. In addition, saturation of the out-of-plane spin polarization in both layers occurs only under high magnetic fields, supporting a canted spin texture. Our results call for a new mechanism for the QAH effect and highlight the potential of TMD moiré materials with strong electronic correlations and spin-orbit interactions for exotic topological states.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

All-optical probe of three-dimensional topological insulators based on high-harmonic generation by circularly-polarized laser fields

We report the observation of a novel nonlinear optical response from the prototypical three-dimensional topological insulator Bi$_2$Se$_3$ through the process of high-order harmonic generation. We find that the generation efficiency increases as the laser polarization is changed from linear to elliptical, and it becomes maximum for circular polarization. With the aid of a microscopic theory and a detailed analysis of the measured spectra, we reveal that such anomalous enhancement encodes the characteristic topology of the band structure that originates from the interplay of strong spin-orbit coupling and time-reversal symmetry protection. Our study reveals a new platform for chiral strong-field physics and presents a novel, contact-free, all-optical approach for the spectroscopy of topological insulators. The implications are in ultrafast probing of topological phase transitions, light-field driven dissipationless electronics, and quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Temperature Dependent Thermal Boundary Conductance of Monolayer MoS$_2$ by Raman Thermometry

The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS$_2$ with AlN and SiO$_2$, using Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in such experiments, which we characterize here for the first time above room temperature. We obtain TBC ~ 15 MWm$^-$$^2$K$^-$$^1$ near room temperature, increasing as ~ T$^0$$^.$$^6$$^5$ in the range 300 - 600 K. The similar TBC of MoS$_2$ with the two substrates indicates that MoS$_2$ is the "softer" material with weaker phonon irradiance, and the relatively low TBC signifies that such interfaces present a key bottleneck in energy dissipation from 2D devices. Our approach is needed to correctly perform Raman thermometry of 2D materials, and our findings are key for understanding energy coupling at the nanoscale.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Enhanced nonlinear interaction of polaritons via excitonic Rydberg states in monolayer WSe2

Strong optical nonlinearities play a central role in realizing quantum photonic technologies. In solid state systems, exciton-polaritons, which result from the hybridization of material excitations and cavity photons, are an attractive candidate to realize such nonlinearities. Here, the interaction between excitons forms the basis of the polaritonic nonlinearity. While the interaction between ground state excitons generates a notable optical nonlinearity, the strength of such ground state interactions is generally not sufficient to reach the regime of quantum nonlinear optics and strong single-polariton interactions. Excited states, however, feature enhanced interactions and therefore hold promise for accessing the quantum domain of single-photon nonlinearities, as demonstrated with high-lying Rydberg states of cold atomic systems. Excitons in excited states have recently been observed in monolayer transition metal dichalcogenides. Here we demonstrate the formation of exciton-polaritons using the first excited excitonic state in monolayer tungsten diselenide (WSe2) embedded in a microcavity. Owing to the larger exciton size compared to their ground state counterpart, the realized polaritons exhibit an enhanced nonlinear response by more than an order of magnitude, as evidenced through a modification of the cavity Rabi splitting. The demonstration of excited exciton-polaritons in two-dimensional semiconductors and their enhanced nonlinear response presents the first step towards the generation of strong photon interactions in solid state systems, a necessary building block for quantum photonic technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated cathodoluminescence, photoluminescence, and strain mapping

Single photon emitters (SPEs) in solids have emerged as promising candidates for quantum photonic sensing, communications, and computing. Defects in hexagonal boron nitride (hBN) exhibit high-brightness, room-temperature quantum emission, but their large spectral variability and unknown local structure significantly challenge their technological utility. Here, we directly correlate hBN quantum emission with the material's local strain using a combination of photoluminescence (PL), cathodoluminescence (CL) and nano-beam electron diffraction. Across 40 emitters and 15 samples, we observe zero phonon lines(ZPLs) in PL and CL ranging from 540-720 nm. CL mapping reveals that multiple defects and distinct defect species located within an optically-diffraction-limited region can each contribute to the observed PL spectra. Local strain maps indicate that strain is not required to activate the emitters and is not solely responsible for the observed ZPL spectral range. Instead, four distinct defect classes are responsible for the observed emission range. One defect class has ZPLs near 615 nm with predominantly matched CL-PL responses; it is not a strain-tuned version of another defect class with ZPL emission centered at 580 nm. A third defect class at 650 nm has low visible-frequency CL emission; and a fourth defect species centered at 705 nm has a small, ~10 nm shift between its CL and PL peaks. All studied defects are stable upon both electron and optical irradiation. Our results provide an important foundation for atomic-scale optical characterization of color centers, as well as a foundation for engineering defects with precise emission properties.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Competing thermodynamic and dynamic factors select molecular assemblies on a gold surface

Controlling the self-assembly of surface-adsorbed molecules into nanostructures requires understanding physical mechanisms that act across multiple length and time scales. By combining scanning tunneling microscopy with hierarchical ab initio and statistical mechanical modeling of 1,4-substituted benzenediamine (BDA) molecules adsorbed on a gold (111) surface, we demonstrate that apparently simple nanostructures are selected by a subtle competition of thermodynamics and dynamics. Of the collection of possible BDA nanostructures mechanically stabilized by hydrogen bonding, the interplay of intermolecular forces, surface modulation, and assembly dynamics select at low temperature a particular subset: low free energy oriented linear chains of monomers, and high free energy branched chains.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide

Recent progress in large-area synthesis of monolayer molybdenum disulfide, a new two-dimensional direct-bandgap semiconductor, is paving the way for applications in atomically thin electronics. Little is known, however, about the microstructure of this material. Here we have refined chemical vapor deposition synthesis to grow highly crystalline islands of monolayer molybdenum disulfide up to 120 um in size with optical and electrical properties comparable or superior to exfoliated samples. Using transmission electron microscopy, we correlate lattice orientation, edge morphology, and crystallinity with island shape to demonstrate that triangular islands are single crystals. The crystals merge to form faceted tilt and mirror boundaries that are stitched together by lines of 8- and 4- membered rings. Density functional theory reveals localized mid-gap states arising from these 8-4 defects. We find that mirror boundaries cause strong photoluminescence quenching while tilt boundaries cause strong enhancement. In contrast, the boundaries only slightly increase the measured in-plane electrical conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Intrinsic lineshape of the Raman 2D-mode in freestanding graphene monolayers

We report a comprehensive study of the two-phonon inter-valley (2D) Raman mode in graphene monolayers, motivated by recent reports of asymmetric 2D-mode lineshapes in freestanding graphene. For photon energies in the range $1.53 \rm eV - 2.71 \rm eV$, the 2D-mode Raman response of freestanding samples appears as bimodal, in stark contrast with the Lorentzian approximation that is commonly used for supported monolayers. The transition between the freestanding and supported cases is mimicked by electrostatically doping freestanding graphene at carrier densities above $2\times 10^{11} \rm cm^{-2}$. This result quantitatively demonstrates that low levels of charging can obscure the intrinsically bimodal 2D-mode lineshape of monolayer graphene, which can be utilized as a signature of a quasi-neutral sample. In pristine freestanding graphene, we observe a broadening of the 2D-mode feature with decreasing photon energy that cannot be rationalized using a simple one-dimensional model based on resonant \textit{inner} and \textit{outer} processes. This indicates that phonon wavevectors away from the high-symmetry lines of the Brillouin zone must contribute to the 2D-mode, so that a full two-dimensional calculation is required to properly describe multiphonon-resonant Raman processes.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tunable Infrared Phonon Anomalies in Trilayer Graphene

Trilayer graphene in both ABA (Bernal) and ABC (rhombohedral) stacking sequences is shown to exhibit intense infrared absorption from in-plane optical phonons. The feature, lying at ~1580 cm-1, changes strongly with electrostatic gating. For ABC-stacked graphene trilayers, we observed a large enhancement in phonon absorption amplitude, as well as softening of the phonon mode, as the Fermi level is tuned away from charge neutrality. A similar, but substantially weaker effect is seen in samples with the more common ABA stacking order. The strong infrared response of the optical phonons and the pronounced variation with electrostatic gating and stacking-order reflect the interactions of the phonons and electronic excitations in the two systems. The key experimental findings can be reproduced within a simplified charged-phonon model that considers the influence of charging through Pauli blocking of the electronic transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Observation of out-of-plane vibrations in few-layer graphene

We report the observation of layer breathing mode (LBM) vibrations in few-layer graphene (FLG) samples of thickness from 2 to 6 layers, exhibiting both Bernal (AB) and rhombohedral (ABC) stacking order. The LBM vibrations are identified using a Raman combination band lying around 1720 cm-1. From double resonance theory, we identify the feature as the LOZO' combination mode of the out-of-plane LBM (ZO') and the in-plane longitudinal optical mode (LO). The LOZO' Raman band is found to exhibit multiple peaks, with a unique line shape for each layer thickness and stacking order. These complex line shapes of the LOZO'-mode arise both from the material-dependent selection of different phonons in the double-resonance Raman process and from the detailed structure of the different branches of LBM in FLG.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Observation of an electrically tunable band gap in trilayer graphene

A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field. Thicker graphene layers are also highly attractive materials. The ability to produce a band gap in these systems is of great fundamental and practical interest. Both experimental and theoretical investigations of graphene trilayers with the typical ABA layer stacking have, however, revealed the lack of any appreciable induced gap. Here we contrast this behavior with that exhibited by graphene trilayers with ABC crystallographic stacking. The symmetry of this structure is similar to that of AB stacked graphene bilayers and, as shown by infrared conductivity measurements, permits a large band gap to be formed by an applied electric field. Our results demonstrate the critical and hitherto neglected role of the crystallographic stacking sequence on the induction of a band gap in few-layer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Observation of Electronic Raman Scattering in Metallic Carbon Nanotubes

We present experimental measurements of the electronic contribution to the Raman spectra of individual metallic single-walled carbon nanotubes (MSWNTs). Photoexcited carriers are inelastically scattered by a continuum of low-energy electron-hole pairs created across the graphenelike linear electronic subbands of the MSWNTs. The optical resonances in MSWNTs give rise to well-defined electronic Raman peaks. This resonant electronic Raman scattering is a unique feature of the electronic structure of these one-dimensional quasimetals.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Observation of Intra- and Inter-band Transitions in the Optical Response of Graphene

The optical conductivity of freely suspended graphene was examined under non-equilibrium conditions using femtosecond pump-probe spectroscopy. We observed a conductivity transient that varied strongly with the electronic temperature, exhibiting a crossover from enhanced to decreased absorbance with increasing pump fluence. The response arises from a combination of bleaching of the inter-band transitions by Pauli blocking and induced absorption from the intra-band transitions of the carriers. The latter dominates at low electronic temperature, but, despite an increase in Drude scattering rate, is overwhelmed by the former at high electronic temperature. The time-evolution of the optical conductivity in all regimes can described in terms of a time-varying electronic temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Temperature dependence of the anharmonic decay of optical phonons in carbon nanotubes and graphite

We report on the temperature dependence of the anharmonic decay rate of zone-center (G mode) optical phonons in both single-walled carbon nanotubes and graphite. The measurements are performed using a pump-probe Raman scattering scheme with femtosecond laser pulses. For nanotubes, measured over a temperature range of 6 K-700 K, we observe little temperature dependence of the decay rate below room temperature. Above 300 K, the decay rate increases from 0.8 to 1.7 ps-1. The decay rates observed for graphite range from 0.5 to 0.8 ps-1 for temperatures from 300 K-700 K. We compare the behavior observed in carbon nanotubes and graphite and discuss the implications of our results for the mechanism of the anharmonic decay of optical phonons in both systems.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Visualizing Individual Nitrogen Dopants in Monolayer Graphene

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Anomalous Lattice Vibrations of Single and Few-Layer MoS2

Molybdenum disulfide (MoS2) of single and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic-force microscopy. Two Raman modes, E12g and A1g, exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the 3-dimensional to the 2-dimensional regime.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Energy Transfer from Individual Semiconductor Nanocrystals to Graphene

Energy transfer from photoexcited zero-dimensional systems to metallic systems plays a prominent role in modern day materials science. A situation of particular interest concerns the interaction between a photoexcited dipole and an atomically thin metal. The recent discovery of graphene layers permits investigation of this phenomenon. Here we report a study of fluorescence from individual CdSe/ZnS nanocrystals in contact with single- and few-layer graphene sheets. The rate of energy transfer is determined from the strong quenching of the nanocrystal fluorescence. For single-layer graphene, we find a rate of ~ 4ns-1, in agreement with a model based on the dipole approximation and a tight-binding description of graphene. This rate increases significantly with the number of graphene layers, before approaching the bulk limit. Our study quantifies energy transfer to and fluorescence quenching by graphene, critical properties for novel applications in photovoltaic devices and as a molecular ruler.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Excitons and high-order optical transitions in individual carbon nanotubes

We examine the excitonic nature of high-lying optical transitions in single-walled carbon nanotubes by means of Rayleigh scattering spectroscopy. A careful analysis of the principal transitions of individual semiconducting and metallic nanotubes reveals that in both cases the lineshape is consistent with an excitonic model, but not one of free-carriers. For semiconducting species, side-bands are observed at ~200 meV above the third and fourth optical transitions. These features are ascribed to exciton-phonon bound states. Such side-bands are not apparent for metallic nanotubes,as expected from the reduced strength of excitonic interactions in these systems.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Imaging Stacking Order in Few-Layer Graphene

Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the electronic properties of FLG. We demonstrate an accurate and efficient method to characterize stacking order in FLG using the distinctive features of the Raman 2D-mode. Raman imaging allows us to visualize directly the spatial distribution of Bernal (ABA) and rhombohedral (ABC) stacking in tri- and tetra-layer graphene. We find that 15% of exfoliated graphene tri- and tetra-layers is comprised of micron-sized domains of rhombohedral stacking, rather than of usual Bernal stacking. These domains are stable and remain unchanged for temperatures exceeding $800^{\circ}$C.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermal conductance at the graphene-SiO2 interface measured by optical pump-probe spectroscopy

We have examined the interfacial thermal conductance σint of single and multi-layer graphene samples prepared on fused SiO2 substrates by mechanical exfoliation of graphite. By using an ultrafast optical pump pulse and monitoring the transient reflectivity on the picosecond time scale, we obtained an average σint of 5,000 W/cm2K for the graphene-SiO2 system. We observed significant variation in σint between individual samples, but found no systematic dependence on the thickness of the graphene layers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Ultrafast Photoluminescence from Graphene

Since graphene has no band gap, photoluminescence is not expected from relaxed charge carriers. We have, however, observed significant light emission from graphene under excitation by ultrashort (30-fs) laser pulses. Light emission was found to occur across the visible spectral range (1.7 - 3.5 eV), with emitted photon energies exceeding that of the excitation laser (1.5 eV). The emission exhibits a nonlinear dependence on the laser fluence. In two-pulse correlation measurements of the time-domain response, a dominant relaxation time of tens of femtoseconds is observed. A two-temperature model describing the electrons and their interaction with strongly coupled optical phonons can account for the experimental observations.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Reversible Basal Plane Hydrogenation of Graphene

We report the chemical reaction of single-layer graphene with hydrogen atoms, generated in situ by electron-induced dissociation of hydrogen silsesquioxane (HSQ). Hydrogenation, forming sp3 C-H functionality on the basal plane of graphene, proceeds at a higher rate for single than for double layers, demonstrating the enhanced chemical reactivity of single sheet graphene. The net H atom sticking probability on single layers at 300 K is at least 0.03, which exceeds that of double layers by at least a factor of 15. Chemisorbed hydrogen atoms, which give rise to a prominent Raman D band, can be detached by thermal annealing at 100~200 degrees C. The resulting dehydrogenated graphene is "activated" when photothermally heated it reversibly binds ambient oxygen, leading to hole doping of the graphene. This functionalization of graphene can be exploited to manipulate electronic and charge transport properties of graphene devices.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Variable Electron-Phonon Coupling in Isolated Metallic Carbon Nanotubes Observed by Raman Scattering

We report the existence of broad and weakly asymmetric features in the high-energy (G) Raman modes of freely suspended metallic carbon nanotubes of defined chiral index. A significant variation in peak width (from 12 cm-1 to 110 cm-1) is observed as a function of the nanotube's chiral structure. When the nanotubes are electrostatically gated, the peak widths decrease. The broadness of the Raman features is understood as the consequence of coupling of the phonon to electron-hole pairs, the strength of which varies with the nanotube chiral index and the position of the Fermi energy.

0 citations0 reviewsNo code linkedOpen access