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V. K. Maurya

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cond-mat.str-el cond-mat.supr-con cond-mat.mtrl-sci

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preprint2015arXiv

Effect of pressure on superconductivity in doped topological crystalline insulator Sn0.5In0.5Te

We report on the impact of hydrostatic pressure on the superconductivity of optimally (Indium) doped SnTe which is established to be derived from a topological crystalline insulating phase. Single crystals of Sn1-xInxTe were synthesized by a modified Bridgman method that exhibited maximum superconducting Tc of 4.4 K for x= 0.5. Hydrostatic pressure upto 2.5 GPa was applied on the crystals of Sn0.5In0.5Te and electrical resistivity as a function of temperature and pressure was measured. We observed decrease in onset superconducting transition temperature from 4.4 K to 2.8 K on increasing pressure from ambient to 2.5 GPa. The normal state resistivity also decreased abruptly by an order of magnitude at 0.5 GPa but for higher pressures, the same decreased marginally. From onset, offset and zero resistivity values, dTc/dP of -0.6K/GPa was confirmed. The low temperature normal state resistivity followed T^2 dependence suggesting Fermi liquid behaviour both for ambient and high pressure data. This increase in metallic characteristics accompanied by normal state Fermi liquid behaviour is in accordance with a dome structure for Tc variation with varying carrier concentration.

preprint2015arXiv

Superconductivity by Sr Intercalation in Layered Topological Insulator Bi2Se3

Strontium intercalation between van der Waals bonded layers of topological insulator Bi2Se3 is found to induce superconductivity with a maximum Tc of 2.9 K. Transport measurement on single crystal of optimally doped sample Sr0.1Bi2Se3 shows weak anisotropy (1.5) and upper critical field Hc2(0) equals to 2.1 T for magnetic field applied per-pendicular to c -axis of the sample. The Ginzburg-Landau coherence lengths are Xi-ab = 15.3 Å and Xi_c = 10.2 Å. The lower critical field and zero temperature penetration depth Lambda(0) are estimated to be 0.35 mT and 1550 nm respectively. Hall and Seebeck measurements confirm the dominance of electronic conduction and the carrier concentration is surprisingly low (n = 1.85 x 10^19 cm-3) at 10 K indicating possibility of unconventional superconductivity.

preprint2014arXiv

Electromagnetic Properties of Topological Crystalline Superconductor Sn0.5In0.5Te

We report on the superconducting properties of In doped SnTe which has recently been explored as a topological crystalline superconductor. Single crystals of Sn0.5In0.5Te have been synthesized by modified Bridgman method. Resistivity measurement performed in the range 1.6K to 300K shows metallic normal state with onset of superconducting transition at Tc = 4.5K. Bulk superconductivity has also been confirmed by DC magnetization, AC susceptibility and rf penetration depth measurements. The zero temperature upper critical field, lower critical field, coherence length, penetration depth are estimated to be 1.6T, 10Oe, 143.5 Å and 832nm respectively. Temperature dependence of low temperature penetration depth indicates S-wave fully gapped characteristics with BCS gap meV. Hall and Seebeck coefficient measurements confirm dominance of hole conduction with possible phonon-drag effects around ~45K. Resistive transition studied under the applied magnetic field shows thermally activated flux flow behavior.