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Kevin F. Garrity

Kevin F. Garrity appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.other

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Published work

17 published item(s)

preprint2022arXiv

On the Role of Defects in the Electronic Structure of MnBi$_{2-x}$Sb$_x$Te$_4$

Elemental substitution is a proven method of Fermi level tuning in topological insulators, which is needed for device applications. Through static and time resolved photoemission, we show that in MnBi$_2$Te$_4$, elemental substitution of Bi with Sb indeed tunes the Fermi level towards the bulk band gap, making the material charge neutral at 35\% Sb concentration. For the first time, we are able to directly probe the excited state band structure at this doping level, and their dynamics, which show that the decay channels at the Fermi level are severely restricted. However, elemental substitution widens the surface state gap, which we attribute to the increase in antisite defects resulting from Sb substitution. This hypothesis is supported by DFT calculations that include defects, which show a sensitivity of the topological surface state to their inclusion. Our results emphasize the need for defect control if MnBi$_{2-x}$Sb$_x$Te$_4$ is to be used for device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Topological Phases of Mn$A_{2}$$X_{4}$ (A=Bi, Sb; X = Se, Te) under Magnetic Field

The concept of electronic topology and the associated topological protection brings excellent opportunities for developing next-generation devices. Ideally, magnetic topological materials (MTM) should have their Dirac/Weyl points and/or associated mass gaps at the Fermi energy (EF) or be readily tunable such that they can be placed at EF via external perturbations such as electric field gating, chemical substitutions, or doping. Three-dimensional antiferromagnetic (AFM) materials like Mn$Bi_{2}$$X_{4}$ (X=Se, Te) that have strong spin-orbit coupling (SOC) and broken time-reversal symmetry (TRS) due to magnetic ordering have been the subject of enormous interest.. In this work, using density functional theory (DFT), we have studied the electronic properties and topological phases of the first intrinsic magnetic topological insulator family Mn$Bi_{2}$$Te_{4}$ (MBT) in the presence of an external magnetic field. Our calculations reveal that the topological phase of bulk rhombohedral (R$\overline{3}$m) Mn$A_{2}$$X_{4}$ (A = Sb, Bi; X=Se, Te) depends on the spin direction and the chemistry. The antiferromagnetic (AFM) ground state of Mn$Sb_{2}$$Se_{4}$ (MSS) is a trivial insulator, whereas the AFM ground state of Mn$Bi_{2}$$Se_{4}$(MBS) is an Axion insulator. Both materials become nodal point or nodal line Weyl semimetals in the presence of a sufficiently strong external magnetic field. The AFM ground state of Mn$Sb_{2}$$Te_{4}$ (MST) is an Axion insulator. MST is a type-II Weyl semimetal with spins aligned in the $\hat{Z}$-direction, but becomes insulating with an inverted band gap for spins in-plane. Similarly, the AFM phase of MBT is an Axion insulator, but remains insulating with an inverted gap in the ferromagnetic phase. Additionally, we demonstrated the evolution of the topological phase of Mn$Bi_{2}$$Te_{4}$ (MBT) by substituting the Bi atoms with the Sb atoms.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Topological surface states of MnBi$_2$Te$_4$ at finite temperatures and at domain walls

MnBi$_2$Te$_4$ has recently been the subject of intensive study, due to the prediction of axion insulator, Weyl semimetal, and quantum anomalous Hall insulator phases, depending on the structure and magnetic ordering. Experimental results have confirmed some aspects of this picture, but several experiments have seen zero-gap surfaces states at low temperature, in conflict with expectations. In this work, we develop a first-principles-based tight-binding model that allows for arbitrary control of the local spin direction and spin-orbit coupling, enabling us to accurately treat large unit-cells. Using this model, we examine the behavior of the topological surface state as a function of temperature, finding a gap closure only above the Néel temperature. In addition, we examine the effect of magnetic domains on the electronic structure, and we find that the domain wall zero-gap states extend over many unit-cells. These domain wall states can appear similar to the high temperature topological surface state when many domain sizes are averaged, potentially reconciling theoretical results with experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Computational Search for Magnetic and Non-magnetic 2D Topological Materials using Unified Spin-orbit Spillage Screening

Two-dimensional topological materials (TMs) have a variety of properties that make them attractive for applications including spintronics and quantum computation. However, there are only a few such experimentally known materials. To help discover new 2D TMs, we develop a unified and computationally inexpensive approach to identify magnetic and non-magnetic 2D TMs, including gapped and semi-metallic topological classifications, in a high-throughput way using density functional theory-based spin-orbit spillage, Wannier-interpolation, and related techniques. We first compute the spin-orbit spillage for the ~1000 2D materials in the JARVIS-DFT dataset (https://www.ctcms.nist.gov/~knc6/JVASP.html ), resulting in 122 materials with high-spillage values. Then, we use Wannier-interpolation to carry-out Z2, Chern-number, anomalous Hall conductivity, Curie temperature, and edge state calculations to further support the predictions. We identify various topologically non-trivial classes such as quantum spin-hall insulators (QSHI), quantum anomalous-hall insulators (QAHI), and semimetals. For a few predicted materials, we run G0W0+SOC and DFT+U calculations. We find that as we introduce many-body effects, only a few materials retain non-trivial band-topology, suggesting the importance of high-level DFT methods in predicting 2D topological materials. However, as an initial step, the automated spillage screening and Wannier-approach provide useful predictions for finding new topological materials and to narrow down candidates for experimental synthesis and characterization.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Database of Wannier Tight-binding Hamiltonians using High-throughput Density Functional Theory

We develop a computational workflow for high-throughput Wannierization of density functional theory (DFT) based electronic band structure calculations. We apply this workflow to 1771 materials, and we create a database with the resulting Wannier-function based tight binding Hamiltonians (WTBH). We evaluate the accuracy of the WTBHs by comparing the Wannier band structures to directly calculated DFT band structures on both the set of k-points used in the Wannierization as well as independent k-points from high symmetry lines. Accurate WTBH can be used for the calculation of many materials properties, and we include a few example applications. We also develop a web-app that can be used to predict electronic properties on-the-fly using WTBH from our database. The tools to generate the Hamiltonian and the database of the WTB parameters will be made publicly available through the websites https://github.com/usnistgov/jarvis and https://www.ctcms.nist.gov/jarviswtb.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Distinct magneto-Raman signatures of spin-flip phase transitions in CrI3

The discovery of 2-dimensional (2D) materials, such as CrI3, that retain magnetic ordering at monolayer thickness has resulted in a surge of research in 2D magnetism from both pure and applied perspectives. Here, we report a magneto-Raman spectroscopy study on multilayered CrI3, focusing on two new features in the spectra which appear at temperatures below the magnetic ordering temperature and were previously assigned to high frequency magnons. We observe a striking evolution of the Raman spectra with increasing magnetic field in which clear, sudden changes in intensities of the modes are attributed to the interlayer ordering changing from antiferromagnetic to ferromagnetic at a critical magnetic field. Our work highlights the sensitivity of the Raman modes to weak interlayer spin ordering in CrI3. In addition, we theoretically examine potential origins for the new modes, which we deduce are unlikely single magnons.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-throughput Density Functional Perturbation Theory and Machine Learning Predictions of Infrared, Piezoelectric and Dielectric Responses

Many technological applications depend on the response of materials to electric fields, but available databases of such responses are limited. Here, we explore the infrared, piezoelectric and dielectric properties of inorganic materials by combining high-throughput density functional perturbation theory and machine learning approaches. We compute Γ-point phonons, infrared intensities, Born-effective charges, piezoelectric, and dielectric tensors for 5015 non-metallic materials in the JARVIS-DFT database. We find 3230 and 1943 materials with at least one far and mid-infrared mode, respectively. We identify 577 high-piezoelectric materials, using a threshold of 0.5 C/m2. Using a threshold of 20, we find 593 potential high-dielectric materials. Importantly, we analyze the chemistry, symmetry, dimensionality, and geometry of the materials to find features that help explain variations in our datasets. Finally, we develop high-accuracy regression models for the highest infrared frequency and maximum Born-effective charges, and classification models for maximum piezoelectric and average dielectric tensors to accelerate discovery.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

First principles search for $n$-type oxide, nitride, and sulfide thermoelectrics

Oxides have many potentially desirable characteristics for thermoelectric applications, including low cost and stability at high temperatures, but thus far there are few known high $zT$ $n$-type oxide thermoelectrics. In this work, we use high-throughput first principles calculations to screen transition metal oxides, nitrides, and sulfides for candidate materials with high power factors and low thermal conductivity. We find a variety of promising materials, and we investigate these materials in detail in order to understand the mechanisms that cause them to have high power factors. These materials all combine a high density of states near the Fermi level with dispersive bands, reducing the trade-off between the Seebeck coefficient and the electrical conductivity, but they do so for several different reasons. In addition, our calculations indicate that many of our candidate materials have low thermal conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Flux states and topological phases from spontaneous time-reversal symmetry breaking in CrSi(Ge)Te$_3$-based systems

We study adatom-covered single layers of CrSiTe$_3$ and CrGeTe$_3$ using first-principles calculations based on hybrid functionals. We find that the insulating ground state of a monolayer of La (Lu) deposited on single-layer CrSiTe$_3$ (CrGeTe$_3$) carries spontaneously generated current loops around the Cr sites, These "flux states" induce antiferromagnetically ordered orbital moments on the Cr sites and are also associated with nontrivial topological properties. The calculated Chern numbers for these systems are predicted to be $\pm 1$ even in the absence of spin-orbit coupling, with sizable gaps on the order of 100 meV. The flux states and the associated topological phases result from spontaneous time-reversal symmetry breaking due to the presence of nonlocal Coulomb interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Intertwined Rashba, Dirac and Weyl Fermions in Hexagonal Hyperferroelectrics

By means of density functional theory based calculations, we study the role of spin-orbit coupling in the new family of ABC hyperferroelectrics [Phys. Rev. Lett. 112, 127601 (2014)]. We unveil an extremely rich physics strongly linked to ferroelectric properties, ranging from the electric control of bulk Rashba effect to the existence of a three dimensional topological insulator phase, with concomitant topological surface states even in the ultrathin film limit. Moreover, we predict that the topological transition, as induced by alloying, is followed by a Weyl semi-metal phase of finite concentration extension, which is robust against disorder, putting forward hyperferroelectrics as promising candidates for spin-orbitronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Antiferroelectricity in thin film ZrO2 from first principles

Density functional calculations are performed to investigate the experimentally-reported field-induced phase transition in thin-film ZrO2 (J. Muller et al., Nano. Lett. 12, 4318). We find a small energy difference of ~ 1 meV/f.u. between the nonpolar tetragonal and polar orthorhombic structures, characteristic of antiferroelectricity. The requisite first-order transition between the two phases, which atypically for antiferroelectrics have a group-subgroup relation, results from coupling to other zone-boundary modes, as we show with a Landau-Devonshire model. Tetragonal ZrO2 is thus established as a previously unrecognized lead-free antiferroelectric with excellent dielectric properties and compatibility with silicon. In addition, we demonstrate that a ferroelectric phase of ZrO2 can be stabilized through epitaxial strain, and suggest an alternative stabilization mechanism through continuous substitution of Zr by Hf.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Chern insulator at a magnetic rocksalt interface

Considerable efforts have recently been devoted to the experimental realization of a two-dimensional Chern insulator, i.e., a system displaying a quantum anomalous Hall effect. However, existing approaches such as those based on magnetic doping of topological-insulator thin films have resulted in small band gaps, restricting the effect to low temperatures. We use first-principles calculations to demonstrate that an interface between thin films of the topologically trivial ferromagnetic insulators EuO and GdN can result in a band inversion and a non-zero Chern number. Both materials are stoichiometric and the interface is non-polar and lattice-matched, which should allow this interface to be achievable experimentally. We show that the band structure can be tuned by layer thickness or epitaxial strain, and can result in Chern insulators with gaps of over 0.1 eV.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Hyperferroelectrics: proper ferroelectrics with persistent polarization

All known proper ferroelectrics are unable to polarize normal to a surface or interface if the resulting depolarization field is unscreened, but there is no fundamental principle that enforces this behavior. In this work, we introduce hyperferroelectrics, a new class of proper ferroelectrics which polarize even when the depolarization field is unscreened, this condition being equivalent to instability of a longitudinal optic mode in addition to the transverse-optic-mode instability characteristic of proper ferroelectrics. We use first principles calculations to show that several recently discovered hexagonal ferroelectric semiconductors have this property, and we examine its consequences both in the bulk and in a superlattice geometry.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Wannier Center Sheets in Topological Insulators

We argue that various kinds of topological insulators (TIs) can be insightfully characterized by an inspection of the charge centers of the hybrid Wannier functions, defined as the orbitals obtained by carrying out a Wannier transform on the Bloch functions in one dimension while leaving them Bloch-like in the other two. From this procedure, one can obtain the Wannier charge centers (WCCs) and plot them in the two-dimensional projected Brillouin zone. We show that these WCC sheets contain the same kind of topological information as is carried in the surface energy bands, with the crucial advantage that the topological properties of the bulk can be deduced from bulk calculations alone. The distinct topological behaviors of these WCC sheets in trivial, Chern, weak, strong, and crystalline TIs are first illustrated by calculating them for simple tight-binding models. We then present the results of first-principles calculations of the WCC sheets in the trivial insulator Sb$_2$Se$_3$, the weak TI KHgSb, and the strong TI Bi$_2$Se$_3$, confirming the ability of this approach to distinguish between different topological behaviors in an advantageous way.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Chern insulators from heavy atoms on magnetic substrates

We propose searching for Chern insulators by depositing atomic layers of elements with large spin-orbit coupling (e.g., Bi) on the surface of a magnetic insulator. We argue that such systems will typically have isolated surface bands with non-zero Chern numbers. If these overlap in energy, a metallic surface with large anomalous Hall conductivity (AHC) will result; if not, a Chern-insulator state will typically occur. Thus, our search strategy reduces to looking for examples having the Fermi level in a global gap extending across the entire Brillouin zone. We verify this search strategy and identify several candidate systems by using first-principles calculations to compute the Chern number and AHC of a large number of such systems on MnTe, MnSe, and EuS surfaces. Our search reveals several promising Chern insulators with gaps of up to 140\,meV.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Hexagonal $ABC$ as semiconducting ferroelectrics

We use a first-principles rational-design approach to identify a previously-unrecognized class of ferroelectric materials in the $P63mc$ LiGaGe structure type. We calculate structural parameters, polarization and ferroelectric well depths both for reported and as-yet hypothetical representatives of this class. Our results provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Orthorhombic $ABC$ semiconductors as antiferroelectrics

We use a first-principles rational-design approach to identify a previously-unrecognized class of antiferroelectric materials in the $Pnma$ MgSrSi structure type. The MgSrSi structure type can be described in terms of antipolar distortions of the nonpolar $P6_{3}/mmc$ ZrBeSi structure type, and we find many members of this structure type are close in energy to the related polar $P6_{3}mc$ LiGaGe structure type, which includes many members we predict to be ferroelectric. We highlight known $ABC$ combinations in which this energy difference is comparable to the antiferroelectric-ferroelectric switching barrier of PbZrO$_{3}$. We calculate structural parameters and relative energies for all three structure types, both for reported and as-yet hypothetical representatives of this class. Our results provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.

0 citations0 reviewsNo code linkedOpen access