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Researcher profile

Albert F. Rigosi

Albert F. Rigosi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.chem-phcond-mat.otherphysics.app-phphysics.comp-phphysics.ins-detphysics.pop-ph

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Published work

19 published item(s)

preprint2022arXiv

A Comprehensive Study on the Spectroscopic Characterization and Molecular Dynamics Simulation of Pristine and Functionalized Graphene Nanoplatelets for Gas Sensing Applications

Graphene nanoplatelets (GnPs) are promising candidates for gas sensing applications because they have a high surface area to volume ratio, high conductivity, and a high temperature stability. Also, they cost less to synthesize, and they are lightweight, making them even more attractive than other 2D carbon-based materials. In this paper, the surface and structural properties of pristine and functionalized GnPs, specifically with carboxyl, ammonia, carboxyl, nitrogen, oxygen, fluorocarbon, and argon, were examined with Raman spectroscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction (XRD) to determine the functional groups present and effects of those groups on the structural and vibrational properties. We attribute certain features in the observed Raman spectra to the variations in concentration of the functionalized GnPs. XRD results show smaller crystallite sizes for functionalized GnPs samples that agree with images acquired with scanning electron microscopy. Lastly, a molecular dynamics simulation is employed to gain a better understanding of the Raman and adsorption properties of pristine GnPs.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Algorithm for constructing customized quantized resistances in graphene $p-n$ junctions

An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield fractional multiples of the typical quantized Hall resistance at the $ν=2$ plateau $R_H \approx 12906 Ω$ and take the form: $\frac{a}{b}R_H$. This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene-based devices with multiple source and drain terminals.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Algorithms for determining resistances in quantum Hall annuli with p-n junctions

Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is crucial, as seen in fields like resistance metrology, where graphene devices are required to accommodate currents of the order 100 μA to be compatible with existing infrastructure. However, fabrication of these devices still poses many difficulties. In this work, unusual quantized resistances are observed in epitaxial graphene Corbino p-n junction devices held at the i=2 plateau and agree with numerical simulations performed with the LTspice circuit simulator. The formulae describing experimental and simulated data are empirically derived for generalized placement of up to three current terminals and accurately reflects observed partial edge channel cancellation. These results support the use of ultraviolet lithography as a way to scale up graphene-based devices with suitably narrow junctions that could be applied in a variety of subfields

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Diffraction Patterns of Apertures Shaped as National Borders

How aesthetically pleasing is your country's diffraction pattern? This work summarizes the calculated and experimental Fraunhofer diffraction patterns obtained from using apertures lithographically formed into shapes of national borders. Calculations are made based on the fast Fourier transform of the aperture images. The entropy of each of the 113 nations' diffraction patterns was also computed based on its two-dimensional gradient. Results suggest that most nations' diffraction patterns fall under one of two prominent trends forming as a function of geographical area, with one trend being less entropic than the other.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Expansion of Graphene-Based Device Technology for Resistance Metrology

The field of Quantum Hall metrology had a strong start with the implemntation of GaAs-based devices, given that 2D materials systems provided access to interesting quantum phenomena, including the infrastructure associated with making relevant measurements. With the technology laid out, further improvements in both infrastructure and standards were achieved in the previous two decades as EG-based quantized Hall resistance (QHR) devices became established as national standards. Since the metrology community has reached some understanding that a comparison against GaAs-based QHR devices had been accomplished, the next steps became clearer as far as how the EG-based QHR with a single Hall bar could be further developed. Since the early 90s, it has been of modest interest that QHR devices have a means of interconnecting several single Hall bar elements and has since been a subject of research. NMIs are now presently at a juncture where consideration must be granted beyond just simplicity of operation. A natural direction for resistance standards would be to increase the total accessible parameter space. This means using EG-based QHR devices to output more than the single value at the $ν= 2$ plateau (about 12.9 k$Ω$). A first natural question is whether one may use the $ν= 6$ plateau or $ν= 10$ plateau, and though some work has been done with these Landau levels in graphene, they simply do not offer the same level of precision as the $ν= 2$ plateau.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Fabrication of quantum Hall p-n junction checkerboards

Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically calculated with the LTspice circuit simulator. From the devices' functionality, more complex embodiments of the quantum Hall resistance checkerboard were simulated to highlight the parameter space within which these devices could operate. Moreover, these measurements suggest that the scalability of p-n junction fabrication on millimetre or centimetre scales is feasible with regards to graphene device manufacturing by using the far more efficient process of standard ultraviolet lithography.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs

In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts. Standard devices for metrology have been restricted to having a single quantized value output based on the $ν$ = 2 Landau level. With the demonstrations herein of devices having multiple outputs of quantized values available simultaneously, these versatile devices can be used to disseminate the ohm globally. Such devices are designed to give access to quantized resistance values over the range of three orders of magnitude, starting as low as the standard value of approximately 12.9 k$Ω$ and reaching as high as 1.29 M$Ω$. Several experimental methods are used to assess the quality and versatility of the devices, including standard lock-in techniques and Raman spectroscopy.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Historical Context and Outlook of Quantum Hall Research for the Redefined SI

To fully appreciate the impacts that the discovery of the quantum Hall effect had on electrical metrology, it may benefit the reader to cultivate a general understanding of the phenomenon. Two-dimensional electron systems can exhibit many interesting quantum phenomena. The QHE may be exhibited by a 2D electron system when placed under a strong magnetic field perpendicular to the plane of the system. These conditions allow for Landau quantization, or the discretization of available energies of the electrons affected by the magnetic field. These energy values, determined by solving the Schrödinger equation, are known as Landau levels. During the course of a QHE measurement, one defines the Hall resistance Rxy as the measured voltage, perpendicular to the direction of the applied current, divided by that same current. The characteristic longitudinal resistivity \r{ho}xx goes to zero as Rxy approaches a quantized value (nominally called a plateau).

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Large-scale five- and seven-junction epitaxial graphene devices

The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the form a/b R_H and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Marking the Graphene Era in Disseminating the Redefined SI

The history of quantum Hall standards stretches several decades and mostly begins with the use of GaAs given that 2D electron systems exhibit interesting quantum phenomena. At the end 2000s, research in 2D materials like graphene became prevalent. The QHE was observed and quickly became accessible to metrologists. QHR devices were becoming graphene-based, with fabrications performed by chemical vapor deposition (CVD), epitaxial growth, and the exfoliation of graphite. Given the many methods of available graphene synthesis, efforts to find an optimal synthesis method for metrological purposes were underway. Exfoliated graphene was widely known to exhibit the highest mobilities due to its pristine crystallinity. It was a primary initial candidate as far as metrological testing was concerned.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Nonconventional Quantized Hall Resistances Obtained with $ν= 2$ Equilibration in Epitaxial Graphene $p-n$ Junctions

We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at $ν=2$ ($R_H\approx 12906 Ω$) that take the form: $\frac{a}{b}R_H$. Here, $a$ and $b$ have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of $R_H$. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantum Hall $p-n$ Junction Dartboards Using Graphene Annuli

The use of multiple current terminals on millimeter-scale graphene $p-n$ junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, have enabled the measurement of several fractional multiples of the quantized Hall resistance at the $ν=2$ plateau ($R_H\approx 12906 Ω$). Experimentally obtained values agreed with corresponding numerical simulations performed with the LTspice circuit simulator. More complicated designs of the quantum Hall resistance dartboard were simulated to establish the potential parameter space within which these Corbino-type devices could output resistance. Most importantly, these measurements support simpler processes of ultraviolet lithography as a more efficient means of scaling up graphene-based device sizes while maintaining sufficiently narrow junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Review of Theoretical and Computational Methods for 2D Materials Exhibiting Charge Density Waves

Two-dimensional (2D) materials that exhibit charge density waves (CDWs) have generated many research endeavors in the hopes of employing their exotic properties for various quantum-based technologies. Early investigations surrounding CDWs were mostly focused on bulk materials. However, applications for quantum devices have since required devices to be constructed from few-layer material to fully utilize the material's properties. This field has greatly expanded over the decades, warranting a focus on the computational efforts surrounding CDWs in 2D materials. In this review, we will cover ground in the following relevant, theory-driven subtopics for TaS2 and TaSe2: summary of general computational techniques and methods, atomic structures, Raman modes, and effects of confinement and dimensionality. Through understanding how the computational methods have enabled incredible advancements in quantum materials, one may anticipate the ever-expanding directions available for continued pursuit as the field brings us through the 21st century.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Simulation of Graphene Nanoplatelets for NO$_{2}$ and CO Gas Sensing at Room Temperature

This work reports the modeling and simulation of gas sensors made from pristine graphene nanoplatelets (P-GnPs) using COMSOL Multiphysics software. The mass balance equation was solved while including contributions of electromigration flux. An example GnP-based gas sensor was simulated to undergo exposure to NO2 and CO gases at different concentrations to understand the effects of adsorption. Various electrical properties and the overall sensor responses were also studied as a function of gas concentration in order to determine how viable such sensors could be for target gases. The results herein show that the resistance of the P-GnP-based gas sensor decreases when exposed to NO2 gas whereas an opposite trend is seen when CO gas is used for exposures, ultimately suggesting that the P-GnPs exhibit p-type behavior. Sensitivities of 23 % and 60 % were achieved when the P-GnP-based gas sensor was exposed to 10 mol/m3 concentration of NO2 and CO at room temperature, respectively. The data heavily suggest that a higher sensitivity towards CO may be observed in future sensors. These simulations will benefit research efforts by providing a method for predicting the behavior of GnP-based gas sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spectroscopic assessment of short-term nitric acid doping of epitaxial graphene

This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device processing can be a suitable alternative to large-scale, metallic gating. Most measurements are performed post-exposure at room temperature, and, for some electrical transport measurements, at 1.5 K. Vacuum conditions are applied to many measurements to replicate the laboratory conditions under which devices using this doping method would be measured. The relevant timescales from transport measurements are compared with results from X-ray photoelecton spectroscopy and Fourier transform infrared spectroscopy measurements, with the latter performed at ambient conditions and accompanied by calculations of the spectra in the Reststrahlen band.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Timescales for Nitric Acid Desorption in Epitaxial Graphene Devices

This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole doping without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and optical properties of several devices post-exposure were performed with transport temperatures between 300 K and 1.5 K. Ambient conditions are applied to non-transport measurements to replicate the most likely laboratory conditions for handling devices using this doping method. The relevant timescales from transport measurements are compared with results from Raman spectroscopy measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

A Non-Topological Approach to Understanding Weyl Semimetals

In this work, chiral anomalies and Drude enhancement in Weyl semimetals are separately discussed from a semi-classical and quantum perspective, clarifying the physics behind Weyl semimetals while avoiding explicit use of topological concepts. The intent is to provide a bridge to these modern ideas for educators, students, and scientists not in the field using the familiar language of traditional solid-state physics at the graduate or advanced undergraduate physics level.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Geometric interference in a high-mobility graphene annulus p-n junction device

The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the peaks resulting from those patterns are independent of temperature and magnetic field. Furthermore, these patterns are not attributable to Aharonov-Bohm oscillations, Fabry Perot interference at the junction, or moiré potentials. The device data are compared with those of another device fabricated with a traditional Hall bar geometry, as well as with quantum transport simulation data. Since the two devices are of different topological classes, the subtle differences observed in the corresponding measured data indicate that the most likely source of the observed geometric interference patterns is quantum scarring.

0 citations0 reviewsNo code linkedOpen access