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Researcher profile

Andrew M. Rappe

Andrew M. Rappe contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-phphysics.chem-phphysics.optics

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Published work

8 published item(s)

preprint2022arXiv

Recent Progress in the Theory of Bulk Photovoltaic Effect

The bulk photovoltaic effect (BPVE) occurs in solids with broken inversion symmetry and refers to DC current generation due to uniform illumination, without the need of heterostructures or interfaces, a feature that is distinct from the traditional photovoltaic effect. Its existence has been demonstrated almost 50 years ago, but predictive theories only appeared in the last ten years, allowing for the identification of different mechanisms and the determination of their relative importance in real materials. It is now generally accepted that there is an intrinsic mechanism that is insensitive to scattering, called shift current, where first-principles calculations can now give highly accurate predictions. Another important but more extrinsic mechanism, called ballistic current, is also attracting a lot of attention, but due to the complicated scattering processes, its numerical calculation for real materials is only made possible quite recently. In addition, an intrinsic ballistic current, usually referred to as injection current, will appear under circularly-polarized light and has wide application in experiments. In this article, experiments that are pertinent to the theory development are reviewed, and a significant portion is devoted to discussing the recent progress in the theories of BPVE and their numerical implementations. As a demonstration of the capability of the newly developed theories, a brief review of the materials design strategies enabled by the theory development is given. Finally, remaining questions in the BPVE field and possible future directions are discussed to inspire further investigations.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

First Principles Calculation of Ballistic Current from Electron-Hole Interaction

The bulk photovoltaic effect (BPVE) has attracted an increasing interest due to its potential to overcome the efficiency limit of traditional photovoltaics, and much effort has been devoted to understanding its underlying physics. However, previous work has shown that theoretical models of the shift current and the phonon-assisted ballistic current in real materials do not fully account for the experimental BPVE photocurrent, and so other mechanisms should be investigated in order to obtain a complete picture of BPVE. In this Letter, we demonstrate two approaches that enable the ab initio calculation of the ballistic current originating from the electron-hole interaction in semiconductors. Using BaTiO$_3$ and MoS$_2$ as two examples, we show clearly that for them the asymmetric scattering from electron-hole interaction is less appreciable than that from electron-phonon interaction, indicating more scattering processes need to be included to further improve the BPVE theory. Moreover, our approaches build up a venue for predicting and designing materials with larger ballistic current due to electron-hole interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Large Bulk Piezophotovoltaic Effect of Monolayer $2H$-MoS$_2$

The bulk photovoltaic effect in noncentrosymmetric materials is an intriguing physical phenomenon that holds potential for high-efficiency energy harvesting. Here, we study the shift current bulk photovoltaic effect in the transition metal dichalcogenide MoS$_2$. We present a simple automated method to guide materials design and use it to uncover a distortion to monolayer $2H$-MoS$_2$ that dramatically enhances the integrated shift current. Using this distortion, we show that overlap in the Brillouin zone of the distributions of the shift vector (a quantity measuring the net displacement in real space of coherent wave packets during excitation) and the transition intensity is crucial for increasing the shift current. The distortion pattern is related to the material polarization and can be realized through an applied electric field via the converse piezoelectric effect. This finding suggests an additional method to engineer the shift current response of materials to augment previously reported methods using mechanical strain.

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preprint2020arXiv

The shift photovoltaic current and magnetically-induced bulk photocurrent in piezoelectric sillenite crystals

Recently, it has been shown how shift and ballistic currents in piezoelectric sillenite crystals Bi$_{12}$GeO$_{20}$ and Bi$_{12}$SiO$_{20}$ can be separated experimentally under the assumption that the shift component of the circular current is small. However, it has been claimed that the shift and ballistic currents cannot be quantified by this method, due to the magneto-photovoltaic effect caused either by the change of the crystal's spatial symmetry in the magnetic field or by the breaking of time-reversal symmetry. Presently, we report observations of photovoltaic currents in Bi$_{12}$SiO$_{20}$, excited by linearly- and circularly-polarized light under weak external magnetic field, as well as measurements of the corresponding photo-Hall signals. We demonstrate that the magneto-photovoltaic current constitutes a significant fraction of the measured current in the Hall direction for Bi$_{12}$SiO$_{20}$ under specific experimental conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The tetragonal phase of CH$_{3}$NH$_{3}$PbI$_{3}$ is strongly anharmonic

Halide perovskite (HP) semiconductors exhibit unique strong coupling between the electronic and structural dynamics. The high-temperature cubic phase of HPs is known to be entropically stabilized, with imaginary frequencies in the calculated phonon dispersion relation. Similar calculations, based on the static average crystal structure, predict a stable tetragonal phase with no imaginary modes. This work shows that in contrast to standard theory predictions, the room-temperature tetragonal phase of CH$_{3} $NH$_{3} $PbI$_{3}$ is strongly anharmonic. We use Raman polarization-orientation (PO) measurements and \textit{ab initio} molecular dynamics (AIMD) to investigate the origin and temperature evolution of the strong structural anharmonicity throughout the tetragonal phase. Raman PO measurements reveal a new spectral feature that resembles a soft mode. This mode shows an unusual continuous increase in damping with temperature which is indicative of an anharmonic potential surface. The analysis of AIMD trajectories identifies two major sources of anharmonicity: the orientational unlocking of the [CH$_{3} $NH$_{3}$]$^+$ ions and large amplitude octahedral tilting that continuously increases with temperature. Our work suggests that the standard phonon picture cannot describe the structural dynamics of tetragonal CH$_{3} $NH$_{3} $PbI$_{3}$.

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preprint2019arXiv

Halide perovskites under polarized light: Vibrational symmetry analysis using polarized Raman

In the last decade, hybrid organic-inorganic halide perovskites have emerged as a new type of semiconductor for photovoltaics and other optoelectronic applications. Unlike standard, tetrahedrally bonded semiconductors (e.g. Si and GaAs), the ionic thermal fluctuations in the halide perovskites (i.e. structural dynamics) are strongly coupled to the electronic dynamics. Therefore, it is crucial to obtain accurate and detailed knowledge about the nature of atomic motions within the crystal. This has proved to be challenging due to low thermal stability and the complex, temperature dependent structural phase sequence of the halide perovskites. Here, these challenges are overcome and a detailed analysis of the mode symmetries is provided in the low-temperature orthorhombic phase of methylammonium-lead iodide. Raman measurements using linearly- and circularly- polarized light at 1.16 eV excitation are combined with density functional perturbation theory (DFPT). By performing an iterative analysis of Raman polarization-orientation dependence and DFPT mode analysis, the crystal orientation is determined. Subsequently, accounting for birefringence effects detected using circularly polarized light excitation, the symmetries of all the observed Raman-active modes at 10 K are assigned.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys

Despite the growing interest in topological materials, the difficulty of experimentally synthesizing and integrating them with other materials has been one of the main barriers restricting access to their unique properties. Recent advances in synthesizing metastable phases of crystalline materials can help to overcome this barrier and offer new platforms to experimentally study and manipulate band topology. Because III-V semiconductors have a wide range of functional material applications (including optoelectronic devices, light-emitting diodes, and highly efficient solar cells), and because Bi-doped III-V materials can be synthesized by ion plantation and ion-cutoff methods, we revisit the effect of bismuth substitution in metastable III-V semiconductors. Through first-principles calculation methods, we show that in wurtzite structure III-V materials, Bi substitution can lead to band inversion phenomena and induce nontrivial topological properties. Specifically, we identify that GaBi and InBi are Dirac-Weyl semimetals, characterized by the coexistence of Dirac points and Weyl points, and $\text{GaAs}_{0.5} \text{Bi}_{0.5}$, $\text{GaSb}_{0.5} \text{Bi}_{0.5}$, $\text{InSb}_{0.5} \text{Bi}_{0.5}$ are triple-point semimetals, characterized by two sets of "near Dirac" triple points on the Fermi level. These experimentally-accessible bismuth-based topological semimetals can be integrated into the large family of functional III-V materials for experimental studies of heterostructures and future optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Shift current bulk photovoltaic effect influenced by quasiparticles and excitons

We compute the shift current bulk photovoltaic effect (BPVE) in bulk BaTiO$_3$ and two-dimensional monochalcogenide SnSe considering quasi-particle corrections and exciton effects. We explore changes in shift current peak position and magnitude reduction due to band renormalization. For BaTiO$_3$, we demonstrate that shift current is reduced near the band edge due to exciton effects. Comparison of these results with experiments on BaTiO$_3$ indicate that mechanisms other than shift current may be contributing to BPVE. Additionally, we reveal that the shift current near the band gap shows only a small change due to excitons in two-dimensional SnSe, suggesting that the thin film geometry provides a feasible way to reduce the exciton effect on the shift current. These results suggest that many-body corrections are important for accurate assessments of bulk photovoltaic materials and to understand the mechanisms behind the BPVE

0 citations0 reviewsNo code linkedOpen access