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James Hone

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cond-mat.mes-hall cond-mat.mtrl-sci physics.optics cond-mat.str-el cond-mat.supr-con quant-ph cond-mat.stat-mech physics.app-ph

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preprint2025arXiv

Observing unconventional superconductivity via kinetic inductance in Weyl semimetal MoTe$_2$

Identifying the pairing symmetry of unconventional superconductors plays an essential role in the ongoing quest to understand correlated electronic matter. A long-standing approach is to study the temperature dependence of the London penetration depth $λ$ for evidence of nodal points where the superconducting gap vanishes. However, experimental reports can be ambiguous due to the requisite low-temperature resolution, and the similarity in signatures of nodal quasiparticles and impurity states. Here we study the pairing symmetry of Weyl semimetal $T_d$-MoTe$_2$, where previous measurements of $λ$ have yielded conflicting results. We utilize a novel technique based on a microwave resontor to measure the kinetic inductance of MoTe$_2$, which is directly related to $λ$. The high precision of this technique allows us to observe power-law temperature dependence of $λ$, and to measure the anomalous nonlinear Meissner effect -- the current dependence of $λ$ arising from nodal quasiparticles. Together, these measurements provide smoking gun signatures of nodal superconductivity.

preprint2023arXiv

Evidence for Exciton Crystals in a 2D Semiconductor Heterotrilayer

Two-dimensional (2D) transition metal dichalcogenides (TMDC) and their moiré interfaces have been demonstrated for correlated electron states, including Mott insulators and electron/hole crystals commensurate with moiré superlattices. Here we present spectroscopic evidences for ordered bosons - interlayer exciton crystals in a WSe2/MoSe2/WSe2 trilayer, where the enhanced Coulomb interactions over those in heterobilayers have been predicted to result in exciton ordering. While the dipolar interlayer excitons in the heterobilayer may be ordered by the periodic moiré traps, their mutual repulsion results in de-trapping at exciton density n_ex larger than 10^11 cm^-2 to form mobile exciton gases and further to electron-hole plasmas, both accompanied by broadening in photoluminescence (PL) peaks and large increases in mobility. In contrast, ordered interlayer excitons in the trilayer are characterized by negligible mobility and by sharper PL peaks persisting to n_ex approximately 10^12 cm^-2. We present evidences for the predicted quadrupolar exciton crystal and its transitions to dipolar excitons either with increasing n_ex or by an applied electric field. These ordered interlayer excitons may serve as models for the exploration of quantum phase transitions and quantum coherent phenomena.

preprint2022arXiv

A new flavor of correlation and superconductivity in small twist-angle trilayer graphene

When layers of graphene are rotationally misaligned by the magic angle, the moiré superlattice features extremely flat bands. Due to the enhanced density of states, the Coulomb interaction induces a variety of instabilities. The most prominent occur at integer filling and are therefore commonly attributed to spontaneous polarization of the moiré unit cell's `flavor' degrees of freedom -- spin, valley, and the flat-band degeneracy. As the dominant member of the hierarchy, these correlated states are thought to crucially determine further instabilities at lower energy scales, such as superconductivity and weaker incompressible states at fractional filling. In this work, we examine the behavior of twisted trilayer graphene in a window of twist angle around $1.3^{\circ}$, well below the expected magic angle of $1.55^{\circ}$. In this small twist angle regime, we find surprisingly narrow bands, which are populated with both an abundance of correlation-driven states at fractional filling as well as robust superconductivity. The absence of linear-in-$T$ resistivity without significant reduction of the superconducting transition temperature, provides insights into the origin of both phenomena. Most remarkably, the hierarchy between integer and fractional filling is absent, indicating that flavor polarization does not play a governing role. The prominence of fractional filling in the small twist angle regime also points towards a longer-range effective Coulomb interaction. Combined, our results shed new light on outstanding questions in the field, while establishing the small twist angle regime as a new paradigm for exploring novel flavors of moiré physics.

preprint2022arXiv

Dark-exciton driven energy funneling into dielectric inhomogeneities in two-dimensional semiconductors

The optoelectronic and transport properties of two-dimensional transition metal dichalcogenide semiconductors (2D TMDs) are highly susceptible to external perturbation, enabling precise tailoring of material function through post-synthetic modifications. Here we show that nanoscale inhomogeneities known as nanobubbles can be used for both strain and, less invasively, dielectric tuning of exciton transport in bilayer tungsten disulfide (WSe2). We use ultrasensitive spatiotemporally resolved optical scattering microscopy to directly image exciton transport, revealing that dielectric nanobubbles are surprisingly efficient at funneling and trapping excitons at room temperature, even though the energies of the bright excitons are negligibly affected. Our observations suggest that exciton funneling in dielectric inhomogeneities is driven by momentum-indirect (dark) excitons whose energies are more sensitive to dielectric perturbations than bright excitons. These results reveal a new pathway to control exciton transport in 2D semiconductors with exceptional spatial and energetic precision using dielectric engineering of dark state energetic landscapes.

preprint2022arXiv

Dissipation-enabled hydrodynamic conductivity in a tunable bandgap semiconductor

Electronic transport in the regime where carrier-carrier collisions are the dominant scattering mechanism has taken on new relevance with the advent of ultraclean two-dimensional materials. Here we present a combined theoretical and experimental study of ambipolar hydrodynamic transport in bilayer graphene demonstrating that the conductivity is given by the sum of two Drude-like terms that describe relative motion between electrons and holes, and the collective motion of the electron-hole plasma. As predicted, the measured conductivity of gapless, charge-neutral bilayer graphene is sample- and temperature-independent over a wide range. Away from neutrality, the electron-hole conductivity collapses to a single curve, and a set of just four fitting parameters provides quantitative agreement between theory and experiment at all densities, temperatures, and gaps measured. This work validates recent theories for dissipation-enabled hydrodynamic conductivity and creates a link between semiconductor physics and the emerging field of viscous electronics.

preprint2022arXiv

Electron spin resonance and collective excitations in magic-angle twisted bilayer graphene

In a strongly correlated system, collective excitations contain key information regarding the electronic order of the underlying ground state. An abundance of collective modes in the spin and valley isospin channels of magic-angle graphene moiré bands has been alluded to by a series of recent experiments. However, direct observation of collective excitations has remained elusive due to the lack of a spin probe. In this work, we use a resistively-detected electron spin resonance technique to look for low-energy collective excitations in magic-angle twisted bilayer graphene. We report direct observation of collective modes in the form of microwave-induced resonance near half filling of the moiré flatbands. The frequency-magnetic field dependence of these resonance modes sheds light onto the nature of intervalley spin coupling, allowing us to extract parameters such as intervalley exchange interaction and spin stiffness. Two independent observations testify that the generation and detection of the microwave resonance relies on the strong correlation within the flat moiré energy band. First, the onset of robust resonance response coincides with the spontaneous flavor polarization at half moiré filling, and remains absent in the density range where the underlying Fermi surface is isospin unpolarized. Second, we performed the same resonance measurement on graphene monolayer and bilayer samples, including twisted bilayer with a large twist angle, where flatband physics is absent. We observe no indication of resonance response in these samples across a large range of carrier density, microwave frequency and power. A natural explanation is that the resonance response near the magic angle originates from "Dirac revivals" and the resulting isospin order.

preprint2022arXiv

Miniaturizing transmon qubits using van der Waals materials

Quantum computers can potentially achieve an exponential speedup versus classical computers on certain computational tasks, as recently demonstrated in systems of superconducting qubits. However, these qubits have large footprints due to their large capacitor electrodes needed to suppress losses by avoiding dielectric materials. This tactic hinders scaling by increasing parasitic coupling among circuit components, degrading individual qubit addressability, and limiting the spatial density of qubits. Here, we take advantage of the unique properties of the van der Waals (vdW) materials to reduce the qubit area by a factor of $>1000$ while preserving the required capacitance without increasing substantial loss. Our qubits combine conventional aluminum-based Josephson junctions with parallel-plate capacitors composed of crystalline layers of superconducting niobium diselenide (NbSe$_2$) and insulating hexagonal-boron nitride (hBN). We measure a vdW transmon $T_1$ relaxation time of 1.06 $μ$s, which demonstrates a path to achieve high-qubit-density quantum processors with long coherence times, and illustrates the broad utility of layered heterostructures in low-loss, high-coherence quantum devices.

preprint2022arXiv

P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3

1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States 5 School of Physics, the University of Melbourne, Melbourne, VIC 3010, Australia 6 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 7 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 8 School of Physics, University of New South Wales, 2052 Sydney, Australia 9 Center of Condensed Matter Sciences and Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan 10 Monash Centre for Atomically Thin Materials, Monash University, Clayton, 3800, VIC, Australia

preprint2022arXiv

Quadrupolar excitons in a tunnel-coupled van der Waals heterotrilayer

Strongly bound excitons and many-body interactions between them determine light-matter interactions in van der Waals (vdW) heterostructures of 2D semiconductors. Unlike fundamental particles, quasiparticles in condensed matter, such as excitons, can be tailored to alter their interactions and realize emergent quantum phases. Here, using a WS$_2$/WSe$_2$/WS$_2$ heterotrilayer, we create a quantum superposition of oppositely oriented dipolar excitons - a quadrupolar exciton - wherein an electron is layer-hybridized in WS$_2$ layers while the hole localizes in WSe$_2$. In contrast to dipolar excitons, symmetric quadrupolar excitons only redshift in an out-of-plane electric field, consistent with ab initio calculations, regaining dipolar characteristics at higher fields. Electric field tunes the hybridization and allows for lifetime control through modification of the excitonic wavefunction. Lack of density-dependent blue shift of heterotrilayer excitons compared to dipolar excitons is consistent with quadrupolar interactions. Our results present vdW heterotrilayers as a field-tunable platform to engineer light-matter interactions and explore quantum phase transitions between spontaneously ordered many-exciton phases.

preprint2022arXiv

Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-of-plane electric field. We use high-quality bilayer graphene with an intrinsic and tunable bandgap, illuminated by circularly polarized mid-infrared light and confirm that the observed Hall voltage arises from an optically-induced valley population. Compared with molybdenum disulfide, we find orders of magnitude larger VSHE, attributed to the inverse scaling of the Berry curvature with bandgap. By monitoring the valley-selective Hall conductivity, we study Berry curvature's evolution with bandgap. This in situ manipulation of VSHE paves the way for topological and quantum geometric opto-electronic devices, such as more robust switches and detectors.

preprint2022arXiv

Unzipping hBN with ultrashort mid-infrared pulses

Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser-writing require cleanroom facilities or leave residue. Here, we describe a new approach to create atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation in the mid-infrared (mid-IR). We term this phenomenon "unzipping" to describe the rapid formation and growth of a <30-nm-wide crack from a point within the laser-driven region. The formation of these features is attributed to large atomic displacements and high local bond strain from driving the crystal at a natural resonance. This process is distinguished by (i) occurring only under resonant phonon excitation, (ii) producing highly sub-wavelength features, and (iii) sensitivity to crystal orientation and pump laser polarization. Its cleanliness, directionality, and sharpness enable applications in in-situ flake cleaving and phonon-wave-coupling via free space optical excitation.

preprint2021arXiv

Bilayer WSe$_2$ as a natural platform for interlayer exciton condensates in the strong coupling limit

Exciton condensates (EC) are macroscopic coherent states arising from condensation of electron-hole pairs. Bilayer heterostructures, consisting of two-dimensional electron and hole layers separated by a tunnel barrier, provide a versatile platform to realize and study EC. The tunnel barrier suppresses recombination yielding long-lived excitons. However, this separation also reduces interlayer Coulomb interactions, limiting the exciton binding strength. Here, we report the observation of EC in naturally occurring 2H-stacked bilayer WSe$_2$. In this system, the intrinsic spin-valley structure suppresses interlayer tunneling even when the separation is reduced to the atomic limit, providing access to a previously unattainable regime of strong interlayer coupling. Using capacitance spectroscopy, we investigate magneto-EC, formed when partially filled Landau levels (LL) couple between the layers. We find that the strong-coupling EC show dramatically different behaviour compared with previous reports, including an unanticipated variation of the EC robustness with the orbital number, and find evidence for a transition between two types of low-energy charged excitations. Our results provide a demonstration of tuning EC properties by varying the constituent single-particle wavefunctions.

preprint2021arXiv

Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides

Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not only combine characteristics of the individual building blocks, but can also exhibit emergent physical properties absent in the parent compounds through interlayer interactions. Here we report on a new family of emergent, nanometer-thick, semiconductor 2D ferroelectrics, where the individual constituents are well-studied non-ferroelectric monolayer transition metal dichalcogenides (TMDs), namely WSe2, MoSe2, WS2, and MoS2. By stacking two identical monolayer TMDs in parallel, we obtain electrically switchable rhombohedral-stacking configurations, with out-of-plane polarization that is flipped by in-plane sliding motion. Fabricating nearly-parallel stacked bilayers enables the visualization of moiré ferroelectric domains as well as electric-field-induced domain wall motion with piezoelectric force microscopy (PFM). Furthermore, by using a nearby graphene electronic sensor in a ferroelectric field transistor geometry, we quantify the ferroelectric built-in interlayer potential, in good agreement with first-principles calculations. The novel semiconducting ferroelectric properties of these four new TMDs opens up the possibility of studying the interplay between ferroelectricity and their rich electric and optical properties.

preprint2021arXiv

Making high-quality quantum microwave devices with van der Waals superconductors

Ultra low-loss microwave materials are crucial for enhancing quantum coherence and scalability of superconducting qubits. Van der Waals (vdW) heterostructure is an attractive platform for quantum devices due to the single-crystal structure of the constituent two-dimensional (2D) layered materials and the lack of dangling bonds at their atomically sharp interfaces. However, new fabrication and characterization techniques are required to determine whether these structures can achieve low loss in the microwave regime. Here we report the fabrication of superconducting microwave resonators using NbSe$_2$ that achieve a quality factor $Q > 10^5$. This value sets an upper bound that corresponds to a resistance of $\leq 192 μΩ$ when considering the additional loss introduced by integrating NbSe$_2$ into a standard transmon circuit. This work demonstrates the compatibility of 2D layered materials with high-quality microwave quantum devices.

preprint2021arXiv

Moiré heterostructures as a condensed matter quantum simulator

Twisted van der Waals heterostructures have latterly received prominent attention for their many remarkable experimental properties, and the promise that they hold for realising elusive states of matter in the laboratory. We propose that these systems can, in fact, be used as a robust quantum simulation platform that enables the study of strongly correlated physics and topology in quantum materials. Among the features that make these materials a versatile toolbox are the tunability of their properties through readily accessible external parameters such as gating, straining, packing and twist angle; the feasibility to realize and control a large number of fundamental many-body quantum models relevant in the field of condensed-matter physics; and finally, the availability of experimental readout protocols that directly map their rich phase diagrams in and out of equilibrium. This general framework makes it possible to robustly realize and functionalize new phases of matter in a modular fashion, thus broadening the landscape of accessible physics and holding promise for future technological applications.

preprint2020arXiv

Crossover between Strongly-coupled and Weakly-coupled Exciton Superfluids

In fermionic systems, superconductivity and superfluidity are enabled through the condensation of fermion pairs. The nature of this condensate can be tuned by varying the pairing strength, with weak coupling yielding a BCS-like condensate and strong coupling resulting in a BEC-like process. However, demonstration of this cross-over has remained elusive in electronic systems. Here we study graphene double-layers separated by an atomically thin insulator. Under applied magnetic field, electrons and holes couple across the barrier to form bound magneto-excitons whose pairing strength can be continuously tuned by varying the effective layer separation. Using temperature-dependent Coulomb drag and counter-flow current measurements, we demonstrate the capability to tune the magneto-exciton condensate through the entire weak-coupling to strong-coupling phase diagram. Our results establish magneto-exciton condensates in graphene as a model platform to study the crossover between two Bosonic quantum condensate phases in a solid state system.

preprint2020arXiv

Enhanced Superconductivity in Monolayer $T_d$-MoTe$_2$ with Tilted Ising Spin Texture

Crystalline two-dimensional (2D) superconductors with low carrier density are an exciting new class of materials in which superconductivity coexists with strong interactions, the effects of complex topology are not obscured by disorder, and electronic properties can be strongly tuned by electrostatic gating. Very recently, two such materials, 'magic-angle' twisted bilayer graphene and monolayer $T_d$-WTe$_2$, have been reported to show superconductivity at temperatures near 1 K. Here we report superconductivity in semimetallic monolayer $T_d$-MoTe$_2$. The critical temperature $T_\textrm{c}$ reaches 8 K, a sixty-fold enhancement as compared to the bulk. This anomalous increase in $T_\textrm{c}$ is only observed in monolayers, and may be indicative of electronically mediated pairing. Reflecting the low carrier density, the critical temperature, magnetic field, and current density are all tunable by an applied gate voltage, revealing a superconducting dome that extends across both hole and electron pockets. The temperature dependence of the in-plane upper critical field is distinct from that of $2H$ transition metal dichalcogenides (TMDs), consistent with a tilted spin texture as predicted by \textit{ab initio} theory.

preprint2020arXiv

Odd- and even-denominator fractional quantum Hall states in monolayer WSe$_2$

Monolayer (ML) semiconducting transition-metal dichalcogenides (TMDs) represent a unique class of two-dimensional (2D) electron systems. Their atomically thin structure -- just like graphene -- facilitates gate-tunability, while the sizable band gap and strong spin-orbit coupling hold promise for properties beyond graphene. Measurements under large magnetic fields have revealed an unusual LL structure, distinct from other 2D electron systems. However, owing to limited sample quality and poor electrical contact, probing the lowest Landau levels (LLs) has been challenging, and observation of electron correlations within the fractionally filled LLs regime has not been possible. Here, through bulk electronic compressibility measurements, we investigate the LL structure of ML WSe$_2$ in the extreme quantum limit, and observe fractional quantum Hall (FQH) states in the lowest three LLs. The odd-denominator FQH sequences demonstrate a systematic evolution with the LL orbital index, which has not been observed in any other system but is consistent with generic theoretical expectations. In addition, we observe an even-denominator state in the second LL that is expected to host non-Abelian statistics. Our results suggest that the 2D semiconductors can provide an experimental platform that closely resembles idealized theoretical models in the quantum Hall regime.

preprint2020arXiv

One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers

The formation of interfacial moiré patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moiré landscape have been reported in recent experimental studies. Such moiré confinement has offered the exciting possibility to tailor new excitonic systems, such as ordered arrays of zero-dimensional (0D) quantum emitters and their coupling into topological superlattices. A remarkable nature of the moiré potential is its dramatic response to strain, where a small uniaxial strain can tune the array of quantum-dot-like 0D traps into parallel stripes of one-dimensional (1D) quantum wires. Here, we present direct evidence for the 1D moiré potentials from real space imaging and the corresponding 1D moiré excitons from photoluminescence (PL) emission in MoSe2/WSe2 heterobilayers. Whereas the 0D moiré excitons display quantum emitter-like sharp PL peaks with circular polarization, the PL emission from 1D moiré excitons has linear polarization and two orders of magnitude higher intensity. The results presented here establish strain engineering as a powerful new method to tailor moiré potentials as well as their optical and electronic responses on demand.

preprint2020arXiv

Optical Measurement of Pseudo-Spin Texture of the Exciton Fine-Structure in Monolayer WSe2 within the Light Cone

Several theoretical predictions have claimed that the neutral exciton of TMDCs splits into a transversal and longitudinal exciton branch, with the longitudinal one, which is the upper branch, exhibiting an extraordinary strong dispersion in the meV range within the light cone. Historically, this was linked for semiconductor quantum wells to strong far-field optical dipole coupling, or strong electronic long-range exchange interactions, describing two sides of the same coin. Recently, experiments utilizing Fourier-space spectroscopy have shown that the exciton (exciton-polariton) dispersion can indeed be measured for high-quality hexagonal-BN-encapsulated WSe2 monolayer samples and can confirm the energy scale. Here, the exciton fine-structure's pseudo-spin and the valley polarization are investigated as a function of the centre-of-mass-momentum and excitation-laser detuning. For quasi-resonant excitation, a strong dispersion featuring a pronounced momentum-dependent helicity is observed. By increasing the excitation energy step-wise towards and then above the electronic band gap, the dispersion and the helicity systematically decrease due to contributions of incoherent excitons and emission from plasma. The decline of the helicity with centre-of-mass momentum can be phenomenologically modelled by the Maialle-Silva-Sham mechanism using the exciton splitting as the source of an effective magnetic field.

preprint2020arXiv

Spatially mixed moiré excitons in two-dimensional van der Waals superlattices

Moiré superlattices open an unprecedented opportunity for tailoring interactions between quantum particles and their coupling to electromagnetic fields. Strong superlattice potential generates moiré minibands of excitons -- bound pairs of electrons and holes that reside either in a single layer (intralayer excitons) or two separate layers (interlayer excitons). The twist-angle-controlled interlayer hybridization of carriers can also mix the two types of excitons to combine the strengths of both. Here, we report a direct observation of spatially mixed moiré excitons in angle-aligned WSe2/WS2 and MoSe2/WS2 superlattices by optical reflectance spectroscopy. The strongly interacting interlayer and intralayer moiré excitons in WSe2/WS2 manifest energy level anticrossing and oscillator strength redistribution under a vertical electric field. We also observe doping-dependent exciton miniband renormalization and mixing near half filling of the first electron miniband of WS2. Our findings have significant implications for emerging correlated states in two-dimensional semiconductors, such as exciton condensates and Bose-Hubbard models, and optoelectronic applications of these materials.

preprint2019arXiv

Broadband optical parametric amplification by two-dimensional semiconductors

Optical parametric amplification is a second-order nonlinear process whereby an optical signal is amplified by a pump via the generation of an idler field. It is the key ingredient of tunable sources of radiation that play an important role in several photonic applications. This mechanism is inherently related to spontaneous parametric down-conversion that currently constitutes the building block for entangled photon pair generation, which has been exploited in modern quantum technologies ranging from computing to communications and cryptography. Here we demonstrate single-pass optical parametric amplification at the ultimate thickness limit; using semiconducting transition-metal dichalcogenides, we show that amplification can be attained over a propagation through a single atomic layer. Such a second-order nonlinear interaction at the 2D limit bypasses phase-matching requirements and achieves ultrabroad amplification bandwidths. The amplification process is independent on the in-plane polarization of the impinging signal and pump fields. First-principle calculations confirm the observed polarization invariance and linear relationship between idler and pump powers. Our results pave the way for the development of atom-sized tunable sources of radiation with applications in nanophotonics and quantum information technology.

preprint2019arXiv

Low-loss composite photonic platform based on 2D semiconductor monolayers

Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic doping. The optical properties of TMDs have been shown to change drastically with doping in the wavelength range near the excitonic resonances. However, little is known about the effect of doping on the optical properties of TMDs away from these resonances, where the material is transparent and therefore could be leveraged in photonic circuits. Here, we probe the electro-optic response of monolayer TMDs at near infrared (NIR) wavelengths (i.e. deep in the transparency regime), by integrating them on silicon nitride (SiN) photonic structures to induce strong light$-$matter interaction with the monolayer. We dope the monolayer to carrier densities of ($7.2 \pm 0.8$) $\times$ $10^{13} \textrm{cm}^{-2}$, by electrically gating the TMD using an ionic liquid. We show strong electro-refractive response in monolayer tungsten disulphide (WS$_2$) at NIR wavelengths by measuring a large change in the real part of refractive index $Δ$n = $0.53$, with only a minimal change in the imaginary part $Δ$k = $0.004$. The doping induced phase change ($Δ$n), compared to the induced absorption ($Δ$k) measured for WS$_2$ ($Δ$n/$Δ$k $\sim 125$), a key metric for photonics, is an order of magnitude higher than the $Δ$n/$Δ$k for bulk materials like silicon ($Δ$n/$Δ$k $\sim 10$), making it ideal for various photonic applications. We further utilize this strong tunable effect to demonstrate an electrostatically gated SiN-WS$_2$ phase modulator using a WS$_2$-HfO$_2$ (Hafnia)-ITO (Indium Tin Oxide) capacitive configuration, that achieves a phase modulation efficiency (V$_π$L) of 0.8 V $\cdot$ cm with a RC limited bandwidth of 0.3 GHz.

preprint2019arXiv

Magic continuum in twisted bilayer WSe2

Emergent quantum phases driven by electronic interactions can manifest in materials with narrowly dispersing, i.e. "flat", energy bands. Recently, flat bands have been realized in a variety of graphene-based heterostructures using the tuning parameters of twist angle, layer stacking and pressure, and resulting in correlated insulator and superconducting states. Here we report the experimental observation of similar correlated phenomena in twisted bilayer tungsten diselenide (tWSe2), a semiconducting transition metal dichalcogenide (TMD). Unlike twisted bilayer graphene where the flat band appears only within a narrow range around a "magic angle", we observe correlated states over a continuum of angles, spanning 4 degree to 5.1 degree. A Mott-like insulator appears at half band filling that can be sensitively tuned with displacement field. Hall measurements supported by ab initio calculations suggest that the strength of the insulator is driven by the density of states at half filling, consistent with a 2D Hubbard model in a regime of moderate interactions. At 5.1 degree twist, we observe evidence of superconductivity upon doping away from half filling, reaching zero resistivity around 3 K. Our results establish twisted bilayer TMDs as a model system to study interaction-driven phenomena in flat bands with dynamically tunable interactions.

preprint2016arXiv

Electron optics with ballistic graphene junctions

Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Moreover ballistic transport over micron length scales at ambient temperature has been realized, providing an ideal platform to realize a new generation of device based on electron lensing. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snells law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Our results pave the way for realizing novel electron optics based on graphene pn junctions.

preprint2016arXiv

Graphene mechanical oscillators with tunable frequency

Oscillators, which produce continuous periodic signals from direct current power, are central to modern communications systems, with versatile applications such as timing references and frequency modulators. However, conventional oscillators typically consist of macroscopic mechanical resonators such as quartz crystals, which require excessive off-chip space. Here we report oscillators built on micron-size, atomically-thin graphene nanomechanical resonators, whose frequencies can be electrostatically tuned by as much as 14\%. The self-sustaining mechanical motion of the oscillators is generated and transduced at room temperature by simple electrical circuitry. The prototype graphene voltage controlled oscillators exhibit frequency stability and modulation bandwidth sufficient for modulation of radio-frequency carrier signals. As a demonstration, we employ a graphene oscillator as the active element for frequency modulated signal generation, and achieve efficient audio signal transmission.

preprint2016arXiv

High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering

This study addresses high electric field transport in multilayer black phosphorus (BP) field effect transistors (FETs) with self-heating and thermal spreading by dielectric engineering. Interestingly, we found that multilayer BP device on a SiO2 substrate exhibited a maximum current density of 3.3 x 10E10 A/m2 at an electric field of 5.58 MV/m, several times higher than multilayer MoS2. Our breakdown thermometry analysis revealed that self-heating was impeded along BP-dielectric interface, resulting in a thermal plateau inside the channel and eventual Joule breakdown. Using a size-dependent electro-thermal transport model, we extracted an interfacial thermal conductance of 1-10 MW/m2 K for the BP-dielectric interfaces. By using hBN as a dielectric material for BP instead of thermally resistive SiO2 (about 1.4 W/m K), we observed a 3 fold increase in breakdown power density and a relatively higher electric field endurance together with efficient and homogenous thermal spreading because hBN had superior structural and thermal compatibility with BP. We further confirmed our results based on micro-Raman spectroscopy and atomic force microscopy, and observed that BP devices on hBN exhibited centrally localized hotspots with a breakdown temperature of 600K, while the BP device on SiO2 exhibited a hotspot in the vicinity of the electrode at 520K.

preprint2016arXiv

Influence of the Substrate Material on the Optical Properties of Tungsten Diselenide Monolayers

Monolayers of transition-metal dichalcogenides such as WSe2 have become increasingly attractive due to their potential in electrical and optical applications. Because the properties of these 2D systems are known to be affected by their surroundings, we report how the choice of the substrate material affects the optical properties of monolayer WSe2. To accomplish this study, pump-density-dependent micro-photoluminescence measurements are performed with time-integrating and time-resolving acquisition techniques. Spectral information and power-dependent mode intensities are compared at 290K and 10K for exfoliated WSe2 on SiO2/Si, sapphire (Al2O3), hBN/Si3N4/Si, and MgF2, indicating substrate-dependent appearance and strength of exciton, trion, and biexciton modes. Additionally, one CVD-grown WSe2 monolayer on sapphire is included in this study for direct comparison with its exfoliated counterpart. Time-resolved micro-photoluminescence shows how radiative decay times strongly differ for different substrate materials. Our data indicates exciton-exciton annihilation as a shortening mechanism at room temperature, and subtle trends in the decay rates in correlation to the dielectric environment at cryogenic temperatures. On the measureable time scales, trends are also related to the extent of the respective 2D-excitonic modes' appearance. This result highlights the importance of further detailed characterization of exciton features in 2D materials, particularly with respect to the choice of substrate.

preprint2016arXiv

Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2

We report a determination of the complex in-plane dielectric function of monolayers of four transition metal dichalcogenides: MoS2, MoSe2, WS2 and WSe2, for photon energies from 1.5 - 3 eV. The results were obtained from reflection spectra using a Kramers-Kronig constrained variational analysis. From the dielectric functions, we obtain the absolute absorbance of the monolayers. We also provide a comparison of the dielectric function for the monolayers with the corresponding bulk materials.

preprint2016arXiv

Modulation of mechanical resonance by chemical potential oscillation in graphene

The classical picture of the force on a capacitor assumes a large density of electronic states, such that the electrochemical potential of charges added to the capacitor is given by the external electrostatic potential and the capacitance is determined purely by geometry. Here we consider capacitively driven motion of a nano-mechanical resonator with a low density of states, in which these assumptions can break down. We find three leading-order corrections to the classical picture: the first of is a modulation in the static force due to variation in the internal chemical potential, the second and third are change in static force and dynamic spring constant due to the rate of change of chemical potential, expressed as the quantum (density of states) capacitance. As a demonstration, we study a capacitively driven graphene mechanical resonators, where the chemical potential is modulated independently of the gate voltage using an applied magnetic field to manipulate the energy of electrons residing in discrete Landau levels. In these devices, we observe large periodic frequency shifts consistent with the three corrections to the classical picture. In devices with extremely low strain and disorder, the first correction term dominates and the resonant frequency closely follows the chemical potential. The theoretical model fits the data with only one adjustable parameter representing disorder-broadening of the Landau levels. The underlying electromechanical coupling mechanism is not limited the particular choice of material, geometry, or mechanism for variation in chemical potential, and can thus be extended to other low-dimensional systems.

preprint2016arXiv

Multiple Hot-Carrier Collection in Photo-Excited Graphene Moire Superlattices

In conventional light harvesting devices, the absorption of a single photon only excites one electron, which sets the standard limit of power-conversion efficiency, such as the Shockley-Queisser limit. In principle, generating and harnessing multiple carriers per absorbed photon can improve the efficiency and possibly overcome this limit. Here, we report the observation of multiple hot carrier collection in graphene-boron-nitride Moire superlattice structures. A record-high zero-bias photoresponsivity of 0.3 ampere per watt, equivalently, an external quantum efficiency exceeding 50 percent, is achieved utilizing graphene photo-Nernst effect, which demonstrates a collection of at least 5 carriers per absorbed photon. We reveal that this effect arises from the enhanced Nernst coefficient through Lifshtiz transition at low energy Van Hove singularities, which is an emergent phenomenon due to the formation of Moire minibands. Our observation points to a new means for extremely efficient and flexible optoelectronics based on van der Waals heterostructures.

preprint2016arXiv

Strong interfacial exchange field in the graphene/EuS heterostructure

Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low-power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic insulator enables efficient control of local spin generation and spin modulation in 2D devices without compromising the delicate material structures. Using graphene as a prototypical 2D system, we demonstrate that its coupling to the model magnetic insulator (EuS) produces a substantial MEF (> 14 T) with potential to reach hundreds of Tesla, which leads to orders-of-magnitude enhancement in the spin signal originated from Zeeman spin-Hall effect. Furthermore, the new ferromagnetic ground state of Dirac electrons resulting from the strong MEF may give rise to quantized spin-polarized edge transport. The MEF effect shown in our graphene/EuS devices therefore provides a key functionality for future spin logic and memory devices based on emerging 2D materials in classical and quantum information processing.

preprint2016arXiv

SU-8 clamped CVD graphene drum resonators

Graphene mechanical resonators are the ultimate two-dimensional nanoelectromechanical systems (NEMS) with applications in sensing and signal processing. While initial devices have shown promising results, an ideal graphene NEMS resonator should be strain engineered, clamped at the edge without trapping gas underneath, and electrically integratable. In this letter, we demonstrate fabrication and direct electrical measurement of circular SU-8 polymer-clamped chemical vapor deposition (CVD) graphene drum resonators. The clamping increases device yield and responsivity, while providing a cleaner resonance spectrum from eliminated edge modes. Furthermore, this resonator is highly strained, indicating its potential in strain engineering for performance enhancement.

preprint2016arXiv

The hot pick-up technique for batch assembly of van der Waals heterostructures

The assembly of individual two-dimensional materials into van der Waals heterostructures enables the construction of layered three-dimensional materials with desirable electronic and optical properties. A core problem in the fabrication of these structures is the formation of clean interfaces between the individual two-dimensional materials which would affect device performance. We present here a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield. For the monolayer devices we found semiclassical mean free paths up to 0.9 micrometer, with the narrowest samples showing clear indications of the transport being affected by boundary scattering. The presented method readily lends itself to fabrication of van der Waals heterostructures in both ambient and controlled atmospheres, while the ability to assemble pre-patterned layers paves the way for complex three-dimensional architectures.

preprint2016arXiv

Thermoelectric detection of propagating plasmons in graphene

Controlling, detecting and generating propagating plasmons by all-electrical means is at the heart of on-chip nano-optical processing. Graphene carries long-lived plasmons that are extremely confined and controllable by electrostatic fields, however electrical detection of propagating plasmons in graphene has not yet been realized. Here, we present an all-graphene mid-infrared plasmon detector, where a single graphene sheet serves simultaneously as the plasmonic medium and detector. Rather than achieving detection via added optoelectronic materials, as is typically done in other plasmonic systems, our device converts the natural decay product of the plasmon---electronic heat---directly into a voltage through the thermoelectric effect. We employ two local gates to fully tune the thermoelectric and plasmonic behaviour of the graphene. High-resolution real-space photocurrent maps are used to investigate the plasmon propagation and interference, decay, thermal diffusion, and thermoelectric generation.

preprint2016arXiv

Tunable Ultrafast Thermal Relaxation in Graphene Measured by Continuous-Wave Photomixing

Hot electron effects in graphene are significant because of graphene's small electronic heat capacity and weak electron-phonon coupling, yet the dynamics and cooling mechanisms of hot electrons in graphene are not completely understood. We describe a novel photocurrent spectroscopy method that uses the mixing of continuous-wave lasers in a graphene photothermal detector to measure the frequency dependence and nonlinearity of hot-electron cooling in graphene as a function of the carrier concentration and temperature. The method offers unparalleled sensitivity to the nonlinearity, and probes the ultrafast cooling of hot carriers with an optical fluence that is orders of magnitude smaller than in conventional time-domain methods, allowing for accurate characterization of electron-phonon cooling near charge neutrality. Our measurements reveal that near the charge neutral-point the nonlinear power dependence of the electron cooling is dominated by disorder-assisted collisions, while at higher carrier concentrations conventional momentum-conserving cooling prevails in the nonlinear dependence. The relative contribution of these competing mechanisms can be electrostatically tuned through the application of a gate voltage -- an effect that is unique to graphene.

preprint2015arXiv

Fractional fractal quantum Hall effect in graphene superlattices

The Hofstadter energy spectrum provides a uniquely tunable system to study emergent topological order in the regime of strong interactions. Previous experiments, however, have been limited to the trivial case of low Bloch band filling where only the Landau level index plays a significant role. Here we report measurement of high mobility graphene superlattices where the complete unit cell of the Hofstadter spectrum is accessible. We observe coexistence of conventional fractional quantum Hall effect (QHE) states together with the integer QHE states associated with the fractal Hofstadter spectrum. At large magnetic field, a new series of states appear at fractional Bloch filling index. These fractional Bloch band QHE states are not anticipated by existing theoretical pictures and point towards a new type of many-body state.

preprint2015arXiv

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cut-off at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

preprint2015arXiv

Measurement of lateral and interfacial thermal conductivity of single- and bi-layer MoS2 and MoSe2 using refined optothermal Raman technique

Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides (TMDCs) have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we demonstrate a refined version of the optothermal Raman technique to measure the thermal transport properties of two TMDC materials, MoS2 and MoSe2, in single-layer (1L) and bi-layer (2L) forms. This new version incorporates two crucial improvements over previous implementations. First, we utilize more direct measurements of the optical absorption of the suspended samples under study and find values ~40% lower than previously assumed. Second, by comparing the response of fully supported and suspended samples using different laser spot sizes, we are able to independently measure the interfacial thermal conductance to the substrate and the lateral thermal conductivity of the supported and suspended materials. The approach is validated by examining the response of a suspended film illuminated in different radial positions. For 1L MoS2 and MoSe2, the room-temperature thermal conductivities are (84+/-17) W/mK and (59+/-18) W/mK, respectively. For 2L MoS2 and MoSe2, we obtain values of (77+/-25) W/mK and (42+/-13) W/mK. Crucially, the interfacial thermal conductance is found to be of order 0.1-1 MW/m2K, substantially smaller than previously assumed, a finding that has important implications for design and modeling of electronic devices.

preprint2015arXiv

Near-field photocurrent nanoscopy on bare and encapsulated graphene

Opto-electronic devices utilizing graphene have already demonstrated unique capabilities, which are much more difficult to realize with conventional technologies. However, the requirements in terms of material quality and uniformity are very demanding. A major roadblock towards high-performance devices are the nanoscale variations of graphene properties, which strongly impact the macroscopic device behaviour. Here, we present and apply opto-electronic nanoscopy to measure locally both the optical and electronic properties of graphene devices. This is achieved by combining scanning near-field infrared nanoscopy with electrical device read-out, allowing infrared photocurrent mapping at length scales of tens of nanometers. We apply this technique to study the impact of edges and grain boundaries on spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can also be applied to encapsulated graphene/hexagonal boron nitride (h-BN) devices, where we observe strong charge build-up near the edges, and also address a device solution to this problem. The technique enables nanoscale characterization for a broad range of common graphene devices without the need of special device architectures or invasive graphene treatment.

preprint2015arXiv

Photonic and plasmonic guiding modes in graphene-silicon photonic crystals

We report systematic studies of plasmonic and photonic guiding modes in large-area chemical-vapor-deposition-grown graphene on nanostructured silicon substrates. Light interaction in graphene with substrate photonic crystals can be classified into four distinct regimes depending on the photonic crystal lattice constant and the various modal wavelengths (i.e. plasmonic, photonic and free-space). By optimizing the design of the substrate, these resonant modes can magnify the graphene absorption in infrared wavelength, for efficient modulators, filters, sensors and photodetectors on silicon photonic platforms.

preprint2015arXiv

Tuning the Electronic Structure of Monolayer Graphene/MoS2 van der Waals Heterostructures via Interlayer Twist

We directly measure the electronic structure of twisted graphene/MoS2 van der Waals heterostructures, in which both graphene and MoS2 are monolayers. We use cathode lens microscopy and microprobe angle-resolved photoemission spectroscopy measurements to image the surface, determine twist angle, and map the electronic structure of these artificial heterostructures. For monolayer graphene on monolayer MoS2, the resulting band structure reveals the absence of hybridization between the graphene and MoS2 electronic states. Further, the graphene-derived electronic structure in the heterostructures remains intact, irrespective of the twist angle between the two materials. In contrast, however, the electronic structure associated with the MoS2 layer is found to be twist-angle dependent; in particular, the relative difference in the energy of the valence band maximum at Γ and K of the MoS2 layer varies from approximately 0 to 0.2 eV. Our results suggest that monolayer MoS2 within the heterostructure becomes predominantly an indirect bandgap system for all twist angles except in the proximity of 30 degrees. This result enables potential bandgap engineering in van der Waals heterostructures comprised of monolayer structures.

preprint2014arXiv

Atomically thin p-n junctions with van der Waals heterointerfaces

Semiconductor p-n junctions are essential building blocks for modern electronics and optoelectronics. In conventional semiconductors, a p-n junction produces depletion regions of free charge carriers at equilibrium and built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes defined by the spatial extent of this region. With the advent of atomically thin van der Waals (vdW) materials and their heterostructures, we are now able to realize a p-n junction at the ultimate quantum limit. In particular, vdW junctions composed of p- and n-type semiconductors each just one unit cell thick are predicted to exhibit completely different charge transport characteristics than bulk junctions. Here we report the electronic and optoelectronic characterization of atomically thin p-n heterojunctions fabricated using vdW assembly of transition metal dichalcogenides (TMDCs). Across the p-n interface, we observe gate-tuneable diode-like current rectification and photovoltaic response. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances collection of the photoexcited carriers. The atomically scaled vdW p-n heterostructures presented here constitute the ultimate quantum limit for functional electronic and optoelectronic components.

preprint2014arXiv

High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and inter-chip communications. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption and modulation depth. However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties. Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cut-off frequency of 1.2 GHz.

preprint2014arXiv

Highly confined low-loss plasmons in graphene-boron nitride heterostructures

Graphene plasmons were predicted to possess ultra-strong field confinement and very low damping at the same time, enabling new classes of devices for deep subwavelength metamaterials, single-photon nonlinearities, extraordinarily strong light-matter interactions and nano-optoelectronic switches. While all of these great prospects require low damping, thus far strong plasmon damping was observed, with both impurity scattering and many-body effects in graphene proposed as possible explanations. With the advent of van der Waals heterostructures, new methods have been developed to integrate graphene with other atomically flat materials. In this letter we exploit near-field microscopy to image propagating plasmons in high quality graphene encapsulated between two films of hexagonal boron nitride (h-BN). We determine dispersion and particularly plasmon damping in real space. We find unprecedented low plasmon damping combined with strong field confinement, and identify the main damping channels as intrinsic thermal phonons in the graphene and dielectric losses in the h-BN. The observation and in-depth understanding of low plasmon damping is the key for the development of graphene nano-photonic and nano-optoelectronic devices.

preprint2014arXiv

Measurement of Collective Dynamical Mass of Dirac Fermions in Graphene

Individual electrons in graphene behave as massless quasiparticles. In surprising twist, it is inferred from plasmonic investigations that collectively excited graphene electrons must exhibit non-zero mass and its inertial acceleration is essential for graphene plasmonics. Despite such importance, this collective mass has defied direct unequivocal measurement. It may be directly measured by accelerating it with a time-varying voltage and quantifying the phase delay of the resulting current; this voltage-current phase relation would manifest as kinetic inductance, representing the collective inertia's reluctance to accelerate. However, at optical (infrared) frequencies phase measurement of current is generally difficult and at microwave frequencies the inertial phase delay has been buried under electron scattering. Here we directly, precisely measure the kinetic inductance, thus, collective mass, by combining innovative device engineering that reduces electron scattering and delicate microwave phase measurements. Particularly, encapsulation of graphene between hexagonal-boron-nitride layers, one-dimensional edge contacts, and a proximate top gate configured as microwave ground together enable resolving the inertial phase delay from the electron scattering. Beside the fundamental importance, the kinetic inductance demonstrated here to be orders-of-magnitude larger than magnetic inductance can dramatically miniaturize radio-frequency integrated circuits. Moreover, its bias-dependency heralds a solid-state voltage-controlled inductor to complement the prevalent voltage-controlled capacitor.

preprint2014arXiv

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the valley Hall effect. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, particularly at low temperature (T), which has hampered efforts to observe its intrinsic quantum transport behaviors. Potential sources of disorder and scattering include both defects such as sulfur vacancies in the MoS2 itself, and extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering and approach the intrinsic limit, we developed a van der Waals (vdW) heterostructure device platform where MoS2 layers are fully encapsulated within hexagonal boron nitride (hBN), and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Multi-terminal magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000 cm2/Vs for 6-layer MoS2 at low T. Comparison to theory shows a decrease of 1-2 orders of magnitude in the density of charged impurities, indicating that performance at low T in previous studies was limited by extrinsic factors rather than defects in the MoS2. We also observed Shubnikov-de Haas (SdH) oscillations for the first time in high-mobility monolayer and few-layer MoS2. This novel device platform therefore opens up a new way toward measurements of intrinsic properties and the study of quantum transport phenomena in 2D semiconducting materials.

preprint2014arXiv

Tunable Fractional Quantum Hall Phases in Bilayer Graphene

Symmetry breaking in a quantum system often leads to complex emergent behavior. In bilayer graphene (BLG), an electric field applied perpendicular to the basal plane breaks the inversion symmetry of the lattice, opening a band gap at the charge neutrality point. In a quantizing magnetic field electron interactions can cause spontaneous symmetry breaking within the spin and valley degrees of freedom, resulting in quantum Hall states (QHS) with complex order. Here we report fractional quantum Hall states (FQHS) in bilayer graphene which show phase transitions that can be tuned by a transverse electric field. This result provides a model platform to study the role of symmetry breaking in emergent states with distinct topological order.

preprint2014arXiv

Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2

We have measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T. At low doping densities, the neutral and charged excitons shift linearly with field strength at a rate of $\mp$ 0.12 meV/T for emission arising, respectively, from the K and K' valleys. The opposite sign for emission from different valleys demonstrates lifting of the valley degeneracy. The magnitude of the Zeeman shift agrees with predicted magnetic moments for carriers in the conduction and valence bands. The relative intensity of neutral and charged exciton emission is modified by the magnetic field, reflecting the creation of field-induced valley polarization. At high doping levels, the Zeeman shift of the charged exciton increases to $\mp$ 0.18 meV/T. This enhancement is attributed to many-body effects on the binding energy of the charged excitons.

preprint2013arXiv

Controlling the Spontaneous Emission Rate of Monolayer MoS$_2$ in a Photonic Crystal Nanocavity

We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS$_2$) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) mapping shows strong variations of emission when the MoS$_2$ monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization dependences of the cavity-coupled MoS$_2$ emission show a more than 5 times stronger extracted PL intensity than the un-coupled emission, which indicates an underlying cavity mode Purcell enhancement of MoS$_2$ SE rate exceeding a factor of 70.

preprint2013arXiv

Enhanced Photodetection in Graphene-Integrated Photonic Crystal Cavity

We demonstrate the controlled enhancement of photoresponsivity in a graphene photodetector by coupling to slow light modes in a long photonic crystal linear defect cavity. Near the Brillouin zone (BZ) boundary, spectral coupling of multiple cavity modes results in broad-band photocurrent enhancement from 1530 nm to 1540 nm. Away from the BZ boundary, individual cavity resonances enhance the photocurrent eight-fold in narrow resonant peaks. Optimization of the photocurrent via critical coupling of the incident field with the graphene-cavity system is discussed. The enhanced photocurrent demonstrates the feasibility of a wavelength-scale graphene photodetector for efficient photodetection with high spectral selectivity and broadband response.

preprint2013arXiv

Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene

The most celebrated property of the quantum spin Hall effect is the presence of spin-polarized counter-propagating edge states. This novel edge state configuration has also been predicted to occur in graphene when spin-split electron- and hole-like Landau levels are forced to cross at the edge of the sample. In particular, a quantum spin Hall analogue has been predicted at ν=0 in bilayer graphene if the ground state is a spin ferromagnet. Previous studies have demonstrated that the bilayer ν=0 state is an insulator in a perpendicular magnetic field, though the exact nature of this state has not been identified. Here we present measurements of the ν=0 state in a dual-gated bilayer graphene device in tilted magnetic field. The application of an in-plane magnetic field and perpendicular electric field allows us to map out a full phase diagram of the ν=0 state as a function of experimentally tunable parameters. At large in-plane magnetic field we observe a quantum phase transition to a metallic state with conductance of order 4e^2/h, consistent with predictions for the ferromagnet.

preprint2013arXiv

Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates

The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high levels of strain. In this work, we fabricate graphene field-effect transistors (GFETs) on flexible substrates from graphene grown by chemical vapor deposition (CVD). Our devices demonstrate unity-current-gain frequencies, fT, and unity-power-gain frequencies, fmax, up to 10.7 and 3.7 GHz, respectively, with strain limits of 1.75%. These devices represent the only reported technology to achieve gigahertz-frequency power gain at strain levels above 0.5%. As such, they demonstrate the potential of CVD graphene to enable a broad range of flexible electronic technologies which require both high-flexibility and RF operation.

preprint2013arXiv

Graphene Metallization of High-Stress Silicon Nitride Resonators for Electrical Integration

High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing and signal processing. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30 % on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electro-static tuning of the frequency by up to 1 % per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride.

preprint2013arXiv

Measurement of mobility in dual-gated MoS2 transistors

Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50 cm^2/Vs for few-layer MoS2[1, 2]. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50 cm^2/Vs for few-layer MoS2[1, 2]. However, greatly increased mobility - as high as 900 cm^2/Vs - was recently reported for monolayer MoS2 by Radisavljevic, et al.[Ref. 3; see also Refs. 4-6], and for multilayer MoS2 by others[7, 8], in devices covered by a high-kappa dielectric layer and a metal top gate. Similar increases were reported for electrolyte top-gated MoS2[9]. A puzzling common aspect of these reports is that the double-gated devices consistently show much higher mobility when measured using the weakly-coupled back gate (typically 300 nm of SiO2) than using the strongly-coupled top gate. While this difference might be attributed to a different quality of the top and bottom surfaces, the large discrepancy motivates close examination of the measurement techniques to rule out spurious effects. Notably, it has been shown that the mobility may be greatly overestimated in this geometry[10, 11]. There is good evidence that this is the case here[4-9]; below we discuss Radisavljevic, et al.[4] as an illustrative example.

preprint2013arXiv

Optical Third-Harmonic Generation in Graphene

We report strong third-harmonic generation (THG) in monolayer graphene grown by chemical vapor deposition (CVD) and transferred to an amorphous silica (glass) substrate; the photon energy is in three-photon resonance with the exciton-shifted van Hove singularity at the M-point of graphene. Our polarization- and azimuthal-rotation-dependent measurements confirm the expected symmetry properties for this nonlinear process. Since the third-harmonic signal exceeds that of bulk glass by more than two orders of magnitude, the signal contrast permits background-free scanning of graphene and provides insight into the structural properties of graphene.

preprint2013arXiv

Tunable electronic correlation effects in nanotube-light interactions

Electronic many-body correlation effects in one-dimensional (1D) systems such as carbon nanotubes have been predicted to modify strongly the nature of photoexcited states. Here we directly probe this effect using broadband elastic light scattering from individual suspended carbon nanotubes under electrostatic gating conditions. We observe significant shifts in optical transition energies, as well as line broadening, as the carrier density is increased. The results demonstrate the differing role of screening of many-body electronic interactions on the macroscopic and microscopic length scales, a feature inherent to quasi-1D systems. Our findings further demonstrate the possibility of electrical tuning of optical transitions and provide a basis for understanding of various optical phenomena in carbon nanotubes and other quasi-1D systems in the presence of charge carrier doping.

preprint2013arXiv

Tuning many-body interactions in graphene: The effects of doping on excitons and carrier lifetimes

The optical properties of graphene are strongly affected by electron-electron (e-e) and electron-hole (e-h) interactions. Here we tune these many-body interactions through varying the density of free charge carriers. Measurements from the infrared to the ultraviolet reveal significant changes in the optical conductivity of graphene for both electron and hole doping. The shift, broadening, and modification in shape of the saddle-point exciton resonance reflect strong screening of the many-body interactions by the carriers, as well as changes in quasi-particle lifetimes. Ab initio calculations by the GW Bethe-Salpeter equation (GW-BSE), which take into account modification of both the repulsive e-e and the attractive e-h interactions, provide excellent agreement with experiment. Understanding the optical properties and high-energy carrier dynamics of graphene over a wide range of doping is crucial for both fundamental graphene physics and for emerging applications of graphene in photonics.

preprint2012arXiv

Graphene growth on h-BN by Molecular Beam Epitaxy

The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.

preprint2012arXiv

High-Contrast Electro-Optic Modulation of a Photonic Crystal Nanocavity by Electrical Gating of Graphene

We demonstrate a high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A high quality (Q) factor air-slot nanocavity design is employed for high overlap between the optical field and graphene sheet. Tuning of graphene's Fermi level up to 0.8 eV enables efficient control of its complex dielectric constant, which allows modulation of the cavity reflection in excess of 10 dB for a swing voltage of only 1.5 V. We also observe a controllable resonance wavelength shift close to 2 nm around a wavelength of 1570 nm and a Q factor modulation in excess of three. These observations allow cavity-enhanced measurements of the graphene complex dielectric constant under different chemical potentials, in agreement with a theoretical model of the graphene dielectric constant under gating. This graphene-based nanocavity modulation demonstrates the feasibility of high-contrast, low-power frequency-selective electro-optic nanocavity modulators in graphene-integrated silicon photonic chips.

preprint2012arXiv

Observation of tightly bound trions in monolayer MoS2

Two-dimensional (2D) atomic crystals, such as graphene and transition-metal dichalcogenides, have emerged as a new class of materials with remarkable physical properties. In contrast to graphene, monolayer MoS2 is a non-centrosymmetric material with a direct energy gap. Strong photoluminescence, a current on-off ratio exceeding 10^8 in field-effect transistors, and efficient valley and spin control by optical helicity have recently been demonstrated in this material. Here we report the spectroscopic identification in doped monolayer MoS2 of tightly bound negative trions, a quasi-particle composed of two electrons and a hole. These quasi-particles, which can be created with valley and spin polarized holes, have no analogue in other semiconducting materials. They also possess a large binding energy (~ 20 meV), rendering them significant even at room temperature. Our results open up new avenues both for fundamental studies of many-body interactions and for opto-electronic and valleytronic applications in 2D atomic crystals.

preprint2012arXiv

Regenerative oscillation and four-wave mixing in graphene optoelectronics

The unique linear and massless band structure of graphene, in a purely two-dimensional Dirac fermionic structure, have led to intense research spanning from condensed matter physics to nanoscale device applications covering the electrical, thermal, mechanical and optical domains. Here we report three consecutive first-observations in graphene-silicon hybrid optoelectronic devices: (1) ultralow power resonant optical bistability; (2) self-induced regenerative oscillations; and (3) coherent four-wave mixing, all at a few femtojoule cavity recirculating energies. These observations, in comparison with control measurements with solely monolithic silicon cavities, are enabled only by the dramatically-large and chi(3) nonlinearities in graphene and the large Q/V ratios in wavelength-localized photonic crystal cavities. These results demonstrate the feasibility and versatility of hybrid two-dimensional graphene-silicon nanophotonic devices for next-generation chip-scale ultrafast optical communications, radio-frequency optoelectronics, and all-optical signal processing.

preprint2012arXiv

Spin and valley quantum Hall ferromagnetism in graphene

In a graphene Landau level (LL), strong Coulomb interactions and the fourfold spin/valley degeneracy lead to an approximate SU(4) isospin symmetry. At partial filling, exchange interactions can spontaneously break this symmetry, manifesting as additional integer quantum Hall plateaus outside the normal sequence. Here we report the observation of a large number of these quantum Hall isospin ferromagnetic (QHIFM) states, which we classify according to their real spin structure using temperature-dependent tilted field magnetotransport. The large measured activation gaps confirm the Coulomb origin of the broken symmetry states, but the order is strongly dependent on LL index. In the high energy LLs, the Zeeman effect is the dominant aligning field, leading to real spin ferromagnets with Skyrmionic excitations at half filling, whereas in the `relativistic' zero energy LL, lattice scale anisotropies drive the system to a spin unpolarized state, likely a charge- or spin-density wave.

preprint2010arXiv

Anomalous Lattice Vibrations of Single and Few-Layer MoS2

Molybdenum disulfide (MoS2) of single and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic-force microscopy. Two Raman modes, E12g and A1g, exhibited sensitive thickness dependence, with the frequency of the former decreasing and that of the latter increasing with thickness. The results provide a convenient and reliable means for determining layer thickness with atomic-level precision. The opposite direction of the frequency shifts, which cannot be explained solely by van der Waals interlayer coupling, is attributed to Coulombic interactions and possible stacking-induced changes of the intralayer bonding. This work exemplifies the evolution of structural parameters in layered materials in changing from the 3-dimensional to the 2-dimensional regime.

preprint2010arXiv

Atomically thin MoS2: A new direct-gap semiconductor

The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk material, the MoS2 monolayer emits light strongly. The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 1000 compared with the bulk material.

preprint2010arXiv

Excitons and high-order optical transitions in individual carbon nanotubes

We examine the excitonic nature of high-lying optical transitions in single-walled carbon nanotubes by means of Rayleigh scattering spectroscopy. A careful analysis of the principal transitions of individual semiconducting and metallic nanotubes reveals that in both cases the lineshape is consistent with an excitonic model, but not one of free-carriers. For semiconducting species, side-bands are observed at ~200 meV above the third and fourth optical transitions. These features are ascribed to exciton-phonon bound states. Such side-bands are not apparent for metallic nanotubes,as expected from the reduced strength of excitonic interactions in these systems.

preprint2010arXiv

Radio frequency electrical transduction of graphene mechanical resonators

We report radio frequency (rf) electrical readout of graphene mechanical resonators. The mechanical motion is actuated and detected directly by using a vector network analyzer, employing a local gate to minimize parasitic capacitance. A resist-free doubly clamped sample with resonant frequency ~ 34 MHz, quality factor ~ 10000 at 77 K, and signal-to-background ratio of over 20 dB is demonstrated. In addition to being over two orders of magnitude faster than the electrical rf mixing method, this technique paves the way for use of graphene in rf devices such as filters and oscillators.

preprint2009arXiv

Performance of Monolayer Graphene Nanomechanical Resonators with Electrical Readout

The enormous stiffness and low density of graphene make it an ideal material for nanoelectromechanical (NEMS) applications. We demonstrate fabrication and electrical readout of monolayer graphene resonators, and test their response to changes in mass and temperature. The devices show resonances in the MHz range. The strong dependence of the resonant frequency on applied gate voltage can be fit to a membrane model, which yields the mass density and built-in strain. Upon removal and addition of mass, we observe changes in both the density and the strain, indicating that adsorbates impart tension to the graphene. Upon cooling, the frequency increases; the shift rate can be used to measure the unusual negative thermal expansion coefficient of graphene. The quality factor increases with decreasing temperature, reaching ~10,000 at 5 K. By establishing many of the basic attributes of monolayer graphene resonators, these studies lay the groundwork for applications, including high-sensitivity mass detectors.

James Hone

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68 published item(s)

Observing unconventional superconductivity via kinetic inductance in Weyl semimetal MoTe$_2$

Evidence for Exciton Crystals in a 2D Semiconductor Heterotrilayer

A new flavor of correlation and superconductivity in small twist-angle trilayer graphene

Dark-exciton driven energy funneling into dielectric inhomogeneities in two-dimensional semiconductors

Dissipation-enabled hydrodynamic conductivity in a tunable bandgap semiconductor

Electron spin resonance and collective excitations in magic-angle twisted bilayer graphene

Miniaturizing transmon qubits using van der Waals materials

P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3

Quadrupolar excitons in a tunnel-coupled van der Waals heterotrilayer

Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Unzipping hBN with ultrashort mid-infrared pulses

Bilayer WSe$_2$ as a natural platform for interlayer exciton condensates in the strong coupling limit

Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides

Making high-quality quantum microwave devices with van der Waals superconductors

Moiré heterostructures as a condensed matter quantum simulator

Crossover between Strongly-coupled and Weakly-coupled Exciton Superfluids

Enhanced Superconductivity in Monolayer $T_d$-MoTe$_2$ with Tilted Ising Spin Texture

Odd- and even-denominator fractional quantum Hall states in monolayer WSe$_2$

One-Dimensional Moiré Excitons in Transition-Metal Dichalcogenide Heterobilayers

Optical Measurement of Pseudo-Spin Texture of the Exciton Fine-Structure in Monolayer WSe2 within the Light Cone

Spatially mixed moiré excitons in two-dimensional van der Waals superlattices

Broadband optical parametric amplification by two-dimensional semiconductors

Low-loss composite photonic platform based on 2D semiconductor monolayers

Magic continuum in twisted bilayer WSe2

Electron optics with ballistic graphene junctions

Graphene mechanical oscillators with tunable frequency

High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering

Influence of the Substrate Material on the Optical Properties of Tungsten Diselenide Monolayers

Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2

Modulation of mechanical resonance by chemical potential oscillation in graphene

Multiple Hot-Carrier Collection in Photo-Excited Graphene Moire Superlattices

Strong interfacial exchange field in the graphene/EuS heterostructure

SU-8 clamped CVD graphene drum resonators

The hot pick-up technique for batch assembly of van der Waals heterostructures

Thermoelectric detection of propagating plasmons in graphene

Tunable Ultrafast Thermal Relaxation in Graphene Measured by Continuous-Wave Photomixing

Fractional fractal quantum Hall effect in graphene superlattices

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

Measurement of lateral and interfacial thermal conductivity of single- and bi-layer MoS2 and MoSe2 using refined optothermal Raman technique

Near-field photocurrent nanoscopy on bare and encapsulated graphene

Photonic and plasmonic guiding modes in graphene-silicon photonic crystals

Tuning the Electronic Structure of Monolayer Graphene/MoS2 van der Waals Heterostructures via Interlayer Twist

Atomically thin p-n junctions with van der Waals heterointerfaces

High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

Highly confined low-loss plasmons in graphene-boron nitride heterostructures

Measurement of Collective Dynamical Mass of Dirac Fermions in Graphene

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Tunable Fractional Quantum Hall Phases in Bilayer Graphene

Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2

Controlling the Spontaneous Emission Rate of Monolayer MoS$_2$ in a Photonic Crystal Nanocavity

Enhanced Photodetection in Graphene-Integrated Photonic Crystal Cavity

Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene

Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates

Graphene Metallization of High-Stress Silicon Nitride Resonators for Electrical Integration

Measurement of mobility in dual-gated MoS2 transistors

Optical Third-Harmonic Generation in Graphene

Tunable electronic correlation effects in nanotube-light interactions

Tuning many-body interactions in graphene: The effects of doping on excitons and carrier lifetimes

Graphene growth on h-BN by Molecular Beam Epitaxy

High-Contrast Electro-Optic Modulation of a Photonic Crystal Nanocavity by Electrical Gating of Graphene

Observation of tightly bound trions in monolayer MoS2

Regenerative oscillation and four-wave mixing in graphene optoelectronics

Spin and valley quantum Hall ferromagnetism in graphene

Anomalous Lattice Vibrations of Single and Few-Layer MoS2

Atomically thin MoS2: A new direct-gap semiconductor

Excitons and high-order optical transitions in individual carbon nanotubes

Radio frequency electrical transduction of graphene mechanical resonators

Performance of Monolayer Graphene Nanomechanical Resonators with Electrical Readout