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Researcher profile

Jun-Wei Luo

Jun-Wei Luo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallquant-phphysics.comp-phcond-mat.otherphysics.app-ph

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Published work

12 published item(s)

preprint2021arXiv

An upper and lower bound to the orientation-dependent linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum wells

Our recent study [Phys. Rev. B 103, 085309 (2021)] verified the existence of $\bf{k}$-linear Rashba spin-orbit coupling (SOC) of two-dimensional hole gases in quantum wells (QWs) which originates from a combination of heavy-hole-light-hole (HH-LH) mixing and direct dipolar coupling to the external electric field. However, the Rashba SOC dependence on QW orientations remains unclear. Here, we explore this dependence on QW orientations and uncover an upper and lower bound to the orientation-dependent $\bf{k}$-linear Rashba SOC along the [110]- and [111]- crystalline directions by performing atomistic pseudopotential calculations associated with theoretical analysis. The intrinsic HH-LH mixing at the Brillouin zone center, maximal in [110]-oriented quantum wells and minimal in [111]- and [001]-oriented QWs, plays an essential role. Remarkably, we find that only $\bf{k}$-cubic Rashba SOC exists in [111]-oriented QWs. These findings help understand the physical mechanism of the Rashba SOC dependence on QW orientations and provide a strategic prediction for experiments to realize the large Rashba SOC.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dynamic short-range correlation in photoinduced disorder phase transitions

Ultrafast photoexcitation can induce a nonequilibrium dynamic with electron-lattice interaction, offering an effective way to study photoinduced phase transitions (PIPTs) in solids. The issue that atomic displacements after photoexcitation belong to coherent change or disordered process, has become a controversy in the PIPT community. Using real-time time-dependent density functional theory (rt-TDDFT) simulations, we obtain both the coherent and the disordered PIPTs (dimer dissociation) in IrTe2 with the different electronic occupations. More importantly, we found that in the disordered phase transition, there exists a local correlation between different dimers regarding their dissociation status. One can define vertical groups across the layers. The dimers in the same group will dissociate in a correlated fashion: they either all dissociate, or all not dissociate. On the other hand, the dimers in neighboring groups will have an anti-correlation: if the dimers in one group dissociate, the dimers in the neighboring group tend not to be dissociated, and vice versus.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Origin of giant valley splitting in silicon quantum wells induced by superlattice barriers

Enhancing valley splitting in SiGe heterostructures is a crucial task for developing silicon spin qubits. Complex SiGe heterostructures, sharing a common feature of four-monolayer (4ML) Ge layer next to the silicon quantum well (QW), have been computationally designed to have giant valley splitting approaching 9 meV. However, none of them has been fabricated may due to their complexity. Here, we remarkably simplify the original designed complex SiGe heterostructures by laying out the Si QW directly on the Ge substrate followed by capping a (Ge4Si4)n superlattice(SL) barrier with a small sacrifice on VS as it is reduced from a maximum of 8.7 meV to 5.2 meV. Even the smallest number of periods (n = 1) will also give a sizable VS of 1.6 meV, which is large enough for developing stable spin qubits. We also develop an effective Hamiltonian model to reveal the underlying microscopic physics of enhanced valley splitting by (Ge4Si4)n SL barriers. We find that the presence of the SL barrier will reduce the VS instead of enhancing it. Only the (Ge4Si4)n SL barriers with an extremely strong coupling with Si QW valley states provide a remarkable enhancement in VS. These findings lay a solid theoretical foundation for the realization of sufficiently large VS for Si qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

s-d coupling enhanced phonon anharmonicity in copper-based compounds

Materials with ultralow thermal conductivity are of great interest for efficient energy conversion and thermal barrier coating. Copper-based semiconductors such as copper chalcogenides and copper halides are known to possess extreme low thermal conductivity, whereas the fundamental origin of the low thermal conductivity observed in the copper-based materials remains elusive. Here, we reveal that s-d coupling induced giant phonon anharmonicity is the fundamental mechanism responsible for the ultralow thermal conductivity of copper compounds. The symmetry controlled strong coupling of high-lying occupied copper 3d orbital with the unoccupied 4s state under thermal vibration remarkably lowers the lattice potential barrier, which enhances anharmonic scattering between phonons. This understanding is confirmed by temperature-dependent Raman spectra measurements. Our study offers an insight at atomic level connecting electronic structures with phonon vibration modes, and thus sheds light on materials properties that rely on electron-phonon coupling, such as thermoelectricity and superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The emergent linear Rashba spin-orbit coupling offering the fast manipulation of hole-spin qubits in germanium

The electric dipole spin resonance (EDSR) combining strong spin-orbit coupling (SOC) and electric-dipole transitions facilitates fast spin control in a scalable way, which is the critical aspect of the rapid progress made recently in germanium (Ge) hole-spin qubits. However, a puzzle is raised because centrosymmetric Ge lacks the Dresselhaus SOC, a key element in the initial proposal of the hole-based EDSR. Here, we demonstrate that the recently uncovered finite k-linear Rashba SOC of 2D holes offers fast hole spin control via EDSR with Rabi frequencies in excellent agreement with experimental results over a wide range of driving fields. We also suggest that the Rabi frequency can reach 500 MHz under a higher gate electric field or multiple GHz in a replacement by [110]oriented wells. These findings bring a deeper understanding for hole-spin qubit manipulation and offer design principles to boost the gate speed.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Uniting the order and disorder dynamics in photoexcited VO2

Photoinduced phase transition (PIPT) is always treated as a coherent process, but ultrafast disordering in PIPT is observed in recent experiments. Utilizing the real-time time-dependent density functional theory (rt-TDDFT) method, here, we track the motion of individual vanadium (V) ions during PIPT in VO2 and uncover that their coherent or disordered dynamics can be manipulated by tuning the laser fluence. We find that the photoexcited holes generate a force on each V-V dimer to drive their collective coherent motion, in competing with the thermal-induced vibrations. If the laser fluence is so weak that the photoexcited hole density is too low to drive the phase transition alone, the PIPT is a disordered process due to the interference of thermal phonons. We also reveal that the photoexcited holes populated by the V-V dimerized bonding states will become saturated if the laser fluence is too strong, limiting the timescale of photoinduced phase transition.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Emergence of an upper bound to the electric field controlled Rashba spin splitting in InAs nanowires

The experimental assessment of the strength ($α_R$) of the Rashba spin-orbit coupling is rather indirect and involves the measurement of the spin relaxation length from magnetotransport, together with a model of weak antilocalization. The analysis of the spin relaxation length in nanowires, however, clouds the experimental assessment of the $α_R$ and leads to the prevailing belief that it can be tuned freely with electric field--a central tenant of spintronics. Here, we report direct theory of $α_R$ leading to atomistic calculations of the spin band structure of InAs nanowires upon application of electric field-- a direct method that does not require a theory of spin relaxation. Surprisingly, we find an {\it upper bound} to the electric field tunable Rashba spin splitting and the ensuing $α_R$; for InAs nanowires, $α_R$ is pinned at about 170 meVÅ irrespective of the applied field strength. We find that this pinning is due to the quantum confined stark effect, that reduces continuously the nanowire band gap with applied electric field, leading eventually to band gap closure and a considerable increase in the density of free carriers. This results in turn in a strong screening that prevents the applied electric field inside the nanowire from increasing further beyond around 200 kV/cm for InAs nanowires. Therefore, further increase in the gate voltage will not increase $α_R$. This finding clarifies the physical trends to be expected in nanowire Rashba SOC and the roles played by the nano size and electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Emergence of the strong tunable linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum

Two-dimensional hole gases in semiconductor quantum wells are promising platforms for spintronics and quantum computation but suffer from the lack of the $\bf{k}$-linear term in the Rashba spin-orbit coupling (SOC), which is essential for spin manipulations without magnetism and commonly believed to be a $\bf{k}$-cubic term as the lowest order. Here, contrary to conventional wisdom, we uncover a strong and tunable $\bf{k}$-linear Rashba SOC in two-dimensional hole gases (2DHG) of semiconductor quantum wells by performing atomistic pseudopotential calculations combined with an effective Hamiltonian for a model system of Ge/Si quantum wells. Its maximal strength exceeds 120 meVÅ, comparable to the highest values reported in narrow bandgap III-V semiconductor 2D electron gases, which suffers from short spin lifetime due to the presence of nuclear spin. We also illustrate that this emergent $\bf{k}$-linear Rashba SOC is a first-order direct Rashba effect, originating from a combination of heavy-hole-light-hole mixing and direct dipolar intersubband coupling to the external electric field. These findings confirm Ge-based 2DHG to be an excellent platform towards large-scale quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant momentum-dependent spin splitting in centrosymmetric low Z antiferromagnets

The energy vs. crystal momentum E(k) diagram for a solid (band structure) constitutes the road map for navigating its optical, magnetic, and transport properties. By selecting crystals with specific atom types, composition and symmetries, one could design a target band structure and thus desired properties. A particularly attractive outcome would be to design energy bands that are split into spin components with a momentum-dependent splitting, as envisioned by Pekar and Rashba [Zh. Eksperim. i Teor. Fiz. 47 (1964)], enabling spintronic application. The current paper provides "design principles" for wavevector dependent spin splitting (SS) of energy bands that parallels the traditional Dresselhaus and Rashba spin-orbit coupling (SOC) - induce splitting, but originates from a fundamentally different source -- antiferromagnetism. We identify a few generic AFM prototypes with distinct SS patterns using magnetic symmetry design principles. These tools allow also the identification of specific AFM compounds with SS belonging to different prototypes. A specific compound -- centrosymmetric tetragonal MnF2 -- is used via density functional band structure calculations to quantitatively illustrate one type of AFM SS. Unlike the traditional SOC-induced effects restricted to non-centrosymmetric crystals, we show that antiferromagnetic-induced spin splitting broadens the playing field to include even centrosymmetric compounds, and gives SS comparable in magnitude to the best known ('giant') SOC effects, even without SOC, and consequently does not rely on the often-unstable high atomic number elements required for high SOC. We envision that use of the current design principles to identify an optimal antiferromagnet with spin-split energy bands would be beneficial for efficient spin-charge conversion and spin orbit torque applications without the burden of requiring compounds containing heavy elements.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Prediction of low-Z collinear and noncollinear antiferromagnetic compounds having momentum-dependent spin splitting even without spin-orbit coupling

Recent study (Yuan et. al., Phys. Rev. B 102, 014422 (2020)) revealed a SOC-independent spin splitting and spin polarization effect induced by antiferromagnetic ordering which do not necessarily require breaking of inversion symmetry or the presence of SOC, hence can exist even in centrosymmetric, low-Z light element compounds, considerably broadening the material base for spin polarization. In the present work we develop the magnetic symmetry conditions enabling such effect, dividing the 1651 magnetic space groups into 7 different spin splitting prototypes (SST-1 to SST-7). We use the 'Inverse Design' approach of first formulating the target property (here, spin splitting in low-Z compounds not restricted to low symmetry structures), then derive the enabling physical design principles to search realizable compounds that satisfy these a priori design principles. This process uncovers 422 magnetic space groups (160 centrosymmetric and 262 non-centrosymmetric) that could hold AFM-induced, SOC-independent spin splitting and spin polarization. We then search for stable compounds following such enabling symmetries. We investigate the electronic and spin structures of some selected prototype compounds by density functional theory (DFT) and find spin textures that are different than the traditional Rashba-Dresselhaus patterns. We provide the DFT results for all antiferromagnetic spin splitting prototypes (SST-1 to SST-4) and concentrate on revealing of the AFM-induced spin splitting prototype (SST-4). The symmetry design principles along with their transformation into an Inverse Design material search approach and DFT verification could open the way to their experimental examination.M). The symmetry design principles along with their transformation into an Inverse Design material search approach and DFT verification could open the way to their experimental examination.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

A realistic dimension-independent approach for charged defect calculations in semiconductors

First-principles calculations of charged defects have become a cornerstone of research in semiconductors and insulators by providing insights into their fundamental physical properties. But current standard approach using the so-called jellium model has encountered both conceptual ambiguity and computational difficulty, especially for low-dimensional semiconducting materials. In this Communication, we propose a physical, straightforward, and dimension-independent universal model to calculate the formation energies of charged defects in both three-dimensional (3D) bulk and low-dimensional semiconductors. Within this model, the ionized electrons or holes are placed on the realistic host band-edge states instead of the virtual jellium state, therefore, rendering it not only naturally keeps the supercell charge neutral, but also has clear physical meaning. This realistic model reproduces the same accuracy as the traditional jellium model for most of the 3D semiconducting materials, and remarkably, for the low-dimensional structures, it is able to cure the divergence caused by the artificial long-range electrostatic energy introduced in the jellium model, and hence gives meaningful formation energies of defects in charged state and transition energy levels of the corresponding defects. Our realistic method, therefore, will have significant impact for the study of defect physics in all low-dimensional systems including quantum dots, nanowires, surfaces, interfaces, and 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Prediction of large linear-in-k spin splitting for holes in the 2D GaAs/AlAs system

The spin-orbit interaction generally leads to spin splitting (SS) of electron and hole energy states in solids, a splitting that is characterized by a scaling with the wavevector $\bf k$. Whereas for {\it 3D bulk zincblende} solids the electron (heavy hole) SS exhibits a cubic (linear) scaling with $k$, in {\it 2D quantum-wells} the electron (heavy hole) SS is currently believed to have a mostly linear (cubic) scaling. Such expectations are based on using a small 3D envelope function basis set to describe 2D physics. By treating instead the 2D system explicitly in a multi-band many-body approach we discover a large linear scaling of hole states in 2D. This scaling emerges from hole bands coupling that would be unsuspected by the standard model that judges coupling by energy proximity. This discovery of a linear Dresselhaus k-scaling for holes in 2D implies a different understanding of hole-physics in low-dimensions.

0 citations0 reviewsNo code linkedOpen access