Source author record

Yan-Yang Zhang

Yan-Yang Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

20works
6topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

20 published item(s)

preprint2022arXiv

Effects of Boundary on Orbital Magnetization for a Bilayer System with Different Chern Numbers

The real space formalism of orbital magnetization (OM) is an average of the local OM over some appropriate region of the system. Previous studies prefer a bulk average (i.e., without including boundaries). Based on a bilayer model with an adjustable Chern number at half filling, we numerically investigate the effects from boundaries on the real space expressions of OM. The size convergence processes of its three constituent terms $M_{\mathrm{LC}}$, $M_{\mathrm{IC}}$, $M_{\mathrm{BC}}$ are analysed. The topological term $M_{\mathrm{BC}}$ makes a nonnegligible contribution from boundaries as a manifestation of edge states, especially in the case of nonzero Chern numbers. However, we show that the influence of the boundary on $M_{\mathrm{LC}}$ and $M_{\mathrm{IC}}$ exactly compensates that on $M_{\mathrm{BC}}$. This compensation effect leads to the conclusion that the whole sample average is also a correct algorithm in the thermodynamic limit, which gives the same value as those from the bulk average and the $k$ space formula. This clarification will be beneficial to further studies on orbitronics, as well as the orbital magnetoelectric effects in higher dimensions.

preprint2022arXiv

Lyapunov exponent, mobility edges, and critical region in the generalized Aubry-Andre model with an unbounded quasiperiodic potential

In this work, we investigate the Anderson localization problems of the generalized Aubry-André model (Ganeshan-Pixley-Das Sarma's model) with an unbounded quasi-periodic potential where the parameter $|α|\geq1$. The Lyapunov exponent $γ(E)$ and the mobility edges $E_c$ are exactly obtained for the unbounded quasi-periodic potential. With the Lyapunov exponent, we find that there exists a critical region in the parameter $λ-E$ plane. The critical region consists of critical states. In comparison with localized and extended states, the fluctuation of spatial extensions of the critical states is much larger. The numerical results show that the scaling exponent of inverse participation ratio (IPR) of critical states $x\simeq0.5$. Furthermore, it is found that the critical indices of localized length $ν=1$ for bounded ($|α|<1$) case and $ν=1/2$ for unbounded ($|α|\geq1$) case. The above distinct critical indices can be used to distinguish the localized-extended from localized-critical transitions. At the end, we show that the systems with different $E$ for both cases of $|α|<1$ and $|α|\geq1$ can be classified by the Lyapunov exponent $γ(E)$ and Avila's quantized acceleration $ω(E)$.

preprint2022arXiv

Transport through Quantum Anomalous Hall Bilayers with Lattice Mismatch

We theoretically investigate quantum transport properties of quantum anomalous Hall bilayers, with arbitrary ratio of lattice constants, i.e., with lattice mismatch. In the simplest case of ratio 1 (but with different model parameters in two layers), the inter-layer coupling results in resonant traversing between forward propagating waves in two layers. In the case of generic ratios, there is a quantized conductance plateau originated from two Chern numbers associated with two layers. However, the phase boundary of this quantization plateau consists of a fractal transitional region (instead of a clear transition line) of interpenetrating edge states (with quantized conductance) and bulk states (with unquantized conductance). We attribute these bulk states as mismatch induced in-gap bulk states. Different from in-gap localized states induced by random disorder, these in-gap bulk states are extended in the limit of vanishing random disorder. However, the detailed fine structure of this transitional region is sensitive to disorder, lattice structure, sample size, and even the configuration of leads connecting to it, due to the bulk and topologically trivial nature of these in-gap bulk states.

preprint2020arXiv

Chebyshev Polynomial Method to Landauer-Büttiker Formula of Quantum Transport in Nanostructures

Landauer-Büttiker formula describes the electronic quantum transports in nanostructures and molecules. It will be numerically demanding for simulations of complex or large size systems due to, for example, matrix inversion calculations. Recently, Chebyshev polynomial method has attracted intense interests in numerical simulations of quantum systems due to the high efficiency in parallelization, because the only matrix operation it involves is just the product of sparse matrices and vectors. Many progresses have been made on the Chebyshev polynomial representations of physical quantities for isolated or bulk quantum structures. Here we present the Chebyshev polynomial method to the typical electronic scattering problem, the Landauer-Büttiker formula for the conductance of quantum transports in nanostructures. We first describe the full algorithm based on the standard bath kernel polynomial method (KPM). Then, we present two simple butefficient improvements. One of them has a time consumption remarkably less than the direct matrix calculation without KPM. Some typical examples are also presented to illustrate the numerical effectiveness.

preprint2020arXiv

Numerical Study of Disorder on the Orbital Magnetization in Two Dimensions

The modern theory of orbital magnetization (OM) was developed by using Wannier function method, which has a formalism similar with the Berry phase. In this manuscript, we perform a numerical study on the fate of the OM under disorder, by using this method on the Haldane model in two dimensions, which can be tuned between a normal insulator or a Chern insulator at half filling. The effects of increasing disorder on OM for both cases are simulated. Energy renormalization shifts are observed in the weak disorder regime and topologically trivial case, which was predicted by a self-consistent T-matrix approximation. Besides this, two other phenomena can be seen. One is the localization trend of the band orbital magnetization. The other is the remarkable contribution from topological chiral states arising from nonzero Chern number or large value of integrated Berry curvature. If the fermi energy is fixed at the gap center of the clean system, there is an enhancement of |M| at the intermediate disorder, for both cases of normal and Chern insulators, which can be attributed to the disorder induced topological metal state before localization.

preprint2016arXiv

Resonant impurities states-driven topological transition in quantum well

We demonstrate theoretically that a new system quantum well can realize the topological transition based on the 16-band kp model. Utilizing the strain introduced by the doped impurities, the band anti crossing induced by the doped nitrogen and valence band anti crossing induced by the doped bismuth, the band gap of the quantum well is rapidly decreased and even becomes negative. As a result, the topological transitions arise. Furthermore, the band gap as a function of the concentration of nitrogen and bismuth is calculated, where the negative gap corresponds to the topological phase. Noting the cancel of strain resulting from the combination of tensile strain introduced by N and strain introduced by Bi, we can easily tune the ratio of the N and Bi to meet the requirement of strain in the crystal growth procedure. Our proposal provides a promising approach for topological insulator in traditional semiconductor system utilizing the semiconductor fabrication technologies.

preprint2016arXiv

Spin-filtered and Spatially Distinguishable Crossed Andreev Reflection in a Silicene-Superconductor Junction

We theoretically investigate the quantum transports in a junction between a superconductor and a silicene nanoribbon, under the effect of a magnetic exchange field. We find that for a narrow nanoribbon of silicene, remarkable crossed Andreev reflection (with a fraction $>50\%$) can be induced in the energy window of the elastic cotunneling, by destroying some symmetries of the system. Since the energy responses of electrons to the exchange field are opposite for opposite spins, these transport channels can be well spin polarized. Moreover, due to the helicity conservation of the topological edge states, these three transport channels are spatially separated in three different locations of the device, making them experimentally distinguishable. This crossed Andreev reflection is a nonlocal quantum interference between opposite edges through evanescent modes. If two superconducting leads with different phases are connected to two edges of the silicene nanoribbon, the crossed Andreev reflection can present Josephson type oscillations, with a maximal fraction $\sim 100\%$.

preprint2015arXiv

Route towards Localization for Quantum Anomalous Hall Systems with Chern Number 2

The quantum anomalous Hall system with Chern number 2 can be destroyed by sufficiently strong disorder. During its process towards localization, it was found that the electronic states will be directly localized to an Anderson insulator (with Chern number 0), without an intermediate Hall plateau with Chern number 1. Here we investigate the topological origin of this phenomenon, by calculating the band structures and Chern numbers for disordered supercells. We find that on the route towards localization, there exists a hidden state with Chern number 1, but it is too short and too fluctuating to be practically observable. This intermediate state cannot be stabilized even after some "smart design" of the model and this should be a universal phenomena for insulators with high Chern numbers. By performing numerical scaling of conductances, we also plot the renormalization group flows for this transition, with Chern number 1 state as an unstable fixed point. This is distinct from known results, and can be tested by experiments and further theoretical analysis.

preprint2014arXiv

Robustness of Quantum Spin Hall Effect in an External Magnetic Field

The edge states in the quantum spin Hall effect are expected to be protected by time reversal symmetry. The experimental observation of the quantized conductance was reported in the InAs/GaSb quantum well {[}Du et al, arXiv:1306.1925{]}, up to a large magnetic field, which raises a question on the robustness of the edge states in the quantum spin Hall effect under time reversal symmetry breaking. Here we present a theoretical calculation on topological invariants for the Benevig-Hughes-Zhang model in an external magnetic field, and find that the quantum spin Hall effect retains robust up to a large magnetic field. The critical value of the magnetic field breaking the quantum spin Hall effect is dominantly determined by the band gap at the $Γ$ point instead of the indirect band gap between the conduction and valence bands. This illustrates that the quantum spin Hall effect could persist even under time reversal symmetry breaking.

preprint2014arXiv

Valley polarization in graphene-silicene-graphene heterojunction

Considering the difference of energy bands in graphene and silicene, we put forward a new model of the graphene-silicene-graphene (GSG) heterojunction. In the GSG, we study the valley polarization properties in a zigzag nanoribbon in the presence of an external electric field. We find the energy range associated with the bulk gap of silicene has a valley polarization more than 95%. Under the protection of the topological edge states of the silicene, the valley polarization remains even the small non-magnetic disorder is introduced. These results have certain practical significance in applications for future valley valve.

preprint2013arXiv

Algebraic and Geometric Mean Density of States in Topological Anderson Insulators

Algebraic and geometric mean density of states in disordered systems may reveal properties of electronic localization. In order to understand the topological phases with disorder in two dimensions, we present the calculated density of states for disordered Bernevig-Hughes-Zhang model. The topological phase is characterized by a perfectly quantized conducting plateau, carried by helical edge states, in a two-terminal setup. In the presence of disorder, the bulk of the topological phase is either a band insulator or an Anderson insulator. Both of them can protect edge states from backscattering. The topological phases are explicitly distinguished as topological band insulator or topological Anderson insulator from the ratio of the algebraic mean density of states to the geometric mean density of states. The calculation reveals that topological Anderson insulator can be induced by disorders from either a topologically trivial band insulator or a topologically nontrivial band insulator.

preprint2013arXiv

Electron Delocalization in Gate-Tunable Gapless Silicene

The application of a perpendicular electric field can drive silicene into a gapless state, characterized by two nearly fully spin-polarized Dirac cones owing to both relatively large spin-orbital interactions and inversion symmetry breaking. Here we argue that since inter-valley scattering from non-magnetic impurities is highly suppressed by time reversal symmetry, the physics should be effectively single-Dirac-cone like. Through numerical calculations, we demonstrate that there is no significant backscattering from a single impurity that is non-magnetic and unit-cell uniform, indicating a stable delocalized state. This conjecture is then further confirmed from a scaling of conductance for disordered systems using the same type of impurities.

preprint2013arXiv

Interplay between edge and bulk states in silicene nanoribbon

We investigate the interplay between the edge and bulk states, induced by the Rashba spin-orbit coupling, in a zigzag silicene nanoribbon in the presence of an external electric field. The interplay can be divided into two kinds, one is the interplay between the edge and bulk states with opposite velocities, and the other is that with the same velocity direction. The former can open small direct spin-dependent subgaps. A spin-polarized current can be generated in the nanoribbon as the Fermi energy is in the subgaps. While the later can give rise to the spin precession in the nanoribbon. Therefore, the zigzag silicene nanoribbon can be used as an efficient spin filter and spin modulation device.

preprint2012arXiv

Localization and Mobility Gap in Topological Anderson Insulator

It has been proposed that disorder may lead to a new type of topological insulator, called topological Anderson insulator (TAI). Here we examine the physical origin of this phenomenon. We calculate the topological invariants and density of states of disordered model in a super-cell of 2-dimensional HgTe/CdTe quantum well. The topologically non-trivial phase is triggered by a band touching as the disorder strength increases. The TAI is protected by a mobility gap, in contrast to the band gap in conventional quantum spin Hall systems. The mobility gap in the TAI consists of a cluster of non-trivial subgaps separated by almost flat and localized bands.

preprint2012arXiv

Pure spin current in a two-dimensional topological insulator

We predict a mechanism to generate a pure spin current in a two-dimensional topological insulator. As the magnetic impurities exist on one of edges of the two-dimensional topological insulator, a gap is opened in the corresponding gapless edge states but another pair of gapless edge states with opposite spin are still protected by the time-reversal symmetry. So the conductance plateaus with the half-integer values $e^2/h$ can be obtained in the gap induced by magnetic impurities, which means that the pure spin current can be induced in the sample. We also find that the pure spin current is insensitive to weak disorder. The mechanism to generate pure spin currents is generalized for two-dimensional topological insulators.

preprint2012arXiv

Quantum spin Hall effect induced by electric field in silicene

We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by tuning the two kinds of Rashba spin-orbit couplings properly. Furthermore, the gapless edge states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that the quantum spin Hall effect can be induced by an external electric field in silicene, which may have certain practical significance in applications for future spintronics device.

preprint2012arXiv

Spin-polarized current induced by a local exchange field in a silicene nanoribbon

A mechanism to generate a spin-polarized current in a two-terminal zigzag silicene nanoribbon is predicted. As a weak local exchange field that is parallel to the surface of silicene is applied on one of edges of the silicene nanoribbon, a gap is opened in the corresponding gapless edge states but another pair of gapless edge states with opposite spin are still protected by the time-reversal symmetry. Hence, a spin-polarized current can be induced in the gap opened by the local exchange field in this two-terminal system. What is important is that the spin-polarized current can be obtained even in the absence of Rashba spin-orbit coupling and in the case of the very weak exchange filed. That is to say, the mechanism to generate the spin-polarized currents can be easily realized experimentally.We also find that the spin-polarized current is insensitive to weak disorder.

preprint2011arXiv

Three-Dimensional Topological Insulator in a Magnetic Field: Chiral Side Surface States and Quantized Hall Conductance

Low energy excitation of surface states of a three-dimensional topological insulator (3DTI) can be described by Dirac fermions. By using a tight-binding model, the transport properties of the surface states in a uniform magnetic field is investigated. It is found that chiral surface states parallel to the magnetic field are responsible to the quantized Hall (QH) conductance $(2n+1)\frac{e^2}{h}$ multiplied by the number of Dirac cones. Due to the two-dimension (2D) nature of the surface states, the robustness of the QH conductance against impurity scattering is determined by the oddness and evenness of the Dirac cone number. An experimental setup for transport measurement is proposed.

preprint2009arXiv

Impurity-induced bound states in iron-based superconductors with s-wave cos(kx)cos(ky) pairing symmetry

Using both the self-consistent Bogoliubov-de Gennes formulation and non-self-consistent T-matrix approach, we perform a comprehensive investigation of the in-gap bound states induced by a localized single impurity in iron-based superconductors. We focus on studying signatures associated with the unconventional sign-changed s-wave pairing symmetry. For a non-magnetic impurity, we find that there are two in-gap bounds, symmetric with respect to zero energy, only in the sign changed s-wave pairing state, not in the sign-unchanged s-wave state, due to the existence of non-trivial Andreev bound states caused by the sign change. For a magnetic impurity, we find that due to the breakdown of the local time-reversal symmetry, there exist only bound state solutions (with orbital degeneracy) carrying one of the electron-spin polarizations around the impurity. As increasing the scattering strength, the system undergoes a quantum phase transition (level crossing) from a spin-unpolarized ground state to a spin-polarized one. While the results for the magnetic impurity are qualitatively similar in both the sign-changed and sign-unchanged s-wave superconducting states, the bound states in the first case are more robust and there is no $π$ phase shift of the SC gap near the impurity in the strong scattering regime.

preprint2009arXiv

Quasiparticle Scattering Interference in Superconducting Iron-pnictides

Using both two orbital and five orbital models, we investigate the quasiparticle interference (QPI) patterns in the superconducting (SC) state of iron-based superconductors. We compare the results for nonmagnetic and magnetic impurities in sign-changed s-wave $\cos(k_x)\cdot\cos(k_y)$ and sign-unchanged $|\cos(k_x)\cdot\cos(k_y)|$ SC states. While the patterns strongly depend on the chosen band structures, the sensitivity of peaks around $(\pmπ,0)$ and $(0,\pmπ)$ wavevectors on magnetic or non-magnetic impurity, and sign change or sign unchanged SC orders is common in two models. Our results strongly suggest that QPI may provide direct information of band structures and evidence of the pairing symmetry in the SC states.