BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Shu-Shen Li

Shu-Shen Li contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.comp-phquant-phcond-mat.dis-nncond-mat.str-elphysics.app-ph

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
18works
0followers
7topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

18 published item(s)

preprint2022arXiv

Algebraic structure of path-independent quantum control

Path-independent (PI) quantum control has recently been proposed to integrate quantum error correction and quantum control [Phys. Rev. Lett. 125, 110503 (2020)], achieving fault-tolerant quantum gates against ancilla errors. Here we reveal the underlying algebraic structure of PI quantum control. The PI Hamiltonians and propagators turn out to lie in an algebra isomorphic to the ordinary matrix algebra, which we call the PI matrix algebra. The PI matrix algebra, defined on the Hilbert space of a composite system (including an ancilla system and a central system), is isomorphic to the matrix algebra defined on the Hilbert space of the ancilla system. By extending the PI matrix algebra to the Hilbert-Schmidt space of the composite system, we provide an exact and unifying condition for PI quantum control against ancilla noise.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Transport through Quantum Anomalous Hall Bilayers with Lattice Mismatch

We theoretically investigate quantum transport properties of quantum anomalous Hall bilayers, with arbitrary ratio of lattice constants, i.e., with lattice mismatch. In the simplest case of ratio 1 (but with different model parameters in two layers), the inter-layer coupling results in resonant traversing between forward propagating waves in two layers. In the case of generic ratios, there is a quantized conductance plateau originated from two Chern numbers associated with two layers. However, the phase boundary of this quantization plateau consists of a fractal transitional region (instead of a clear transition line) of interpenetrating edge states (with quantized conductance) and bulk states (with unquantized conductance). We attribute these bulk states as mismatch induced in-gap bulk states. Different from in-gap localized states induced by random disorder, these in-gap bulk states are extended in the limit of vanishing random disorder. However, the detailed fine structure of this transitional region is sensitive to disorder, lattice structure, sample size, and even the configuration of leads connecting to it, due to the bulk and topologically trivial nature of these in-gap bulk states.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

An upper and lower bound to the orientation-dependent linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum wells

Our recent study [Phys. Rev. B 103, 085309 (2021)] verified the existence of $\bf{k}$-linear Rashba spin-orbit coupling (SOC) of two-dimensional hole gases in quantum wells (QWs) which originates from a combination of heavy-hole-light-hole (HH-LH) mixing and direct dipolar coupling to the external electric field. However, the Rashba SOC dependence on QW orientations remains unclear. Here, we explore this dependence on QW orientations and uncover an upper and lower bound to the orientation-dependent $\bf{k}$-linear Rashba SOC along the [110]- and [111]- crystalline directions by performing atomistic pseudopotential calculations associated with theoretical analysis. The intrinsic HH-LH mixing at the Brillouin zone center, maximal in [110]-oriented quantum wells and minimal in [111]- and [001]-oriented QWs, plays an essential role. Remarkably, we find that only $\bf{k}$-cubic Rashba SOC exists in [111]-oriented QWs. These findings help understand the physical mechanism of the Rashba SOC dependence on QW orientations and provide a strategic prediction for experiments to realize the large Rashba SOC.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dynamic short-range correlation in photoinduced disorder phase transitions

Ultrafast photoexcitation can induce a nonequilibrium dynamic with electron-lattice interaction, offering an effective way to study photoinduced phase transitions (PIPTs) in solids. The issue that atomic displacements after photoexcitation belong to coherent change or disordered process, has become a controversy in the PIPT community. Using real-time time-dependent density functional theory (rt-TDDFT) simulations, we obtain both the coherent and the disordered PIPTs (dimer dissociation) in IrTe2 with the different electronic occupations. More importantly, we found that in the disordered phase transition, there exists a local correlation between different dimers regarding their dissociation status. One can define vertical groups across the layers. The dimers in the same group will dissociate in a correlated fashion: they either all dissociate, or all not dissociate. On the other hand, the dimers in neighboring groups will have an anti-correlation: if the dimers in one group dissociate, the dimers in the neighboring group tend not to be dissociated, and vice versus.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Origin of giant valley splitting in silicon quantum wells induced by superlattice barriers

Enhancing valley splitting in SiGe heterostructures is a crucial task for developing silicon spin qubits. Complex SiGe heterostructures, sharing a common feature of four-monolayer (4ML) Ge layer next to the silicon quantum well (QW), have been computationally designed to have giant valley splitting approaching 9 meV. However, none of them has been fabricated may due to their complexity. Here, we remarkably simplify the original designed complex SiGe heterostructures by laying out the Si QW directly on the Ge substrate followed by capping a (Ge4Si4)n superlattice(SL) barrier with a small sacrifice on VS as it is reduced from a maximum of 8.7 meV to 5.2 meV. Even the smallest number of periods (n = 1) will also give a sizable VS of 1.6 meV, which is large enough for developing stable spin qubits. We also develop an effective Hamiltonian model to reveal the underlying microscopic physics of enhanced valley splitting by (Ge4Si4)n SL barriers. We find that the presence of the SL barrier will reduce the VS instead of enhancing it. Only the (Ge4Si4)n SL barriers with an extremely strong coupling with Si QW valley states provide a remarkable enhancement in VS. These findings lay a solid theoretical foundation for the realization of sufficiently large VS for Si qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

s-d coupling enhanced phonon anharmonicity in copper-based compounds

Materials with ultralow thermal conductivity are of great interest for efficient energy conversion and thermal barrier coating. Copper-based semiconductors such as copper chalcogenides and copper halides are known to possess extreme low thermal conductivity, whereas the fundamental origin of the low thermal conductivity observed in the copper-based materials remains elusive. Here, we reveal that s-d coupling induced giant phonon anharmonicity is the fundamental mechanism responsible for the ultralow thermal conductivity of copper compounds. The symmetry controlled strong coupling of high-lying occupied copper 3d orbital with the unoccupied 4s state under thermal vibration remarkably lowers the lattice potential barrier, which enhances anharmonic scattering between phonons. This understanding is confirmed by temperature-dependent Raman spectra measurements. Our study offers an insight at atomic level connecting electronic structures with phonon vibration modes, and thus sheds light on materials properties that rely on electron-phonon coupling, such as thermoelectricity and superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The emergent linear Rashba spin-orbit coupling offering the fast manipulation of hole-spin qubits in germanium

The electric dipole spin resonance (EDSR) combining strong spin-orbit coupling (SOC) and electric-dipole transitions facilitates fast spin control in a scalable way, which is the critical aspect of the rapid progress made recently in germanium (Ge) hole-spin qubits. However, a puzzle is raised because centrosymmetric Ge lacks the Dresselhaus SOC, a key element in the initial proposal of the hole-based EDSR. Here, we demonstrate that the recently uncovered finite k-linear Rashba SOC of 2D holes offers fast hole spin control via EDSR with Rabi frequencies in excellent agreement with experimental results over a wide range of driving fields. We also suggest that the Rabi frequency can reach 500 MHz under a higher gate electric field or multiple GHz in a replacement by [110]oriented wells. These findings bring a deeper understanding for hole-spin qubit manipulation and offer design principles to boost the gate speed.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The seeds and homogeneous nucleation of photoinduced nonthermal melting in semiconductors due to self-amplified local dynamic instability

Laser-induced nonthermal melting in semiconductors has been studied over the last four decades, but the underlying mechanism is still under debate. Here, by utilizing an advanced real-time time-dependent density functional theory simulation, we reveal that the photoexcitation-induced ultrafast nonthermal melting in silicon occurs via homogeneous nucleation with random seeds originating from a self-amplified local dynamic instability at the photoexcited states rather than by simultaneously breaking of all bonds, as suggested by the inertial model, phonon instability, or Coulombic repulsion mechanisms. Due to this local dynamic instability, any initial small random thermal displacements of atoms can be amplified by a charge transfer of photoexcited carriers, which in turn creates a local self-trapping center for the excited carriers and yields the random nucleation seeds. This finding provides fresh insights into photoinduced ultrafast nonthermal melting.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Uniting the order and disorder dynamics in photoexcited VO2

Photoinduced phase transition (PIPT) is always treated as a coherent process, but ultrafast disordering in PIPT is observed in recent experiments. Utilizing the real-time time-dependent density functional theory (rt-TDDFT) method, here, we track the motion of individual vanadium (V) ions during PIPT in VO2 and uncover that their coherent or disordered dynamics can be manipulated by tuning the laser fluence. We find that the photoexcited holes generate a force on each V-V dimer to drive their collective coherent motion, in competing with the thermal-induced vibrations. If the laser fluence is so weak that the photoexcited hole density is too low to drive the phase transition alone, the PIPT is a disordered process due to the interference of thermal phonons. We also reveal that the photoexcited holes populated by the V-V dimerized bonding states will become saturated if the laser fluence is too strong, limiting the timescale of photoinduced phase transition.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Chebyshev Polynomial Method to Landauer-Büttiker Formula of Quantum Transport in Nanostructures

Landauer-Büttiker formula describes the electronic quantum transports in nanostructures and molecules. It will be numerically demanding for simulations of complex or large size systems due to, for example, matrix inversion calculations. Recently, Chebyshev polynomial method has attracted intense interests in numerical simulations of quantum systems due to the high efficiency in parallelization, because the only matrix operation it involves is just the product of sparse matrices and vectors. Many progresses have been made on the Chebyshev polynomial representations of physical quantities for isolated or bulk quantum structures. Here we present the Chebyshev polynomial method to the typical electronic scattering problem, the Landauer-Büttiker formula for the conductance of quantum transports in nanostructures. We first describe the full algorithm based on the standard bath kernel polynomial method (KPM). Then, we present two simple butefficient improvements. One of them has a time consumption remarkably less than the direct matrix calculation without KPM. Some typical examples are also presented to illustrate the numerical effectiveness.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Emergence of an upper bound to the electric field controlled Rashba spin splitting in InAs nanowires

The experimental assessment of the strength ($α_R$) of the Rashba spin-orbit coupling is rather indirect and involves the measurement of the spin relaxation length from magnetotransport, together with a model of weak antilocalization. The analysis of the spin relaxation length in nanowires, however, clouds the experimental assessment of the $α_R$ and leads to the prevailing belief that it can be tuned freely with electric field--a central tenant of spintronics. Here, we report direct theory of $α_R$ leading to atomistic calculations of the spin band structure of InAs nanowires upon application of electric field-- a direct method that does not require a theory of spin relaxation. Surprisingly, we find an {\it upper bound} to the electric field tunable Rashba spin splitting and the ensuing $α_R$; for InAs nanowires, $α_R$ is pinned at about 170 meVÅ irrespective of the applied field strength. We find that this pinning is due to the quantum confined stark effect, that reduces continuously the nanowire band gap with applied electric field, leading eventually to band gap closure and a considerable increase in the density of free carriers. This results in turn in a strong screening that prevents the applied electric field inside the nanowire from increasing further beyond around 200 kV/cm for InAs nanowires. Therefore, further increase in the gate voltage will not increase $α_R$. This finding clarifies the physical trends to be expected in nanowire Rashba SOC and the roles played by the nano size and electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Emergence of the strong tunable linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum

Two-dimensional hole gases in semiconductor quantum wells are promising platforms for spintronics and quantum computation but suffer from the lack of the $\bf{k}$-linear term in the Rashba spin-orbit coupling (SOC), which is essential for spin manipulations without magnetism and commonly believed to be a $\bf{k}$-cubic term as the lowest order. Here, contrary to conventional wisdom, we uncover a strong and tunable $\bf{k}$-linear Rashba SOC in two-dimensional hole gases (2DHG) of semiconductor quantum wells by performing atomistic pseudopotential calculations combined with an effective Hamiltonian for a model system of Ge/Si quantum wells. Its maximal strength exceeds 120 meVÅ, comparable to the highest values reported in narrow bandgap III-V semiconductor 2D electron gases, which suffers from short spin lifetime due to the presence of nuclear spin. We also illustrate that this emergent $\bf{k}$-linear Rashba SOC is a first-order direct Rashba effect, originating from a combination of heavy-hole-light-hole mixing and direct dipolar intersubband coupling to the external electric field. These findings confirm Ge-based 2DHG to be an excellent platform towards large-scale quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Numerical Study of Disorder on the Orbital Magnetization in Two Dimensions

The modern theory of orbital magnetization (OM) was developed by using Wannier function method, which has a formalism similar with the Berry phase. In this manuscript, we perform a numerical study on the fate of the OM under disorder, by using this method on the Haldane model in two dimensions, which can be tuned between a normal insulator or a Chern insulator at half filling. The effects of increasing disorder on OM for both cases are simulated. Energy renormalization shifts are observed in the weak disorder regime and topologically trivial case, which was predicted by a self-consistent T-matrix approximation. Besides this, two other phenomena can be seen. One is the localization trend of the band orbital magnetization. The other is the remarkable contribution from topological chiral states arising from nonzero Chern number or large value of integrated Berry curvature. If the fermi energy is fixed at the gap center of the clean system, there is an enhancement of |M| at the intermediate disorder, for both cases of normal and Chern insulators, which can be attributed to the disorder induced topological metal state before localization.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

A realistic dimension-independent approach for charged defect calculations in semiconductors

First-principles calculations of charged defects have become a cornerstone of research in semiconductors and insulators by providing insights into their fundamental physical properties. But current standard approach using the so-called jellium model has encountered both conceptual ambiguity and computational difficulty, especially for low-dimensional semiconducting materials. In this Communication, we propose a physical, straightforward, and dimension-independent universal model to calculate the formation energies of charged defects in both three-dimensional (3D) bulk and low-dimensional semiconductors. Within this model, the ionized electrons or holes are placed on the realistic host band-edge states instead of the virtual jellium state, therefore, rendering it not only naturally keeps the supercell charge neutral, but also has clear physical meaning. This realistic model reproduces the same accuracy as the traditional jellium model for most of the 3D semiconducting materials, and remarkably, for the low-dimensional structures, it is able to cure the divergence caused by the artificial long-range electrostatic energy introduced in the jellium model, and hence gives meaningful formation energies of defects in charged state and transition energy levels of the corresponding defects. Our realistic method, therefore, will have significant impact for the study of defect physics in all low-dimensional systems including quantum dots, nanowires, surfaces, interfaces, and 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Anharmonic corrections to the multiphonon deep-level charge capture ab initio calculations for semiconductors

Nonradiative carrier recombination at semiconductor deep centers is of great importance to both fundamental physics and device engineering. In this letter, we provide a revised analysis of K. Huang's original nonradiative multi-phonon (NMP) theory with ab initio calculations. First, we identify at first-principle level that Huang's concise formula gives the same results as the matrix based formula, and Huang's high temperature formula provides an analytical expression for the coupling constant in Marcus theory. Secondly, the anharmonic effects are corrected by taking into account local phonon mode variation at different charge states of the defect. The corrected capture rates for defects in GaN and SiC agree well with experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO: first-principles calculations

The electronic structure and magnetic coupling properties of rare-earth metals (Gd, Nd) doped ZnO have been investigated using first-principles methods. We show that the magnetic coupling between Gd or Nd ions in the nearest neighbor sites is ferromagnetic. The stability of the ferromagnetic coupling between Gd ions can be enhanced by appropriate electron doping into ZnO:Gd system and the room-temperature ferromagnetism can be achieved. However, for ZnO:Nd system, the ferromagnetism between Nd ions can be enhanced by appropriate holes doping into the sample. The room-temperature ferromagnetism can also be achieved in the \emph{n}-conducting ZnO:Nd sample. Our calculated results are in good agreement with the conclusions of the recent experiments. The effect of native defects (V$_{\rm{Zn}}$, V$_{\rm{O}}$) on the ferromagnetism is also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Optical properties of CeO2 using screened hybrid functional and GW+U methods

The optical spectra of CeO2 have been systematically investigated using three first-principles computational approaches for comparison, namely, the Heyd-Scuseria-Ernzerhof (HSE) screened hybrid functional, HSE+\emph{U}, and \emph{GW}+\emph{U}. Our results show that by using the HSE+\emph{U} method, the calculated electronic structures are in good agreement with experimental spectra and the resulting imaginary part of the optical dielectric function spectrum well reproduces the main features exhibited in experimental observations. The important adsorption spectrum and energy loss function also accord well with the experimental results.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Orbital magnetization of the electron gas on a two-dimensional kagome lattice under a perpendicular magnetic field

The orbital magnetization of the electron gas on a two-dimensional kagome lattice under a perpendicular magnetic field is theoretically investigated. The interplay between the lattice geometry and magnetic field induce nontrivial $k$-space Chern invariant in the magnetic Brillouin zone, which turns to result in profound effects on the magnetization properties. We show that the Berry-phase term in the magnetization gives a paramagnetic contribution, while the conventional term brought about by the magnetic response of the magnetic Bloch bands produces a diamagnetic contribution. As a result, the superposition of these two components gives rise to a delicate oscillatory structure in the magnetization curve when varying the electron filling factor. The relationship between this oscillatory behavior and the Hofstadter energy spectrum is revealed by selectively discussing the magnetization and its two components at the commensurate fluxes of $f$=1/4, 1/3, and 1/6, respectively. In particular, we reveal as a typical example the fractal structure in the magnetic oscillations by tuning the commensurate flux around $f$=1/4. The finite-temperature effect on the magnetization is also discussed.

0 citations0 reviewsNo code linkedOpen access