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Researcher profile

Sung Hwan Kim

Sung Hwan Kim contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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Published work

3 published item(s)

preprint2016arXiv

Topological phase transition and quantum spin Hall edge states of antimony few layers

While two-dimensional topological insulators (2D TI) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to material issues. Here, we introduce a new 2D TI material, Sb few layer films. Electronic structures of ultrathin Sb islands grown on Bi2Te2Se are investigated by scanning tunneling microscopy. The maps of local density of states clearly identify robust edge electronic states over the thickness of three bilayers in clear contrast to thinner islands. This indicates the topological edge states emerged through a 2D topological phase transition predicted between three and four bilayer films in recent theory. The non-trivial phase transition and edge states are confirmed for epitaxial films by extensive density-functional-theory calculations. This work provides an important material platform to exploit miscroscopic aspects of the quantum spin Hall phase and its quantum phase transition.

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preprint2014arXiv

Edge and Interfacial States in a 2D Topological Insulator:Bi(111) Bilayer on Bi$_{2}$Te$_{2}$Se

The electronic states of a single Bi(111) bilayer and its edges, suggested as a two dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi$_{2}$Te$_{2}$Se crystal. The calculation shows that the band gap of the Bi bilayer closes with a formation of a new but small hybridization gap due to the strong interaction between Bi and Bi$_{2}$Te$_{2}$Se. Nevertheless, the topological nature of the Bi bilayer and the topological edge state are preserved only with an energy shift. The edge-enhanced local density of states are identified and visualized clearly by STS in good agreement with the calculation. This can be the sign of the topological edge state, which corresponds to the quantum spin Hall state. The interfacial state between Bi and Bi$_{2}$Te$_{2}$Se is also identified inside the band gap region. This state also exhibits the edge modulation, which was previously interpreted as the evidence of the topological edge state [F. Yang et al., Phys. Rev. Lett. 109, 016801 (2012)].

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preprint2014arXiv

Transforming a Surface State of Topological Insulator by a Bi Capping Layer

We introduce a dinstint approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.

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