Researcher profile

Kevin F. Garrity

Kevin F. Garrity contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2022arXiv

On the Role of Defects in the Electronic Structure of MnBi$_{2-x}$Sb$_x$Te$_4$

Elemental substitution is a proven method of Fermi level tuning in topological insulators, which is needed for device applications. Through static and time resolved photoemission, we show that in MnBi$_2$Te$_4$, elemental substitution of Bi with Sb indeed tunes the Fermi level towards the bulk band gap, making the material charge neutral at 35\% Sb concentration. For the first time, we are able to directly probe the excited state band structure at this doping level, and their dynamics, which show that the decay channels at the Fermi level are severely restricted. However, elemental substitution widens the surface state gap, which we attribute to the increase in antisite defects resulting from Sb substitution. This hypothesis is supported by DFT calculations that include defects, which show a sensitivity of the topological surface state to their inclusion. Our results emphasize the need for defect control if MnBi$_{2-x}$Sb$_x$Te$_4$ is to be used for device applications.

preprint2022arXiv

Topological Phases of Mn$A_{2}$$X_{4}$ (A=Bi, Sb; X = Se, Te) under Magnetic Field

The concept of electronic topology and the associated topological protection brings excellent opportunities for developing next-generation devices. Ideally, magnetic topological materials (MTM) should have their Dirac/Weyl points and/or associated mass gaps at the Fermi energy (EF) or be readily tunable such that they can be placed at EF via external perturbations such as electric field gating, chemical substitutions, or doping. Three-dimensional antiferromagnetic (AFM) materials like Mn$Bi_{2}$$X_{4}$ (X=Se, Te) that have strong spin-orbit coupling (SOC) and broken time-reversal symmetry (TRS) due to magnetic ordering have been the subject of enormous interest.. In this work, using density functional theory (DFT), we have studied the electronic properties and topological phases of the first intrinsic magnetic topological insulator family Mn$Bi_{2}$$Te_{4}$ (MBT) in the presence of an external magnetic field. Our calculations reveal that the topological phase of bulk rhombohedral (R$\overline{3}$m) Mn$A_{2}$$X_{4}$ (A = Sb, Bi; X=Se, Te) depends on the spin direction and the chemistry. The antiferromagnetic (AFM) ground state of Mn$Sb_{2}$$Se_{4}$ (MSS) is a trivial insulator, whereas the AFM ground state of Mn$Bi_{2}$$Se_{4}$(MBS) is an Axion insulator. Both materials become nodal point or nodal line Weyl semimetals in the presence of a sufficiently strong external magnetic field. The AFM ground state of Mn$Sb_{2}$$Te_{4}$ (MST) is an Axion insulator. MST is a type-II Weyl semimetal with spins aligned in the $\hat{Z}$-direction, but becomes insulating with an inverted band gap for spins in-plane. Similarly, the AFM phase of MBT is an Axion insulator, but remains insulating with an inverted gap in the ferromagnetic phase. Additionally, we demonstrated the evolution of the topological phase of Mn$Bi_{2}$$Te_{4}$ (MBT) by substituting the Bi atoms with the Sb atoms.

preprint2021arXiv

Topological surface states of MnBi$_2$Te$_4$ at finite temperatures and at domain walls

MnBi$_2$Te$_4$ has recently been the subject of intensive study, due to the prediction of axion insulator, Weyl semimetal, and quantum anomalous Hall insulator phases, depending on the structure and magnetic ordering. Experimental results have confirmed some aspects of this picture, but several experiments have seen zero-gap surfaces states at low temperature, in conflict with expectations. In this work, we develop a first-principles-based tight-binding model that allows for arbitrary control of the local spin direction and spin-orbit coupling, enabling us to accurately treat large unit-cells. Using this model, we examine the behavior of the topological surface state as a function of temperature, finding a gap closure only above the Néel temperature. In addition, we examine the effect of magnetic domains on the electronic structure, and we find that the domain wall zero-gap states extend over many unit-cells. These domain wall states can appear similar to the high temperature topological surface state when many domain sizes are averaged, potentially reconciling theoretical results with experiments.

preprint2020arXiv

Computational Search for Magnetic and Non-magnetic 2D Topological Materials using Unified Spin-orbit Spillage Screening

Two-dimensional topological materials (TMs) have a variety of properties that make them attractive for applications including spintronics and quantum computation. However, there are only a few such experimentally known materials. To help discover new 2D TMs, we develop a unified and computationally inexpensive approach to identify magnetic and non-magnetic 2D TMs, including gapped and semi-metallic topological classifications, in a high-throughput way using density functional theory-based spin-orbit spillage, Wannier-interpolation, and related techniques. We first compute the spin-orbit spillage for the ~1000 2D materials in the JARVIS-DFT dataset (https://www.ctcms.nist.gov/~knc6/JVASP.html ), resulting in 122 materials with high-spillage values. Then, we use Wannier-interpolation to carry-out Z2, Chern-number, anomalous Hall conductivity, Curie temperature, and edge state calculations to further support the predictions. We identify various topologically non-trivial classes such as quantum spin-hall insulators (QSHI), quantum anomalous-hall insulators (QAHI), and semimetals. For a few predicted materials, we run G0W0+SOC and DFT+U calculations. We find that as we introduce many-body effects, only a few materials retain non-trivial band-topology, suggesting the importance of high-level DFT methods in predicting 2D topological materials. However, as an initial step, the automated spillage screening and Wannier-approach provide useful predictions for finding new topological materials and to narrow down candidates for experimental synthesis and characterization.

preprint2020arXiv

Database of Wannier Tight-binding Hamiltonians using High-throughput Density Functional Theory

We develop a computational workflow for high-throughput Wannierization of density functional theory (DFT) based electronic band structure calculations. We apply this workflow to 1771 materials, and we create a database with the resulting Wannier-function based tight binding Hamiltonians (WTBH). We evaluate the accuracy of the WTBHs by comparing the Wannier band structures to directly calculated DFT band structures on both the set of k-points used in the Wannierization as well as independent k-points from high symmetry lines. Accurate WTBH can be used for the calculation of many materials properties, and we include a few example applications. We also develop a web-app that can be used to predict electronic properties on-the-fly using WTBH from our database. The tools to generate the Hamiltonian and the database of the WTB parameters will be made publicly available through the websites https://github.com/usnistgov/jarvis and https://www.ctcms.nist.gov/jarviswtb.

preprint2020arXiv

Distinct magneto-Raman signatures of spin-flip phase transitions in CrI3

The discovery of 2-dimensional (2D) materials, such as CrI3, that retain magnetic ordering at monolayer thickness has resulted in a surge of research in 2D magnetism from both pure and applied perspectives. Here, we report a magneto-Raman spectroscopy study on multilayered CrI3, focusing on two new features in the spectra which appear at temperatures below the magnetic ordering temperature and were previously assigned to high frequency magnons. We observe a striking evolution of the Raman spectra with increasing magnetic field in which clear, sudden changes in intensities of the modes are attributed to the interlayer ordering changing from antiferromagnetic to ferromagnetic at a critical magnetic field. Our work highlights the sensitivity of the Raman modes to weak interlayer spin ordering in CrI3. In addition, we theoretically examine potential origins for the new modes, which we deduce are unlikely single magnons.

preprint2020arXiv

High-throughput Density Functional Perturbation Theory and Machine Learning Predictions of Infrared, Piezoelectric and Dielectric Responses

Many technological applications depend on the response of materials to electric fields, but available databases of such responses are limited. Here, we explore the infrared, piezoelectric and dielectric properties of inorganic materials by combining high-throughput density functional perturbation theory and machine learning approaches. We compute Γ-point phonons, infrared intensities, Born-effective charges, piezoelectric, and dielectric tensors for 5015 non-metallic materials in the JARVIS-DFT database. We find 3230 and 1943 materials with at least one far and mid-infrared mode, respectively. We identify 577 high-piezoelectric materials, using a threshold of 0.5 C/m2. Using a threshold of 20, we find 593 potential high-dielectric materials. Importantly, we analyze the chemistry, symmetry, dimensionality, and geometry of the materials to find features that help explain variations in our datasets. Finally, we develop high-accuracy regression models for the highest infrared frequency and maximum Born-effective charges, and classification models for maximum piezoelectric and average dielectric tensors to accelerate discovery.