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Andreas Baumgartner

Andreas Baumgartner appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.supr-conquant-ph

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Published work

8 published item(s)

preprint2020arXiv

Large spatial extension of the zero-energy Yu-Shiba-Rusinov state in magnetic field

Various promising qubit concepts have been put forward recently based on engineered superconductor (SC) subgap states like Andreev bound states, Majorana zero modes or the Yu-Shiba-Rusinov (Shiba) states. The coupling of these subgap states via a SC strongly depends on their spatial extension and is an essential next step for future quantum technologies. Here we investigate the spatial extension of a Shiba state in a semiconductor quantum dot coupled to a SC for the first time. With detailed transport measurements and numerical renormalization group calculations we find a remarkable more than 50 nm extension of the zero energy Shiba state, much larger than the one observed in very recent scanning tunneling microscopy (STM) measurements. Moreover, we demonstrate that its spatial extension increases substantially in magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

A Double Quantum Dot Spin Valve

A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor quantum dots (QDs), individually spin-polarized by ferromagnetic split-gates (FSGs). As a proof of principle, we fabricated a double QD spin valve consisting of two weakly coupled semiconducting QDs in an InAs nanowire (NW), each with independent FSGs that can be magnetized in parallel or anti-parallel. In tunneling magnetoresistance (TMR) experiments at zero external magnetic field, we find a strongly reduced spin valve conductance for the two anti-parallel configurations, with a single QD polarization of $\sim 27\%$. The TMR can be significantly improved by a small external field and optimized gate voltages, which results in a continuously electrically tunable TMR between $+80\%$ and $-90\%$. A simple model quantitatively reproduces all our findings, suggesting a gate tunable QD polarization of $\pm 80\%$. Such versatile spin-polarized QDs are suitable for various applications, for example in spin projection and correlation experiments in a large variety of nanoelectronics experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to extract valuable quantitative information of the QD. The QD shows very regular Coulomb blockade (CB) resonances over a large gate voltage range. By analyzing the resonance line shapes, we map the evolution of the tunnel couplings from the few to the many electron regime, with electrically tunable tunnel couplings from <1 $μ$eV to >600 $μ$eV, and a transition from the temperature to the lifetime broadened regime. The InP segments form tunnel barriers with almost fully symmetric tunnel couplings and a barrier height of ~350 meV. All of these findings can be understood in great detail based on the deterministic material composition and geometry. Our results demonstrate that integrated InAs/InP QDs provide a promising platform for electron tunneling spectroscopy in InAs nanowires, which can readily be contacted by a variety of superconducting materials to investigate subgap states in proximitized NW regions, or be used to characterize thermoelectric nanoscale devices in the quantum regime.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Mobility enhancement in graphene by in situ reduction of random strain fluctuations

Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present transport measurements in hBN-encapsulated devices where such strain fluctuations can be in situ reduced by increasing the average uniaxial strain. When $\sim0.2\%$ of uniaxial strain is applied to the graphene, an enhancement of the carrier mobility by $\sim35\%$ is observed while the residual doping reduces by $\sim39\%$. We demonstrate a strong correlation between the mobility and the residual doping, from which we conclude that random local strain fluctuations are the dominant source of disorder limiting the mobility in these devices. Our findings are also supported by Raman spectroscopy measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Tracing the $s_\pm$-symmetry in iron pnictides by controlled disorder

Consecutive proton irradiation of iron pnictides reduces the superconducting transition temperature to decrease monotonically. Our systematic optical THz investigations of Ba(Fe$_{0.9}$Co$_{0.1}$)$_2$As$_2$ thin films reveal, however, that the low-energy superconducting gap is first suppressed, but recovers for higher irradiation doses. At the same time the decrease of the superfluid density with disorder comes to a halt. These observations are in excellent agreement with theoretical calculations, which predict a disorder-induced transition of the order parameter from $s_{\pm}$ to $s_{++}$ symmetry. Thereby we solve the longstanding puzzle of the iron pnictides gap symmetry in favor of $s_{\pm}$-symmetry and demonstrate THz spectroscopy as a tool to determine the symmetry of the superconducting order parameter.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Entanglement witnessing and quantum cryptography with non-ideal ferromagnetic detectors

We investigate theoretically the use of non-ideal ferromagnetic contacts as a mean to detect quantum entanglement of electron spins in transport experiments. We use a designated entanglement witness and find a minimal spin polarization of $η> 1/\sqrt{3} \approx 58 %$ required to demonstrate spin entanglement. This is significantly less stringent than the ubiquitous tests of Bell's inequality with $η> 1/\sqrt[4]{2}\approx 84%$. In addition, we discuss the impact of decoherence and noise on entanglement detection and apply the presented framework to a simple quantum cryptography protocol. Our results are directly applicable to a large variety of experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

$g$-factor anisotropy in nanowire-based InAs quantum dots

The determination and control of the electron $g$-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the $g$-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the $g$-factor from the splitting of Kondo resonances and find that it varies continuously in the range between $|g^*| = 5$ and 15.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Non-local spectroscopy of Andreev bound states

We experimentally investigate Andreev bound states (ABSs) in a carbon nanotube quantum dot (QD) connected to a superconducting Nb lead (S). A weakly coupled normal metal contact acts as a tunnel probe that measures the energy dispersion of the ABSs. Moreover we study the response of the ABS to non-local transport processes, namely Cooper pair splitting and elastic co-tunnelling, that are enabled by a second QD fabricated on the same nanotube on the opposite side of S. We find an appreciable non-local conductance with a rich structure, including a sign reversal at the ground state transition from the ABS singlet to a degenerate magnetic doublet. We describe our device by a simple rate equation model that captures the key features of our observations and demonstrates that the sign of the non-local conductance is a measure for the charge distribution of the ABS, given by the respective Bogoliubov-de Gennes amplitudes $u$ and $v$.

0 citations0 reviewsNo code linkedOpen access