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Yan-Yang Zhang

Yan-Yang Zhang contributes to research discovery and scholarly infrastructure.

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Published work

11 published item(s)

preprint2022arXiv

Effects of Boundary on Orbital Magnetization for a Bilayer System with Different Chern Numbers

The real space formalism of orbital magnetization (OM) is an average of the local OM over some appropriate region of the system. Previous studies prefer a bulk average (i.e., without including boundaries). Based on a bilayer model with an adjustable Chern number at half filling, we numerically investigate the effects from boundaries on the real space expressions of OM. The size convergence processes of its three constituent terms $M_{\mathrm{LC}}$, $M_{\mathrm{IC}}$, $M_{\mathrm{BC}}$ are analysed. The topological term $M_{\mathrm{BC}}$ makes a nonnegligible contribution from boundaries as a manifestation of edge states, especially in the case of nonzero Chern numbers. However, we show that the influence of the boundary on $M_{\mathrm{LC}}$ and $M_{\mathrm{IC}}$ exactly compensates that on $M_{\mathrm{BC}}$. This compensation effect leads to the conclusion that the whole sample average is also a correct algorithm in the thermodynamic limit, which gives the same value as those from the bulk average and the $k$ space formula. This clarification will be beneficial to further studies on orbitronics, as well as the orbital magnetoelectric effects in higher dimensions.

preprint2022arXiv

Lyapunov exponent, mobility edges, and critical region in the generalized Aubry-Andre model with an unbounded quasiperiodic potential

In this work, we investigate the Anderson localization problems of the generalized Aubry-André model (Ganeshan-Pixley-Das Sarma&#39;s model) with an unbounded quasi-periodic potential where the parameter $|α|\geq1$. The Lyapunov exponent $γ(E)$ and the mobility edges $E_c$ are exactly obtained for the unbounded quasi-periodic potential. With the Lyapunov exponent, we find that there exists a critical region in the parameter $λ-E$ plane. The critical region consists of critical states. In comparison with localized and extended states, the fluctuation of spatial extensions of the critical states is much larger. The numerical results show that the scaling exponent of inverse participation ratio (IPR) of critical states $x\simeq0.5$. Furthermore, it is found that the critical indices of localized length $ν=1$ for bounded ($|α|<1$) case and $ν=1/2$ for unbounded ($|α|\geq1$) case. The above distinct critical indices can be used to distinguish the localized-extended from localized-critical transitions. At the end, we show that the systems with different $E$ for both cases of $|α|<1$ and $|α|\geq1$ can be classified by the Lyapunov exponent $γ(E)$ and Avila&#39;s quantized acceleration $ω(E)$.

preprint2022arXiv

Transport through Quantum Anomalous Hall Bilayers with Lattice Mismatch

We theoretically investigate quantum transport properties of quantum anomalous Hall bilayers, with arbitrary ratio of lattice constants, i.e., with lattice mismatch. In the simplest case of ratio 1 (but with different model parameters in two layers), the inter-layer coupling results in resonant traversing between forward propagating waves in two layers. In the case of generic ratios, there is a quantized conductance plateau originated from two Chern numbers associated with two layers. However, the phase boundary of this quantization plateau consists of a fractal transitional region (instead of a clear transition line) of interpenetrating edge states (with quantized conductance) and bulk states (with unquantized conductance). We attribute these bulk states as mismatch induced in-gap bulk states. Different from in-gap localized states induced by random disorder, these in-gap bulk states are extended in the limit of vanishing random disorder. However, the detailed fine structure of this transitional region is sensitive to disorder, lattice structure, sample size, and even the configuration of leads connecting to it, due to the bulk and topologically trivial nature of these in-gap bulk states.

preprint2020arXiv

Chebyshev Polynomial Method to Landauer-Büttiker Formula of Quantum Transport in Nanostructures

Landauer-Büttiker formula describes the electronic quantum transports in nanostructures and molecules. It will be numerically demanding for simulations of complex or large size systems due to, for example, matrix inversion calculations. Recently, Chebyshev polynomial method has attracted intense interests in numerical simulations of quantum systems due to the high efficiency in parallelization, because the only matrix operation it involves is just the product of sparse matrices and vectors. Many progresses have been made on the Chebyshev polynomial representations of physical quantities for isolated or bulk quantum structures. Here we present the Chebyshev polynomial method to the typical electronic scattering problem, the Landauer-Büttiker formula for the conductance of quantum transports in nanostructures. We first describe the full algorithm based on the standard bath kernel polynomial method (KPM). Then, we present two simple butefficient improvements. One of them has a time consumption remarkably less than the direct matrix calculation without KPM. Some typical examples are also presented to illustrate the numerical effectiveness.

preprint2020arXiv

Numerical Study of Disorder on the Orbital Magnetization in Two Dimensions

The modern theory of orbital magnetization (OM) was developed by using Wannier function method, which has a formalism similar with the Berry phase. In this manuscript, we perform a numerical study on the fate of the OM under disorder, by using this method on the Haldane model in two dimensions, which can be tuned between a normal insulator or a Chern insulator at half filling. The effects of increasing disorder on OM for both cases are simulated. Energy renormalization shifts are observed in the weak disorder regime and topologically trivial case, which was predicted by a self-consistent T-matrix approximation. Besides this, two other phenomena can be seen. One is the localization trend of the band orbital magnetization. The other is the remarkable contribution from topological chiral states arising from nonzero Chern number or large value of integrated Berry curvature. If the fermi energy is fixed at the gap center of the clean system, there is an enhancement of |M| at the intermediate disorder, for both cases of normal and Chern insulators, which can be attributed to the disorder induced topological metal state before localization.

preprint2013arXiv

Algebraic and Geometric Mean Density of States in Topological Anderson Insulators

Algebraic and geometric mean density of states in disordered systems may reveal properties of electronic localization. In order to understand the topological phases with disorder in two dimensions, we present the calculated density of states for disordered Bernevig-Hughes-Zhang model. The topological phase is characterized by a perfectly quantized conducting plateau, carried by helical edge states, in a two-terminal setup. In the presence of disorder, the bulk of the topological phase is either a band insulator or an Anderson insulator. Both of them can protect edge states from backscattering. The topological phases are explicitly distinguished as topological band insulator or topological Anderson insulator from the ratio of the algebraic mean density of states to the geometric mean density of states. The calculation reveals that topological Anderson insulator can be induced by disorders from either a topologically trivial band insulator or a topologically nontrivial band insulator.

preprint2013arXiv

Electron Delocalization in Gate-Tunable Gapless Silicene

The application of a perpendicular electric field can drive silicene into a gapless state, characterized by two nearly fully spin-polarized Dirac cones owing to both relatively large spin-orbital interactions and inversion symmetry breaking. Here we argue that since inter-valley scattering from non-magnetic impurities is highly suppressed by time reversal symmetry, the physics should be effectively single-Dirac-cone like. Through numerical calculations, we demonstrate that there is no significant backscattering from a single impurity that is non-magnetic and unit-cell uniform, indicating a stable delocalized state. This conjecture is then further confirmed from a scaling of conductance for disordered systems using the same type of impurities.

preprint2012arXiv

Pure spin current in a two-dimensional topological insulator

We predict a mechanism to generate a pure spin current in a two-dimensional topological insulator. As the magnetic impurities exist on one of edges of the two-dimensional topological insulator, a gap is opened in the corresponding gapless edge states but another pair of gapless edge states with opposite spin are still protected by the time-reversal symmetry. So the conductance plateaus with the half-integer values $e^2/h$ can be obtained in the gap induced by magnetic impurities, which means that the pure spin current can be induced in the sample. We also find that the pure spin current is insensitive to weak disorder. The mechanism to generate pure spin currents is generalized for two-dimensional topological insulators.

preprint2012arXiv

Quantum spin Hall effect induced by electric field in silicene

We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by tuning the two kinds of Rashba spin-orbit couplings properly. Furthermore, the gapless edge states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that the quantum spin Hall effect can be induced by an external electric field in silicene, which may have certain practical significance in applications for future spintronics device.

preprint2012arXiv

Spin-polarized current induced by a local exchange field in a silicene nanoribbon

A mechanism to generate a spin-polarized current in a two-terminal zigzag silicene nanoribbon is predicted. As a weak local exchange field that is parallel to the surface of silicene is applied on one of edges of the silicene nanoribbon, a gap is opened in the corresponding gapless edge states but another pair of gapless edge states with opposite spin are still protected by the time-reversal symmetry. Hence, a spin-polarized current can be induced in the gap opened by the local exchange field in this two-terminal system. What is important is that the spin-polarized current can be obtained even in the absence of Rashba spin-orbit coupling and in the case of the very weak exchange filed. That is to say, the mechanism to generate the spin-polarized currents can be easily realized experimentally.We also find that the spin-polarized current is insensitive to weak disorder.

preprint2011arXiv

Three-Dimensional Topological Insulator in a Magnetic Field: Chiral Side Surface States and Quantized Hall Conductance

Low energy excitation of surface states of a three-dimensional topological insulator (3DTI) can be described by Dirac fermions. By using a tight-binding model, the transport properties of the surface states in a uniform magnetic field is investigated. It is found that chiral surface states parallel to the magnetic field are responsible to the quantized Hall (QH) conductance $(2n+1)\frac{e^2}{h}$ multiplied by the number of Dirac cones. Due to the two-dimension (2D) nature of the surface states, the robustness of the QH conductance against impurity scattering is determined by the oddness and evenness of the Dirac cone number. An experimental setup for transport measurement is proposed.