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Shruti

Shruti appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.supr-concond-mat.str-elcond-mat.mtrl-sci

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Published work

8 published item(s)

preprint2015arXiv

Effect of pressure on superconductivity in doped topological crystalline insulator Sn0.5In0.5Te

We report on the impact of hydrostatic pressure on the superconductivity of optimally (Indium) doped SnTe which is established to be derived from a topological crystalline insulating phase. Single crystals of Sn1-xInxTe were synthesized by a modified Bridgman method that exhibited maximum superconducting Tc of 4.4 K for x= 0.5. Hydrostatic pressure upto 2.5 GPa was applied on the crystals of Sn0.5In0.5Te and electrical resistivity as a function of temperature and pressure was measured. We observed decrease in onset superconducting transition temperature from 4.4 K to 2.8 K on increasing pressure from ambient to 2.5 GPa. The normal state resistivity also decreased abruptly by an order of magnitude at 0.5 GPa but for higher pressures, the same decreased marginally. From onset, offset and zero resistivity values, dTc/dP of -0.6K/GPa was confirmed. The low temperature normal state resistivity followed T^2 dependence suggesting Fermi liquid behaviour both for ambient and high pressure data. This increase in metallic characteristics accompanied by normal state Fermi liquid behaviour is in accordance with a dome structure for Tc variation with varying carrier concentration.

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preprint2015arXiv

Improved superconducting properties of skutterudite La3Co4Sn13 with indium substitution

We report on two fold increase in superconducting transition temperature of La3Co4Sn13 by substituting indium at the tin site. The transition temperature of this skutterudite is observed to increase from 2.5 K to 5.1 K for 10 % indium substituted sample. The band structure and density of states calculations also indicate such a possibility. The compounds exhibit type - II superconductivity and the values of lower critical field (Hc1), upper critical field (Hc2), Ginzburg - Landau coherence length , penetration depth and GL parameter are estimated to be 0.0028 T, 0.68 T, 21.6 nm, 33.2 nm and 1.53 respectively for La3 Co4Sn11.7In1.3. Hydrostatic external pressure leads to decrease in transition temperature and the calculated pressure coefficient is -0.311 K/GPa . Flux pinning and vortex activation energies also improved with indium addition. Only positive frequencies are observed in phonon dispersion curve that relate to the absence of charge density wave or structural instability in the normal state.

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preprint2015arXiv

Single gap s-wave superconductivity in Nb2PdS5

Superconducting order parameter and its symmetry are important parameters towards deciphering the pairing mechanism in newly discovered superconducting systems. We report a study on penetration depth measurement on Nb2PdS5 that has recently been reported with extremely high upper critical field with possible triplet pairing mechanism. Our data show that at low temperatures the change in penetration depth is best fitted with BCS s-wave model for single gap. The zero-temperature value of the superconducting energy gap is estimated to be Δ0 = 1.05 meV. The superfluid density in the entire temperature range is well described by single gap for λ (0) = 220 nm.

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preprint2015arXiv

Superconductivity by Sr Intercalation in Layered Topological Insulator Bi2Se3

Strontium intercalation between van der Waals bonded layers of topological insulator Bi2Se3 is found to induce superconductivity with a maximum Tc of 2.9 K. Transport measurement on single crystal of optimally doped sample Sr0.1Bi2Se3 shows weak anisotropy (1.5) and upper critical field Hc2(0) equals to 2.1 T for magnetic field applied per-pendicular to c -axis of the sample. The Ginzburg-Landau coherence lengths are Xi-ab = 15.3 Å and Xi_c = 10.2 Å. The lower critical field and zero temperature penetration depth Lambda(0) are estimated to be 0.35 mT and 1550 nm respectively. Hall and Seebeck measurements confirm the dominance of electronic conduction and the carrier concentration is surprisingly low (n = 1.85 x 10^19 cm-3) at 10 K indicating possibility of unconventional superconductivity.

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preprint2014arXiv

Electromagnetic Properties of Topological Crystalline Superconductor Sn0.5In0.5Te

We report on the superconducting properties of In doped SnTe which has recently been explored as a topological crystalline superconductor. Single crystals of Sn0.5In0.5Te have been synthesized by modified Bridgman method. Resistivity measurement performed in the range 1.6K to 300K shows metallic normal state with onset of superconducting transition at Tc = 4.5K. Bulk superconductivity has also been confirmed by DC magnetization, AC susceptibility and rf penetration depth measurements. The zero temperature upper critical field, lower critical field, coherence length, penetration depth are estimated to be 1.6T, 10Oe, 143.5 Å and 832nm respectively. Temperature dependence of low temperature penetration depth indicates S-wave fully gapped characteristics with BCS gap meV. Hall and Seebeck coefficient measurements confirm dominance of hole conduction with possible phonon-drag effects around ~45K. Resistive transition studied under the applied magnetic field shows thermally activated flux flow behavior.

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preprint2013arXiv

Appearance of superconductivity in new BiS2 based layered LaO0.5F0.5BiS2

We report here synthesis, structural, DC magnetization, and transport studies of new BiS2 based layered LaO0.5F0.5BiS2 superconductor [1]. The sample was synthesized by conventional solid state route via vacuum encapsulation technique at 800oC for 12h. LaO0.5F0.5BiS2 crystallizes in tetragonal P4/nmm space group with lattice parameters a = 4.0703(5)Å, c = 13.3902(4)Å. Bulk superconductivity is confirmed with superconducting transition temperature (Tc) of 2.7K by DC magnetization measurements. The Isothermal magnetization (MH) measurements showed closed loops with clear signatures of flux pinning and irreversible behavior. The resistivity measurements confirmed an onset Tc of 2.7K. The magneto-transport ρ(T,H) measurements showed a resistive broadening and decrease in Tc (ρ=0) to lower temperatures with increasing magnetic field. The magnetic phase diagram involving upper critical and irreversibility fields as a function of temperature has been ascertained. Our DC magnetization and electrical transport measurements confirm the appearance of bulk superconductivity in LaO0.5F0.5BiS2 superconductor.

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preprint2013arXiv

Evidence for Fully Gapped Strong Coupling S-wave Superconductivity in Bi4O4S3

We report on the superconducting gap and pairing symmetry in layered superconductor Bi4O4S3. The measurement of temperature dependence of magnetic penetration depth was carried out using tunnel diode oscillator technique. It is observed that Bi4O4S3 is a conventional s-wave type superconductor with fully developed gap. The zero-temperature value of the superconducting energy gap Δ0 was found to be 1.54 meV, corresponding to the ratio 2Δ0/kBTc=7.2 which is much higher than the BCS value of 3.53. In the superconducting range, superfluid density is very well described by single gap s- wave model.

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preprint2013arXiv

Structural, Electromagnetic, and Thermoelectric properties of Bi4O4S3 Superconductor

We report on the synthesis and extensive characterization of layered Bi4O4S3 superconductor. This is the optimally doped sample with Tc ~5.3 K out of a series of Bi6O4S4(SO4)_1-x samples synthesized by solid state reaction. The series was synthesized towards establishing a phase diagram of transition temperature as a function of carrier concentration. Crystal structure for Bi4O4S3 shows larger bending of Bi2-S2-Bi2 bond in the BiS2 layer compared to that for the parent phase. Scanning electron microscopy images show platelets like morphology for Bi4O4S3 signifying the layered structure. While the parent compound is found to be semiconducting, the electrical resistivity of Bi4O4S3 exhibits T^2 dependence in a small temperature range between 25 and 50 K. The typical dome structure for variation of Tc with dopant concentration is not observed. From the magneto-transport data Hc2 for Bi4O4S3 is estimated to be ~2.75T with WHH approximation and the corresponding coherence length is ~110A. Support for multiband signatures is not seen from magneto-resistance data. RF susceptibility data fits well for S-wave isotropic gap with gap value higher than BCS strong coupling limit. Hall measurements confirm dominance of electronic transport. The experimental value of Seebeck coefficient at 35K is well in accord with the calculated value deduced by using density of charge carriers from Hall experiments. The Sommerfeld constant is estimated to be ~ 1.113 mJ/K^2 mol. Evidence for thermally activated flux flow is observed.

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