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Sugata Chowdhury

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con physics.comp-ph

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preprint2025arXiv

Magnetism-Enhanced Strong Electron-Phonon Coupling in Infinite-Layer Nickelate

Intriguing analogies between the nickelates and the cuprates provide a promising avenue for unraveling the microscopic mechanisms underlying high- $T_c$ superconductivity. While electron correlation effects in the nickelates have been extensively studied, the role of electron-phonon coupling (EPC) remains highly controversial. Here, by taking pristine LaNiO $_2$ as an exemplar nickelate, we present an in-depth study of EPC for both the non-magnetic (NM) and the $C$ -type antiferromagnetic ( $C$ -AFM) phase using advanced density functional theory methods without invoking $U$ or other free parameters. The weak EPC strength $λ$ in the NM phase is found to be greatly enhanced ( $\sim$ 4 $\times$ ) due to the presence of magnetism in the $C$ -AFM phase. This enhancement arises from strong interactions between the flat bands associated with the Ni-3 $d_{z^2}$ orbitals and the low-frequency phonon modes driven by the vibrations of Ni and La atoms. The resulting phonon softening is shown to yield a distinctive kink in the electronic structure around 15 meV, which would provide an experimentally testable signature of our predictions. Our study highlights the critical role of local magnetic moments and interply EPC in the nickelate.

preprint2022arXiv

Anisotropy of the magnetic and transport properties in EuZn $_2$ As $_2$

Several recent studies have shown that the anisotropy in the magnetic structure of \ECA\ plays a significant role in stabilizing the Weyl nodes. To investigate the relationship between magnetic anisotropy and Weyl physics, we present a comparative study between EuZn $_2$ As $_2$ and EuCd $_2$ As $_2$ that are isostructural but with different magnetic anisotropy. We performed structural analysis, electronic transport, and magnetization experiments on millimeter-sized single crystals of EuZn $_2$ As $_2$ , and compared the results to those of EuCd $_2$ As $_2$ . By combining the first principle calculations and neutron diffraction experiment, we identify the magnetic ground state of EuZn $_2$ As $_2$ as A-type antiferromagnetic order with a transition temperature ( $T_\mathrm{N}$ = 19.6 K) twice that of EuCd $_2$ As $_2$ . Like EuCd $_2$ As $_2$ , the negative magnetoresistance of EuZn $_2$ As $_2$ is observed after suppressing the resistivity peak at $T_\mathrm{N}$ with increasing fields. However, the anisotropy in both transport and magnetization are much reduced in EuZn $_2$ As $_2$ . The difference could be ascribed to the weaker spin-orbit coupling, more localized $d$ -orbitals, and a larger contribution from the Eu $s$ -orbitals in the zinc compound, as suggested by the electronic band calculations. The same band structure effect could be also responsible for the observation of a smaller non-linear anomalous Hall effect in EuZn $_2$ As $_2$ compared to EuCd $_2$ As $_2$ .

preprint2022arXiv

On the Role of Defects in the Electronic Structure of MnBi $_{2-x}$ Sb $_x$ Te $_4$

Elemental substitution is a proven method of Fermi level tuning in topological insulators, which is needed for device applications. Through static and time resolved photoemission, we show that in MnBi $_2$ Te $_4$ , elemental substitution of Bi with Sb indeed tunes the Fermi level towards the bulk band gap, making the material charge neutral at 35\% Sb concentration. For the first time, we are able to directly probe the excited state band structure at this doping level, and their dynamics, which show that the decay channels at the Fermi level are severely restricted. However, elemental substitution widens the surface state gap, which we attribute to the increase in antisite defects resulting from Sb substitution. This hypothesis is supported by DFT calculations that include defects, which show a sensitivity of the topological surface state to their inclusion. Our results emphasize the need for defect control if MnBi $_{2-x}$ Sb $_x$ Te $_4$ is to be used for device applications.

preprint2022arXiv

Review of Theoretical and Computational Methods for 2D Materials Exhibiting Charge Density Waves

Two-dimensional (2D) materials that exhibit charge density waves (CDWs) have generated many research endeavors in the hopes of employing their exotic properties for various quantum-based technologies. Early investigations surrounding CDWs were mostly focused on bulk materials. However, applications for quantum devices have since required devices to be constructed from few-layer material to fully utilize the material's properties. This field has greatly expanded over the decades, warranting a focus on the computational efforts surrounding CDWs in 2D materials. In this review, we will cover ground in the following relevant, theory-driven subtopics for TaS2 and TaSe2: summary of general computational techniques and methods, atomic structures, Raman modes, and effects of confinement and dimensionality. Through understanding how the computational methods have enabled incredible advancements in quantum materials, one may anticipate the ever-expanding directions available for continued pursuit as the field brings us through the 21st century.

preprint2022arXiv

Topological Phases of Mn $A_{2}$ $X_{4}$ (A=Bi, Sb; X = Se, Te) under Magnetic Field

The concept of electronic topology and the associated topological protection brings excellent opportunities for developing next-generation devices. Ideally, magnetic topological materials (MTM) should have their Dirac/Weyl points and/or associated mass gaps at the Fermi energy (EF) or be readily tunable such that they can be placed at EF via external perturbations such as electric field gating, chemical substitutions, or doping. Three-dimensional antiferromagnetic (AFM) materials like Mn $Bi_{2}$ $X_{4}$ (X=Se, Te) that have strong spin-orbit coupling (SOC) and broken time-reversal symmetry (TRS) due to magnetic ordering have been the subject of enormous interest.. In this work, using density functional theory (DFT), we have studied the electronic properties and topological phases of the first intrinsic magnetic topological insulator family Mn $Bi_{2}$ $Te_{4}$ (MBT) in the presence of an external magnetic field. Our calculations reveal that the topological phase of bulk rhombohedral (R $\overline{3}$ m) Mn $A_{2}$ $X_{4}$ (A = Sb, Bi; X=Se, Te) depends on the spin direction and the chemistry. The antiferromagnetic (AFM) ground state of Mn $Sb_{2}$ $Se_{4}$ (MSS) is a trivial insulator, whereas the AFM ground state of Mn $Bi_{2}$ $Se_{4}$ (MBS) is an Axion insulator. Both materials become nodal point or nodal line Weyl semimetals in the presence of a sufficiently strong external magnetic field. The AFM ground state of Mn $Sb_{2}$ $Te_{4}$ (MST) is an Axion insulator. MST is a type-II Weyl semimetal with spins aligned in the $\hat{Z}$ -direction, but becomes insulating with an inverted band gap for spins in-plane. Similarly, the AFM phase of MBT is an Axion insulator, but remains insulating with an inverted gap in the ferromagnetic phase. Additionally, we demonstrated the evolution of the topological phase of Mn $Bi_{2}$ $Te_{4}$ (MBT) by substituting the Bi atoms with the Sb atoms.

preprint2021arXiv

Topological surface states of MnBi $_2$ Te $_4$ at finite temperatures and at domain walls

MnBi $_2$ Te $_4$ has recently been the subject of intensive study, due to the prediction of axion insulator, Weyl semimetal, and quantum anomalous Hall insulator phases, depending on the structure and magnetic ordering. Experimental results have confirmed some aspects of this picture, but several experiments have seen zero-gap surfaces states at low temperature, in conflict with expectations. In this work, we develop a first-principles-based tight-binding model that allows for arbitrary control of the local spin direction and spin-orbit coupling, enabling us to accurately treat large unit-cells. Using this model, we examine the behavior of the topological surface state as a function of temperature, finding a gap closure only above the Néel temperature. In addition, we examine the effect of magnetic domains on the electronic structure, and we find that the domain wall zero-gap states extend over many unit-cells. These domain wall states can appear similar to the high temperature topological surface state when many domain sizes are averaged, potentially reconciling theoretical results with experiments.

preprint2011arXiv

Theoretical investigation of the evolution of the topological phase of Bi $_{2}$ Se $_{3}$ under mechanical strain

The topological insulating phase results from inversion of the band gap due to spin-orbit coupling at an odd number of time-reversal symmetric points. In Bi $_2$ Se $_3$ , this inversion occurs at the $Γ$ point. For bulk Bi $_2$ Se $_3$ , we have analyzed the effect of arbitrary strain on the $Γ$ point band gap using Density Functional Theory. By computing the band structure both with and without spin-orbit interactions, we consider the effects of strain on the gap via Coulombic interaction and spin-orbit interaction separately. While compressive strain acts to decrease the Coulombic gap, it also increases the strength of the spin-orbit interaction, increasing the inverted gap. Comparison with Bi $_2$ Te $_3$ supports the conclusion that effects on both Coulombic and spin-orbit interactions are critical to understanding the behavior of topological insulators under strain, and we propose that the topological insulating phase can be effectively manipulated by inducing strain through chemical substitution.

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Sugata Chowdhury

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7 publications

Magnetism-Enhanced Strong Electron-Phonon Coupling in Infinite-Layer Nickelate

Anisotropy of the magnetic and transport properties in EuZn $_2$ As $_2$

On the Role of Defects in the Electronic Structure of MnBi $_{2-x}$ Sb $_x$ Te $_4$

Review of Theoretical and Computational Methods for 2D Materials Exhibiting Charge Density Waves

Topological Phases of Mn $A_{2}$ $X_{4}$ (A=Bi, Sb; X = Se, Te) under Magnetic Field

Topological surface states of MnBi $_2$ Te $_4$ at finite temperatures and at domain walls

Theoretical investigation of the evolution of the topological phase of Bi $_{2}$ Se $_{3}$ under mechanical strain

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Sugata Chowdhury

Research overview

Is this your work?

7 publications

Magnetism-Enhanced Strong Electron-Phonon Coupling in Infinite-Layer Nickelate

Anisotropy of the magnetic and transport properties in EuZn2_22​As2_22​

On the Role of Defects in the Electronic Structure of MnBi2−x_{2-x}2−x​Sbx_xx​Te4_44​

Review of Theoretical and Computational Methods for 2D Materials Exhibiting Charge Density Waves

Topological Phases of MnA2A_{2}A2​X4X_{4}X4​ (A=Bi, Sb; X = Se, Te) under Magnetic Field

Topological surface states of MnBi2_22​Te4_44​ at finite temperatures and at domain walls

Theoretical investigation of the evolution of the topological phase of Bi2_{2}2​Se3_{3}3​ under mechanical strain

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Building this map preview

Anisotropy of the magnetic and transport properties in EuZn $_2$ As $_2$

On the Role of Defects in the Electronic Structure of MnBi $_{2-x}$ Sb $_x$ Te $_4$

Topological Phases of Mn $A_{2}$ $X_{4}$ (A=Bi, Sb; X = Se, Te) under Magnetic Field

Topological surface states of MnBi $_2$ Te $_4$ at finite temperatures and at domain walls

Theoretical investigation of the evolution of the topological phase of Bi $_{2}$ Se $_{3}$ under mechanical strain