Sudhir K. Pandey

Density functional study of thermodynamic properties, thermal expansion and lattice thermal conductivity of Fe $_{2}$ VAl at high temperature region

Here, we present the phonon calculations for thermodynamic properties, thermal expansion and lattice thermal conductivity of Fe $_{2}$ VAl in the temperature range of $300-800$ K and compared with existing experiment. Phonon dispersion is computed using finite displacement method and supercell approach. The positive frequencies of all the phonon modes indicate the mechanical stability of the compound. The specific heat at constant volume and Helmholtz free energy are calculated under harmonic approximation, while calculation of thermal expansion is done under quasi-harmonic approximation. Lattice thermal conductivity ( $κ_{L}$ ) is calculated using first-principle anharmonic lattice dynamics calculations. The zero-point energy and Debye temperature are computed as $\sim$ 21 kJ/mol and 638 K, respectively. The calculated thermal expansions are found to be $\sim$ 6.3 $\times$ 10 $^{-6}$ K $^{-1}$ and $\sim$ 7.2 $\times$ 10 $^{-6}$ K $^{-1}$ at 300 and 800 K, respectively. A significant deviation between calculated ( $\sim$ 48.6 W/m-K) and experimental ( $\sim$ 22.8 W/m-K) values of $κ_{L}$ are observed at 300 K. But, as the temperature increases, the calculated and experimental $κ_{L}$ come closer with the corresponding values of $\sim$ 18.2 W/m-K and $\sim$ 11.0 W/m-K at 800. The possible reasons for the deviation of $κ_{L}$ are addressed. The temperature dependent of phonon lifetime is computed in order to understand the feature of $κ_{L}$ . Present study suggests that DFT based phononic calculations provide reasonably good explanations of available experimental phonon related properties of Fe $_{2}$ VAl in the high temperature range of $300-800$ K.

Exploring temperature dependent electron-electron interaction of topological crystalline insulators (SnS and SnSe) within Matsubara-time domain

Both experimental and theoretical studies show non-trivial topological behaviour in native rocksalt phase for SnS and SnSe and categorize these materials in topological crystalline insulators. Here, the detailed electronic structures studies of SnS and SnSe in the rocksalt phase are carried out using many-body $GW$ based theory and density functional theory both for ground states and temperature dependent excited states. The estimated values of fundamental direct bandgaps around L-point using $G_0W_0$ (mBJ) are $\sim$ 0.27 ( $\sim$ 0.13) eV and $\sim$ 0.37 ( $\sim$ 0.17) eV for SnS and SnSe, respectively. The strength of hybridization between Sn 5 $p$ and S 3 $p$ (Se 4 $p$ ) orbitals for SnS (SnSe) shows strong k-dependence. The behaviour of $\overline{W}$ ( $ω$ ), which is the averaged value of diagonal matrix elements of fully screened Coulomb interaction, suggests to use full- $GW$ method for exploring the excited states because the correlation effects within these two materials are relatively weak. The temperature dependent electronic structure calculations for SnS and SnSe provide linearly decreasing behaviour of bandgaps with rise in temperatures. The existence of collective excitation of quasiparticles in form of plasmon is predicted for these compounds, where the estimated values of plasmon frequency are $\sim$ 9.5 eV and $\sim$ 9.3 eV for SnS and SnSe, respectively. The imaginary part of self-energy and mass renormalization factor ( $Z_\textbf{k}(ω)$ ) due to electron-electron interaction (EEI) are also calculated along W-L- $Γ$ direction for both the materials. The present comparative study reveals that the behaviour of temperature dependent EEI for SnS and SnSe are the almost same and EEI is important for high temperature transport properties.

First-principles evidence of type-II Weyl phonons in rock-salt Tin Chalcogenides (SnS, SnSe & SnTe) materials

Recent studies on different topological materials in condensed matter physics have provided the evidence of topological nature for bosonic particle like phonons by performing various theoretical calculations and experimental observations. Here, the topological behaviours of phonons of SnS, SnSe and SnTe materials in rock-salt structure are investigated using $ab$ - $initio$ methodology. For all these materials, the tilted linear band touching is observed along with the presence of band inversion in direction X-W. The topological point in phonon dispersion curve along X-W direction is found to be $\sim$ 2.83, $\sim$ 2.46 and $\sim$ 2.51 THz for SnS, SnSe and SnTe, respectively. The calculated numbers of Weyl points (WPs) is estimated to be 56, 24 and 54 for SnS, SnSe and SnTe, respectively. These WPs have shown conserved Chiral charges for all corresponding materials. The surface local density of states is computed for these compounds, where the surface arc is clearly seen. In case of SnS, the surface arc is found at 2.0 - 2.2 THz energy region. Also, the isofrequency surface states are investigated to observe the presence of Fermi arc for SnX (X = S, Se, Te). The present first-principles calculation predicts that SnS, SnSe and SnTe show type-II Weyl phononic behaviour along with evidence of topological phononic surface states.

Thermoelectric properties of Fe $_{2}$ VAl at high temperature region: A combined experimental and theoretical study

Heusler type compounds have long been recognized as potential thermoelectric (TE) materials. Here, the experimentally observed TE properties of Fe $_{2}$ VAl are understood through electronic structure calculations in the temperature range of $300-800$ K. The observed value of $S$ is $\sim-$ 138 $μ$ V/K at 300 K. Then, the $|S|$ decreases with increase in temperature up to the highest temperature with the value of $\sim-$ 18 $μ$ V/K at 800 K. The negative sign of $S$ in the full temperature window signifies the dominating $n$ -type character of the compound. The temperature dependent of electrical conductivity, $σ$ (thermal conductivity, $κ$ ) exhibits the increasing (decreasing) trend with the values of $\sim$ 1.2 $\times$ 10 $^{5}$ $Ω^{-1}$ m $^{-1}$ ( $\sim$ 23.7 W/m-K) and $\sim$ 2.2 $\times$ 10 $^{5}$ $Ω^{-1}$ m $^{-1}$ ( $\sim$ 15.3 W/m-K) at 300 K and 800 K, respectively. In order to understand these transport properties, the DFT based semi-classical Boltzmann theory is used. The contributions of multi-band electron and hole pockets are found to be mainly responsible for the temperature dependent trend of these properties. The decrement of $|S|$ and increment of $σ/τ$ $\&$ $κ_{e}/τ$ ( $τ$ is relaxation time) with temperature is directly related with the contribution of multiple hole pockets. Present study suggests that DFT based electronic calculations provide reasonably good explanations of experimental TE properties of Fe $_{2}$ VAl in the high temperature range of $300-800$ K.

Experimental and computational approaches to study the high temperature thermoelectric properties of novel topological semimetal CoSi

Here, we study the thermoelectric properties of topological semimetal CoSi in the temperature range $300-800$ K by using combined experimental and density functional theory (DFT) based methods. CoSi is synthesized using arc melting technique and the Rietveld refinement gives the lattice parameters of a = b = c = 4.445 Å. The measured values of Seebeck coefficient (S) shows the non-monotonic behaviour in the studied temperature range with the value of $\sim-$ 81 $μ$ V/K at room temperature. The $|S|$ first increases till 560 K ( $\sim-$ 93 $μ$ V/K) and then decreases up to 800 K ( $\sim-$ 84 $μ$ V/K) indicating the dominating n-type behaviour in the full temperature range. The electrical conductivity, $σ$ (thermal conductivity, $κ$ ) shows the monotonic decreasing (increasing) behaviour with the values of $\sim$ 5.2 $\times 10^{5}$ (12.1 W/m-K) and $\sim$ 3.6 $\times 10^{5}$ (14.2 W/m-K) $Ω^{-1}m^{-1}$ at 300 K and 800 K, respectively. The $κ$ exhibits the temperature dependency as, $κ\propto T^{0.16}$ . The DFT based Boltzmann transport theory is used to understand these behaviour. The multi-band electron and hole pockets appear to be mainly responsible for deciding the temperature dependent transport behaviour. Specifically, the decrease in the $|S|$ above 560 K and change in the slope of $σ$ around 450 K are due to the contribution of thermally generated charge carriers from the hole pockets. The temperature dependent relaxation time is computed which shows temperature dependency of $1/T^{0.35}$ . Present study suggests that electronic band-structure obtained from DFT provides reasonably good estimate of the transport coefficients of CoSi in the high temperature region of $300-800$ K.

First-principles phonon calculations for lattice dynamics, thermal expansion and lattice thermal conductivity of CoSi at high temperature region

This study presents the first-principles phonon calculations to understand the experimental thermal expansion ( $α(T)$ ) and lattice thermal conductivity ( $κ_{L}$ ) of CoSi at high temperature region. Phonon dispersion is computed using finite displacement method and supercell approach by taking the equilibrium crystal structures obtained from DFT. The calculation of $α(T)$ is done under quasi-harmonic approximation. The $κ_{L}$ is calculated using first-principle anharmonic lattice dynamics calculations under single-mode relaxation time approximation. Calculated $α(T)$ in the temperature range $0-1300$ K gives the good match with existing experimental data. The calculated value of $κ_{L}$ ( $\sim$ 8.0 W/m-K) at 300 K is found to be in good agreement with the experimental value of $\sim$ 8.3 W/m-K. The temperature dependent of phonon lifetime due to phonon-phonon interaction is calculated to understand the behaviour of $κ_{L}$ . Present study suggests that ground state phonon dispersion obtained from DFT based methods gives reasonably good explanation of experimental $α(T)$ and $κ_{L}$ .

Instrument for simultaneous measurement of Seebeck coefficient and thermal conductivity in the temperature range 300-800 K with python interfacing

Fabrication and characterization of instrument for high-temperature simultaneous measurement of Seebeck coefficient (S) and thermal conductivity ( $κ$ ) has been carried out with python automation. The steady-state based Fourier's law of thermal conduction is employed for $κ$ measurement. The parallel thermal conductance technique is implemented for heat loss measurement. Introducing the thin heater and insulating heater base minimize the heat loss and make the way easier to arrive at high temperature. Measurement of S is carried out using differential method. Same thermocouples are used to measure temperature as well as voltage for S measurement. Care of temperature dependent S of thermocouple has also been taken. Simple design, small size, lightweightmake this instrument more robust. All the components for making sample holder are easily available in the market and can be replaced as per the user demand. This instrument can measure samples with various dimensions and shapes in the temperature range 300 $-$ 800 K. The instrument is validated using different class of samples, such as nickel, gadolinium, Fe $_{2}$ VAl and LaCoO $_{3}$ . Wide range of S from $\sim$ $-$ 20 to $\sim$ 600 $μ$ V/K and $κ$ from $\sim$ 1.1 to $\sim$ 23.5 W/m-K are studied. The measured values of S and k are in good agreement with the reported data.

Studying the lifetime of charge and heat carriers due to intrinsic scattering mechanisms in FeVSb half-Heusler thermoelectric

This work, presents a study of lifetime of carriers due to intrinsic scattering mechanisms $viz.$ electron-electron (EEI), electron-phonon (EPI) and phonon-phonon interactions (PPI) in a promising half-Heusler thermoelectric FeVSb. Using the full- $GW$ method, the effect of EEI and temperature on the valence and conduction band extrema and band gap are studied. The lifetime of carriers with temperature are estimated at these band extrema. At 300 K, estimated value of lifetime at VBM (CBM) is $\sim$ 1.91 x10 $^{-14}s$ ( $\sim$ 2.05 x10 $^{-14}s$ ). The estimated ground state band gap considering EEI is $\sim$ 378 meV. Next, the effect of EPI on the lifetime of electrons and phonons with temperature are discussed. The comparison of two electron lifetimes suggests that EEI should be considered in transport calculations along with EPI. The average acoustic, optical and overall phonon lifetimes due to EPI are studied with temperature. Further, the effect of PPI is studied by computing average phonon lifetime for acoustic and optical phonon branches. The lifetime of the acoustic phonons are higher compared to optical phonons which indicates acoustic phonons contribute more to lattice thermal conductivity ( $κ_{ph}$ ). The comparison of phonon lifetime due to EPI and PPI suggests that, above 500 K EPI is the dominant phonon scattering mechanism and cannot be ignored in $κ_{ph}$ calculations. Lastly, a prediction of the power factor and figure of merit of n-type and p-type FeVSb is made by considering the temperature dependent carrier lifetime for the electronic transport terms. This study shows the importance of considering EEI in electronic transport calculations and EPI in phonon transport calculations. Our study is expected to provide results to further explore the thermoelectric transport in this material.

Understanding the Seebeck coefficient of LaNiO3 compound in the temperature range 300-620 K

Transition metal oxides have been attracted much attention in thermoelectric community from the last few decades. In the present work, we have synthesized LaNiO $_{3}$ by a simple solution combustion process. To analyze the crystal structure and structural parameters we have used Rietveld refinement method wherein FullProf software is employed. The room temperature x-ray diffraction indicates the trigonal structure with space group $R \, \overline{3} \, c$ (No. 167). The refined values of lattice parameters are a = b = 5.4615 Å\, $\&$ c = 13.1777 Å. Temperature dependent Seebeck coefficient (S) of this compound has been investigated by using experimental and computational tools. The measurement of S is conducted in the temperature range $300-620$ K. The measured values of S in the entire temperature range have negative sign that indicates \textit{n}-type character of the compound. The value of S is found to be $\sim$ $-$ 8 $μ$ V/K at 300 K and at 620 K this value is $\sim$ $-$ 12 $μ$ V/K. The electronic structure calculation is carried out using DFT+\textit{U} method due to having strong correlation in LaNiO $_{3}$ . The calculation predicts the metallic ground state of the compound. Temperature dependent S is calculated using BoltzTraP package and compared with experiment. The best matching between experimental and calculated values of S is observed when self-interaction correction is employed as double counting correction in spin-polarized DFT + \textit{U} (= 1 eV) calculation. Based on the computational results maximum power factors are also calculated for \textit{p}-type and \textit{n}-type doping of this compound.

preprint2020arXiv

Exploring the possibility of enhancing the figure-of-merit ( $>$ 2) of Na $_{0.74}$ CoO $_{2}$ : A combined experimental and theoretical study

Search of new thermoelectric (TE) materials with high \textit{figure-of-merit} (ZT) is always inspired the researcher in TE field. Here, we present a combined experimental and theoretical study of TE properties of Na $_{0.74}$ CoO $_{2}$ compound in high-temperature region. The experimental Seebeck coefficient (S) is found to vary from 64 to 118 $μ$ V/K in the temperature range $300-620$ K. The positive values of S are indicating the dominating p-type behaviour of the compound. The observed value of thermal conductivity ( $κ$ ) is $\sim$ 2.2 W/m-K at 300 K. In the temperature region $300-430$ K, the value of $κ$ increases up to $\sim$ 2.6 W/m-K and then decreases slowly till 620 K with the corresponding value of $\sim$ 2.4 W/m-K. We have also carried out the theoretical calculations and the best matching between experimental and calculated values of transport properties are observed in spin-polarized calculation within DFT+\textit{U} by chosen \textit{U} = 4 eV. The maximum calculated value of ZT is found to be $\sim$ 0.67 at 1200 K for p-type conduction. Our computational study suggests that the possibility of n-type behaviour of the compound which can lead to a large value of ZT at higher temperature region. Electron doping of $\sim$ 5.1 $\times$ 10 $^{20}$ cm $^{-3}$ is expected to give rise the high ZT value of $\sim$ 2.7 at 1200 K. Using these temperature-dependent ZT values, we have calculated the maximum possible values of efficiency ( $η$ ) of thermoelectric generator (TEG) made by p and n-type Na $_{0.74}$ CoO $_{2}$ . The present study suggests that one can get the efficiency of a TE cell as high as $\sim$ 11 $\%$ when the cold and hot end temperature are fixed at 300 K and 1200 K, respectively. Such high values of ZT and efficiency suggest that Na $_{0.74}$ CoO $_{2}$ can be used as a potential candidate for high-temperature TE applications.

preprint2020arXiv

Exploring the suitable theoretical approach for understanding the electronic and magnetic properties of $α$ -Iron

We present a comparative electronic structure study using DFT and various beyond-DFT (DFT+ $U$ , $G_0W_0$ , DFT+DMFT) methods for ferromagnetic Iron (Fe) to find better approach for describing the spectral properties of correlated magnetic system. The computed value of $U$ ( $W$ ) is $\sim$ 5.4 ( $\sim$ 0.8) eV. The calculated spectra of all methods are providing good agreement with experimental spectra (ES) for peaks' positions. But, the proper line shape is only found from DFT+DMFT with correct estimation of incoherent states, which depends on $J$ and form of local Coulomb interactions. The estimation of reduced magnetization as function of reduced temperature using DFT+DMFT shows good agreement with the experimental data. The insight of paramagnetic electronic structure of Fe is also explored. This work suggests that even for simple correlated magnetic metal, we need DFT+DMFT method to reproduce the ES with great accuracy.

preprint2020arXiv

Understanding the temperature and pressure dependent electronic properties of FeSi: DFT+DMFT study

Electronic structures of FeSi and Fe $_{1.02}$ Si $_{0.98}$ under pressure (achieved through volume compression) have been investigated by using DFT+DMFT and KKR-CPA methods, respectively. The widening of band-gap with increasing pressure suggests that the experimentally observed insulator to metal transition temperature should shift towards the higher temperature for FeSi. KKR-CPA calculations have shown the presence of impurity states in the gapped region which predicts the half-metallic nature. The closure of gap (in one spin channel) with pressure increment appears to be responsible for experimentally observed semiconductor to metal transition in Fe excess samples at a temperature below 50 K. Magnetic moments at Fe excess sites are found to be decreasing with increasing pressure from 2.4 $μ_B$ per Fe atom (612 Bohr $^3$ ) to 1.2 $μ_B$ per Fe atom (507 Bohr $^3$ ). Moreover, for FeSi the calculated local spin susceptibility has shown decreasing behavior with pressure rise similar to experimental result.

preprint2019arXiv

A detailed electronic structure study of Vanadium metal by using different beyond-DFT methods

We report a detailed electronic structure calculation for Vanadium (V) using DFT, DFT+ $U$ , $G_0W_0$ , $GW_0$ and DFT+DMFT methods. The calculated values of $W$ , $U$ and $J$ by cRPA method are $\sim$ 1.1, $\sim$ 3.4 and $\sim$ 0.52 eV, respectively. The comparison between calculated spectra (CS) and experimental spectra (ES) suggests that $W$ ( $U$ ) is more accurate for DFT+ $U$ (DFT+DMFT) method. The CS, obtained by these methods, give fairly good agreement with ES for peaks' positions except $GW_0$ . The shallowness of the dips lying $\sim$ -1.5 eV and $\sim$ 1.0 eV in ES are properly explained by DFT+DMFT method only, due to the presence of incoherent $t_{2g}$ states. This work suggests that for the proper explanation of ES, sophisticated many-body theory is needed even for the simple metal.

preprint2019arXiv

Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations

In this work, we try to understand the experimental thermoelectric (TE) properties of a ZrNiSn sample with DFT and semiclassical transport calculations using SCAN functional. SCAN and mBJ provide the same band gap $E_{g}$ of $\sim$ 0.54 eV. This $E_{g}$ is found to be inadequate to explain the experimental data. The better explanation of experimental Seebeck coefficient $S$ is done by considering $E_{g}$ of 0.18 eV which suggests the non-stoichiometry and/or disorder in the sample. Further improvement in the $S$ is done by the inclusion of temperature dependence on chemical potential. In order to look for the possible enhanced TE properties obtainable in ZrNiSn with $E_{g}$ of $\sim$ 0.54 eV, power factor and optimal carrier concentrations are calculated. The optimal electron and hole concentrations required to attain highest power factors are $\sim$ 7.6x10 $^{19}$ cm $^{-3}$ and $\sim$ 1.5x10 $^{21}$ cm $^{-3}$ , respectively. The maximum figure of merit $ZT$ calculated at 1200 K for n-type and p-type ZrNiSn are $\sim$ 0.6 and $\sim$ 0.7, respectively. The % efficiency obtained for n-type ZrNiSn is $\sim$ 5.1 % while for p-type ZrNiSn is $\sim$ 6.1 %. The $ZT$ are expected to be further enhanced to $\sim$ 1.2 (n-type) and $\sim$ 1.4 (p-type) at 1200 K by doping with heavy elements for thermal conductivity reduction. The phonon properties are also studied by calculating dispersion, total and partial density of states. The calculated Debye temperature of 382 K is in good agreement with experimental value of 398 K. The thermal expansion behaviour in ZrNiSn is studied under quasi-harmonic approximation. The average linear thermal expansion coefficient $α_{ave}(T)$ of $\sim$ 7.8x10 $^{-6}$ K $^{-1}$ calculated in our work is quite close to the experimental values.

preprint2016arXiv

Investigation of the Thermoelectric Properties of ZnV $_{2}$ O $_{4}$ Compound in High Temperature Region

In the present work, we report the experimental thermopower ( $α$ ) data for ZnV $_{2}$ O $_{4}$ compound in the high temperature range 300-600 K. The value of $α$ is found to be $\sim$ 184 and $\sim$ 126 $μ$ V/K at $\sim$ 300 and $\sim$ 600 K, respectively. The temperature dependent behavior of $α$ is almost linear in the measured temperature range. To understand the large and positive $α$ value observed in this compound, we have also investigated the electronic and thermoelectric properties by combining the \textit{ab-initio} electronic structures calculations with Boltzmann transport theory. Within the local spin density approximation plus Hubbard U, the anti-ferromagnetic ground state calculation gives an energy gap $\sim$ 0.33 eV for U=3.7 eV, which is in accordance with the experimental results. The effective mass for holes in the valance band is found nearly four times that of electrons in conduction band. The large effective mass of holes are mainly responsible for the observed positive and large $α$ value in this compound. There is reasonably good matching between calculated and experimental $α$ data in the temperature range 300-410 K. The power factor calculation shows that thermoelectric properties in high temperature region can be enhanced by tuning the sample synthesis conditions and suitable doping. The estimated value of \textit{figure-of-merit}, ZT, at different absolute temperature suggest that ZnV $_{2}$ O $_{4}$ compound can be a good thermoelectric material in high temperature range.

preprint2016arXiv

The importance of temperature dependent energy gap in the understanding of high temperature thermoelectric properties

In the present work, we show the importance of temperature dependent energy band gap, E $_{g}$ (T), in understanding the high temperature thermoelectric (TE) properties of material by considering LaCoO $_{3}$ (LCO) and ZnV $_{2}$ O $_{4}$ (ZVO) compounds as a case study. For the fix value of band gap, E $_{g}$ , deviation in the values of $α$ has been observed above 360 K and 400 K for LCO and ZVO compounds, respectively. These deviation can be overcomed by consideration of temperature dependent band gap. The change in used value of E $_{g}$ with respect to temperature is $\sim$ 4 times larger than that of InAs. This large temperature dependence variation in E $_{g}$ can be attributed to decrement in the effective on-site Coulomb interaction due to lattice expansion. At 600 K, the value of \textit{ZT} for \textit{n} and \textit{p-doped}, LCO is $\sim$ 0.35 which suggest that it can be a used as a potential material for TE device. This work clearly suggest that one should consider the temperature dependent band gap in predicting the high temperature TE properties of insulating materials.

{Effect of on-site Coulomb interaction (\textit{U}) on the electronic and magnetic properties of Fe $_{2}$ MnSi, Fe $_{2}$ MnAl and Co $_{2}$ MnGe

The electronic band structures, density of states plots and magnetic moments of Fe $_{2 }$ MnSi, Fe $_{2 }$ MnAl, and Co $_{2 }$ MnGe are studied by using the first principles calculations. The FM solutions using LSDA without \textit{U} show the presence of half-metallic ferromagnetic (HFM) ground state in Fe $_{2 }$ MnSi, whereas the ground state of Fe $_{2 }$ MnAl is found to be metallic. In both compounds the maximum contribution to the total magnetic moment is from the Mn atom, while the Fe atom contributes very less. The electronic structures and magnetic moments of Fe-based compounds affected significantly by \textit{U}, whereas its effect is very less on Co $_{2}$ MnGe. The magnetic moment of Fe atom in Fe $_{2 }$ MnSi (Fe $_{2 }$ MnAl), increased by $\sim$ 70 % ( $\sim$ 75 %) and in Mn atom it decreases by $\sim$ 50 % ( $\sim$ 70 %) when the value of \textit{U} is increased from 1 to 5 eV. The Hund's like exchange interactions are increasing in Fe atom while decreasing in Mn atom with increase in \textit{U}. The Fe and Mn moments are ferromagnetically coupled in Fe $_{2 }$ MnSi for all values of \textit{U}, whereas in Fe $_{2 }$ MnAl they coupled antiferromagnetically below \textit{U} = 2 eV and ferromagnetically above it. Above \textit{U} = 2 eV the metallic ground state of Fe $_{2 }$ MnAl changes to semiconducting ground state and the ferromagnetic coupling between Fe and Mn atoms appears to be responsible for this.

Importance of two current model in understanding the electronic transport behavior of inverse Heusler alloy: Fe 2 CoSi

Here we explore the applicability of the two current model in understanding the transport behavior of Fe 2 CoSi compound by using the first principles calculations in combination with the Boltzmann transport theory. The spin-unpolarized calculation shows large density of states (DOS) at Fermi level (E F) and is unable to provide the correct temperature dependence of transport coefficients. The spin-polarised calculation shows reduced DOS at the E F in the spin-up channel, whereas spin-dn channel have almost zero DOS at the E F . The absolute value of Seebeck coefficient in the spin-up channel shows linear increment with the temperature and in the spin-dn channel it varies non-linearly. The electrical conductivity also shows non-linear temperature dependence in both the spin channels whereas, the electronic thermal conductivity shows linear temperature dependence. The values of transport coefficients and their temperature dependence obtained by using the two current model are found to be in fairly good agreement with the experimental data. Present work clearly suggests the importance of two current model in understanding the transport properties of the compound.

Investigation of the electronic and thermoelectric properties of Fe2 ScX (X = P, As and Sb) full Heusler alloys by using first principles calculations

By using ab initio electronic structure calculations here we report the three new full Heusler alloys which are possessing very good thermoelectric behavior and expected to be synthesized in the laboratories. These are Fe2 ScP, Fe2 ScAs and Fe2 ScSb compound. First two compounds are indirect band gap semiconductors and the last one shows semimetallic ground state. The value of band gap of Fe2 ScP and Fe2 ScAs is 0.3 and 0.09 eV, respectively. These compounds show the presence of flat conduction bands along Γ - X-direction suggesting for the large electron like effective mass and promising for very good thermoelectric behavior of the compounds. At 200 K, the Seebeck coefficients of Fe2 ScP, Fe2 ScAs and Fe2 ScSb compounds are -770, -386 and -192μV/K, respectively. The maximum power factor (P F ) is expected for the n-type doping in these materials. The heavily doped Fe2 ScP and Fe2 ScAs have P F >60 for a wide temperature range, which is comparable to the PF of Bi2 Te3 - a well known and one of the best commercially used thermoelectric material. Present work suggests the possible thermoelectric applicability of these materials in a wide temperature range.