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Shriram Ramanathan

Shriram Ramanathan contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2025arXiv

Protonic Nickelate Device Networks for Spatiotemporal Neuromorphic Computing

Computation in biological neural circuits arises from the interplay of nonlinear temporal responses and spatially distributed dynamic network interactions. Replicating this richness in hardware has remained challenging, as most neuromorphic devices emulate only isolated neuron- or synapse-like functions. In this work, we introduce an integrated neuromorphic computing platform in which both nonlinear spatiotemporal processing and programmable memory are realized within a single perovskite nickelate material system. By engineering symmetric and asymmetric hydrogenated NdNiO3 junction devices on the same wafer, we combine ultrafast, proton-mediated transient dynamics with stable multilevel resistance states. Networks of symmetric NdNiO3 junctions exhibit emergent spatial interactions mediated by proton redistribution, while each node simultaneously provides short-term temporal memory, enabling nanoseconds scale operation with an energy cost of 0.2 nJ per input. When interfaced with asymmetric output units serving as reconfigurable long-term weights, these networks allow both feature transformation and linear classification in the same material system. Leveraging these emergent interactions, the platform enables real-time pattern recognition and achieves high accuracy in spoken-digit classification and early seizure detection, outperforming temporal-only or uncoupled architectures. These results position protonic nickelates as a compact, energy-efficient, CMOS-compatible platform that integrates processing and memory for scalable intelligent hardware.

preprint2022arXiv

Nanoscale Thermal Imaging of VO$_2$ via Poole-Frenkel Conduction

We present a method for nanoscale thermal imaging of insulating thin films using atomic force microscopy (AFM), and we demonstrate its utility on VO$_2$. We sweep the applied voltage $V$ to a conducting AFM tip in contact mode and measure the local current $I$ through the film. By fitting the $IV$ curves to a Poole-Frenkel conduction model at low $V$, we calculate the local temperature with spatial resolution better than 50 nm using only fundamental constants and known film properties. Our thermometry technique enables local temperature measurement of \textit{any} insulating film dominated by the Poole-Frenkel conduction mechanism, and can be extended to insulators that display other conduction mechanisms.

preprint2022arXiv

Quantum materials for energy-efficient neuromorphic computing

Neuromorphic computing approaches become increasingly important as we address future needs for efficiently processing massive amounts of data. The unique attributes of quantum materials can help address these needs by enabling new energy-efficient device concepts that implement neuromorphic ideas at the hardware level. In particular, strong correlations give rise to highly non-linear responses, such as conductive phase transitions that can be harnessed for short and long-term plasticity. Similarly, magnetization dynamics are strongly non-linear and can be utilized for data classification. This paper discusses select examples of these approaches, and provides a perspective for the current opportunities and challenges for assembling quantum-material-based devices for neuromorphic functionalities into larger emergent complex network systems.

preprint2022arXiv

Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams

We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, vanadium dioxide (VO2), locally modifying its insulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of doping or defect density are required.

preprint2022arXiv

Wavelength-by-wavelength temperature-independent thermal radiation utilizing an insulator-metal transition

Both the magnitude and spectrum of the blackbody-radiation distribution change with temperature. Here, we designed the temperature-dependent spectral emissivity of a coating to counteract all the changes in the blackbody-radiation distribution over a certain temperature range, enabled by the nonhysteretic insulator-to-metal phase transition of SmNiO3. At each wavelength within the long-wave infrared atmospheric-transparency window, the thermal radiance of our coating remains nearly constant over a temperature range of at least 20 °C. Our approach can conceal thermal gradients and transient temperature changes from infrared imaging systems, including those that discriminate by wavelength, such as multispectral and hyperspectral cameras.

preprint2021arXiv

First Demonstration of Robust Tri-Gate \b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 °C

Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with a 50 nm fin structure. For high-quality interface between \b{eta}-Ga2O3 and gate dielectric, atomic layer-deposited 15-nm-thick aluminum oxide (Al2O3) was utilized with Tri-methyl-aluminum (TMA) self-cleaning surface treatment. The fabricated devices demonstrate extremely low subthreshold slope (SS) of 61 mV/dec, high drain current (IDS) ON/OFF ratio of 1.5 X 109, and negligible transfer characteristic hysteresis. We also experimentally demonstrated robustness of these devices with current-voltage (I-V) characteristics measured at temperatures up to 400 °C.

preprint2020arXiv

Ultrathin broadband reflective optical limiter

Optical limiters are nonlinear devices that feature decreasing transmittance with increasing incident optical intensity, and thus can protect sensitive components from high-intensity illumination. The ideal optical limiter reflects rather than absorbs light in its active ("limiting") state, minimizing risk of damage to the limiter itself. Previous efforts to realize reflective limiters were based on embedding nonlinear layers into relatively thick multilayer photonic structures, resulting in substantial fabrication complexity, reduced speed and, in some instances, limited working bandwidth. We overcome these tradeoffs by using the insulator-to-metal transition in vanadium dioxide (VO2) to achieve intensity-dependent modulation of resonant transmission through aperture antennas. Due to the dramatic change of optical properties across the insulator-to-metal transition, low-quality-factor resonators were sufficient to achieve high on-off ratios in device transmittance. As a result, our ultra-thin reflective limiter (thickness ~1/100 of the free-space wavelength) is broadband in terms of operating wavelength (> 2 um at 10 um) and angle of incidence (up to ~50$°$ away from the normal).

preprint2019arXiv

Temperature-independent thermal radiation

Thermal emission is the process by which all objects at non-zero temperatures emit light, and is well-described by the classic Planck, Kirchhoff, and Stefan-Boltzmann laws. For most solids, the thermally emitted power increases monotonically with temperature in a one-to-one relationship that enables applications such as infrared imaging and non-contact thermometry. Here, we demonstrate ultrathin thermal emitters that violate this one-to-one relationship via the use of samarium nickel oxide (SmNiO3), a strongly correlated quantum material that undergoes a fully reversible, temperature-driven solid-state phase transition. The smooth and hysteresis-free nature of this unique insulator-to-metal (IMT) phase transition allows us to engineer the temperature dependence of emissivity to precisely cancel out the intrinsic blackbody profile described by the Stefan-Boltzmann law, for both heating and cooling. Our design results in temperature-independent thermally emitted power within the long-wave atmospheric transparency window (wavelengths of 8 - 14 um), across a broad temperature range of ~30 °C, centered around ~120 °C. The ability to decouple temperature and thermal emission opens a new gateway for controlling the visibility of objects to infrared cameras and, more broadly, new opportunities for quantum materials in controlling heat transfer.