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Researcher profile

T. Langer

T. Langer contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciMachine Learningphysics.med-phphysics.opticsquant-ph

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Published work

4 published item(s)

preprint2021arXiv

A patient-specific approach for quantitative and automatic analysis of computed tomography images in lung disease: application to COVID-19 patients

Quantitative metrics in lung computed tomography (CT) images have been widely used, often without a clear connection with physiology. This work proposes a patient-independent model for the estimation of well-aerated volume of lungs in CT images (WAVE). A Gaussian fit, with mean (Mu.f) and width (Sigma.f) values, was applied to the lower CT histogram data points of the lung to provide the estimation of the well-aerated lung volume (WAVE.f). Independence from CT reconstruction parameters and respiratory cycle was analysed using healthy lung CT images and 4DCT acquisitions. The Gaussian metrics and first order radiomic features calculated for a third cohort of COVID-19 patients were compared with those relative to healthy lungs. Each lung was further segmented in 24 subregions and a new biomarker derived from Gaussian fit parameter Mu.f was proposed to represent the local density changes. WAVE.f resulted independent from the respiratory motion in 80% of the cases. Differences of 1%, 2% and up to 14% resulted comparing a moderate iterative strength and FBP algorithm, 1 and 3 mm of slice thickness and different reconstruction kernel. Healthy subjects were significantly different from COVID-19 patients for all the metrics calculated. Graphical representation of the local biomarker provides spatial and quantitative information in a single 2D picture. Unlike other metrics based on fixed histogram thresholds, this model is able to consider the inter-and intra-subject variability. In addition, it defines a local biomarker to quantify the severity of the disease, independently of the observer.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Nonlinear down-conversion in a single quantum dot

Photonic quantum technologies$^1$, with applications in quantum communication, sensing as well as quantum simulation and computing, are on the verge of becoming commercially available. One crucial building block are tailored nanoscale integratable quantum light sources, matching the specific needs of use-cases. Several different approaches to realize solid-state quantum emitters$^2$ with high performance$^3$ have been pursued. However, the properties of the emitted single photons are always defined by the individual quantum light source and despite numerous quantum emitter tuning techniques$^{4-7}$, scalability is still a major challenge. Here we show an emitter-independent method to tailor and control the properties of the single photon emission. We demonstrate a laser-controlled down-conversion process from an excited state of a quantum three-level system$^8$. Starting from a biexciton state, a tunable control laser field defines a virtual state in a stimulated process. From there, spontaneous emission to the ground state leads to optically controlled single photon emission. Based on this concept, we demonstrate energy tuning of the single photon emission with a control laser field. The nature of the involved quantum states furthermore provides a unique basis for the future control of polarization and bandwidth, as predicted by theory$^{9,10}$. Our demonstration marks an important step towards tailored single photon emission from a photonic quantum system based on quantum optical principles.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain-driven InAs island growth on top of GaAs(111) nanopillars

We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars experimentally and theoretically. Catalyst-free molecular beam epitaxial growth of InAs at low temperatures on GaAs nanopillars results in InAs islands with diameters < 30 nm exhibiting predominantly rounded triangular in-plane shapes. The islands show a tendency to grow at positions displaced from the center towards the pillar edge. Atomistic molecular statics simulations evidence that triangular-prismatic islands centered to the pillar axis with diameters smaller than that of the nanopillars are energetically favored. Moreover, we reveal the existence of minimum-energy states for off-axis island positions, in agreement with the experiment. These findings are interpreted by evaluating the spatial strain distributions and the number of broken bonds of surface atoms as a measure for the surface energy. The preferred off-axis island positions can be understood in terms of an increased compliancy of the GaAs nanopillar beneath the island because of the vicinity of free surfaces, leading to a reduction of strain energy. The influence of surface steps on the energy of the system is addressed as well.

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preprint2019arXiv

InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A

Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(111)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(111)A substrate for nano-patterning of the substrate, yielding pillars with honeycomb and hexagonal arrangements and varied nearest neighbor distances. Substrate patterning is followed by MBE growth of InAs at temperatures of 150 - 350 C and growth rates of 0.011 nm/s and 0.11 nm/s. InAs growth in the form of nano-islands on the pillar tops is achieved by lowering the adatom migration length by choosing a low growth temperature of 150 C at the growth rate 0.011 nm/s. The choice of a higher growth rate of 0.11 nm/s results in higher InAs island nucleation and the formation of hillocks concentrated at the pillar bases due to a further reduction of adatom migration length. A common feature of the growth morphology for all other explored conditions is the formation of merged hillocks or pyramids with well-defined facets due to the presence of a concave surface curvature at the pillar bases acting as adatom sinks.

0 citations0 reviewsNo code linkedOpen access