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Researcher profile

Christian Schönenberger

Christian Schönenberger contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.supr-conphysics.ins-detcond-mat.mtrl-sciphysics.app-phquant-ph

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Published work

12 published item(s)

preprint2022arXiv

Transparent Josephson Junctions in Higher-Order Topological Insulator WTe2 via Pd Diffusion

Highly transparent superconducting contacts to a topological insulator (TI) remain a persistent challenge on the route to engineer topological superconductivity. Recently, the higher-order TI WTe$_2$ was shown to turn superconducting when placed on palladium (Pd) bottom contacts, demonstrating a promising material system in pursuing this goal. Here, we report the diffusion of Pd into WTe$_2$ and the formation of superconducting PdTe$_x$ as the origin of observed superconductivity. We find an atomically sharp interface in vertical direction to the van der Waals layers between the diffusion crystal and its host crystal, forming state-of-the-art superconducting contacts to a TI. The diffusion is discovered to be non-uniform along the width of the WTe$_2$ crystal, with a greater extend along the edges compared to the bulk. The potential of this contacting method is highlighted in transport measurements on Josephson junctions by employing external superconducting leads.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

From Cooper pair splitting to the non-local spectroscopy of a Shiba state

Cooper pair splitting (CPS) is a way to create spatially separated, entangled electron pairs. To this day, CPS is often identified in experiments as a spatial current correlation. However, such correlations can arise even in the absence of CPS, when a quantum dot is strongly coupled to the superconductor, and a subgap Shiba state is formed. Here, we present a detailed experimental characterization of those spatial current correlations, as the tunnel barrier strength between the quantum dot and the neighboring normal electrode is tuned. The correlation of the non-local signal and the barrier strength reveals a competition between CPS and the non-local probing of the Shiba state. We describe our experiment with a simple transport model, and obtain the tunnel couplings of our device by fitting the model's prediction to the measured conductance correlation curve. Furthermore, we use our theory to extract the contribution of CPS to the non-local signal.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Phase-dependent microwave response of a graphene Josephson junction

Gate-tunable Josephson junctions embedded in a microwave environment provide a promising platform to in-situ engineer and optimize novel superconducting quantum circuits. The key quantity for the circuit design is the phase-dependent complex admittance of the junction, which can be probed by sensing an rf SQUID with a tank circuit. Here, we investigate a graphene-based Josephson junction as a prototype gate-tunable element enclosed in a SQUID loop that is inductively coupled to a superconducting resonator operating at 3 GHz. With a concise circuit model that describes the dispersive and dissipative response of the coupled system, we extract the phase-dependent junction admittance corrected for self-screening of the SQUID loop. We decompose the admittance into the current-phase relation and the phase-dependent loss and as these quantities are dictated by the spectrum and population dynamics of the supercurrent-carrying Andreev bound states, we gain insight to the underlying microscopic transport mechanisms in the junction. We theoretically reproduce the experimental results by considering a short, diffusive junction model that takes into account the interaction between the Andreev spectrum and the electromagnetic environment, from which we deduce a lifetime of ~17 ps for non-equilibrium populations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Experimental demonstration of the suppression of optical phonon splitting in 2D materials by Raman spectroscopy

Raman spectroscopy is one of the most extended experimental techniques to investigate thin-layered 2D materials. For a complete understanding and modeling of the Raman spectrum of a novel 2D material, it is often necessary to combine the experimental investigation to density-functional-theory calculations. We provide the experimental proof of the fundamentally different behavior of polar 2D vs 3D systems regarding the effect of the dipole-dipole interactions, which in 2D systems ultimately lead to the absence of optical phonons splitting, otherwise present in 3D materials. We demonstrate that non-analytical corrections (NACs) should not be applied to properly model the Raman spectra of few-layered 2D materials, such as WSe$_{2}$ and h-BN, corroborating recent theoretical predictions [Nano Lett. 2017, 17 (6), 3758-3763]. Our findings are supported by measurements performed on tilted samples that allow increasing the component of photon momenta in the plane of the flake, thus unambiguously setting the direction of an eventual NAC. We also investigate the influence of the parity of the number of layers and of the type of layer-by-layer stacking on the effect of NACs on the Raman spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large spatial extension of the zero-energy Yu-Shiba-Rusinov state in magnetic field

Various promising qubit concepts have been put forward recently based on engineered superconductor (SC) subgap states like Andreev bound states, Majorana zero modes or the Yu-Shiba-Rusinov (Shiba) states. The coupling of these subgap states via a SC strongly depends on their spatial extension and is an essential next step for future quantum technologies. Here we investigate the spatial extension of a Shiba state in a semiconductor quantum dot coupled to a SC for the first time. With detailed transport measurements and numerical renormalization group calculations we find a remarkable more than 50 nm extension of the zero energy Shiba state, much larger than the one observed in very recent scanning tunneling microscopy (STM) measurements. Moreover, we demonstrate that its spatial extension increases substantially in magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

One-Dimensional Edge Transport in Few-Layer WTe$_2$

WTe$_2$ is a layered transitional-metal dichalcogenide (TMD) with a number of intriguing topological properties. Recently, WTe$_2$ has been predicted to be a higher-order topological insulator (HOTI) with topologically protected hinge states along the edges. The gapless nature of WTe$_2$ complicates the observation of one-dimensional (1D) topological states in transport due to their small contribution relative to the bulk. Here, we study the behavior of the Josephson effect in magnetic field to distinguish edge from bulk transport. The Josephson effect in few-layer WTe$_2$ reveals 1D states residing on the edges and steps. Moreover, our data demonstrates a combination of Josephson transport properties observed solely in another HOTI - bismuth, including Josephson transport over micrometer distances, extreme robustness in a magnetic field, and nonsinusoidal current-phase relation (CPR). Our observations strongly suggest the topological origin of the 1D states and that few-layer WTe$_2$ is a HOTI.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Reducing the hydrogen content in liquid helium

Helium has the lowest boiling point of any element in nature at normal atmospheric pressure. Therefore, any unwanted substance like impurities present in liquid helium will be frozen and will be in solid form. Even if these solid impurities can be easily eliminated by filtering, liquid helium may contain a non-negligible quantity of molecular hydrogen. These traces of molecular hydrogen are the causes of a known problem worldwide: the blocking of fine-capillary tubes used as flow impedances in helium evaporation cryostats to achieve temperatures below 4,2K. This problem seriously affects a wide range of cryogenic equipment used in low-temperature physics research and leads to a dramatic loss of time and costs due to the high price of helium. Here, we present first the measurement of molecular hydrogen content in helium gas. Three measures to decrease this molecular hydrogen are afterward proposed; (i) improving the helium quality, (ii) release of helium gas in the atmosphere during purge time for the regeneration cycle of the helium liquefier's internal purifier, and (iii) installation of two catalytic converters in a closed helium circuit. These actions have eliminated our low-temperature impedance blockage occurrences now for more than two years.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

A Double Quantum Dot Spin Valve

A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor quantum dots (QDs), individually spin-polarized by ferromagnetic split-gates (FSGs). As a proof of principle, we fabricated a double QD spin valve consisting of two weakly coupled semiconducting QDs in an InAs nanowire (NW), each with independent FSGs that can be magnetized in parallel or anti-parallel. In tunneling magnetoresistance (TMR) experiments at zero external magnetic field, we find a strongly reduced spin valve conductance for the two anti-parallel configurations, with a single QD polarization of $\sim 27\%$. The TMR can be significantly improved by a small external field and optimized gate voltages, which results in a continuously electrically tunable TMR between $+80\%$ and $-90\%$. A simple model quantitatively reproduces all our findings, suggesting a gate tunable QD polarization of $\pm 80\%$. Such versatile spin-polarized QDs are suitable for various applications, for example in spin projection and correlation experiments in a large variety of nanoelectronics experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Controllable p$-$n junctions in three$-$dimensional Dirac semimetal Cd$_3$As$_2$ nanowires

We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, where p$-$n junctions are formed. The conductance in the p$-$n junction regime decreases drastically when a magnetic field is applied perpendicular to the nanowire, which is due to the suppression of Klein tunneling. In this regime, the device shows quantum dot behavior. On the other hand, clear conductance plateaus are observed in the n$-$n regime likely owing to the cyclotron motion of carriers at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

We present a comprehensive electrical characterization of an InAs/InP nanowire heterostructure, comprising two InP barriers forming a quantum dot (QD), two adjacent lead segments (LSs) and two metallic contacts, and demonstrate how to extract valuable quantitative information of the QD. The QD shows very regular Coulomb blockade (CB) resonances over a large gate voltage range. By analyzing the resonance line shapes, we map the evolution of the tunnel couplings from the few to the many electron regime, with electrically tunable tunnel couplings from <1 $μ$eV to >600 $μ$eV, and a transition from the temperature to the lifetime broadened regime. The InP segments form tunnel barriers with almost fully symmetric tunnel couplings and a barrier height of ~350 meV. All of these findings can be understood in great detail based on the deterministic material composition and geometry. Our results demonstrate that integrated InAs/InP QDs provide a promising platform for electron tunneling spectroscopy in InAs nanowires, which can readily be contacted by a variety of superconducting materials to investigate subgap states in proximitized NW regions, or be used to characterize thermoelectric nanoscale devices in the quantum regime.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Intrinsically-limited timing jitter in molybdenum silicide superconducting nanowire single-photon detectors

Recent progress in the development of superconducting nanowire single-photon detectors (SNSPDs) has delivered excellent performances, and has had a great impact on a range of research fields. The timing jitter, which denotes the temporal resolution of the detection, is a crucial parameter for many applications. Despite extensive work since their apparition, the lowest jitter achievable with SNSPDs is still not clear, and the origin of the intrinsic limits is not fully understood. Understanding its intrinsic behaviour and limits is a mandatory step toward improvements. Here, we report our experimental study on the intrinsically-limited timing jitter in molybdenum silicide (MoSi) SNSPDs. We show that to reach intrinsic jitter, several detector properties such as the latching current and the kinetic inductance of the devices have to be understood. The dependence on the nanowire cross-section and the energy dependence of the intrinsic jitter are exhibited, and the origin of the limits are explicited. System timing jitter of 6.0 ps at 532 nm and 10.6 ps at 1550 nm photon wavelength have been obtained.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Mobility enhancement in graphene by in situ reduction of random strain fluctuations

Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present transport measurements in hBN-encapsulated devices where such strain fluctuations can be in situ reduced by increasing the average uniaxial strain. When $\sim0.2\%$ of uniaxial strain is applied to the graphene, an enhancement of the carrier mobility by $\sim35\%$ is observed while the residual doping reduces by $\sim39\%$. We demonstrate a strong correlation between the mobility and the residual doping, from which we conclude that random local strain fluctuations are the dominant source of disorder limiting the mobility in these devices. Our findings are also supported by Raman spectroscopy measurements.

0 citations0 reviewsNo code linkedOpen access