Abstract

We report {\it quantitative} microwave Faraday rotation measurements conducted with a high-mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs semiconductor heterostructure. In a magnetic field, the Hall effect and the Faraday effect arise from the action of Lorentz force on electrons in the 2DEG. As with the Hall effect, a classical Faraday effect is observed at low magnetic field as well as a quantized Faraday effect at high magnetic field. The high electron mobility of the 2DEG enables a giant single-pass Faraday rotation of θFmax≃45∘θ_F^{max} \simeq 45^\circ (≃0.8(\simeq0.8~rad) to be achieved at a modest magnetic field of B≃100B \simeq 100~mT. In the quantum regime, we find that the Faraday rotation θFθ_F is quantized in units of α∗=2.80(4)αα^*= 2.80(4)α, where α≃1/137α\simeq 1/137 is the fine structure constant. The enhancement in rotation quantum α∗>αα^* > α is attributed to electromagnetic confinement within a waveguide structure.

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