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Researcher profile

Aron Walsh

Aron Walsh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-phphysics.app-phphysics.chem-phphysics.data-an

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Published work

11 published item(s)

preprint2024arXiv

Factors Enabling Delocalized Charge-Carriers in Pnictogen-Based Solar Absorbers: In-depth Investigation into CuSbSe2

Inorganic semiconductors based on heavy pnictogen cations (Sb3+ and Bi3+) have gained significant attention as potential nontoxic and stable alternatives to lead-halide perovskites for solar cell applications. A limitation of these novel materials, which is being increasingly commonly found, is carrier localization, which substantially reduces mobilities and diffusion lengths. Herein, the layered příbramite CuSbSe2 is investigated and discovered to have delocalized free carriers, as shown through optical pump terahertz probe spectroscopy and temperature-dependent mobility measurements. Using a combination of theory and experiment, it is found that the underlying factors are: 1) weak coupling to acoustic phonons due to low deformation potentials, as lattice distortions are primarily accommodated through rigid inter-layer movement rather than straining inter-atomic bonds, and 2) weak coupling to optical phonons due to the ionic contributions to the dielectric constant being low compared to electronic contributions. This work provides important insights into how pnictogen-based semiconductors avoiding carrier localization could be identified.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electronic Defects in Metal Oxide Photocatalysts

A deep understanding of defects is essential for the optimisation of materials for solar energy conversion. This is particularly true for metal oxide photo(electro)catalysts, which typically feature high concentrations of charged point defects that are electronically active. In photovoltaic materials, except for selected dopants, defects are considered detrimental and should be eliminated to minimise charge recombination. However, photocatalysis is a more complex process where defects can play an active role, for example, by stabilising charge separation and mediating rate-limiting catalytic steps. Here, we review the behaviour of electronic defects in metal oxides, paying special attention to the principles underpinning the formation and function of trapped charges in the form of polarons. We focus on how defects alter the electronic structure, statically or transiently upon illumination, and discuss the implications of such changes in light-driven catalytic reactions. Finally, we consider the applicability of lessons learned from oxide defect chemistry to new photocatalysts based on carbon nitrides, polymers and metal halide perovskites.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Switchable Electric Dipole from Polaron Localization in Dielectric Crystals

Ferroelectricity in crystals is associated with the displacement of ions or rotations of polar units. Here we consider the dipole created by donor doping ($D^+$) and the corresponding bound polaron ($e^-$).A dipole of 6.15 Debye is predicted, from Berry phase analysis, in the Ruddlesden-Popper phase of ${\rm Sr_3Ti_2O_7}$. A characteristic double-well potential is formed, which persists for high doping densities. The effective Hubbard $U$ interaction can vary the defect state from metallic, a two-dimensional polaron, through to a zero-dimensional polaron. The ferroelectric-like behavior reported here is localized and distinct from conventional spontaneous lattice polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

What Information is Necessary and Sufficient to Predict Materials Properties using Machine Learning?

Conventional wisdom of materials modelling stipulates that both chemical composition and crystal structure are integral in the prediction of physical properties. However, recent developments challenge this by reporting accurate property-prediction machine learning (ML) frameworks using composition alone without knowledge of the local atomic environments or long-range order. To probe this behavior, we conduct a systematic comparison of supervised ML models built on composition only vs. composition plus structure features. Similar performance for property prediction is found using both models for compounds close to the thermodynamic convex hull. We hypothesize that composition embeds structural information of ground-state structures in support of composition-centric models for property prediction and inverse design of stable compounds.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Lone pair driven anisotropy in antimony chalcogenide semiconductors

Antimony sulfide (Sb2S3) and selenide (Sb2Se3) have emerged as promising earth-abundant alternatives among thin-film photovoltaic compounds. A distinguishing feature of these materials is their anisotropic crystal structures, which are composed of quasi-one-dimensional (1D) [Sb4X6]n ribbons. The interaction between ribbons has been reported to be van der Waals (vdW) in nature and Sb2X3 are thus commonly classified in the literature as 1D semiconductors. However, based on first-principles calculations, here we show that inter-ribbon interactions are present in Sb2X3 beyond the vdW regime. The origin of the anisotropic structures is related to the stereochemical activity of the Sb 5s lone pair according to electronic structure analysis. The impacts of structural anisotropy on the electronic and optical properties are further examined, including the presence of higher dimensional Fermi surfaces for charge carrier transport. Our study provides guidelines for optimising the performance of Sb2X3-based solar cells via device structuring based on the underlying crystal anisotropy.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Assessing the defect tolerance of kesterite-inspired solar absorbers

Various thin-film I$_2$-II-IV-VI$_4$ photovoltaic absorbers derived from kesterite Cu$_2$ZnSn(S,Se)$_4$ have been synthesized, characterized, and theoretically investigated in the past few years. The availability of this homogeneous materials dataset is an opportunity to examine trends in their defect properties and identify criteria to find new defect-tolerant materials in this vast chemical space. We find that substitutions on the Zn site lead to a smooth decrease in band tailing as the ionic radius of the substituting cation increases. Unfortunately, this substitution strategy does not ensure the suppression of deeper defects and non-radiative recombination. Trends across the full dataset suggest that Gaussian and Urbach band tails in kesterite-inspired semiconductors are two separate phenomena caused by two different antisite defect types. Deep Urbach tails are correlated with the calculated band gap narrowing caused by the (2I$_\mathrm{II}$+IV$_\mathrm{II}$) defect cluster. Shallow Gaussian tails are correlated with the energy difference between the kesterite and stannite polymorphs, which points to the role of (I$_\mathrm{II}$+II$_\mathrm{I}$) defect clusters involving Group IB and Group IIB atoms swapping across \textit{different} cation planes. This finding can explain why \textit{in-plane} cation disorder and band tailing are uncorrelated in kesterites. Our results provide quantitative criteria for discovering new kesterite-inspired photovoltaic materials with low band tailing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Comment on "Low-frequency lattice phonons in halide perovskites explain high defect tolerance toward electron-hole recombination"

Halide perovskites exhibit slow rates of non-radiative electron-hole recombination upon illumination. Chu et al. [Sci. Adv. 6 7, eaaw7453 (2020)] use the results of first-principles simulations to argue that this arises from the nature of the crystal vibrations and leads to a breakdown of Shockley-Read-Hall theory. We highlight flaws in their methodology and analysis of carrier capture by point defects in crystalline semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Lattice compression increases the activation barrier for phase segregation in mixed-halide perovskites

The bandgap tunability of mixed-halide perovskites makes them promising candidates for light emitting diodes and tandem solar cells. However, illuminating mixed-halide perovskites results in the formation of segregated phases enriched in a single-halide. This segregation occurs through ion migration, which is also observed in single-halide compositions, and whose control is thus essential to enhance the lifetime and stability. Using pressure-dependent transient absorption spectroscopy, we find that the formation rates of both iodide- and bromide-rich phases in MAPb(BrxI1-x)3 reduce by two orders of magnitude on increasing the pressure to 0.3 GPa. We explain this reduction from a compression-induced increase of the activation energy for halide migration, which is supported by first-principle calculations. A similar mechanism occurs when the unit cell volume is reduced by incorporating a smaller cation. These findings reveal that stability with respect to halide segregation can be achieved either physically through compressive stress or chemically through compositional engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Modelling the dielectric constants of crystals using machine learning

The relative permittivity of a crystal is a fundamental property that links microscopic chemical bonding to macroscopic electromagnetic response. Multiple models, including analytical, numerical and statistical descriptions, have been made to understand and predict dielectric behaviour. Analytical models are often limited to a particular type of compounds, whereas machine learning (ML) models often lack interpretability. Here, we combine supervised ML, density functional perturbation theory, and analysis based on game theory to predict and explain the physical trends in optical dielectric constants of crystals. Two ML models, support vector regression and deep neural networks, were trained on a dataset of 1,364 dielectric constants. Shapley additive explanations (SHAP) analysis of the ML models reveals that they recover correlations described by textbook Clausius-Mossotti and Penn models, which gives confidence in their ability to describe physical behavior, while providing superior predictive power.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quick-start guide for first-principles modelling of point defects in crystalline materials

Defects influence the properties and functionality of all crystalline materials. For instance, point defects participate in electronic (e.g. carrier generation and recombination) and optical (e.g. absorption and emission) processes critical to solar energy conversion. Solid-state diffusion, mediated by the transport of charged defects, is used for electrochemical energy storage. First-principles calculations of defects based on density functional theory have been widely used to complement, and even validate, experimental observations. In this `quick-start guide', we discuss the best practice in how to calculate the formation energy of point defects in crystalline materials and analysis techniques appropriate to probe changes in structure and properties relevant across energy technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Upper limit to the photovoltaic efficiency of imperfect crystals

The Shockley-Queisser (SQ) limit provides a convenient metric for predicting light-to-electricity conversion efficiency of a solar cell based on the band gap of the light-absorbing layer. In reality, few materials approach this radiative limit. We develop a formalism and a computational method to predict the maximum photovoltaic efficiency of imperfect crystals from first principles. Our scheme includes equilibrium populations of native defects, their carrier-capture coefficients, and the associated recombination rates. When applied to kesterite solar cells, we reveal an intrinsic limit of 20% for $\mathrm{Cu_2ZnSnSe_4}$, which falls far below the SQ limit of 32%. The effects of atomic substitution and extrinsic doping are studied, leading to pathways for enhanced efficiency of 31%. This approach can be applied to support targeted-materials selection for future solar-energy technologies.

0 citations0 reviewsNo code linkedOpen access