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Thomas Szkopek

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Published work

5 published item(s)

preprint2020arXiv

Quantitative Measurements of Giant and Quantized Microwave Faraday Rotation

We report {\it quantitative} microwave Faraday rotation measurements conducted with a high-mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs semiconductor heterostructure. In a magnetic field, the Hall effect and the Faraday effect arise from the action of Lorentz force on electrons in the 2DEG. As with the Hall effect, a classical Faraday effect is observed at low magnetic field as well as a quantized Faraday effect at high magnetic field. The high electron mobility of the 2DEG enables a giant single-pass Faraday rotation of $θ_F^{max} \simeq 45^\circ$ $(\simeq0.8$~rad) to be achieved at a modest magnetic field of $B \simeq 100$~mT. In the quantum regime, we find that the Faraday rotation $θ_F$ is quantized in units of $α^*= 2.80(4)α$, where $α\simeq 1/137$ is the fine structure constant. The enhancement in rotation quantum $α^* > α$ is attributed to electromagnetic confinement within a waveguide structure.

preprint2018arXiv

Non-Classical Longitudinal Magneto-Resistance in Anisotropic Black Phosphorus

Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and the source-drain (S-D) axis of the device. The crystallographic directions of the bP crystal were determined by Raman spectroscopy, with the zigzag axis found within 5° of the S-D axis, and the armchair axis in the orthogonal planar direction. A transverse magneto-resistance (TMR) as well as a classically-forbidden longitudinal magneto-resistance (LMR) are observed. Both are found to be strongly anisotropic and non-monotonic with increasing in-plane field. Surprisingly, the relative magnitude (in %) of the positive LMR is larger than the TMR above $\sim$32 T. Considering the known anisotropy of bP whose zigzag and armchair effective masses differ by a factor of approximately seven, our experiment strongly suggests this LMR to be a consequence of the anisotropic Fermi surface of bP.

preprint2013arXiv

Terahertz Magnetoplasmon Energy Concentration and Splitting in Graphene PN Junctions

Terahertz plasmons and magnetoplasmons propagating along electrically and chemically doped graphene p-n junctions are investigated. It is shown that such junctions support non-reciprocal magnetoplasmonic modes which get concentrated at the middle of the junction in one direction and split away from the middle of the junction in the other direction under the application of an external static magnetic field. This phenomenon follows from the combined effects of circular birefringence and carrier density non-uniformity. It can be exploited for the realization of plasmonic isolators.

preprint2005arXiv

Eigenvalue Estimation of Differential Operators

We demonstrate how linear differential operators could be emulated by a quantum processor, should one ever be built, using the Abrams-Lloyd algorithm. Given a linear differential operator of order 2S, acting on functions psi(x_1,x_2,...,x_D) with D arguments, the computational cost required to estimate a low order eigenvalue to accuracy Theta(1/N^2) is Theta((2(S+1)(1+1/nu)+D)log N) qubits and O(N^{2(S+1)(1+1/nu)} (D log N)^c) gate operations, where N is the number of points to which each argument is discretized, nu and c are implementation dependent constants of O(1). Optimal classical methods require Theta(N^D) bits and Omega(N^D) gate operations to perform the same eigenvalue estimation. The Abrams-Lloyd algorithm thereby leads to exponential reduction in memory and polynomial reduction in gate operations, provided the domain has sufficiently large dimension D > 2(S+1)(1+1/nu). In the case of Schrodinger's equation, ground state energy estimation of two or more particles can in principle be performed with fewer quantum mechanical gates than classical gates.

preprint2004arXiv

Single photo-electron trapping, storage, and detection in a one-electron quantum dot

There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We report the filling of such a quantum dot by a single photo-electron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photo-electron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photo-electron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photo-electron detector could allow for information transfer between flying photon qubits and stored electron qubits.