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K. J. Chang

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.other cond-mat.str-el cond-mat.supr-con

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preprint2016arXiv

Direct band gap carbon superlattices with efficient optical transition

We report pure carbon-based superlattices that exhibit direct band gaps and excellent optical absorption and emission properties at the threshold energy. The structures are nearly identical to that of cubic diamond except that defective layers characterized by five- and seven-membered rings are intercalated in the diamond lattice. The direct band gaps lie in the range of 5.6~5.9 eV, corresponding to wavelengths of 210~221 nm. The dipole matrix elements of direct optical transition are comparable to that of GaN, suggesting that the superlattices are promising materials as an efficient deep ultraviolet light emitter. Molecular dynamics simulations show that the superlattices are thermally stable even at a high temperature of 2000 K. We provide a possible route to the synthesis of superlattices through wafer bonding of diamond (100) surfaces.

preprint2015arXiv

Dipole-Allowed Direct Band Gap Silicon Superlattices

Silicon is the most popular material used in electronic devices. However, its poor optical properties owing to its indirect band gap nature limit its usage in optoelectronic devices. Here we present the discovery of super-stable pure-silicon superlattice structures that can serve as promising materials for solar cell applications and can lead to the realization of pure Si-based optoelectronic devices. The structures are almost identical to that of bulk Si except that defective layers are intercalated in the diamond lattice. The superlattices exhibit dipole-allowed direct band gaps as well as indirect band gaps, providing ideal conditions for the investigation of a direct-to-indirect band gap transition. The transition can be understood in terms of a novel conduction band originating from defective layers, an overlap between the valence- and conduction-band edge states at the interface layers, and zone folding with quantum confinement effects on the conduction band of non-defective bulk-like Si. The fact that almost all structural portions of the superlattices originate from bulk Si warrants their stability and good lattice matching with bulk Si. Through first-principles molecular dynamics simulations, we confirmed their thermal stability and propose a possible method to synthesize the defective layer through wafer bonding.

preprint2014arXiv

A Finite-Size Supercell Correction Scheme for Charged Defects in One-Dimensional Systems

We propose a new finite-size correction scheme for the formation energy of charged defects and impurities in one-dimensional systems within density functional theory. The energy correction in a supercell geometry is obtained by solving the Poisson equation in a continuum model which is described by an anistrotropic permittivity tensor, with the defect charge distribution derived from first-principles calculations. We implement our scheme to study impurities and dangling bonds in silicon nanowires and demonstrate that the formation energy of charged defects rapidly converges with the supercell size.

preprint2010arXiv

Localization and One-Parameter Scaling in Hydrogenated Graphene

We report a metal-insulator transition in disordered graphene with low coverages of hydrogen atoms. Hydrogen interacting with graphene creates short-range disorder and localizes states near the neutrality point. The energy range of localization grows with increasing of H concentration. Calculations show that the conductances through low-energy propagating channels decay exponentially with sample size and are well fitted by one-parameter scaling function, similar to a disorder-driven metal-insulator transition in 2-dimensional disordered systems.

preprint2010arXiv

O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors

We find that O-vacancy (Vo) acts as a hole trap and play a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Photo-excited holes drifted toward the channel/dielectric interface due to small potential barriers and can be captured by Vo in the dielectrics. While Vo(+2) defects are very stable at room temperature, their original deep states are recovered via electron capture upon annealing. We also find that Vo(+2) can diffuse in amorphous phase, including hole accumulation near the interface under negative gate bias.

preprint1998arXiv

Impurity Doping Effect in High $T_{c}$ Superconductors

It has been observed that impurity doping and/or ion-beam-induced damage in high $T_{c}$ superconductors cause a metal-insulator transition and thereby suppress the critical temperature. Based on our recent theory of the weak localization effect on superconductivity, we examine the variation of $T_{c}$ with increasing of impurity concentration $\rm (x)$ in $\rm{La_{1.85}Sr_{0.15}Cu_{1-x}A_{x}O_{4}}$ systems, where A $=$ Fe, Co, Ni, Zn, or Ga. We find that the doping impurity decreases the scattering matrix elements for electron-electron attractions, such as $V_{nn'}=-V[1-{2\over πk_{F}\ell} ln(L/\ell)]$, where $L$ and $\ell$ are the inelastic and elastic mean free paths, respectively. Using the mean free path $\ell$ determined from resistivity data, we find good agreements between our calculated values for $T_{c}$ and experimental data except for Ni-doped samples, where Ni impurities may enhance the pairing interaction.