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Eli Yablonovitch

Eli Yablonovitch appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mes-hallEmerging Technologiesquant-phcond-mat.mtrl-scimath.OC

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Published work

11 published item(s)

preprint2022arXiv

Equivalence of coupled parametric oscillator dynamics to Lagrange multiplier primal-dual optimization

There has been a recent surge of interest in physics-based solvers for combinatorial optimization problems. We present a dynamical solver for the Ising problem that is comprised of a network of coupled parametric oscillators and show that it implements Lagrange multiplier constrained optimization. We show that the pump depletion effect, which is intrinsic to parametric oscillators, enforces binary constraints and enables the system's continuous analog variables to converge to the optimal binary solutions to the optimization problem. Moreover, there is an exact correspondence between the equations of motion for the coupled oscillators and the update rules in the primal-dual method of Lagrange multipliers. Though our analysis is performed using electrical LC oscillators, it can be generalized to any system of coupled parametric oscillators. We simulate the dynamics of the coupled oscillator system and demonstrate that the performance of the solver on a set of benchmark problems is comparable to the best-known results obtained by digital algorithms in the literature.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Physics Successfully Implements Lagrange Multiplier Optimization

Optimization is a major part of human effort. While being mathematical, optimization is also built into physics. For example, physics has the principle of Least Action, the principle of Minimum Entropy Generation, and the Variational Principle. Physics also has physical annealing which, of course, preceded computational Simulated Annealing. Physics has the Adiabatic Principle, which in its quantum form is called Quantum Annealing. Thus, physical machines can solve the mathematical problem of optimization, including constraints. Binary constraints can be built into the physical optimization. In that case the machines are digital in the same sense that a flip-flop is digital. A wide variety of machines have had recent success at optimizing the Ising magnetic energy. We demonstrate in this paper that almost all those machines perform optimization according to the Principle of Minimum Entropy Generation as put forth by Onsager. Further, we show that this optimization is in fact equivalent to Lagrange multiplier optimization for constrained problems. We find that the physical gain coefficients which drive those systems actually play the role of the corresponding Lagrange Multipliers.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

HAMR Thermal Reliability via Inverse Electromagnetic Design

Heat-Assisted Magnetic Recording (HAMR) has promise to allow for data writing in hard disks of beyond 1 Tb/in2 areal density, by temporarily heating the area of a single datum to its Curie temperature while simultaneously applying a magnetic field from a conventional electromagnet. However, the metallic optical antenna or near-field transducer (NFT) used to apply the nano-scale heating to the media may self-heat by several hundreds of degrees. With the NFT reaching such extreme temperatures, demonstrations of HAMR technology observe write-head lifetimes that are orders of magnitude less than that required for commercial product. Hence, thermal reliability of the NFT is of upmost importance. In this paper, we first derive fundamental limits on the self-heating of the NFT to drive design choices for low temperature operation. Next, we employ Inverse Electromagnetic Design software, which provides deterministic gradient-based optimization of electromagnetic structures with thousands of degrees of freedom using the adjoint method. The Inverse Design software solves for unintuitive solutions to Maxwells equations, and we present computationally generated structures for HAMR write-heads that offer a 40 percent or 170 C reduction in NFT self-heating compared to typical industry designs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Intermediate Mirrors to Reach Theoretical Efficiency Limits of Multi-Bandgap Solar Cells

Creating a single bandgap solar cell that approaches the Shockley-Queisser limit requires a highly reflective rear mirror. This mirror enhances the voltage of the solar cell by providing photons with multiple opportunities for escaping out the front surface. Efficient external luminescence is a pre-requisite for high voltage. Intermediate mirrors in a multijunction solar cell can enhance the voltage for each cell in the stack. These intermediate mirrors need to have the added function of transmitting the below bandgap photons to the next cell in the stack. In this work, we quantitatively establish the efficiency increase possible with the use of intermediate selective reflectors between cells in a tandem stack. The absolute efficiency increase can be up to ~6% in dual bandgap cells with optimal intermediate and rear mirrors. A practical implementation of an intermediate selective mirror is an air gap sandwiched by antireflection coatings. The air gap provides perfect reflection for angles outside the escape cone, and the antireflection coating transmits angles inside the escape cone. As the incoming sunlight is within the escape cone, it is transmitted on to the next cell, while most of the internally trapped luminescence is reflected.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Pronounced Effect of pn-Junction Dimensionality on Tunnel Switch Threshold Shape

Designing tunneling junctions with abrupt on-off characteristics and high current densities is critical for many different devices including backward diodes and tunneling field effect transistors (TFETs). It is possible to get a sharp, high conductance on/off transition by exploiting the sharp step in the density of states at band edges. The nature of the density of states, is strongly dependent on quantum dimensionality. To know the current/voltage curve requires us to specify both the n-side dimensionality and the p-side dimensionality of pn junctions. We find that a typical bulk 3d-3d tunneling pn junction has only a quadratic turn-on function, while a pn junction consisting of two overlapping quantum wells (2d-2d) would have the preferred step function response. We consider nine physically distinguishable possibilities: 3d-3d, 2d-2dedge, 1d-1dend, 2d-3d, 1d-2d, 0d-1d, 2d-2dface, 1d-1dedge and 0d-0d. Thus we introduce the obligation to specify the dimensionality on either side of pn junctions. Quantum confinement, or reduced dimensionality on each side of a pn junction has the added benefit of significantly increasing the tunnel conductance at the turn-on threshold.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures, but in principle with atomically sharp interfaces, no interdiffusion of atoms, digitally controlled layered components and no lattice parameter constraints. Nonetheless, the optoelectronic behavior of this new type of van der Waals (vdW) semiconductor heterostructure is unknown at the single-layer limit. Specifically, it is experimentally unknown whether the optical transitions will be spatially direct or indirect in such hetero-bilayers. Here, we investigate artificial semiconductor heterostructures built from single layer WSe2 and MoS2 building blocks. We observe a large Stokes-like shift of ~100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment with spatially direct absorption but spatially indirect emission. Notably, the photoluminescence intensity of this spatially indirect transition is strong, suggesting strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN (h-BN) dielectric layers into the vdW gap. The generic nature of this interlayer coupling consequently provides a new degree of freedom in band engineering and is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Light Trapping Textures Designed by Electromagnetic Optimization for Sub-Wavelength Thick Solar Cells

Light trapping in solar cells allows for increased current and voltage, as well as reduced materials cost. It is known that in geometrical optics, a maximum 4n^2 absorption enhancement factor can be achieved by randomly texturing the surface of the solar cell, where n is the material refractive index. This ray-optics absorption enhancement limit only holds when the thickness of the solar cell is much greater than the optical wavelength. In sub-wavelength thin films, the fundamental questions remain unanswered: (1) what is the sub-wavelength absorption enhancement limit and (2) what surface texture realizes this optimal absorption enhancement? We turn to computational electromagnetic optimization in order to design nanoscale textures for light trapping in sub-wavelength thin films. For high-index thin films, in the weakly absorbing limit, our optimized surface textures yield an angle- and frequency-averaged enhancement factor ~39. They perform roughly 30% better than randomly textured structures, but they fall short of the ray optics enhancement limit of 4n^2 ~ 50.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Intense Internal and External Fluorescence as Solar Cells Approach the Shockley-Queisser Efficiency Limit

Absorbed sunlight in a solar cell produces electrons and holes. But, at the open circuit condition, the carriers have no place to go. They build up in density and, ideally, they emit external fluorescence that exactly balances the incoming sunlight. Any additional non-radiative recombination impairs the carrier density buildup, limiting the open-circuit voltage. At open-circuit, efficient external fluorescence is an indicator of low internal optical losses. Thus efficient external fluorescence is, counter-intuitively, a necessity for approaching the Shockley-Queisser efficiency limit. A great Solar Cell also needs to be a great Light Emitting Diode. Owing to the narrow escape cone for light, efficient external emission requires repeated attempts, and demands an internal luminescence efficiency >>90%.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Circuit Analysis in Metal-Optics

We provide electrical circuit descriptions for bulk plasmons, single surface plasmons, and parallel-plate plasmons. Simple circuits can reproduce the exactly known frequency versus wave-vector dispersion relations for all these cases, with reasonable accuracy. The circuit paradigm directly provides a characteristic wave-impedance, Zo, that is rarely discussed in the context of plasmonics. The case of a single-surface-plasmon is particularly interesting since it can be modeled as a transmission line, even though there is no return current conductor. The capacitance/unit length and the Faraday inductance/unit length, of a flat metal surface, are C'=2epsilon_okW, and L'=epsilon_o/2kW respectively, (where k is wave-vector, and W is the width of the flat metal surface). We believe that many other metal-optic geometries can be described within the circuit paradigm, with the prerequisite that the distributed capacitance and inductance must be calculated for each particular geometry

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Eigenvalue Estimation of Differential Operators

We demonstrate how linear differential operators could be emulated by a quantum processor, should one ever be built, using the Abrams-Lloyd algorithm. Given a linear differential operator of order 2S, acting on functions psi(x_1,x_2,...,x_D) with D arguments, the computational cost required to estimate a low order eigenvalue to accuracy Theta(1/N^2) is Theta((2(S+1)(1+1/nu)+D)log N) qubits and O(N^{2(S+1)(1+1/nu)} (D log N)^c) gate operations, where N is the number of points to which each argument is discretized, nu and c are implementation dependent constants of O(1). Optimal classical methods require Theta(N^D) bits and Omega(N^D) gate operations to perform the same eigenvalue estimation. The Abrams-Lloyd algorithm thereby leads to exponential reduction in memory and polynomial reduction in gate operations, provided the domain has sufficiently large dimension D > 2(S+1)(1+1/nu). In the case of Schrodinger's equation, ground state energy estimation of two or more particles can in principle be performed with fewer quantum mechanical gates than classical gates.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Single photo-electron trapping, storage, and detection in a one-electron quantum dot

There has been considerable progress in electro-statically emptying, and re-filling, quantum dots with individual electrons. Typically the quantum dot is defined by electrostatic gates on a GaAs/AlGaAs modulation doped heterostructure. We report the filling of such a quantum dot by a single photo-electron, originating from an individual photon. The electrostatic dot can be emptied and reset in a controlled fashion before the arrival of each photon. The trapped photo-electron is detected by a point contact transistor integrated adjacent to the electrostatic potential trap. Each stored photo-electron causes a persistent negative step in the transistor channel current. Such a controllable, benign, single photo-electron detector could allow for information transfer between flying photon qubits and stored electron qubits.

0 citations0 reviewsNo code linkedOpen access