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Christian Schönenberger

Christian Schönenberger appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.supr-concond-mat.mtrl-sciphysics.ins-detquant-phphysics.app-ph

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Published work

26 published item(s)

preprint2022arXiv

Transparent Josephson Junctions in Higher-Order Topological Insulator WTe2 via Pd Diffusion

Highly transparent superconducting contacts to a topological insulator (TI) remain a persistent challenge on the route to engineer topological superconductivity. Recently, the higher-order TI WTe$_2$ was shown to turn superconducting when placed on palladium (Pd) bottom contacts, demonstrating a promising material system in pursuing this goal. Here, we report the diffusion of Pd into WTe$_2$ and the formation of superconducting PdTe$_x$ as the origin of observed superconductivity. We find an atomically sharp interface in vertical direction to the van der Waals layers between the diffusion crystal and its host crystal, forming state-of-the-art superconducting contacts to a TI. The diffusion is discovered to be non-uniform along the width of the WTe$_2$ crystal, with a greater extend along the edges compared to the bulk. The potential of this contacting method is highlighted in transport measurements on Josephson junctions by employing external superconducting leads.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

From Cooper pair splitting to the non-local spectroscopy of a Shiba state

Cooper pair splitting (CPS) is a way to create spatially separated, entangled electron pairs. To this day, CPS is often identified in experiments as a spatial current correlation. However, such correlations can arise even in the absence of CPS, when a quantum dot is strongly coupled to the superconductor, and a subgap Shiba state is formed. Here, we present a detailed experimental characterization of those spatial current correlations, as the tunnel barrier strength between the quantum dot and the neighboring normal electrode is tuned. The correlation of the non-local signal and the barrier strength reveals a competition between CPS and the non-local probing of the Shiba state. We describe our experiment with a simple transport model, and obtain the tunnel couplings of our device by fitting the model's prediction to the measured conductance correlation curve. Furthermore, we use our theory to extract the contribution of CPS to the non-local signal.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Phase-dependent microwave response of a graphene Josephson junction

Gate-tunable Josephson junctions embedded in a microwave environment provide a promising platform to in-situ engineer and optimize novel superconducting quantum circuits. The key quantity for the circuit design is the phase-dependent complex admittance of the junction, which can be probed by sensing an rf SQUID with a tank circuit. Here, we investigate a graphene-based Josephson junction as a prototype gate-tunable element enclosed in a SQUID loop that is inductively coupled to a superconducting resonator operating at 3 GHz. With a concise circuit model that describes the dispersive and dissipative response of the coupled system, we extract the phase-dependent junction admittance corrected for self-screening of the SQUID loop. We decompose the admittance into the current-phase relation and the phase-dependent loss and as these quantities are dictated by the spectrum and population dynamics of the supercurrent-carrying Andreev bound states, we gain insight to the underlying microscopic transport mechanisms in the junction. We theoretically reproduce the experimental results by considering a short, diffusive junction model that takes into account the interaction between the Andreev spectrum and the electromagnetic environment, from which we deduce a lifetime of ~17 ps for non-equilibrium populations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Experimental demonstration of the suppression of optical phonon splitting in 2D materials by Raman spectroscopy

Raman spectroscopy is one of the most extended experimental techniques to investigate thin-layered 2D materials. For a complete understanding and modeling of the Raman spectrum of a novel 2D material, it is often necessary to combine the experimental investigation to density-functional-theory calculations. We provide the experimental proof of the fundamentally different behavior of polar 2D vs 3D systems regarding the effect of the dipole-dipole interactions, which in 2D systems ultimately lead to the absence of optical phonons splitting, otherwise present in 3D materials. We demonstrate that non-analytical corrections (NACs) should not be applied to properly model the Raman spectra of few-layered 2D materials, such as WSe$_{2}$ and h-BN, corroborating recent theoretical predictions [Nano Lett. 2017, 17 (6), 3758-3763]. Our findings are supported by measurements performed on tilted samples that allow increasing the component of photon momenta in the plane of the flake, thus unambiguously setting the direction of an eventual NAC. We also investigate the influence of the parity of the number of layers and of the type of layer-by-layer stacking on the effect of NACs on the Raman spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large spatial extension of the zero-energy Yu-Shiba-Rusinov state in magnetic field

Various promising qubit concepts have been put forward recently based on engineered superconductor (SC) subgap states like Andreev bound states, Majorana zero modes or the Yu-Shiba-Rusinov (Shiba) states. The coupling of these subgap states via a SC strongly depends on their spatial extension and is an essential next step for future quantum technologies. Here we investigate the spatial extension of a Shiba state in a semiconductor quantum dot coupled to a SC for the first time. With detailed transport measurements and numerical renormalization group calculations we find a remarkable more than 50 nm extension of the zero energy Shiba state, much larger than the one observed in very recent scanning tunneling microscopy (STM) measurements. Moreover, we demonstrate that its spatial extension increases substantially in magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

One-Dimensional Edge Transport in Few-Layer WTe$_2$

WTe$_2$ is a layered transitional-metal dichalcogenide (TMD) with a number of intriguing topological properties. Recently, WTe$_2$ has been predicted to be a higher-order topological insulator (HOTI) with topologically protected hinge states along the edges. The gapless nature of WTe$_2$ complicates the observation of one-dimensional (1D) topological states in transport due to their small contribution relative to the bulk. Here, we study the behavior of the Josephson effect in magnetic field to distinguish edge from bulk transport. The Josephson effect in few-layer WTe$_2$ reveals 1D states residing on the edges and steps. Moreover, our data demonstrates a combination of Josephson transport properties observed solely in another HOTI - bismuth, including Josephson transport over micrometer distances, extreme robustness in a magnetic field, and nonsinusoidal current-phase relation (CPR). Our observations strongly suggest the topological origin of the 1D states and that few-layer WTe$_2$ is a HOTI.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Reducing the hydrogen content in liquid helium

Helium has the lowest boiling point of any element in nature at normal atmospheric pressure. Therefore, any unwanted substance like impurities present in liquid helium will be frozen and will be in solid form. Even if these solid impurities can be easily eliminated by filtering, liquid helium may contain a non-negligible quantity of molecular hydrogen. These traces of molecular hydrogen are the causes of a known problem worldwide: the blocking of fine-capillary tubes used as flow impedances in helium evaporation cryostats to achieve temperatures below 4,2K. This problem seriously affects a wide range of cryogenic equipment used in low-temperature physics research and leads to a dramatic loss of time and costs due to the high price of helium. Here, we present first the measurement of molecular hydrogen content in helium gas. Three measures to decrease this molecular hydrogen are afterward proposed; (i) improving the helium quality, (ii) release of helium gas in the atmosphere during purge time for the regeneration cycle of the helium liquefier's internal purifier, and (iii) installation of two catalytic converters in a closed helium circuit. These actions have eliminated our low-temperature impedance blockage occurrences now for more than two years.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

A Double Quantum Dot Spin Valve

A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor quantum dots (QDs), individually spin-polarized by ferromagnetic split-gates (FSGs). As a proof of principle, we fabricated a double QD spin valve consisting of two weakly coupled semiconducting QDs in an InAs nanowire (NW), each with independent FSGs that can be magnetized in parallel or anti-parallel. In tunneling magnetoresistance (TMR) experiments at zero external magnetic field, we find a strongly reduced spin valve conductance for the two anti-parallel configurations, with a single QD polarization of $\sim 27\%$. The TMR can be significantly improved by a small external field and optimized gate voltages, which results in a continuously electrically tunable TMR between $+80\%$ and $-90\%$. A simple model quantitatively reproduces all our findings, suggesting a gate tunable QD polarization of $\pm 80\%$. Such versatile spin-polarized QDs are suitable for various applications, for example in spin projection and correlation experiments in a large variety of nanoelectronics experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Controllable p$-$n junctions in three$-$dimensional Dirac semimetal Cd$_3$As$_2$ nanowires

We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, where p$-$n junctions are formed. The conductance in the p$-$n junction regime decreases drastically when a magnetic field is applied perpendicular to the nanowire, which is due to the suppression of Klein tunneling. In this regime, the device shows quantum dot behavior. On the other hand, clear conductance plateaus are observed in the n$-$n regime likely owing to the cyclotron motion of carriers at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to extract valuable quantitative information of the QD. The QD shows very regular Coulomb blockade (CB) resonances over a large gate voltage range. By analyzing the resonance line shapes, we map the evolution of the tunnel couplings from the few to the many electron regime, with electrically tunable tunnel couplings from <1 $μ$eV to >600 $μ$eV, and a transition from the temperature to the lifetime broadened regime. The InP segments form tunnel barriers with almost fully symmetric tunnel couplings and a barrier height of ~350 meV. All of these findings can be understood in great detail based on the deterministic material composition and geometry. Our results demonstrate that integrated InAs/InP QDs provide a promising platform for electron tunneling spectroscopy in InAs nanowires, which can readily be contacted by a variety of superconducting materials to investigate subgap states in proximitized NW regions, or be used to characterize thermoelectric nanoscale devices in the quantum regime.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Intrinsically-limited timing jitter in molybdenum silicide superconducting nanowire single-photon detectors

Recent progress in the development of superconducting nanowire single-photon detectors (SNSPDs) has delivered excellent performances, and has had a great impact on a range of research fields. The timing jitter, which denotes the temporal resolution of the detection, is a crucial parameter for many applications. Despite extensive work since their apparition, the lowest jitter achievable with SNSPDs is still not clear, and the origin of the intrinsic limits is not fully understood. Understanding its intrinsic behaviour and limits is a mandatory step toward improvements. Here, we report our experimental study on the intrinsically-limited timing jitter in molybdenum silicide (MoSi) SNSPDs. We show that to reach intrinsic jitter, several detector properties such as the latching current and the kinetic inductance of the devices have to be understood. The dependence on the nanowire cross-section and the energy dependence of the intrinsic jitter are exhibited, and the origin of the limits are explicited. System timing jitter of 6.0 ps at 532 nm and 10.6 ps at 1550 nm photon wavelength have been obtained.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Mobility enhancement in graphene by in situ reduction of random strain fluctuations

Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present transport measurements in hBN-encapsulated devices where such strain fluctuations can be in situ reduced by increasing the average uniaxial strain. When $\sim0.2\%$ of uniaxial strain is applied to the graphene, an enhancement of the carrier mobility by $\sim35\%$ is observed while the residual doping reduces by $\sim39\%$. We demonstrate a strong correlation between the mobility and the residual doping, from which we conclude that random local strain fluctuations are the dominant source of disorder limiting the mobility in these devices. Our findings are also supported by Raman spectroscopy measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Role of hexagonal boron nitride in protecting ferromagnetic nanostructures from oxidation

Ferromagnetic contacts are widely used to inject spin polarized currents into non-magnetic materials such as semiconductors or 2-dimensional materials like graphene. In these systems, oxidation of the ferromagnetic materials poses an intrinsic limitation on device performance. Here we investigate the role of ex-situ transferred chemical vapour deposited hexagonal boron nitride (hBN) as an oxidation barrier for nanostructured cobalt and permalloy electrodes. The chemical state of the ferromagnets was investigated using X-ray photoemission electron microscopy owing to its high sensitivity and lateral resolution. We have compared the oxide thickness formed on ferromagnetic nanostructures covered by hBN to uncovered reference structures. Our results show that hBN reduces the oxidation rate of ferromagnetic nanostructures suggesting that it could be used as an ultra-thin protection layer in future spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Guiding of Electrons in a Few Mode Ballistic Graphene Channel

In graphene, the extremely fast charge carriers can be controlled by electron-optical elements, such as waveguides, in which the transmissivity is tuned by the wavelength. In this work, charge carriers are guided in a suspended ballistic few-mode graphene channel, defined by electrostatic gating. By depleting the channel, a reduction of mode number and steps in the conductance are observed, until the channel is completely emptied. The measurements are supported by tight-binding transport calculations including the full electrostatics of the sample.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Scalable Tight-Binding Model for Graphene

Artificial graphene consisting of honeycomb lattices other than the atomic layer of carbon has been shown to exhibit electronic properties similar to real graphene. Here, we reverse the argument to show that transport properties of real graphene can be captured by simulations using "theoretical artificial graphene." To prove this, we first derive a simple condition, along with its restrictions, to achieve band structure invariance for a scalable graphene lattice. We then present transport measurements for an ultraclean suspended single-layer graphene pn junction device, where ballistic transport features from complex Fabry-Pérot interference (at zero magnetic field) to the quantum Hall effect (at unusually low field) are observed and are well reproduced by transport simulations based on properly scaled single-particle tight-binding models. Our findings indicate that transport simulations for graphene can be efficiently performed with a strongly reduced number of atomic sites, allowing for reliable predictions for electric properties of complex graphene devices. We demonstrate the capability of the model by applying it to predict so-far unexplored gate-defined conductance quantization in single-layer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Snake Trajectories in Ultraclean Graphene p-n Junctions

Snake states are trajectories of charge carriers curving back and forth along an interface. There are two types of snake states, formed by either inverting the magnetic field direction or the charge carrier type at an interface. Whereas the former has been demonstrated in GaAs-AlGaAs heterostructures, the latter has become conceivable only with the advance of ballistic graphene where a gapless p-n interface governed by Klein tunneling can be formed. Such snake states were hidden in previous experiments due to limited sample quality. Here we report on magneto-conductance oscillations due to snake states in a ballistic suspended graphene p-n-junction which occur already at a very small magnetic field of 20mT. The visibility of 30% is enabled by Klein collimation. Our finding is firmly supported by quantum transport simulations. We demonstrate the high tunability of the device and operate it in different magnetic field regimes

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Entanglement witnessing and quantum cryptography with non-ideal ferromagnetic detectors

We investigate theoretically the use of non-ideal ferromagnetic contacts as a mean to detect quantum entanglement of electron spins in transport experiments. We use a designated entanglement witness and find a minimal spin polarization of $η> 1/\sqrt{3} \approx 58 %$ required to demonstrate spin entanglement. This is significantly less stringent than the ubiquitous tests of Bell's inequality with $η> 1/\sqrt[4]{2}\approx 84%$. In addition, we discuss the impact of decoherence and noise on entanglement detection and apply the presented framework to a simple quantum cryptography protocol. Our results are directly applicable to a large variety of experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Large-scale BN tunnel barriers for graphene spintronics

We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by h-BN, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of 260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

$g$-factor anisotropy in nanowire-based InAs quantum dots

The determination and control of the electron $g$-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the $g$-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the $g$-factor from the splitting of Kondo resonances and find that it varies continuously in the range between $|g^*| = 5$ and 15.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ballistic interferences in suspended graphene

Graphene is a 2-dimensional (2D) carbon allotrope with the atoms arranged in a honeycomb lattice. The low-energy electronic excitations in this 2D crystal are described by massless Dirac fermions that have a linear dispersion relation similar to photons. Taking advantage of this optics-like electron dynamics, generic optical elements like lenses, beam splitters and wave guides have been proposed for electrons in engineered ballistic graphene. Tuning of these elements relies on the ability to adjust the carrier concentration in defined areas, including the possibility to create bipolar regions of opposite charge (p-n regions). However, the combination of ballistic transport and complex electrostatic gating remains challenging. Here, we report on the fabrication and characterization of fully suspended graphene p-n junctions. By local electro-static gating, resonant cavities can be defined, leading to complex Fabry-Perot interference patterns in the unipolar and the bipolar regime. The amplitude of the observed conductance oscillations accounts for quantum interference of electrons that propagate ballistically over long distances exceeding 1 micron. We also demonstrate that the visibility of the interference pattern is enhanced by Klein collimation at the p-n interface. This finding paves the way to more complex gate-controlled ballistic graphene devices and brings electron optics in graphene closer to reality.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Non-local spectroscopy of Andreev bound states

We experimentally investigate Andreev bound states (ABSs) in a carbon nanotube quantum dot (QD) connected to a superconducting Nb lead (S). A weakly coupled normal metal contact acts as a tunnel probe that measures the energy dispersion of the ABSs. Moreover we study the response of the ABS to non-local transport processes, namely Cooper pair splitting and elastic co-tunnelling, that are enabled by a second QD fabricated on the same nanotube on the opposite side of S. We find an appreciable non-local conductance with a rich structure, including a sign reversal at the ground state transition from the ABS singlet to a degenerate magnetic doublet. We describe our device by a simple rate equation model that captures the key features of our observations and demonstrates that the sign of the non-local conductance is a measure for the charge distribution of the ABS, given by the respective Bogoliubov-de Gennes amplitudes $u$ and $v$.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Quantum Hall effect in graphene with superconducting electrodes

We have realized an integer quantum Hall system with superconducting contacts by connecting graphene to niobium electrodes. Below their upper critical field of 4 tesla, an integer quantum Hall effect coexists with superconductivity in the leads, but with a plateau conductance that is larger than in the normal state. We ascribe this enhanced quantum Hall plateau conductance to Andreev processes at the graphene-superconductor interface leading to the formation of so-called Andreev edge-states. The enhancement depends strongly on the filling-factor, and is less pronounced on the first plateau, due to the special nature of the zero energy Landau level in monolayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin Symmetry of the Bilayer Graphene Groundstate

We show nonlinear transport experiments on clean, suspended bilayer graphene that reveal a gap in the density of states. Looking at the evolution of the gap in magnetic fields of different orientation, we find that the groundstate is a spin-ordered phase. Of the three possible gapped groundstates that are predicted by theory for equal charge distribution between the layers, we can therefore exclude the quantum anomalous Hall phase, leaving the layer antiferromagnet and the quantum spin Hall phase as the only possible gapped groundstates for bilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Homogeneity of Bilayer Graphene

We present non-linear transport measurements on suspended, current annealed bilayer graphene devices. Using a multi-terminal geometry we demonstrate that devices tend to be inhomogeneous and host two different electronic phases next to each other. Both of these phases show gap-like features of different magnitude in non-linear transport at low charge carrier densities, as already observed in previous studies. Here, we investigate the magnetic field dependence and find that both features grow with increasing field, the smaller one with 0.6 meV/T, the larger one with a 5-10 times higher field dependence. We attribute the larger of the two gaps to an interaction induced broken symmetry state and the smaller one to localization in the more disordered parts of the device.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Graphene transistors are insensitive to pH changes in solution

We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs. The low gate-shift of a GFET can be further reduced if the graphene surface is covered with a hydrophobic fluorobenzene layer. If a thin Al-oxide layer is applied instead, the opposite happens. This suggests that clean graphene does not sense the chemical potential of protons. A GFET can therefore be used as a reference electrode in an aqueous electrolyte. Our finding sheds light on the large variety of pH-induced gate shifts that have been published for GFETs in the recent literature.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Electric Field Control of Spin Transport

Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are separated by a thin tunneling barrier. In such devices, R depends on the orientation of the magnetisation of the electrodes. It is usually larger in the antiparallel than in the parallel configuration. The relative difference of R, the so-called magneto-resistance (MR), is then positive. Common devices, such as the giant magneto-resistance sensor used in reading heads of hard disks, are based on this phenomenon. The MR may become anomalous (negative), if the transmission probability of electrons through the device is spin or energy dependent. This offers a route to the realisation of gate-tunable MR devices, because transmission probabilities can readily be tuned in many devices with an electrical gate signal. Such devices have, however, been elusive so far. We report here on a pronounced gate-field controlled MR in devices made from carbon nanotubes with ferromagnetic contacts. Both the amplitude and the sign of the MR are tunable with the gate voltage in a predictable manner. We emphasise that this spin-field effect is not restricted to carbon nanotubes but constitutes a generic effect which can in principle be exploited in all resonant tunneling devices.

0 citations0 reviewsNo code linkedOpen access