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Kin Fai Mak

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Published work

35 published item(s)

preprint2022arXiv

Dielectric catastrophe at the Mott and Wigner transitions in a moiré superlattice

The metal-insulator transition (MIT) driven by electronic correlations is a fundamental and challenging problem in condensed-matter physics. Particularly, whether such a transition can be continuous remains open. The emergence of semiconducting moiré materials with continuously tunable bandwidth provides an ideal platform to study interaction-driven MITs. Although a bandwidth-tuned MIT at fixed full electron filling of the moiré superlattice has been reported recently, that at fractional filling, which involves translational symmetry breaking of the underlying superlattice, remains elusive. Here, we demonstrate bandwidth-tuned MITs in a MoSe2/WS2 moiré superlattice at both integer and fractional fillings using the exciton sensing technique. The bandwidth is controlled by an out-of-plane electric field. The dielectric response is probed optically with the 2s exciton in a remote WSe2 sensor layer. The exciton spectral weight is negligible for the metallic state, consistent with a large negative dielectric constant. It continuously vanishes when the transition is approached from the insulating side, corresponding to a diverging dielectric constant or a "dielectric catastrophe". Our results support continuous interaction-driven MITs in a two-dimensional triangular lattice and stimulate future explorations of exotic quantum phases, such as quantum spin liquids, in their vicinities.

preprint2022arXiv

Realization of the Haldane Chern insulator in a moiré lattice

The Chern insulator displays a quantized Hall effect without Landau levels. In a landmark paper in 1988, Haldane showed that a Chern insulator could be realized through complex next-nearest-neighbor hopping in a honeycomb lattice. Despite its profound impact on the field of topological physics and recent implementation in cold-atom experiments, the Haldane model has remained elusive in solid-state materials. Here, we report the experimental realization of a Haldane Chern insulator in AB-stacked MoTe2/WSe2 moiré bilayers, which form a honeycomb moiré lattice with two sublattices residing in different layers. We show that the moiré bilayer filled with two charge particles per unit cell is a quantum spin Hall (QSH) insulator with a tunable charge gap. Under a small out-of-plane magnetic field, it becomes a Chern insulator with Chern number c=1 from magneto-transport studies. The results are qualitatively captured by a generalized Kane-Mele tight-binding Hamiltonian. The Zeeman field splits the QSH insulator into two halves of opposite valley--one with a positive and the other a negative moiré band gap. Our study highlights the unique potential of semiconductor moiré materials in engineering topological lattice Hamiltonians.

preprint2022arXiv

Switchable moiré potentials in ferroelectric WTe2/WSe2 superlattices

Moiré materials, with superlattice periodicity many times the atomic length scale, have enabled the studies of strong electronic correlations and band topology with unprecedented tunability. However, nonvolatile control of the moiré potentials, which could allow on-demand switching of the superlattice effects, has not been achieved to date. Here we demonstrate the switching of the correlated and moiré band insulating states and the associated nonlinear anomalous Hall effect by the ferroelectric effect. This is achieved in a ferroelectric WTe2 bilayer of the Td structure with a centered-rectangular moiré superlattice induced by interfacing with a WSe2 monolayer of the H structure. The results can be understood in terms of polarization-dependent charge transfer between two WTe2 monolayers, which possess very different moiré potential depths; ferroelectric switching thus turns on/off the superlattice. Our study demonstrates the potential of creating new functional moiré materials by incorporating intrinsic symmetry-breaking orders.

preprint2022arXiv

Valley-coherent quantum anomalous Hall state in AB-stacked MoTe2/WSe2 bilayers

Moiré materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct manifestation of the intrinsic topological properties of a material and an appealing attribute for low-power electronics applications. The QAH effect has been observed in both graphene and transition metal dichalcogenide (TMD) moiré materials. It is thought to arise from the interaction-driven valley polarization of the narrow moiré bands. Here, we show surprisingly that the newly discovered QAH state in AB-stacked MoTe2/WSe2 moiré bilayers is not valley-polarized but valley-coherent. The layer- and helicity-resolved optical spectroscopy measurement reveals that the QAH ground state possesses spontaneous spin (valley) polarization aligned (anti-aligned) in two TMD layers. In addition, saturation of the out-of-plane spin polarization in both layers occurs only under high magnetic fields, supporting a canted spin texture. Our results call for a new mechanism for the QAH effect and highlight the potential of TMD moiré materials with strong electronic correlations and spin-orbit interactions for exotic topological states.

preprint2022arXiv

Valley-Polarized Quantum Anomalous Hall State in Moiré MoTe$_2$/WSe$_2$ Heterobilayers

Moiré heterobilayer transition metal dichalcogenides (TMDs) emerge as an ideal system for simulating the single-band Hubbard model and interesting correlated phases have been observed in these systems. Nevertheless, the moiré bands in heterobilayer TMDs were believed to be topologically trivial. Recently, it was reported that both a quantum valley Hall insulating state at filling $ν=2$ (two holes per moiré unit cell) and a valley-polarized quantum anomalous Hall state at filling $ν=1$ were observed in AB stacked moiré MoTe$_2$/WSe$_2$ heterobilayers. However, how the topologically nontrivial states emerge is not known. In this work, we propose that the pseudo-magnetic fields induced by lattice relaxation in moiré MoTe$_2$/WSe$_2$ heterobilayers could naturally give rise to moiré bands with finite Chern numbers. We show that a time-reversal invariant quantum valley Hall insulator is formed at full-filing $ν=2$, when two moiré bands with opposite Chern numbers are filled. At half-filling $ν=1$, Coulomb interaction lifts the valley degeneracy and results in a valley-polarized quantum anomalous Hall state, as observed in the experiment. Our theory identifies a new way to achieve topologically non-trivial states in heterobilayer TMD materials.

preprint2022arXiv

Van der Waals pi Josephson junctions

Proximity-induced superconductivity in a ferromagnet can induce Cooper pairs with a finite center-of-mass momentum. The resultant spatially modulated superconducting order parameter is able to stabilize Josephson junctions (JJs) with pi phase difference in superconductor-ferromagnet heterostructures and realize 'quiet' phase qubits. The emergence of two-dimensional (2D) layered superconducting and magnetic materials promises a new platform for realizing pi JJs with atomically sharp interfaces by van der Waals stacking. Here we demonstrate a thickness-driven 0-pi transition in JJs made of NbSe2 (an Ising superconductor) with a Cr2Ge2Te6 (a ferromagnetic semiconductor) weak link. By systematically varying the Cr2Ge2Te6 thickness, we observe a vanishing supercurrent at a critical thickness around 8 nm, followed by a re-entrant supercurrent upon further increase in thickness. Near the critical thickness, we further observe unusual supercurrent interference patterns with vanishing critical current around zero in-plane magnetic field. They signify the formation of 0-pi JJs (with both 0 and pi regions) likely induced by the nanoscale magnetic domains in Cr2Ge2Te6. Our work highlights the potential of van der Waals superconductor-ferromagnet heterostructures for the explorations of unconventional superconductivity and superconducting electronics.

preprint2021arXiv

Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions

Superconductivity and magnetism are generally incompatible because of the opposing requirement on electron spin alignment. When combined, they produce a multitude of fascinating phenomena, including unconventional superconductivity and topological superconductivity. The emergence of two-dimensional (2D)layered superconducting and magnetic materials that can form nanoscale junctions with atomically sharp interfaces presents an ideal laboratory to explore new phenomena from coexisting superconductivity and magnetic ordering. Here we report tunneling spectroscopy under an in-plane magnetic field of superconductor-ferromagnet-superconductor (S/F/S) tunnel junctions that are made of 2D Ising superconductor NbSe2 and ferromagnetic insulator CrBr3. We observe nearly 100% tunneling anisotropic magnetoresistance (AMR), that is, difference in tunnel resistance upon changing magnetization direction from out-of-plane to inplane. The giant tunneling AMR is induced by superconductivity, particularly, a result of interfacial magnetic exchange coupling and spin-dependent quasiparticle scattering. We also observe an intriguing magnetic hysteresis effect in superconducting gap energy and quasiparticle scattering rate with a critical temperature that is 2 K below the superconducting transition temperature. Our study paves the path for exploring superconducting spintronic and unconventional superconductivity in van der Waals heterostructures.

preprint2020arXiv

Gate-tunable spin waves in antiferromagnetic atomic bilayers

The emergence of two-dimensional (2D) layered magnetic materials has opened an exciting playground for both fundamental studies of magnetism in 2D and explorations of spinbased applications. Remarkable properties, including spin filtering in magnetic tunnel junctions and gate control of magnetic states, have recently been demonstrated in 2D magnetic materials. While these studies focus on the static properties, dynamic magnetic properties such as excitation and control of spin waves have remained elusive. Here we excite spin waves and probe their dynamics in antiferromagnetic CrI3 bilayers by employing an ultrafast optical pump/magneto-optical Kerr probe technique. We identify sub-terahertz magnetic resonances under an in-plane magnetic field, from which we determine the anisotropy and interlayer exchange fields and the spin damping rates. We further show tuning of antiferromagnetic resonances by tens of gigahertz through electrostatic gating. Our results shed light on magnetic excitations and spin dynamics in 2D magnetic materials, and demonstrate their unique potential for applications in ultrafast data storage and processing.

preprint2020arXiv

Spatially mixed moiré excitons in two-dimensional van der Waals superlattices

Moiré superlattices open an unprecedented opportunity for tailoring interactions between quantum particles and their coupling to electromagnetic fields. Strong superlattice potential generates moiré minibands of excitons -- bound pairs of electrons and holes that reside either in a single layer (intralayer excitons) or two separate layers (interlayer excitons). The twist-angle-controlled interlayer hybridization of carriers can also mix the two types of excitons to combine the strengths of both. Here, we report a direct observation of spatially mixed moiré excitons in angle-aligned WSe2/WS2 and MoSe2/WS2 superlattices by optical reflectance spectroscopy. The strongly interacting interlayer and intralayer moiré excitons in WSe2/WS2 manifest energy level anticrossing and oscillator strength redistribution under a vertical electric field. We also observe doping-dependent exciton miniband renormalization and mixing near half filling of the first electron miniband of WS2. Our findings have significant implications for emerging correlated states in two-dimensional semiconductors, such as exciton condensates and Bose-Hubbard models, and optoelectronic applications of these materials.

preprint2020arXiv

Spectral and spatial isolation of single WSe$_2$ quantum emitters using hexagonal boron nitride wrinkles

Monolayer WSe$_2$ hosts bright single-photon emitters. Because of its compliance, monolayer WSe$_2$ conforms to patterned substrates without breaking, thus creating the potential for large local strain, which is one activation mechanism of its intrinsic quantum emitters. Here, we report an approach to creating spatially and spectrally isolated quantum emitters from WSe$_2$ monolayers with few or no detrimental sources of emission. We show that a bilayer of hexagonal boron nitride (hBN) and WSe$_2$ placed on a nanostructured substrate can be used to create and shape wrinkles that communicate local strain to the WSe$_2$, thus creating quantum emitters that are isolated from substrate features. We compare quantum emitters created directly on top of substrate features with quantum emitters forming along wrinkles and find that the spectra of the latter consist of mainly a single peak and a low background fluorescence. We also discuss possible approaches to controlling emitter position along hBN wrinkles.

preprint2020arXiv

Two-dimensional magnetic nanoelectromechanical resonators

Two-dimensional (2D) layered materials possess outstanding mechanical, electronic and optical properties, making them ideal materials for nanoelectromechanical applications. The recent discovery of 2D magnetic materials has promised a new class of magnetically active nanoelectromechanical systems (NEMS). Here we demonstrate resonators made of 2D CrI3, whose mechanical resonances depend on the magnetic state of the material. We quantify the underlining effects of exchange and anisotropy magnetostriction by measuring the field dependence of the resonance frequency under a magnetic field parallel and perpendicular to the easy axis, respectively. Furthermore, we show efficient strain tuning of magnetism in 2D CrI3 as a result of the inverse magnetostrictive effect using the NEMS platform. Our results establish the basis for mechanical detection of magnetism and magnetic phase transitions in 2D layered magnetic materials. The new magnetic NEMS may also find applications in magnetic actuation and sensing.

preprint2019arXiv

Imaging and control of critical spin fluctuations in two-dimensional magnets

Strong spin fluctuations are expected near the thermodynamic critical point of a continuous magnetic phase transition. Such critical spin fluctuations are highly correlated and in principle can occur at any time- and length-scales; they govern critical phenomena and potentially can drive new phases. Although theoretical studies have been made for decades, direct observation of critical spin fluctuations remains elusive. The recent discovery of two-dimensional (2D) layered magnets, in which spin fluctuations significantly modify magnetic properties as compared to their bulk counterparts and integration into heterostructures and devices can be easily achieved, provides an ideal platform to investigate and harness critical spin phenomena. Here we develop a fast and sensitive magneto-optical imaging microscope to achieve wide-field, real-time monitoring of critical spin fluctuations in single-layer CrBr3, which is a 2D ferromagnetic insulator. We track the critical phenomena directly from the fluctuation correlations and observe both slowing-down dynamics and enhanced correlation length. Through real-time feedback control of critical spin fluctuations, we further achieve switching of magnetic states solely by electrostatic gating without applying a magnetic field or a Joule current. The ability to directly image and control critical spin fluctuations in 2D magnets opens up exciting opportunities to explore critical phenomena and develop applications in nanoscale engines and information science.

preprint2016arXiv

Gate tuning of electronic phase transitions in two-dimensional NbSe$_2$

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the monolayer limit. The atomic thickness of two-dimensional (2D) TMD metals also opens up the possibility for control of these electronic phase transitions by electrostatic gating. Here we demonstrate reversible tuning of superconductivity and CDW order in model 2D TMD metal NbSe$_2$ by an ionic liquid gate. A variation up to ~ 50% in the superconducting transition temperature has been observed, accompanied by a correlated evolution of the CDW order. We find that the doping dependence of the superconducting and CDW phase transition in 2D NbSe$_2$ can be understood by a varying electron-phonon coupling strength induced by the gate-modulated carrier density and the electronic density of states near the Fermi surface.

preprint2015arXiv

Evidence of Ising pairing in superconducting NbSe$_2$ atomic layers

Two-dimensional transition metal dichalcogenides with strong spin-orbit interactions and valley-dependent Berry curvature effects have attracted tremendous recent interests. Although novel single-particle and excitonic phenomena related to spin-valley coupling have been extensively studied, effects of spin-momentum locking on collective quantum phenomena remain unexplored. Here we report an observation of superconducting monolayer NbSe$_2$ with an in-plane upper critical field over six times of the Pauli paramagnetic limit by magneto-transport measurements. The effect can be understood in terms of the competing Zeeman effect and large intrinsic spin-orbit interactions in non-centrosymmetric NbSe$_2$ monolayers, where the electronic spin is locked to the out-of-plane direction. Our results provide a strong evidence of unconventional Ising pairing protected by spin-momentum locking and open up a new avenue for studies of non-centrosymmetric superconductivity with unique spin and valley degrees of freedom in the exact two-dimensional limit.

preprint2015arXiv

Strongly enhanced charge-density-wave order in monolayer NbSe$_2$

Two-dimensional (2D) atomic materials possess very different properties from their bulk counterparts. While changes in the single-particle electronic properties have been extensively investigated, modifications in the many-body collective phenomena in the exact 2D limit, where interaction effects are strongly enhanced, remain mysterious. Here we report a combined optical and electrical transport study on the many-body collective-order phase diagram of 2D NbSe$_2$. Both the charge density wave (CDW) and the superconducting phase have been observed down to the monolayer limit. While the superconducting transition temperature ($T_C$) decreases with lowering the layer thickness, the newly observed CDW transition temperature ($T_{\mathrm{CDW}}$) increases drastically from 33 K in the bulk to 145 K in the monolayers. Such highly unusual enhancement of CDWs in atomically thin samples can be understood as a result of significantly enhanced electron-phonon interactions in 2D NbSe$_2$, which cause a crossover from the weak coupling to the strong coupling limit. This is supported by the large blueshift of the collective amplitude vibrations observed in our experiment.

preprint2014arXiv

Breaking of valley degeneracy by magnetic field in monolayer MoSe2

Using polarization-resolved photoluminescence spectroscopy, we investigate valley degeneracy breaking by out-of-plane magnetic field in back-gated monolayer MoSe$_2$ devices. We observe a linear splitting of $-0.22 \frac{\text{meV}}{\text{T}}$ between luminescence peak energies in $σ_{+}$ and $σ_{-}$ emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe$_2$ couple photon handedness to the exciton valley degree of freedom, so this splitting demonstrates valley degeneracy breaking. In addition, we find that the luminescence handedness can be controlled with magnetic field, to a degree that depends on the back-gate voltage. An applied magnetic field therefore provides effective strategies for control over the valley degree of freedom.

preprint2014arXiv

Possible Topological Superconducting Phases of MoS$_{2}$

Molybdenum disulphide (MoS$_2$) has attracted much interest in recent years due to its potential applications in a new generation of electronic devices. Recently, it was shown that thin films of MoS$_2$ can become superconducting with a highest $T_{c}$ of 10K when the material is heavily gated to the conducting regime. In this work, using the group theoretical approach, we determine the possible pairing symmetries of heavily gated MoS$_2$. Depending on the electron-electron interactions, the material can support an exotic spin-singlet $p +ip $-wave-like, an exotic spin-triplet s-wave-like and an conventional spin-triplet $p$-wave pairing phases. Importantly, the exotic spin-singlet $p+ip$-wave phase is a topological superconducting phase which breaks time-reversal symmetry spontaneously and possesses chiral Majorana edge states.

preprint2014arXiv

The Valley Hall Effect in MoS2 Transistors

Electrons in 2-dimensional crystals with a honeycomb lattice structure possess a new valley degree of freedom (DOF) in addition to charge and spin. Each valley is predicted to exhibit a Hall effect in the absence of a magnetic field whose sign depends on the valley index, but to date this effect has not been observed. Here we report the first observation of this new valley Hall effect (VHE). Monolayer MoS2 transistors are illuminated by circularly polarized light which preferentially excites electrons into a specific valley, and a finite anomalous Hall voltage is observed whose sign is controlled by the helicity of the light. Its magnitude is consistent with theoretical predictions of the VHE, and no anomalous Hall effect is observed in bilayer devices due to the restoration of crystal inversion symmetry. Our observation of the VHE opens up new possibilities for using the valley DOF as an information carrier in next-generation electronics and optoelectronics.

preprint2014arXiv

Tightly bound excitons in monolayer WSe2

Exciton binding energy and excited states in monolayers of tungsten diselenide (WSe2) are investigated using the combined linear absorption and two-photon photoluminescence excitation spectroscopy. The exciton binding energy is determined to be 0.37eV, which is about an order of magnitude larger than that in III-V semiconductor quantum wells and renders the exciton excited states observable even at room temperature. The exciton excitation spectrum with both experimentally determined one- and two-photon active states is distinct from the simple two-dimensional (2D) hydrogenic model. This result reveals significantly reduced and nonlocal dielectric screening of Coulomb interactions in 2D semiconductors. The observed large exciton binding energy will also have a significant impact on next-generation photonics and optoelectronics applications based on 2D atomic crystals.

preprint2013arXiv

Controlling the Spontaneous Emission Rate of Monolayer MoS$_2$ in a Photonic Crystal Nanocavity

We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS$_2$) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) mapping shows strong variations of emission when the MoS$_2$ monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization dependences of the cavity-coupled MoS$_2$ emission show a more than 5 times stronger extracted PL intensity than the un-coupled emission, which indicates an underlying cavity mode Purcell enhancement of MoS$_2$ SE rate exceeding a factor of 70.

preprint2013arXiv

Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2

We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, have been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of twodimensional crystals for applications in flexible electronics and optoelectronics.

preprint2013arXiv

Observation of Intense Second Harmonic Generation from MoS$_{2}$ Atomic Crystals

Since de discovery of graphene, the family of 2-dimensional materials has attracted much recent attention. In this work, the nonlinear optical properties of few-layer MoS2 two-dimensional crystals are studied using femtosecond laser pulses. We observed highly efficient second harmonic generation from the odd-layer crystals, which shows a polarization intensity dependence that directly reveals the underlying symmetry and orientation of the crystal. Additionally, the measured second-order susceptibility spectra provide information about the electronic structure of the material. Our results open up new opportunities for studying the non-linear optical properties in these novel 2D crystals.

preprint2013arXiv

Tuning many-body interactions in graphene: The effects of doping on excitons and carrier lifetimes

The optical properties of graphene are strongly affected by electron-electron (e-e) and electron-hole (e-h) interactions. Here we tune these many-body interactions through varying the density of free charge carriers. Measurements from the infrared to the ultraviolet reveal significant changes in the optical conductivity of graphene for both electron and hole doping. The shift, broadening, and modification in shape of the saddle-point exciton resonance reflect strong screening of the many-body interactions by the carriers, as well as changes in quasi-particle lifetimes. Ab initio calculations by the GW Bethe-Salpeter equation (GW-BSE), which take into account modification of both the repulsive e-e and the attractive e-h interactions, provide excellent agreement with experiment. Understanding the optical properties and high-energy carrier dynamics of graphene over a wide range of doping is crucial for both fundamental graphene physics and for emerging applications of graphene in photonics.

preprint2012arXiv

Control of valley polarization in monolayer MoS2 by optical helicity

Electronic and spintronic devices rely on the fact that free charge carriers in solids carry electric charge and spin, respectively. There are, however, other properties of charge carriers that might be exploited in new families of devices. In particular, if there are two or more conduction (or valence) band extrema in momentum space, then confining charge carriers in one of these valleys allows the possibility of valleytronic devices. Such valley polarization has been demonstrated by using strain and magnetic fields, but neither of these approaches allow for dynamic control. Recently, optical control of valley occupancy in graphene with broken inversion symmetry has been proposed but remains experimentally difficult to realize. Here we demonstrate that optical pumping with circularly-polarized light can achieve complete dynamic valley polarization in monolayer MoS2, a two dimensional (2D) non-centrosymmetric crystal with direct energy gaps at two valleys. Moreover, this polarization is retained for longer than 1 ns. Our results demonstrate the viability of optical valley control and valley-based electronic and optoelectronic applications in MoS2 monolayers.

preprint2012arXiv

High-Contrast Electro-Optic Modulation of a Photonic Crystal Nanocavity by Electrical Gating of Graphene

We demonstrate a high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A high quality (Q) factor air-slot nanocavity design is employed for high overlap between the optical field and graphene sheet. Tuning of graphene's Fermi level up to 0.8 eV enables efficient control of its complex dielectric constant, which allows modulation of the cavity reflection in excess of 10 dB for a swing voltage of only 1.5 V. We also observe a controllable resonance wavelength shift close to 2 nm around a wavelength of 1570 nm and a Q factor modulation in excess of three. These observations allow cavity-enhanced measurements of the graphene complex dielectric constant under different chemical potentials, in agreement with a theoretical model of the graphene dielectric constant under gating. This graphene-based nanocavity modulation demonstrates the feasibility of high-contrast, low-power frequency-selective electro-optic nanocavity modulators in graphene-integrated silicon photonic chips.

preprint2012arXiv

Observation of tightly bound trions in monolayer MoS2

Two-dimensional (2D) atomic crystals, such as graphene and transition-metal dichalcogenides, have emerged as a new class of materials with remarkable physical properties. In contrast to graphene, monolayer MoS2 is a non-centrosymmetric material with a direct energy gap. Strong photoluminescence, a current on-off ratio exceeding 10^8 in field-effect transistors, and efficient valley and spin control by optical helicity have recently been demonstrated in this material. Here we report the spectroscopic identification in doped monolayer MoS2 of tightly bound negative trions, a quasi-particle composed of two electrons and a hole. These quasi-particles, which can be created with valley and spin polarized holes, have no analogue in other semiconducting materials. They also possess a large binding energy (~ 20 meV), rendering them significant even at room temperature. Our results open up new avenues both for fundamental studies of many-body interactions and for opto-electronic and valleytronic applications in 2D atomic crystals.

preprint2011arXiv

Observation of an electrically tunable band gap in trilayer graphene

A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field. Thicker graphene layers are also highly attractive materials. The ability to produce a band gap in these systems is of great fundamental and practical interest. Both experimental and theoretical investigations of graphene trilayers with the typical ABA layer stacking have, however, revealed the lack of any appreciable induced gap. Here we contrast this behavior with that exhibited by graphene trilayers with ABC crystallographic stacking. The symmetry of this structure is similar to that of AB stacked graphene bilayers and, as shown by infrared conductivity measurements, permits a large band gap to be formed by an applied electric field. Our results demonstrate the critical and hitherto neglected role of the crystallographic stacking sequence on the induction of a band gap in few-layer graphene.

preprint2011arXiv

Observation of Intra- and Inter-band Transitions in the Optical Response of Graphene

The optical conductivity of freely suspended graphene was examined under non-equilibrium conditions using femtosecond pump-probe spectroscopy. We observed a conductivity transient that varied strongly with the electronic temperature, exhibiting a crossover from enhanced to decreased absorbance with increasing pump fluence. The response arises from a combination of bleaching of the inter-band transitions by Pauli blocking and induced absorption from the intra-band transitions of the carriers. The latter dominates at low electronic temperature, but, despite an increase in Drude scattering rate, is overwhelmed by the former at high electronic temperature. The time-evolution of the optical conductivity in all regimes can described in terms of a time-varying electronic temperature.

preprint2011arXiv

Seeing many-body effects in single- and few-layer graphene: Observation of two-dimensional saddle-point excitons

Significant excitonic effects were observed in graphene by measuring its optical conductivity in a broad spectral range including the two-dimensional π-band saddle-point singularities in the electronic structure. The strong electron-hole interactions manifest themselves in an asymmetric resonance peaked at 4.62 eV, which is red-shifted by nearly 600 meV from the value predicted by ab-initio GW calculations for the band-to-band transitions. The observed excitonic resonance is explained within a phenomenological model as a Fano interference of a strongly coupled excitonic state and a band continuum. Our experiment also showed a weak dependence of the excitonic resonance in few-layer graphene on layer thickness. This result reflects the effective cancellation of the increasingly screened repulsive electron-electron (e-e) and attractive electron-hole (e-h) interactions.

preprint2011arXiv

Structurally Dependent Fano Resonances in the Infrared Spectra of Phonons in Few-Layer Graphene

The in-plane optical phonons around 200 meV in few-layer graphene are investigated utilizing infrared absorption spectroscopy. The phonon spectra exhibit unusual asymmetric features characteristic of Fano resonances, which depend critically on the layer thickness and stacking order of the sample. The phonon intensities in samples with rhombohedral (ABC) stacking are significantly higher than those with Bernal (AB) stacking. These observations reflect the strong coupling between phonons and interband electronic transitions in these systems and the distinctive variation in the joint density of electronic states in samples of differing thickness and stacking order.

preprint2010arXiv

Atomically thin MoS2: A new direct-gap semiconductor

The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk material, the MoS2 monolayer emits light strongly. The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 1000 compared with the bulk material.

preprint2010arXiv

Electronic Structure of Few-Layer Graphene: Experimental Demonstration of Strong Dependence on Stacking Sequence

The electronic structure of few-layer graphene (FLG) samples with crystalline order was investigated experimentally by infrared absorption spectroscopy for photon energies ranging from 0.2 - 1 eV. Distinct optical conductivity spectra were observed for different samples having precisely the same number of layers. The different spectra arise from the existence of two stable polytypes of FLG, namely, Bernal (AB) stacking and rhombohedral (ABC) stacking. The observed absorption features, reflecting the underlying symmetry of the two polytypes and the nature of the associated van Hone singularities, were reproduced by explicit calculations within a tight-binding model. The findings demonstrate the pronounced effect of stacking order on the electronic structure of FLG.

preprint2010arXiv

Thermal conductance at the graphene-SiO2 interface measured by optical pump-probe spectroscopy

We have examined the interfacial thermal conductance σint of single and multi-layer graphene samples prepared on fused SiO2 substrates by mechanical exfoliation of graphite. By using an ultrafast optical pump pulse and monitoring the transient reflectivity on the picosecond time scale, we obtained an average σint of 5,000 W/cm2K for the graphene-SiO2 system. We observed significant variation in σint between individual samples, but found no systematic dependence on the thickness of the graphene layers.

preprint2010arXiv

Ultrafast Photoluminescence from Graphene

Since graphene has no band gap, photoluminescence is not expected from relaxed charge carriers. We have, however, observed significant light emission from graphene under excitation by ultrashort (30-fs) laser pulses. Light emission was found to occur across the visible spectral range (1.7 - 3.5 eV), with emitted photon energies exceeding that of the excitation laser (1.5 eV). The emission exhibits a nonlinear dependence on the laser fluence. In two-pulse correlation measurements of the time-domain response, a dominant relaxation time of tens of femtoseconds is observed. A two-temperature model describing the electrons and their interaction with strongly coupled optical phonons can account for the experimental observations.

preprint2009arXiv

Observation of an Electric-Field Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy

It has been predicted that application of a strong electric field perpendicular to the plane of bilayer graphene can induce a significant band gap. We have measured the optical conductivity of bilayer graphene with an efficient electrolyte top gate for a photon energy range of 0.2 - 0.7 eV. We see the emergence of new transitions as a band gap opens. A band gap approaching 200 meV is observed when an electric field ~ 1 V/nm is applied by an electrolyte gate to the bilayer system, inducing a carrier density of about 10^13 cm-2. The magnitude of the band gap and the features observed in the infrared conductivity spectra are broadly compatible with calculations within a tight-binding model.