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Romain Maurand

Romain Maurand appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

13 published item(s)

preprint2021arXiv

Magnetic field resilient high kinetic inductance superconducting niobium nitride coplanar waveguide resonators

We characterize niobium nitride (NbN) $λ/2$ coplanar waveguide resonators, which were fabricated from a 10nm thick film on silicon dioxide grown by sputter deposition. For films grown at 120°C we report a superconducting critical temperature of 7.4K associated with a normal square resistance of 1k$Ω$ leading to a kinetic inductance of 192pH/$\Box$. We fabricated resonators with a characteristic impedance up to 4.1k$Ω$ and internal quality factors $Q_\mathrm{i} > 10^4$ in the single photon regime at zero magnetic field. Moreover, in the many photons regime, the resonators present high magnetic field resilience with $Q_\mathrm{i} > 10^4$ in a 6T in-plane magnetic field as well as in a 300mT out-of-plane magnetic field. These findings make such resonators a compelling choice for cQED experiments involving quantum systems with small electric dipole moments operated in finite magnetic fields.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Charge detection in an array of CMOS quantum dots

The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state and readout spins through spin-to-charge conversion mechanisms. In this paper, we use two methods based on either a single-lead charge detector, or a reprogrammable single electron transistor. Thanks to these methods, we study the charge dynamics and sensitivity by performing single shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction

We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHz for the first holes, an important step towards a robust hole spin-orbit qubit.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Guiding of Electrons in a Few Mode Ballistic Graphene Channel

In graphene, the extremely fast charge carriers can be controlled by electron-optical elements, such as waveguides, in which the transmissivity is tuned by the wavelength. In this work, charge carriers are guided in a suspended ballistic few-mode graphene channel, defined by electrostatic gating. By depleting the channel, a reduction of mode number and steps in the conductance are observed, until the channel is completely emptied. The measurements are supported by tight-binding transport calculations including the full electrostatics of the sample.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Scalable Tight-Binding Model for Graphene

Artificial graphene consisting of honeycomb lattices other than the atomic layer of carbon has been shown to exhibit electronic properties similar to real graphene. Here, we reverse the argument to show that transport properties of real graphene can be captured by simulations using "theoretical artificial graphene." To prove this, we first derive a simple condition, along with its restrictions, to achieve band structure invariance for a scalable graphene lattice. We then present transport measurements for an ultraclean suspended single-layer graphene pn junction device, where ballistic transport features from complex Fabry-Pérot interference (at zero magnetic field) to the quantum Hall effect (at unusually low field) are observed and are well reproduced by transport simulations based on properly scaled single-particle tight-binding models. Our findings indicate that transport simulations for graphene can be efficiently performed with a strongly reduced number of atomic sites, allowing for reliable predictions for electric properties of complex graphene devices. We demonstrate the capability of the model by applying it to predict so-far unexplored gate-defined conductance quantization in single-layer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Snake Trajectories in Ultraclean Graphene p-n Junctions

Snake states are trajectories of charge carriers curving back and forth along an interface. There are two types of snake states, formed by either inverting the magnetic field direction or the charge carrier type at an interface. Whereas the former has been demonstrated in GaAs-AlGaAs heterostructures, the latter has become conceivable only with the advance of ballistic graphene where a gapless p-n interface governed by Klein tunneling can be formed. Such snake states were hidden in previous experiments due to limited sample quality. Here we report on magneto-conductance oscillations due to snake states in a ballistic suspended graphene p-n-junction which occur already at a very small magnetic field of 20mT. The visibility of 30% is enabled by Klein collimation. Our finding is firmly supported by quantum transport simulations. We demonstrate the high tunability of the device and operate it in different magnetic field regimes

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Fabrication of ballistic suspended graphene with local-gating

Herein we discuss the fabrication of ballistic suspended graphene nanostructures supplemented with local gating. Using in-situ current annealing, we show that exceptional high mobilities can be obtained in these devices. A detailed description is given of the fabrication of bottom and different top-gate structures, which enable the realization of complex graphene structures. We have studied the basic building block, the p-n junction in detail, where a striking oscillating pattern was observed, which can be traced back to Fabry-Perot oscillations that are localized in the electronic cavities formed by the local gates. Finally we show some examples how the method can be extended to incorporate multi-terminal junctions or shaped graphene. The structures discussed here enable the access to electron-optics experiments in ballistic graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Large-scale BN tunnel barriers for graphene spintronics

We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by h-BN, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of 260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ballistic interferences in suspended graphene

Graphene is a 2-dimensional (2D) carbon allotrope with the atoms arranged in a honeycomb lattice. The low-energy electronic excitations in this 2D crystal are described by massless Dirac fermions that have a linear dispersion relation similar to photons. Taking advantage of this optics-like electron dynamics, generic optical elements like lenses, beam splitters and wave guides have been proposed for electrons in engineered ballistic graphene. Tuning of these elements relies on the ability to adjust the carrier concentration in defined areas, including the possibility to create bipolar regions of opposite charge (p-n regions). However, the combination of ballistic transport and complex electrostatic gating remains challenging. Here, we report on the fabrication and characterization of fully suspended graphene p-n junctions. By local electro-static gating, resonant cavities can be defined, leading to complex Fabry-Perot interference patterns in the unipolar and the bipolar regime. The amplitude of the observed conductance oscillations accounts for quantum interference of electrons that propagate ballistically over long distances exceeding 1 micron. We also demonstrate that the visibility of the interference pattern is enhanced by Klein collimation at the p-n interface. This finding paves the way to more complex gate-controlled ballistic graphene devices and brings electron optics in graphene closer to reality.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Non-local spectroscopy of Andreev bound states

We experimentally investigate Andreev bound states (ABSs) in a carbon nanotube quantum dot (QD) connected to a superconducting Nb lead (S). A weakly coupled normal metal contact acts as a tunnel probe that measures the energy dispersion of the ABSs. Moreover we study the response of the ABS to non-local transport processes, namely Cooper pair splitting and elastic co-tunnelling, that are enabled by a second QD fabricated on the same nanotube on the opposite side of S. We find an appreciable non-local conductance with a rich structure, including a sign reversal at the ground state transition from the ABS singlet to a degenerate magnetic doublet. We describe our device by a simple rate equation model that captures the key features of our observations and demonstrates that the sign of the non-local conductance is a measure for the charge distribution of the ABS, given by the respective Bogoliubov-de Gennes amplitudes $u$ and $v$.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin Symmetry of the Bilayer Graphene Groundstate

We show nonlinear transport experiments on clean, suspended bilayer graphene that reveal a gap in the density of states. Looking at the evolution of the gap in magnetic fields of different orientation, we find that the groundstate is a spin-ordered phase. Of the three possible gapped groundstates that are predicted by theory for equal charge distribution between the layers, we can therefore exclude the quantum anomalous Hall phase, leaving the layer antiferromagnet and the quantum spin Hall phase as the only possible gapped groundstates for bilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Homogeneity of Bilayer Graphene

We present non-linear transport measurements on suspended, current annealed bilayer graphene devices. Using a multi-terminal geometry we demonstrate that devices tend to be inhomogeneous and host two different electronic phases next to each other. Both of these phases show gap-like features of different magnitude in non-linear transport at low charge carrier densities, as already observed in previous studies. Here, we investigate the magnetic field dependence and find that both features grow with increasing field, the smaller one with 0.6 meV/T, the larger one with a 5-10 times higher field dependence. We attribute the larger of the two gaps to an interaction induced broken symmetry state and the smaller one to localization in the more disordered parts of the device.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

First order $0/π$ quantum phase transition in the Kondo regime of a superconducting carbon nanotube quantum dot

We study a carbon nanotube quantum dot embedded into a SQUID loop in order to investigate the competition of strong electron correlations with proximity effect. Depending whether local pairing or local magnetism prevails, a superconducting quantum dot will respectively exhibit positive or negative supercurrent, referred to as a 0 or $π$ Josephson junction. In the regime of strong Coulomb blockade, the 0 to $π$ transition is typically controlled by a change in the discrete charge state of the dot, from even to odd. In contrast, at larger tunneling amplitude the Kondo effect develops for an odd charge (magnetic) dot in the normal state, and quenches magnetism. In this situation, we find that a first order 0 to $π$ quantum phase transition can be triggered at fixed valence when superconductivity is brought in, due to the competition of the superconducting gap and the Kondo temperature. The SQUID geometry together with the tunability of our device allows the exploration of the associated phase diagram predicted by recent theories. We also report on the observation of anharmonic behavior of the current-phase relation in the transition regime, that we associate with the two different accessible superconducting states. Our results ultimately reveal the spin singlet nature of the Kondo ground state, which is the key process in allowing the stability of the 0-phase far from the mixed valence regime.

0 citations0 reviewsNo code linkedOpen access