Researcher profile

Simon Zihlmann

Simon Zihlmann contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Magnetic field resilient high kinetic inductance superconducting niobium nitride coplanar waveguide resonators

We characterize niobium nitride (NbN) $λ/2$ coplanar waveguide resonators, which were fabricated from a 10nm thick film on silicon dioxide grown by sputter deposition. For films grown at 120°C we report a superconducting critical temperature of 7.4K associated with a normal square resistance of 1k$Ω$ leading to a kinetic inductance of 192pH/$\Box$. We fabricated resonators with a characteristic impedance up to 4.1k$Ω$ and internal quality factors $Q_\mathrm{i} > 10^4$ in the single photon regime at zero magnetic field. Moreover, in the many photons regime, the resonators present high magnetic field resilience with $Q_\mathrm{i} > 10^4$ in a 6T in-plane magnetic field as well as in a 300mT out-of-plane magnetic field. These findings make such resonators a compelling choice for cQED experiments involving quantum systems with small electric dipole moments operated in finite magnetic fields.

preprint2019arXiv

Mobility enhancement in graphene by in situ reduction of random strain fluctuations

Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present transport measurements in hBN-encapsulated devices where such strain fluctuations can be in situ reduced by increasing the average uniaxial strain. When $\sim0.2\%$ of uniaxial strain is applied to the graphene, an enhancement of the carrier mobility by $\sim35\%$ is observed while the residual doping reduces by $\sim39\%$. We demonstrate a strong correlation between the mobility and the residual doping, from which we conclude that random local strain fluctuations are the dominant source of disorder limiting the mobility in these devices. Our findings are also supported by Raman spectroscopy measurements.