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Sunghyun Kim

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Published work

12 published item(s)

preprint2022arXiv

Efficient Strong Scaling Through Burst Parallel Training

As emerging deep neural network (DNN) models continue to grow in size, using large GPU clusters to train DNNs is becoming an essential requirement to achieving acceptable training times. In this paper, we consider the case where future increases in cluster size will cause the global batch size that can be used to train models to reach a fundamental limit: beyond a certain point, larger global batch sizes cause sample efficiency to degrade, increasing overall time to accuracy. As a result, to achieve further improvements in training performance, we must instead consider "strong scaling" strategies that hold the global batch size constant and allocate smaller batches to each GPU. Unfortunately, this makes it significantly more difficult to use cluster resources efficiently. We present DeepPool, a system that addresses this efficiency challenge through two key ideas. First, burst parallelism allocates large numbers of GPUs to foreground jobs in bursts to exploit the unevenness in parallelism across layers. Second, GPU multiplexing prioritizes throughput for foreground training jobs, while packing in background training jobs to reclaim underutilized GPU resources, thereby improving cluster-wide utilization. Together, these two ideas enable DeepPool to deliver a 1.2 - 2.3x improvement in total cluster throughput over standard data parallelism with a single task when the cluster scale is large.

preprint2022arXiv

Nuclear Magnetic Resonance for Arbitrary Spin Values in the Rotating Wave Approximation

In order to probe the transitions of a nuclear spin $s$ from one of its substate quantum numbers $m$ to another substate $m'$, the experimenter applies a magnetic field ${\bm B}_0$ in some particular direction, such along $\hat{\bm z}$, and then applies an weaker field ${\bm B}_1(t)$ that is oscillatory in time with the angular frequency $ω$, and is normally perpendicular to ${\bm B}_0$, such as ${\bm B}_1(t)=B_1\hat{\bm x}\cos(ωt)$. In the rotating wave approximation, ${\bm B}_1(t)=B_1[\hat{\bm x}\cos(ωt)+\hat{\bm y}\sin(ωt)]$. Although this problem is solved for spin $\frac{1}{2}$ in every quantum mechanics textbook, for the general spin $s$ case, its general solution has been published only for the overall probability of a transition between the states, but the time dependence of the probability of finding the nucleus in each of the substates has not previously been published. Here we present an elementary method to solve this problem exactly, and present figures for the time dependencies of the various substates states for a variety of initial substate probabilities for a variety of $s$ values. We found a new result: unlike the $s=\frac{1}{2}$ case, for which if the initial probability of finding the particle in one of the substates was 1, and the time dependence of the probabilities of each of the substates oscillates between 0 and 1, for higher spin values, the time dependencies of the probabilities finding the particle in each of its substates, which periodic, is considerably more complicated.

preprint2020arXiv

Assessing the defect tolerance of kesterite-inspired solar absorbers

Various thin-film I$_2$-II-IV-VI$_4$ photovoltaic absorbers derived from kesterite Cu$_2$ZnSn(S,Se)$_4$ have been synthesized, characterized, and theoretically investigated in the past few years. The availability of this homogeneous materials dataset is an opportunity to examine trends in their defect properties and identify criteria to find new defect-tolerant materials in this vast chemical space. We find that substitutions on the Zn site lead to a smooth decrease in band tailing as the ionic radius of the substituting cation increases. Unfortunately, this substitution strategy does not ensure the suppression of deeper defects and non-radiative recombination. Trends across the full dataset suggest that Gaussian and Urbach band tails in kesterite-inspired semiconductors are two separate phenomena caused by two different antisite defect types. Deep Urbach tails are correlated with the calculated band gap narrowing caused by the (2I$_\mathrm{II}$+IV$_\mathrm{II}$) defect cluster. Shallow Gaussian tails are correlated with the energy difference between the kesterite and stannite polymorphs, which points to the role of (I$_\mathrm{II}$+II$_\mathrm{I}$) defect clusters involving Group IB and Group IIB atoms swapping across \textit{different} cation planes. This finding can explain why \textit{in-plane} cation disorder and band tailing are uncorrelated in kesterites. Our results provide quantitative criteria for discovering new kesterite-inspired photovoltaic materials with low band tailing.

preprint2020arXiv

Comment on "Low-frequency lattice phonons in halide perovskites explain high defect tolerance toward electron-hole recombination"

Halide perovskites exhibit slow rates of non-radiative electron-hole recombination upon illumination. Chu et al. [Sci. Adv. 6 7, eaaw7453 (2020)] use the results of first-principles simulations to argue that this arises from the nature of the crystal vibrations and leads to a breakdown of Shockley-Read-Hall theory. We highlight flaws in their methodology and analysis of carrier capture by point defects in crystalline semiconductors.

preprint2020arXiv

Quick-start guide for first-principles modelling of point defects in crystalline materials

Defects influence the properties and functionality of all crystalline materials. For instance, point defects participate in electronic (e.g. carrier generation and recombination) and optical (e.g. absorption and emission) processes critical to solar energy conversion. Solid-state diffusion, mediated by the transport of charged defects, is used for electrochemical energy storage. First-principles calculations of defects based on density functional theory have been widely used to complement, and even validate, experimental observations. In this `quick-start guide', we discuss the best practice in how to calculate the formation energy of point defects in crystalline materials and analysis techniques appropriate to probe changes in structure and properties relevant across energy technologies.

preprint2020arXiv

Upper limit to the photovoltaic efficiency of imperfect crystals

The Shockley-Queisser (SQ) limit provides a convenient metric for predicting light-to-electricity conversion efficiency of a solar cell based on the band gap of the light-absorbing layer. In reality, few materials approach this radiative limit. We develop a formalism and a computational method to predict the maximum photovoltaic efficiency of imperfect crystals from first principles. Our scheme includes equilibrium populations of native defects, their carrier-capture coefficients, and the associated recombination rates. When applied to kesterite solar cells, we reveal an intrinsic limit of 20% for $\mathrm{Cu_2ZnSnSe_4}$, which falls far below the SQ limit of 32%. The effects of atomic substitution and extrinsic doping are studied, leading to pathways for enhanced efficiency of 31%. This approach can be applied to support targeted-materials selection for future solar-energy technologies.

preprint2016arXiv

Direct band gap carbon superlattices with efficient optical transition

We report pure carbon-based superlattices that exhibit direct band gaps and excellent optical absorption and emission properties at the threshold energy. The structures are nearly identical to that of cubic diamond except that defective layers characterized by five- and seven-membered rings are intercalated in the diamond lattice. The direct band gaps lie in the range of 5.6~5.9 eV, corresponding to wavelengths of 210~221 nm. The dipole matrix elements of direct optical transition are comparable to that of GaN, suggesting that the superlattices are promising materials as an efficient deep ultraviolet light emitter. Molecular dynamics simulations show that the superlattices are thermally stable even at a high temperature of 2000 K. We provide a possible route to the synthesis of superlattices through wafer bonding of diamond (100) surfaces.

preprint2016arXiv

Role of a Relay in Bursty Multiple Access Channels

We investigate the role of a relay in multiple access channels (MACs) with bursty user traffic, where intermittent data traffic restricts the users to bursty transmissions. As our main result, we characterize the degrees of freedom (DoF) region of a $K$-user bursty multi-input multi-output (MIMO) Gaussian MAC with a relay, where Bernoulli random states are introduced to govern bursty user transmissions. To that end, we extend the noisy network coding scheme to achieve the cut-set bound. Our main contribution is in exploring the role of a relay from various perspectives. First, we show that a relay can provide a DoF gain in bursty channels, unlike in conventional non-bursty channels. Interestingly, we find that the relaying gain can scale with additional antennas at the relay to some extent. Moreover, observing that a relay can help achieve collision-free performances, we establish the necessary and sufficient condition for attaining collision-free DoF. Lastly, we consider scenarios in which some physical perturbation shared around the users may generate data traffic simultaneously, causing transmission patterns across them to be correlated. We demonstrate that for most cases in such scenarios, the relaying gain is greater when the users' transmission patterns are more correlated, hence when more severe collisions take place. Our results have practical implications in various scenarios of wireless networks such as device-to-device systems and random media access control protocols.

preprint2016arXiv

Top-$K$ Ranking from Pairwise Comparisons: When Spectral Ranking is Optimal

We explore the top-$K$ rank aggregation problem. Suppose a collection of items is compared in pairs repeatedly, and we aim to recover a consistent ordering that focuses on the top-$K$ ranked items based on partially revealed preference information. We investigate the Bradley-Terry-Luce model in which one ranks items according to their perceived utilities modeled as noisy observations of their underlying true utilities. Our main contributions are two-fold. First, in a general comparison model where item pairs to compare are given a priori, we attain an upper and lower bound on the sample size for reliable recovery of the top-$K$ ranked items. Second, more importantly, extending the result to a random comparison model where item pairs to compare are chosen independently with some probability, we show that in slightly restricted regimes, the gap between the derived bounds reduces to a constant factor, hence reveals that a spectral method can achieve the minimax optimality on the (order-wise) sample size required for top-$K$ ranking. That is to say, we demonstrate a spectral method alone to be sufficient to achieve the optimality and advantageous in terms of computational complexity, as it does not require an additional stage of maximum likelihood estimation that a state-of-the-art scheme employs to achieve the optimality. We corroborate our main results by numerical experiments.

preprint2015arXiv

A Relay Can Increase Degrees of Freedom in Bursty Interference Networks

We investigate the benefits of relays in multi-user wireless networks with bursty user traffic, where intermittent data traffic restricts the users to bursty transmissions. To this end, we study a two-user bursty MIMO Gaussian interference channel with a relay, where two Bernoulli random states govern the bursty user traffic. We show that an in-band relay can provide a degrees of freedom (DoF) gain in this bursty channel. This beneficial role of in-band relays in the bursty channel is in direct contrast to their role in the non-bursty channel which is not as significant to provide a DoF gain. More importantly, we demonstrate that for certain antenna configurations, an in-band relay can help achieve interference-free performances with increased DoF. We find the benefits particularly substantial with low data traffic, as the DoF gain can grow linearly with the number of antennas at the relay. In this work, we first derive an outer bound from which we obtain a necessary condition for interference-free DoF performances. Then, we develop a novel scheme that exploits information of the bursty traffic states to achieve them.

preprint2015arXiv

Dipole-Allowed Direct Band Gap Silicon Superlattices

Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable pure-silicon superlattice structures that can serve as promising materials for solar cell applications and can lead to the realization of pure Si-based optoelectronic devices. The structures are almost identical to that of bulk Si except that defective layers are intercalated in the diamond lattice. The superlattices exhibit dipole-allowed direct band gaps as well as indirect band gaps, providing ideal conditions for the investigation of a direct-to-indirect band gap transition. The transition can be understood in terms of a novel conduction band originating from defective layers, an overlap between the valence- and conduction-band edge states at the interface layers, and zone folding with quantum confinement effects on the conduction band of non-defective bulk-like Si. The fact that almost all structural portions of the superlattices originate from bulk Si warrants their stability and good lattice matching with bulk Si. Through first-principles molecular dynamics simulations, we confirmed their thermal stability and propose a possible method to synthesize the defective layer through wafer bonding.

preprint2014arXiv

A Finite-Size Supercell Correction Scheme for Charged Defects in One-Dimensional Systems

We propose a new finite-size correction scheme for the formation energy of charged defects and impurities in one-dimensional systems within density functional theory. The energy correction in a supercell geometry is obtained by solving the Poisson equation in a continuum model which is described by an anistrotropic permittivity tensor, with the defect charge distribution derived from first-principles calculations. We implement our scheme to study impurities and dangling bonds in silicon nanowires and demonstrate that the formation energy of charged defects rapidly converges with the supercell size.