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Sunghyun Kim

Sunghyun Kim contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2022arXiv

Efficient Strong Scaling Through Burst Parallel Training

As emerging deep neural network (DNN) models continue to grow in size, using large GPU clusters to train DNNs is becoming an essential requirement to achieving acceptable training times. In this paper, we consider the case where future increases in cluster size will cause the global batch size that can be used to train models to reach a fundamental limit: beyond a certain point, larger global batch sizes cause sample efficiency to degrade, increasing overall time to accuracy. As a result, to achieve further improvements in training performance, we must instead consider "strong scaling" strategies that hold the global batch size constant and allocate smaller batches to each GPU. Unfortunately, this makes it significantly more difficult to use cluster resources efficiently. We present DeepPool, a system that addresses this efficiency challenge through two key ideas. First, burst parallelism allocates large numbers of GPUs to foreground jobs in bursts to exploit the unevenness in parallelism across layers. Second, GPU multiplexing prioritizes throughput for foreground training jobs, while packing in background training jobs to reclaim underutilized GPU resources, thereby improving cluster-wide utilization. Together, these two ideas enable DeepPool to deliver a 1.2 - 2.3x improvement in total cluster throughput over standard data parallelism with a single task when the cluster scale is large.

preprint2022arXiv

Nuclear Magnetic Resonance for Arbitrary Spin Values in the Rotating Wave Approximation

In order to probe the transitions of a nuclear spin $s$ from one of its substate quantum numbers $m$ to another substate $m'$, the experimenter applies a magnetic field ${\bm B}_0$ in some particular direction, such along $\hat{\bm z}$, and then applies an weaker field ${\bm B}_1(t)$ that is oscillatory in time with the angular frequency $ω$, and is normally perpendicular to ${\bm B}_0$, such as ${\bm B}_1(t)=B_1\hat{\bm x}\cos(ωt)$. In the rotating wave approximation, ${\bm B}_1(t)=B_1[\hat{\bm x}\cos(ωt)+\hat{\bm y}\sin(ωt)]$. Although this problem is solved for spin $\frac{1}{2}$ in every quantum mechanics textbook, for the general spin $s$ case, its general solution has been published only for the overall probability of a transition between the states, but the time dependence of the probability of finding the nucleus in each of the substates has not previously been published. Here we present an elementary method to solve this problem exactly, and present figures for the time dependencies of the various substates states for a variety of initial substate probabilities for a variety of $s$ values. We found a new result: unlike the $s=\frac{1}{2}$ case, for which if the initial probability of finding the particle in one of the substates was 1, and the time dependence of the probabilities of each of the substates oscillates between 0 and 1, for higher spin values, the time dependencies of the probabilities finding the particle in each of its substates, which periodic, is considerably more complicated.

preprint2020arXiv

Assessing the defect tolerance of kesterite-inspired solar absorbers

Various thin-film I$_2$-II-IV-VI$_4$ photovoltaic absorbers derived from kesterite Cu$_2$ZnSn(S,Se)$_4$ have been synthesized, characterized, and theoretically investigated in the past few years. The availability of this homogeneous materials dataset is an opportunity to examine trends in their defect properties and identify criteria to find new defect-tolerant materials in this vast chemical space. We find that substitutions on the Zn site lead to a smooth decrease in band tailing as the ionic radius of the substituting cation increases. Unfortunately, this substitution strategy does not ensure the suppression of deeper defects and non-radiative recombination. Trends across the full dataset suggest that Gaussian and Urbach band tails in kesterite-inspired semiconductors are two separate phenomena caused by two different antisite defect types. Deep Urbach tails are correlated with the calculated band gap narrowing caused by the (2I$_\mathrm{II}$+IV$_\mathrm{II}$) defect cluster. Shallow Gaussian tails are correlated with the energy difference between the kesterite and stannite polymorphs, which points to the role of (I$_\mathrm{II}$+II$_\mathrm{I}$) defect clusters involving Group IB and Group IIB atoms swapping across \textit{different} cation planes. This finding can explain why \textit{in-plane} cation disorder and band tailing are uncorrelated in kesterites. Our results provide quantitative criteria for discovering new kesterite-inspired photovoltaic materials with low band tailing.

preprint2020arXiv

Comment on "Low-frequency lattice phonons in halide perovskites explain high defect tolerance toward electron-hole recombination"

Halide perovskites exhibit slow rates of non-radiative electron-hole recombination upon illumination. Chu et al. [Sci. Adv. 6 7, eaaw7453 (2020)] use the results of first-principles simulations to argue that this arises from the nature of the crystal vibrations and leads to a breakdown of Shockley-Read-Hall theory. We highlight flaws in their methodology and analysis of carrier capture by point defects in crystalline semiconductors.

preprint2020arXiv

Quick-start guide for first-principles modelling of point defects in crystalline materials

Defects influence the properties and functionality of all crystalline materials. For instance, point defects participate in electronic (e.g. carrier generation and recombination) and optical (e.g. absorption and emission) processes critical to solar energy conversion. Solid-state diffusion, mediated by the transport of charged defects, is used for electrochemical energy storage. First-principles calculations of defects based on density functional theory have been widely used to complement, and even validate, experimental observations. In this `quick-start guide', we discuss the best practice in how to calculate the formation energy of point defects in crystalline materials and analysis techniques appropriate to probe changes in structure and properties relevant across energy technologies.

preprint2020arXiv

Upper limit to the photovoltaic efficiency of imperfect crystals

The Shockley-Queisser (SQ) limit provides a convenient metric for predicting light-to-electricity conversion efficiency of a solar cell based on the band gap of the light-absorbing layer. In reality, few materials approach this radiative limit. We develop a formalism and a computational method to predict the maximum photovoltaic efficiency of imperfect crystals from first principles. Our scheme includes equilibrium populations of native defects, their carrier-capture coefficients, and the associated recombination rates. When applied to kesterite solar cells, we reveal an intrinsic limit of 20% for $\mathrm{Cu_2ZnSnSe_4}$, which falls far below the SQ limit of 32%. The effects of atomic substitution and extrinsic doping are studied, leading to pathways for enhanced efficiency of 31%. This approach can be applied to support targeted-materials selection for future solar-energy technologies.