BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Shu-Shen Li

Shu-Shen Li appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciquant-phphysics.comp-phcond-mat.str-elcond-mat.dis-nncond-mat.othercond-mat.stat-mechcond-mat.supr-conphysics.app-phphysics.chem-ph

Catalog footprint

What is connected

52works
11topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

52 published item(s)

preprint2022arXiv

Algebraic structure of path-independent quantum control

Path-independent (PI) quantum control has recently been proposed to integrate quantum error correction and quantum control [Phys. Rev. Lett. 125, 110503 (2020)], achieving fault-tolerant quantum gates against ancilla errors. Here we reveal the underlying algebraic structure of PI quantum control. The PI Hamiltonians and propagators turn out to lie in an algebra isomorphic to the ordinary matrix algebra, which we call the PI matrix algebra. The PI matrix algebra, defined on the Hilbert space of a composite system (including an ancilla system and a central system), is isomorphic to the matrix algebra defined on the Hilbert space of the ancilla system. By extending the PI matrix algebra to the Hilbert-Schmidt space of the composite system, we provide an exact and unifying condition for PI quantum control against ancilla noise.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Transport through Quantum Anomalous Hall Bilayers with Lattice Mismatch

We theoretically investigate quantum transport properties of quantum anomalous Hall bilayers, with arbitrary ratio of lattice constants, i.e., with lattice mismatch. In the simplest case of ratio 1 (but with different model parameters in two layers), the inter-layer coupling results in resonant traversing between forward propagating waves in two layers. In the case of generic ratios, there is a quantized conductance plateau originated from two Chern numbers associated with two layers. However, the phase boundary of this quantization plateau consists of a fractal transitional region (instead of a clear transition line) of interpenetrating edge states (with quantized conductance) and bulk states (with unquantized conductance). We attribute these bulk states as mismatch induced in-gap bulk states. Different from in-gap localized states induced by random disorder, these in-gap bulk states are extended in the limit of vanishing random disorder. However, the detailed fine structure of this transitional region is sensitive to disorder, lattice structure, sample size, and even the configuration of leads connecting to it, due to the bulk and topologically trivial nature of these in-gap bulk states.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

An upper and lower bound to the orientation-dependent linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum wells

Our recent study [Phys. Rev. B 103, 085309 (2021)] verified the existence of $\bf{k}$-linear Rashba spin-orbit coupling (SOC) of two-dimensional hole gases in quantum wells (QWs) which originates from a combination of heavy-hole-light-hole (HH-LH) mixing and direct dipolar coupling to the external electric field. However, the Rashba SOC dependence on QW orientations remains unclear. Here, we explore this dependence on QW orientations and uncover an upper and lower bound to the orientation-dependent $\bf{k}$-linear Rashba SOC along the [110]- and [111]- crystalline directions by performing atomistic pseudopotential calculations associated with theoretical analysis. The intrinsic HH-LH mixing at the Brillouin zone center, maximal in [110]-oriented quantum wells and minimal in [111]- and [001]-oriented QWs, plays an essential role. Remarkably, we find that only $\bf{k}$-cubic Rashba SOC exists in [111]-oriented QWs. These findings help understand the physical mechanism of the Rashba SOC dependence on QW orientations and provide a strategic prediction for experiments to realize the large Rashba SOC.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dynamic short-range correlation in photoinduced disorder phase transitions

Ultrafast photoexcitation can induce a nonequilibrium dynamic with electron-lattice interaction, offering an effective way to study photoinduced phase transitions (PIPTs) in solids. The issue that atomic displacements after photoexcitation belong to coherent change or disordered process, has become a controversy in the PIPT community. Using real-time time-dependent density functional theory (rt-TDDFT) simulations, we obtain both the coherent and the disordered PIPTs (dimer dissociation) in IrTe2 with the different electronic occupations. More importantly, we found that in the disordered phase transition, there exists a local correlation between different dimers regarding their dissociation status. One can define vertical groups across the layers. The dimers in the same group will dissociate in a correlated fashion: they either all dissociate, or all not dissociate. On the other hand, the dimers in neighboring groups will have an anti-correlation: if the dimers in one group dissociate, the dimers in the neighboring group tend not to be dissociated, and vice versus.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Origin of giant valley splitting in silicon quantum wells induced by superlattice barriers

Enhancing valley splitting in SiGe heterostructures is a crucial task for developing silicon spin qubits. Complex SiGe heterostructures, sharing a common feature of four-monolayer (4ML) Ge layer next to the silicon quantum well (QW), have been computationally designed to have giant valley splitting approaching 9 meV. However, none of them has been fabricated may due to their complexity. Here, we remarkably simplify the original designed complex SiGe heterostructures by laying out the Si QW directly on the Ge substrate followed by capping a (Ge4Si4)n superlattice(SL) barrier with a small sacrifice on VS as it is reduced from a maximum of 8.7 meV to 5.2 meV. Even the smallest number of periods (n = 1) will also give a sizable VS of 1.6 meV, which is large enough for developing stable spin qubits. We also develop an effective Hamiltonian model to reveal the underlying microscopic physics of enhanced valley splitting by (Ge4Si4)n SL barriers. We find that the presence of the SL barrier will reduce the VS instead of enhancing it. Only the (Ge4Si4)n SL barriers with an extremely strong coupling with Si QW valley states provide a remarkable enhancement in VS. These findings lay a solid theoretical foundation for the realization of sufficiently large VS for Si qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

s-d coupling enhanced phonon anharmonicity in copper-based compounds

Materials with ultralow thermal conductivity are of great interest for efficient energy conversion and thermal barrier coating. Copper-based semiconductors such as copper chalcogenides and copper halides are known to possess extreme low thermal conductivity, whereas the fundamental origin of the low thermal conductivity observed in the copper-based materials remains elusive. Here, we reveal that s-d coupling induced giant phonon anharmonicity is the fundamental mechanism responsible for the ultralow thermal conductivity of copper compounds. The symmetry controlled strong coupling of high-lying occupied copper 3d orbital with the unoccupied 4s state under thermal vibration remarkably lowers the lattice potential barrier, which enhances anharmonic scattering between phonons. This understanding is confirmed by temperature-dependent Raman spectra measurements. Our study offers an insight at atomic level connecting electronic structures with phonon vibration modes, and thus sheds light on materials properties that rely on electron-phonon coupling, such as thermoelectricity and superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The emergent linear Rashba spin-orbit coupling offering the fast manipulation of hole-spin qubits in germanium

The electric dipole spin resonance (EDSR) combining strong spin-orbit coupling (SOC) and electric-dipole transitions facilitates fast spin control in a scalable way, which is the critical aspect of the rapid progress made recently in germanium (Ge) hole-spin qubits. However, a puzzle is raised because centrosymmetric Ge lacks the Dresselhaus SOC, a key element in the initial proposal of the hole-based EDSR. Here, we demonstrate that the recently uncovered finite k-linear Rashba SOC of 2D holes offers fast hole spin control via EDSR with Rabi frequencies in excellent agreement with experimental results over a wide range of driving fields. We also suggest that the Rabi frequency can reach 500 MHz under a higher gate electric field or multiple GHz in a replacement by [110]oriented wells. These findings bring a deeper understanding for hole-spin qubit manipulation and offer design principles to boost the gate speed.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The seeds and homogeneous nucleation of photoinduced nonthermal melting in semiconductors due to self-amplified local dynamic instability

Laser-induced nonthermal melting in semiconductors has been studied over the last four decades, but the underlying mechanism is still under debate. Here, by utilizing an advanced real-time time-dependent density functional theory simulation, we reveal that the photoexcitation-induced ultrafast nonthermal melting in silicon occurs via homogeneous nucleation with random seeds originating from a self-amplified local dynamic instability at the photoexcited states rather than by simultaneously breaking of all bonds, as suggested by the inertial model, phonon instability, or Coulombic repulsion mechanisms. Due to this local dynamic instability, any initial small random thermal displacements of atoms can be amplified by a charge transfer of photoexcited carriers, which in turn creates a local self-trapping center for the excited carriers and yields the random nucleation seeds. This finding provides fresh insights into photoinduced ultrafast nonthermal melting.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Uniting the order and disorder dynamics in photoexcited VO2

Photoinduced phase transition (PIPT) is always treated as a coherent process, but ultrafast disordering in PIPT is observed in recent experiments. Utilizing the real-time time-dependent density functional theory (rt-TDDFT) method, here, we track the motion of individual vanadium (V) ions during PIPT in VO2 and uncover that their coherent or disordered dynamics can be manipulated by tuning the laser fluence. We find that the photoexcited holes generate a force on each V-V dimer to drive their collective coherent motion, in competing with the thermal-induced vibrations. If the laser fluence is so weak that the photoexcited hole density is too low to drive the phase transition alone, the PIPT is a disordered process due to the interference of thermal phonons. We also reveal that the photoexcited holes populated by the V-V dimerized bonding states will become saturated if the laser fluence is too strong, limiting the timescale of photoinduced phase transition.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Chebyshev Polynomial Method to Landauer-Büttiker Formula of Quantum Transport in Nanostructures

Landauer-Büttiker formula describes the electronic quantum transports in nanostructures and molecules. It will be numerically demanding for simulations of complex or large size systems due to, for example, matrix inversion calculations. Recently, Chebyshev polynomial method has attracted intense interests in numerical simulations of quantum systems due to the high efficiency in parallelization, because the only matrix operation it involves is just the product of sparse matrices and vectors. Many progresses have been made on the Chebyshev polynomial representations of physical quantities for isolated or bulk quantum structures. Here we present the Chebyshev polynomial method to the typical electronic scattering problem, the Landauer-Büttiker formula for the conductance of quantum transports in nanostructures. We first describe the full algorithm based on the standard bath kernel polynomial method (KPM). Then, we present two simple butefficient improvements. One of them has a time consumption remarkably less than the direct matrix calculation without KPM. Some typical examples are also presented to illustrate the numerical effectiveness.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Emergence of an upper bound to the electric field controlled Rashba spin splitting in InAs nanowires

The experimental assessment of the strength ($α_R$) of the Rashba spin-orbit coupling is rather indirect and involves the measurement of the spin relaxation length from magnetotransport, together with a model of weak antilocalization. The analysis of the spin relaxation length in nanowires, however, clouds the experimental assessment of the $α_R$ and leads to the prevailing belief that it can be tuned freely with electric field--a central tenant of spintronics. Here, we report direct theory of $α_R$ leading to atomistic calculations of the spin band structure of InAs nanowires upon application of electric field-- a direct method that does not require a theory of spin relaxation. Surprisingly, we find an {\it upper bound} to the electric field tunable Rashba spin splitting and the ensuing $α_R$; for InAs nanowires, $α_R$ is pinned at about 170 meVÅ irrespective of the applied field strength. We find that this pinning is due to the quantum confined stark effect, that reduces continuously the nanowire band gap with applied electric field, leading eventually to band gap closure and a considerable increase in the density of free carriers. This results in turn in a strong screening that prevents the applied electric field inside the nanowire from increasing further beyond around 200 kV/cm for InAs nanowires. Therefore, further increase in the gate voltage will not increase $α_R$. This finding clarifies the physical trends to be expected in nanowire Rashba SOC and the roles played by the nano size and electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Emergence of the strong tunable linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum

Two-dimensional hole gases in semiconductor quantum wells are promising platforms for spintronics and quantum computation but suffer from the lack of the $\bf{k}$-linear term in the Rashba spin-orbit coupling (SOC), which is essential for spin manipulations without magnetism and commonly believed to be a $\bf{k}$-cubic term as the lowest order. Here, contrary to conventional wisdom, we uncover a strong and tunable $\bf{k}$-linear Rashba SOC in two-dimensional hole gases (2DHG) of semiconductor quantum wells by performing atomistic pseudopotential calculations combined with an effective Hamiltonian for a model system of Ge/Si quantum wells. Its maximal strength exceeds 120 meVÅ, comparable to the highest values reported in narrow bandgap III-V semiconductor 2D electron gases, which suffers from short spin lifetime due to the presence of nuclear spin. We also illustrate that this emergent $\bf{k}$-linear Rashba SOC is a first-order direct Rashba effect, originating from a combination of heavy-hole-light-hole mixing and direct dipolar intersubband coupling to the external electric field. These findings confirm Ge-based 2DHG to be an excellent platform towards large-scale quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Numerical Study of Disorder on the Orbital Magnetization in Two Dimensions

The modern theory of orbital magnetization (OM) was developed by using Wannier function method, which has a formalism similar with the Berry phase. In this manuscript, we perform a numerical study on the fate of the OM under disorder, by using this method on the Haldane model in two dimensions, which can be tuned between a normal insulator or a Chern insulator at half filling. The effects of increasing disorder on OM for both cases are simulated. Energy renormalization shifts are observed in the weak disorder regime and topologically trivial case, which was predicted by a self-consistent T-matrix approximation. Besides this, two other phenomena can be seen. One is the localization trend of the band orbital magnetization. The other is the remarkable contribution from topological chiral states arising from nonzero Chern number or large value of integrated Berry curvature. If the fermi energy is fixed at the gap center of the clean system, there is an enhancement of |M| at the intermediate disorder, for both cases of normal and Chern insulators, which can be attributed to the disorder induced topological metal state before localization.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

A realistic dimension-independent approach for charged defect calculations in semiconductors

First-principles calculations of charged defects have become a cornerstone of research in semiconductors and insulators by providing insights into their fundamental physical properties. But current standard approach using the so-called jellium model has encountered both conceptual ambiguity and computational difficulty, especially for low-dimensional semiconducting materials. In this Communication, we propose a physical, straightforward, and dimension-independent universal model to calculate the formation energies of charged defects in both three-dimensional (3D) bulk and low-dimensional semiconductors. Within this model, the ionized electrons or holes are placed on the realistic host band-edge states instead of the virtual jellium state, therefore, rendering it not only naturally keeps the supercell charge neutral, but also has clear physical meaning. This realistic model reproduces the same accuracy as the traditional jellium model for most of the 3D semiconducting materials, and remarkably, for the low-dimensional structures, it is able to cure the divergence caused by the artificial long-range electrostatic energy introduced in the jellium model, and hence gives meaningful formation energies of defects in charged state and transition energy levels of the corresponding defects. Our realistic method, therefore, will have significant impact for the study of defect physics in all low-dimensional systems including quantum dots, nanowires, surfaces, interfaces, and 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Anharmonic corrections to the multiphonon deep-level charge capture ab initio calculations for semiconductors

Nonradiative carrier recombination at semiconductor deep centers is of great importance to both fundamental physics and device engineering. In this letter, we provide a revised analysis of K. Huang's original nonradiative multi-phonon (NMP) theory with ab initio calculations. First, we identify at first-principle level that Huang's concise formula gives the same results as the matrix based formula, and Huang's high temperature formula provides an analytical expression for the coupling constant in Marcus theory. Secondly, the anharmonic effects are corrected by taking into account local phonon mode variation at different charge states of the defect. The corrected capture rates for defects in GaN and SiC agree well with experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Atomic-scale positioning of single spins via multiple nitrogen-vacancy centers

We present a scheme of positioning a single electron spin with sub-nanometer resolution through multiple nitrogen-vacancy centers in diamond. With unwanted noise suppressed by dynamical decoupling, the spin coherence of each center develops characteristic oscillations due to a single electron spin located $4{\sim20}$ nm away from the centers. We can extract the position information from the characteristic electron spin-coherence oscillations of each center. This scheme is useful for high-resolution nanoscale magnetometry and spin-based quantum computing.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Resonant impurities states-driven topological transition in quantum well

We demonstrate theoretically that a new system quantum well can realize the topological transition based on the 16-band kp model. Utilizing the strain introduced by the doped impurities, the band anti crossing induced by the doped nitrogen and valence band anti crossing induced by the doped bismuth, the band gap of the quantum well is rapidly decreased and even becomes negative. As a result, the topological transitions arise. Furthermore, the band gap as a function of the concentration of nitrogen and bismuth is calculated, where the negative gap corresponds to the topological phase. Noting the cancel of strain resulting from the combination of tensile strain introduced by N and strain introduced by Bi, we can easily tune the ratio of the N and Bi to meet the requirement of strain in the crystal growth procedure. Our proposal provides a promising approach for topological insulator in traditional semiconductor system utilizing the semiconductor fabrication technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Route towards Localization for Quantum Anomalous Hall Systems with Chern Number 2

The quantum anomalous Hall system with Chern number 2 can be destroyed by sufficiently strong disorder. During its process towards localization, it was found that the electronic states will be directly localized to an Anderson insulator (with Chern number 0), without an intermediate Hall plateau with Chern number 1. Here we investigate the topological origin of this phenomenon, by calculating the band structures and Chern numbers for disordered supercells. We find that on the route towards localization, there exists a hidden state with Chern number 1, but it is too short and too fluctuating to be practically observable. This intermediate state cannot be stabilized even after some "smart design" of the model and this should be a universal phenomena for insulators with high Chern numbers. By performing numerical scaling of conductances, we also plot the renormalization group flows for this transition, with Chern number 1 state as an unstable fixed point. This is distinct from known results, and can be tested by experiments and further theoretical analysis.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The classical nature of nuclear spin noise near clock transitions of Bi donors in silicon

Whether a quantum bath can be approximated as classical noise is a fundamental issue in central spin decoherence and also of practical importance in designing noise-resilient quantum control. Spin qubits based on bismuth donors in silicon have tunable interactions with nuclear spin baths and are first-order insensitive to magnetic noise at so-called clock-transitions (CTs). This system is therefore ideal for studying the quantum/classical nature of nuclear spin baths since the qubit-bath interaction strength determines the back-action on the baths and hence the adequacy of a classical noise model. We develop a Gaussian noise model with noise correlations determined by quantum calculations and compare the classical noise approximation to the full quantum bath theory. We experimentally test our model through dynamical decoupling sequence of up to 128 pulses, finding good agreement with simulations and measuring electron spin coherence times approaching one second - notably using natural silicon. Our theoretical and experimental study demonstrates that the noise from a nuclear spin bath is analogous to classical Gaussian noise if the back-action of the qubit on the bath is small compared to the internal bath dynamics, as is the case close to CTs. However, far from the CTs, the back-action of the central spin on the bath is such that the quantum model is required to accurately model spin decoherence.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Zinc-blende and wurtzite GaAs quantum dots in nanowires studied using hydrostatic pressure

We report both zinc-blende (ZB) and wurtzite (WZ) crystal phase self-assembled GaAs quantum dots (QDs) embedding in a single GaAs/AlGaAs core-shell nanowires (NWs). Optical transitions and single-photon characteristics of both kinds of QDs have been investigated by measuring photoluminescence (PL) and time-resolved PL spectra upon application of hydrostatic pressure. We find that the ZB QDs are of direct band gap transition with short recombination lifetime (~1 ns) and higher pressure coefficient (75-100 meV/GPa). On the contrary, the WZ QDs undergo a direct-to-pseudodirect bandgap transition as a result of quantum confinement effect, with remarkably longer exciton lifetime (4.5-74.5 ns) and smaller pressure coefficient (28-53 meV/GPa). These fundamentally physical properties are further examined by performing state-of-the-art atomistic pseudopotential calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Critical behavior of the energy gap and its relation with the Berry phase close to the excited state quantum phase transition in the Lipkin model

In our previous work [Phys. Rev. A \textbf{85}, 044102 (2012)], we have studied the Berry phase of the ground state and exited states in the Lipkin model. In this paper, using Hellmann-Feynman theorem, we derive the relation between the energy gap and the Berry phase close to the excited state quantum phase transition (ESQPT) in the Lipkin model. We find that the energy gap is linearly dependent upon the Berry phase close to the ESQPT. As a result, the critical behavior of the energy gap is similar to that of the Berry phase. In addition, we also perform a semiclassical qualitative analysis about the critical behavior of the energy gap.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Decoherence of a quantum system coupled to an XY spin chain: Role of the initial state of the spin chain

We study the decoherence of a coupled quantum system consisting of a central spin and its correlated environment described by a general $XY$ spin-chain model. We make it clear that the evolution of the coherence factor sensitively depends on the initial states of the environment spin-chain. Specially, the dynamical evolution of the coherence factor of the central spin is numerically and analytically investigated in both weak and strong coupling cases for different initial states including thermal equilibrium state. In both weak and strong coupling regimes, the decay of the coherence factor can be approximated by a Gaussian and in the strong coupling regime the coherence factor oscillate rapidly under a Gaussian envelope. The width of the Gaussian decay (envelope) has been studied in details and we explained the origin of the so-called universal regime.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Uncovering many-body correlations in nanoscale nuclear spin baths by central spin decoherence

Many-body correlations can yield key insights into the nature of interacting systems; however, detecting them is often very challenging in many-particle physics, especially in nanoscale systems. Here, taking a phosphorus donor electron spin in a natural-abundance 29Si nuclear spin bath as our model system, we discover both theoretically and experimentally that many-body correlations in nanoscale nuclear spin baths produce identifiable signatures in the decoherence of the central spin under multiple-pulse dynamical decoupling control. We find that when the number of decoupling -pulses is odd, central spin decoherence is primarily driven by second-order nuclear spin correlations (pairwise flip-flop processes). In contrast, when the number of -pulses is even, fourth-order nuclear spin correlations (diagonal interaction renormalized pairwise flip-flop processes) are principally responsible for the central spin decoherence. Many-body correlations of different orders can thus be selectively detected by central spin decoherence under different dynamical decoupling controls, providing a useful approach to probing many-body processes in nanoscale nuclear spin baths.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Valley polarization in graphene-silicene-graphene heterojunction

Considering the difference of energy bands in graphene and silicene, we put forward a new model of the graphene-silicene-graphene (GSG) heterojunction. In the GSG, we study the valley polarization properties in a zigzag nanoribbon in the presence of an external electric field. We find the energy range associated with the bulk gap of silicene has a valley polarization more than 95%. Under the protection of the topological edge states of the silicene, the valley polarization remains even the small non-magnetic disorder is introduced. These results have certain practical significance in applications for future valley valve.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electron Delocalization in Gate-Tunable Gapless Silicene

The application of a perpendicular electric field can drive silicene into a gapless state, characterized by two nearly fully spin-polarized Dirac cones owing to both relatively large spin-orbital interactions and inversion symmetry breaking. Here we argue that since inter-valley scattering from non-magnetic impurities is highly suppressed by time reversal symmetry, the physics should be effectively single-Dirac-cone like. Through numerical calculations, we demonstrate that there is no significant backscattering from a single impurity that is non-magnetic and unit-cell uniform, indicating a stable delocalized state. This conjecture is then further confirmed from a scaling of conductance for disordered systems using the same type of impurities.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Interplay between edge and bulk states in silicene nanoribbon

We investigate the interplay between the edge and bulk states, induced by the Rashba spin-orbit coupling, in a zigzag silicene nanoribbon in the presence of an external electric field. The interplay can be divided into two kinds, one is the interplay between the edge and bulk states with opposite velocities, and the other is that with the same velocity direction. The former can open small direct spin-dependent subgaps. A spin-polarized current can be generated in the nanoribbon as the Fermi energy is in the subgaps. While the later can give rise to the spin precession in the nanoribbon. Therefore, the zigzag silicene nanoribbon can be used as an efficient spin filter and spin modulation device.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Structural stability of lattice-matched heterovalent semiconductor superlattices

Lattice-matched heterovalent alloys and superlattices have some unique physical properties. For example, their band gap can change by a large amount without significant change in their lattice constants, thus they have great potential for optelectronic applications. Using first-principles total energy calculation and Monte Carlo simulation as well as lattice harmonic expansion, we systematically study the stability of the heterovalent superlattices. We show that the chemical trend of stability of lattice-matched heterovalent superlattices is significantly different from lattice-mismatched isovalent superlattices, because for lattice-mismatched isovalent superlattices the stability is mostly determined by strain, whereas for lattice-matched nonisovalent superlattices the interfacial energy depend not only on the bond energy but also on the Coulomb energy derived from donor- and acceptor-like wrong bonds. In the short-period heterovalent superlattices, the abrupt [111] interface has the lowest energy even though it is polar, whereas for the long-period heterovalent superlattices, the [110] interface has the lowest energy. On the contrary, [201] superlattices are usually the most stable for lattice-mismatched isovalent superlattices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Adsorption and dissociation of H$_{2}$O monomer on ceria(111): Density functional theory calculations

The adsorption properties of isolated H$_{2}$O molecule on stoichiometric and reduced (with on-surface oxygen vacancy) ceria(1111) surfaces at low coverage are theoretically investigated by using density-functional-theory+\emph{U} calculations and \textit{ab initio} molecular dynamics simulations. We identify the most stable adsorption configurations on these two kinds of surfaces, which form two hydrogen bonds between the water molecule and the oxide surface. The electronic structures indicate that the hybridization of the molecular orbitals of water and surface-layer O-2\emph{p} states dominates the interactions between adsorbate and substrate. The barrier of 0.51 eV for water diffusion on the stoichiometric surface implies the inertia of water unless up to a high temperature of 600 K, which is confirmed by the molecular dynamics simulations. For the reduced surface, we find that the oxygen vacancy obviously enhances the interaction. Moreover, it is facilitated for water to dissociate into H and OH species with a hydroxyl surface formed, instead of oxidizing the reduced surface with the production of hydrogen gas. In addition, the molecular dynamics simulations at low temperature 100 K confirm the dissociation process.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

First-principles study of native point defects in topological insulator Bi$_2$Se$_3$

The \emph{p}-type Bi$_{2}$Se$_{3}$ is much desirable as a promising thermoelectric material and topological insulator, while the naturally grown Bi$_{2}$Se$_{3}$ is always \emph{n}-type doped by native point defects. Here we use first-principles calculations to identify the origin of the \emph{n}-type tendency in bulk Bi$_{2}$Se$_{3}$: The Se vacancies (V$_\text{Se1}$ and V$_\text{Se2}$) and Se$_{\text{Bi}}$ antisite dominate the donorlike doping with low formation energy, while the predisposed Bi$_{\text{Se1}}$ defect results in the pair of V$_\text{Se1}$ and Bi interstitial, which is also a donor rather than an acceptor. Moreover, for Bi$_{2}$Se$_{3}$(111) surface, we find that the band structures modulated by the defects explicitly account for the existing experimental observations of \emph{n}-type preference.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Probing crossover from analogous weak antilocalization to localization by an Aharonov-Bohm interferometer on topological insulator surface

We propose a scanning tunneling microscopy Aharonov-Bohm (AB) interferometer on the surface of a topological insulator (TI) to probe the crossover from analogous weak antilocalization (WAL) to weak localization (WL) phenomenon via the AB oscillations in spin-resolved local density of states (LDOS). Based on our analytical and numerical results, we show that with increasing the energy gap of TI surface states, the $Φ_{0}/2$=$hc/2e$ periodic AB oscillations in spin-resolved LDOS gradually transit into the $Φ_{0}$ periodic oscillations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Pure spin current in a two-dimensional topological insulator

We predict a mechanism to generate a pure spin current in a two-dimensional topological insulator. As the magnetic impurities exist on one of edges of the two-dimensional topological insulator, a gap is opened in the corresponding gapless edge states but another pair of gapless edge states with opposite spin are still protected by the time-reversal symmetry. So the conductance plateaus with the half-integer values $e^2/h$ can be obtained in the gap induced by magnetic impurities, which means that the pure spin current can be induced in the sample. We also find that the pure spin current is insensitive to weak disorder. The mechanism to generate pure spin currents is generalized for two-dimensional topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum Corrals and Quantum Mirages on the Surface of a Topological Insulator

We study quantum corrals on the surface of a topological insulator (TI). Different resonance states induced by nonmagnetic (NM), antiferromagnetic (AFM), and ferromagnetic (FM) corrals are found. Intriguingly, the spin is clearly energy-resolved in a FM corral, which can be effectively used to operate surface carrier spins of TI. We also show that an observable quantum mirage of a magnetic impurity can be projected from the occupied into the empty focus of a FM elliptic corral, while in NM and AFM corrals the mirage signal becomes negligibly weak. In addition, the modulation of the interaction between two magnetic impurities in the quantum corrals is demonstrated. These prominent effects may be measured by spin-polarized STM experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum Efficiency of Charge Qubit Measurements Using a Single Electron Transistor

The quantum efficiency, which characterizes the quality of information gain against information loss, is an important figure of merit for any realistic quantum detectors in the gradual process of collapsing the state being measured. In this work we consider the problem of solid-state charge qubit measurements with a single-electron-transistor (SET). We analyze two models: one corresponds to a strong response SET, and the other is a tunable one in response strength. We find that the response strength would essentially bound the quantum efficiency, making the detector non-quantum-limited. Quantum limited measurements, however, can be achieved in the limits of strong response and asymmetric tunneling. The present study is also associated with appropriate justifications for the measurement and backaction-dephasing rates, which were usually evaluated in controversial methods.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum spin Hall effect induced by electric field in silicene

We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by tuning the two kinds of Rashba spin-orbit couplings properly. Furthermore, the gapless edge states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that the quantum spin Hall effect can be induced by an external electric field in silicene, which may have certain practical significance in applications for future spintronics device.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quasiparticle states and quantum interference induce by magnetic impurities on a two-dimensional topological superconductor

We theoretically study the effect of localized magnetic impurities on two-dimensional topological superconductor (TSC). We show that the local density of states (LDOS) can be tuned by the effective exchange field $m$, the chemical potential $μ$ of TSC, and the distance $Δr$ as well as relative spin angle $α$ between two impurities. The changes in $Δr$ between two impurities alter the interference and result in significant modifications to the bonding and antibonding states. Furthermore, the bound-state spin LDOS induced by single and double magnetic impurity scattering, the quantum corrals, and the quantum mirages are also discussed. Finally, we briefly compare the impurities in TSC with those in topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin-polarized current induced by a local exchange field in a silicene nanoribbon

A mechanism to generate a spin-polarized current in a two-terminal zigzag silicene nanoribbon is predicted. As a weak local exchange field that is parallel to the surface of silicene is applied on one of edges of the silicene nanoribbon, a gap is opened in the corresponding gapless edge states but another pair of gapless edge states with opposite spin are still protected by the time-reversal symmetry. Hence, a spin-polarized current can be induced in the gap opened by the local exchange field in this two-terminal system. What is important is that the spin-polarized current can be obtained even in the absence of Rashba spin-orbit coupling and in the case of the very weak exchange filed. That is to say, the mechanism to generate the spin-polarized currents can be easily realized experimentally.We also find that the spin-polarized current is insensitive to weak disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Theory of multiple magnetic scattering for quasiparticles on a gapless topological insulator surface

We develop a general low-energy multiple-scattering partial-wave theory for gapless topological insulator (TI) surfaces in the presence of magnetic impurities. As applications, we discuss the differential cross section (CS) $dΛ/dφ$, the total CS $Λ_{tot}$, the Hall component of resistivity $Ω$, and inverse momentum relaxation time $Γ_{M}$ for single- and two-centered magnetic scattering. We show that differing from the nonmagnetic impurity scattering, $s\mathtt{-}$wave approximation is not advisable and convergent in the present case. The symmetry of CS is reduced and the backscattering occurs and becomes stronger with increasing the effective magnetic moment $M$ of single magnetic impurity. We show a non-zero perpendicular resistivity component $Ω$, which may be useful for tuning the Hall voltage of the sample. Consistent with the analysis of $dΛ/dφ$, by comparing $Γ_{M}$ with $Λ_{tot}$, we can determine different weights of backscattering and forward scattering. Similar to CS, $Ω$ and $Γ_{M}$ also exhibit oscillating behavior for multiple magnetic scattering centers due to interference effect.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Topological properties of Sb(111) surface: A density functional theory study

By using first-principles plane wave calculations, we systematically study the electronic properties of the thin film of antimony in (111) orientation. Considering the spin-orbit interaction, for stoichiometric surface, the topological states keep robust for six bilayers, and can be recovered in the three bilayer film, which are guarantied by time-reversal symmetry and inverse symmetry. For reduced surface doped by Bi or Mn atom, localized 3-fold symmetric features can be identified. Moreover, the non-trivial topological states stand for non-magnetic substituted Bi atom, while can be eliminated by adsorbed or substituted magnetic Mn atom.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Adsorption and diffusion of H2O molecule on the Be(0001) surface: A density-functional theory study

Using first-principles calculations, we systematically study the adsorption behavior of a single molecular H$_{2}$O on the Be(0001) surface. We find that the favored molecular adsorption site is the top site with an adsorption energy of about 0.3 eV, together with the detailed electronic structure analysis, suggesting a weak binding strength of the H$_{2}$O/Be(0001) surface. The adsorption interaction is mainly contributed by the overlapping between the $s$ and $p_{z}$ states of the top-layer Be atom and the molecular orbitals 1$b_{1}$ and 3$a_{1}$ of H$_{2}$O. The activation energy for H$_{2}$O diffusion on the surface is about 0.3 eV. Meanwhile, our study indicates that no dissociation state exists for the H$_{2}$O/Be(0001) surface.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Adsorption and dissociation of water on Zr(0001) with density-functional theory studies

The adsorption and dissociation of isolated water molecule on Zr(0001) surface are theoretically investigated for the first time by using density-functional theory calculations. Two kinds of adsorption configurations with almost the same adsorption energy are identified as the locally stable states, i.e., the flat and upright configurations respectively. It is shown that the flat adsorption states on the top site are dominated by the 1$b_{1}$-$d$ band coupling, insensitive to the azimuthal orientation. The diffusion between adjacent top sites reveals that the water molecule is very mobile on the surface. For the upright configuration, we find that besides the contribution of the molecular orbitals 1$b_{1}$ and 3$a_{1}$, the surface$\rightarrow$water charge transfer occurring across the Fermi level also plays an important role. The dissociation of H$_{2}$O is found to be very facile, especially for the upright configuration, in good accordance with the attainable experimental results. The present results afford to provide a guiding line for deeply understanding the water-induced surface corrosion of zirconium.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Aharonov-Bohm oscillations in the local density of topological surface states

We study Aharonov-Bohm (AB) oscillations in the local density of states (LDOS) for topological insulator (TI) and conventional metal Au(111) surfaces with spin-orbit interaction, which can be probed by spin-polarized scanning tunneling microscopy. We show that the spacial AB oscillatory period in the total LDOS is a flux quantum $Φ_{0}\mathtt{=}hc/e$ (weak localization) in both systems. Remarkably, an analogous weak antilocalization with $Φ_{0}/2$ periodic spacial AB oscillations in spin components of LDOS for TI surface is observed, while it is absent in Au(111).

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Large-deviation analysis for counting statistics in mesoscopic transports

We present an efficient approach, based on a number-conditioned master equation, for large-deviation analysis in mesoscopic transports. Beyond the conventional full-counting-statistics study, the large-deviation approach encodes complete information of both the typical trajectories and the rare ones, in terms of revealing a continuous change of the dynamical phase in trajectory space. The approach is illustrated with two examples: (i) transport through a single quantum dot, where we reveal the inhomogeneous distribution of trajectories in general case and find a particular scale invariance point in trajectory statistics; and (ii) transport through a double dots, where we find a dynamical phase transition between two distinct phases induced by the Coulomb correlation and quantum interference.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Multiple scattering theory of quasiparticles on a topological insulator surface

A general partial-wave multiple scattering theory for scattering from cylindrically symmetric potentials on a topological insulator (TI) surface is developed. As an application, the cross sections for a single scatterer and two scatterers are discussed. We find that the symmetry of differential cross section is reduced and the backscattering is allowed for massive Dirac fermions on gapped TI surface. Remarkably, a sharp resonance peak at the band edge of the gapped TI is found in the total cross section $Λ_{tot}$, which may offer a useful way to determine the gap (as well as the effective mass of quasiparticles) on TI surface. We show that the interference effect is obvious in cross sections during the quasiparticle scattering between the scatterer pair, and additional resonance peaks are introduced in $Λ_{tot}$ when the higher partial waves are taken into account.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

The Quantification of Quantum Nonlocality by Characteristic Function

Quantum nonlocal correlation (QNC) is thought to be more general than quantum entanglement correlation, but the strength of it has not been well defined. We propose a way to measure the strength of QNC basing on the characteristic function. The characteristic function of QNC in a composite system is defined as a response function under the local quantum measurement. It is explored that once a characteristic function is given, the state of a composite system, with just a local trace-preserving quantum operation uncertainty, will be determined. We show that the strength of QNC basing on the characteristic function is a half-positive-definite function and does not change under any LU operation. For a two-partite pure state, the strength of QNC is equivalent to the quantum entanglement. Generally, we give a new definition for quantum entanglement using the strength function. Furthermore, we also give a separability-criterion for 2\timesm-dimensional mixed real matrix. This letter proposes an alternate way for QNC further research.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Various correlations in a Heisenberg XXZ spin chain both in thermal equilibrium and under the intrinsic decoherence

In this paper we discuss various correlations measured by the concurrence (C), classical correlation (CC), quantum discord (QD), and geometric measure of discord (GMD) in a two-qubit Heisenberg XXZ spin chain in the presence of external magnetic field and Dzyaloshinskii-Moriya (DM) anisotropic antisymmetric interaction. Based on the analytically derived expressions for the correlations for the cases of thermal equilibrium and the inclusion of intrinsic decoherence, we discuss and compare the effects of various system parameters on the correlations in different cases. The results show that the anisotropy Jz is considerably crucial for the correlations in thermal equilibrium at zero temperature limit but ineffective under the consideration of the intrinsic decoherence, and these quantities decrease as temperature T rises on the whole. Besides, J turned out to be constructive, but B be detrimental in the manipulation and control of various quantities both in thermal equilibrium and under the intrinsic decoherence which can be avoided by tuning other system parameters, while D is constructive in thermal equilibrium, but destructive in the case of intrinsic decoherence in general. In addition, for the initial state $|Ψ_1(0) > = \frac{1}{\sqrt{2}} (|01 > + |10 >)$, all the correlations except the CC, exhibit a damping oscillation to a stable value larger than zero following the time, while for the initial state $|Ψ_2(0) > = \frac{1}{\sqrt{2}} (|00 > + |11 >)$, all the correlations monotonously decrease, but CC still remains maximum. Moreover, there is not a definite ordering of these quantities in thermal equilibrium, whereas there is a descending order of the CC, C, GMD and QD under the intrinsic decoherence with a nonnull B when the initial state is $|Ψ_2(0) >$.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO: first-principles calculations

The electronic structure and magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO have been investigated using first-principles methods. We show that the magnetic coupling between Gd or Nd ions in the nearest neighbor sites is ferromagnetic. The stability of the ferromagnetic coupling between Gd ions can be enhanced by appropriate electron doping into ZnO:Gd system and the room-temperature ferromagnetism can be achieved. However, for ZnO:Nd system, the ferromagnetism between Nd ions can be enhanced by appropriate holes doping into the sample. The room-temperature ferromagnetism can also be achieved in the \emph{n}-conducting ZnO:Nd sample. Our calculated results are in good agreement with the conclusions of the recent experiments. The effect of native defects (V$_{\rm{Zn}}$, V$_{\rm{O}}$) on the ferromagnetism is also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Optical properties of CeO2 using screened hybrid functional and GW+U methods

The optical spectra of CeO2 have been systematically investigated using three first-principles computational approaches for comparison, namely, the Heyd-Scuseria-Ernzerhof (HSE) screened hybrid functional, HSE+\emph{U}, and \emph{GW}+\emph{U}. Our results show that by using the HSE+\emph{U} method, the calculated electronic structures are in good agreement with experimental spectra and the resulting imaginary part of the optical dielectric function spectrum well reproduces the main features exhibited in experimental observations. The important adsorption spectrum and energy loss function also accord well with the experimental results.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Orbital magnetization of the electron gas on a two-dimensional kagome lattice under a perpendicular magnetic field

The orbital magnetization of the electron gas on a two-dimensional kagome lattice under a perpendicular magnetic field is theoretically investigated. The interplay between the lattice geometry and magnetic field induce nontrivial $k$-space Chern invariant in the magnetic Brillouin zone, which turns to result in profound effects on the magnetization properties. We show that the Berry-phase term in the magnetization gives a paramagnetic contribution, while the conventional term brought about by the magnetic response of the magnetic Bloch bands produces a diamagnetic contribution. As a result, the superposition of these two components gives rise to a delicate oscillatory structure in the magnetization curve when varying the electron filling factor. The relationship between this oscillatory behavior and the Hofstadter energy spectrum is revealed by selectively discussing the magnetization and its two components at the commensurate fluxes of $f$=1/4, 1/3, and 1/6, respectively. In particular, we reveal as a typical example the fractal structure in the magnetic oscillations by tuning the commensurate flux around $f$=1/4. The finite-temperature effect on the magnetization is also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Quantum Mechanical Simulation of Electronic Transport in Nanostructured Devices by Efficient Self-consistent Pseudopotential Calculation

We present a new empirical pseudopotential (EPM) calculation approach to simulate the million atom nanostructured semiconductor devices under potential bias using the periodic boundary conditions. To treat the non-equilibrium condition, instead of directly calculating the scattering states from the source and drain, we calculate the stationary states by the linear combination of bulk band method and then decompose the stationary wave function into source and drain injecting scattering states according to an approximated top of the barrier splitting (TBS) scheme based on physical insight of ballistic and tunneling transport. The decomposed electronic scattering states are then occupied according to the source/drain Fermi-Levels to yield the occupied electron density which is then used to solve the potential, forming a self-consistent loop. The TBS is tested in an one-dimensional effective mass model by comparing with the direct scattering state calculation results. It is also tested in a three-dimensional 22 nm double gate ultra-thin-body field-effect transistor study, by comparing the TBS-EPM result with the non-equilibrium Green's function tight-binding result. We expected the TBS scheme will work whenever the potential in the barrier region is smoother than the wave function oscillations and if it does not have local minimum, thus there is no multiple scattering as in a resonant tunneling diode, and when a three-dimensional problem can be represented as a quasi-one-dimensional problem, e.g., in a variable separation approximation. Using our approach, a million atom non-equilibrium nanostructure device can be simulated with EPM on a single processor computer.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Optimal teleportation via thermal entangled states of a two-qubit Heisenberg Chain

We study the optimal teleportation based on Bell measurements via the thermal states of a two-qubit Heisenberg XXX chain in the presence of Dzyaloshinsky-Moriya (DM) anisotropic antisymmetric interaction and obtain the optimal unitary transformation. The explicit expressions of the output state and the teleportation fidelity are presented and compared with those of the standard protocol. It is shown that in this protocol the teleportation fidelity is always larger and unit fidelity is achieved at zero temperature. The DM interaction can enhance the teleportation fidelity at finite temperatures, as opposed to the effect of the interaction in the standard protocol. Cases with other types of anisotropies are also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Loschmidt Echo and Berry phase of the quantum system coupled to the XY spin chain: Proximity to quantum phase transition

We study the Loschmidt echo (LE) of a coupled system consisting of a central spin and its surrounding environment described by a general XY spin-chain model. The quantum dynamics of the LE is shown to be remarkably influenced by the quantum criticality of the spin chain. In particular, the decaying behavior of the LE is found to be controlled by the anisotropy parameter of the spin chain. Furthermore, we show that due to the coupling to the spin chain, the ground-state Berry phase for the central spin becomes nonanalytical and its derivative with respect to the magnetic parameter $λ$ in spin chain diverges along the critical line $λ=1$, which suggests an alternative measurement of the quantum criticality of the spin chain.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Thermal entanglement in a two-spin-qutrit system under a nonuniform external magnetic field

The thermal entanglement in a two-spin-qutrit system with two spins coupled by exchange interaction under a magnetic field in an arbitrary direction is investigated. Negativity, the measurement of entanglement, is calculated. We find that for any temperature the evolvement of negativity is symmetric with respect to magnetic field. The behavior of negativity is presented for four different cases. The results show that for different temperature, different magnetic field give maximum entanglement. Both the parallel and antiparallel magnetic field cases are investigated qualitatively (not quantitatively) in detail, we find that the entanglement may be enhanced under an antiparallel magnetic field.

0 citations0 reviewsNo code linkedOpen access