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Kui-juan Jin

Kui-juan Jin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hall

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Published work

13 published item(s)

preprint2023arXiv

Miniature Magnetic Nano islands in a Morphotropic Cobaltite Matrix

High-density magnetic memories are key components in spintronics, quantum computing, and energy-efficient electronics. Reduced dimensionality and magnetic domain stability at the nanoscale are essential for the miniaturization of magnetic storage units. Yet, inducing magnetic order, and selectively tuning spin-orbital coupling at specific locations have remained challenging. Here we demonstrate the construction of switchable magnetic nano-islands in a nonmagnetic matrix based on cobaltite homo-structures. The magnetic and electronic states are laterally modified by epitaxial strain, which is regionally controlled by freestanding membranes. Atomically sharp grain boundaries isolate the crosstalk between magnetically distinct regions. The minimal size of magnetic nano-islands reaches 35 nm in diameter, enabling an areal density of 400 Gbit per inch square. Besides providing an ideal platform for precisely controlled read and write schemes, this methodology can enable scalable and patterned memories on silicon and flexible substrates for various applications.

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preprint2022arXiv

Braiding lateral morphotropic grain boundary in homogeneitic oxides

Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. Our work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as provides a platform for exploring potential applications in neuromorphics, solid state batteries, and catalysis.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces

Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides are seldomly explored due to the difficulty in synthesizing high-quality and correct composition nitride films. Here we report the fabrication of single-crystalline ferromagnetic Fe3N thin films with precisely controlled thickness. As film thickness decreasing, the magnetization deteriorates dramatically, and electronic state transits from metallic to insulating. Strikingly, the high-temperature ferromagnetism maintains in a Fe3N layer with a thickness down to 2 u. c. (~ 8 Å). The magnetoresistance exhibits a strong in-plane anisotropy and meanwhile the anomalous Hall resistance reserves its sign when Fe3N layer thickness exceeds 5 u. c. Furthermore, we observe a sizable exchange bias at the interfaces between a ferromagnetic Fe3N and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depend on the controllable bending curvature using cylinder diameter engineering (CDE) technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives towards the practical applications.

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preprint2021arXiv

Anisotropic electronic phase transition in CrN epitaxial thin films

Electronic phase transition in strongly correlated materials is extremely sensitive to the dimensionality and crystallographic orientations. Transition metal nitrides (TMNs) are seldom investigated due to the difficulty in fabricating the high-quality and stoichiometric single crystals. In this letter, we report the epitaxial growth and electronic properties of CrN films on different-oriented NdGaO3 (NGO) substrates. Astonishingly, the CrN films grown on (110)-oriented NGO substrates maintain a metallic phase, whereas the CrN films grown on (010)-oriented NGO substrates are semiconducting. We attribute the unconventional electronic transition in the CrN films to the strongly correlation with epitaxial strain. The effective modulation of bandgap by the anisotropic strain triggers the metal-to-insulator transition consequently. This work provides a convenient approach to modify the electronic ground states of functional materials using anisotropic strain and further stimulates the investigations of TMNs.

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preprint2021arXiv

Dynamics of anisotropic oxygen-ion migration in strained cobaltites

Orientation control of oxygen vacancy channel (OVC) is a highly desirable for tailoring oxygen diffusion as it serves fast transport channel in ion conductors, which is widespread exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ions hopping towards preferential vacant sites is a key to clarifying migration pathways. Here we report the anisotropic oxygen-ion migration mediated by strain in ultrathin cobaltites via in-situ thermal activation in an atomic-resolved transmission electron microscopy. Oxygen migration pathways are constructed on the basis of the atomic structure during the OVC switching, which is manifested as the vertical-to-horizontal OVC switching under tensile strain, but the horizontal-to-diagonal switching under compression. We evaluate the topotactic structural changes to OVC, determine the crucial role of tolerance factor for OVC stability and establish the strain-dependent phase diagram. Our work provides a practical guide for engineering OVC orientation that is applicable ionic-oxide electronics.

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preprint2021arXiv

Room-temperature ferromagnetism at an oxide/nitride interface

Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via hetero-anions has not been explored and the associated quantum states is unknown. Here we report the successful epitaxial synthesis and characterizations of chromium oxide (Cr2O3)-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr3+ ions via anion-hybridizations across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures.

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preprint2021arXiv

Structural Twinning-induced Insulating Phase in CrN (111) Films

Electronic states of a correlated material can be effectively modified by structural variations delivered from a single-crystal substrate. In this letter, we show that the CrN films grown on MgO (001) substrates have a (001) orientation, whereas the CrN films on α-Al2O3 (0001) substrates are oriented along (111) direction parallel to the surface normal. Transport properties of CrN films are remarkably different depending on crystallographic orientations. The critical thickness for the metal-insulator transition (MIT) in CrN 111 films is significantly larger than that of CrN 001 films. In contrast to CrN 001 films without apparent defects, scanning transmission electron microscopy results reveal that CrN 111 films exhibit strain-induced structural defects, e. g. the periodic horizontal twinning domains, resulting in an increased electron scattering facilitating an insulating state. Understanding the key parameters that determine the electronic properties of ultrathin conductive layers is highly desirable for future technological applications.

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preprint2016arXiv

Engineering charge ordering into multiferroicity

Multiferroic materials have attracted great interests but are rare in nature. In many transitional metal oxides, charge ordering and magnetic ordering coexist, so that a method of engineering charge-ordered materials into ferroelectric materials would lead to a large class of multiferroic materials. We propose a strategy for designing new ferroelectric or even multiferroic materials by inserting a spacing layer into each two layers of charge-ordered materials and artificially making a superlattice. One example of the model demonstrated here is the perovskite (LaFeO$_3$)$_2$/LaTiO$_3$ (111) superlattice, in which the LaTiO$_3$ layer acts as the donor and the spacing layer, and the LaFeO$_3$ layer is half doped and performs charge ordering. The collaboration of the charge ordering and the spacing layer breaks the space inversion symmetry, resulting in a large ferroelectric polarization. As the charge ordering also leads to a ferrimagnetic structure, the (LaFeO$_3$)$_2$/LaTiO$_3$ is multiferroic. It is expected that this work can encourage the designing and experimentally implementation of a large class of multiferroic structures with novel properties.

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preprint2016arXiv

Evolution of the electronic and lattice structure with carrier injection in BiFeO$_3$

We report a density functional study on the evolution of the electronic and lattice structure in BiFeO$_3$ with injected electrons and holes. First, the self-trapping of electrons and holes were investigated. We found that the injected electrons tend to be localized on Fe sites due to the local lattice expansion, the on-site Coulomb interaction of Fe $3d$ electrons, and the antiferromagnetic order in BiFeO$_3$. The injected holes tend to be delocalized if the on-site Coulomb interaction of O $2p$ is weak (in other words, $U_\mathrm{O}$ is small). Single center polarons and multi-center polarons are formed with large and intermediate $U_\mathrm{O}$, respectively. With intermediate $U_\mathrm{O}$, multi-center polarons can be formed. We also studied the lattice distortion with the injection of carriers by assuming the delocalization of these carriers. We found that the ferroelectric off-centering of BiFeO$_3$ increases with the concentration of the electrons injected and decreases with that of the holes injected. It was also found that a structural phase transition from $R3c$ to the non-ferroelectric $Pbnm$ occurs, with the hole concentration over 8.7$\times10^{19} cm^{-3}$. The change of the off-centering is mainly due to the change of the lattice volume. The understanding of the carrier localization mechanism can help to optimize the functionality of ferroelectric diodes and the ferroelectric photovoltage devices, while the understanding of the evolution of the lattice with carriers can help tuning the ferroelectric properties by the carriers in BiFeO$_3$.

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preprint2016arXiv

Insulating phase at low temperature in ultrathin La0.8Sr0.2MnO3 films

Metal-insulator transition is observed in the La0.8Sr0.2MnO3 thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells and it is found that the Mott variable range hopping conduction dominates in this insulating phase at low temperature with a decrease of localization length in thinner films. A deficiency of oxygen content and a resulted decrease of the Mn valence have been observed in the ultrathin films with thickness smaller than or equal to 10 unit cells by studying the aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy of the films. These results suggest that the existence of the oxygen vacancies in thinner films suppresses the double-exchange mechanism and contributes to the enhancement of disorder, leading to a decrease of the Curie temperature and the low temperature insulating phase in the ultrathin films. In addition, the suppression of the magnetic properties in thinner films indicates stronger disorder of magnetic moments, which is considered to be the reason for this decrease of the localization length.

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preprint2016arXiv

Oxygen vacancy induced room temperature metal-insulator transition in nickelates films and its potential application in photovoltaics

Oxygen vacancy is intrinsically coupled with magnetic, electronic and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by post-annealing at temperature lower than 300 degree centigrade and realize the reversible metal-insulator transition in epitaxial NdNiO3 films. Importantly, over six orders of magnitude in the resistance modulation and a large change in optical band gap are demonstrated at room temperature without destroying the parent framework and changing the p-type conductive mechanism. Further study revealed that oxygen vacancies stabilized the insulating phase at room temperature is universal for perovskite nickelates films. Acting as electron donors, oxygen vacancies not only stabilize the insulating phase at room temperature, but also induce a large magnetization of ~50 emu/cm3 due to the formation of strongly correlated Ni2+ t2g6eg2 states. The band gap opening is an order of magnitude larger than that of the thermally driven metal-insulator transition and continuously tunable. Potential application of the newly found insulating phase in photovoltaics has been demonstrated in the nickelates-based heterojunctions. Our discovery opens up new possibilities for strongly correlated perovskite nickelates.

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preprint2016arXiv

Persisting of Polar Distortion with Electron Doping in Lone-Pair Driven Ferroelectrics

Free electrons can screen out long-range Coulomb interaction and destroy the polar distortion in some ferroelectric materials, whereas the coexistence of polar distortion and metallicity were found in several non-central-symmetric metals (NCSMs). Therefore, the mechanisms and designing of NCSMs have attracted great interests. In this work, by first-principles calculation, we found the polar distortion in the lone-pair driven ferroelectric material PbTiO$_3$ can not only persist, but also increase with electron doping. We further analyzed the mechanisms of the persisting of the polar distortion. We found that the Ti site polar instability is suppressed but the Pb site polar instability is intact with the electron doping. The Pb-site instability is due to the lone-pair mechanism which can be viewed as a pseudo-Jahn-Teller effect, a mix of the ground state and the excited state by ion displacement from the central symmetric position. The lone-pair mechanism is not strongly affected by the electron doping because neither the ground state or the excited state involved is at the Fermi energy. The enhancement of the polar distortion is related to the increasing of the Ti ion size by doping. These results show the lone-pair stereoactive ions can be used in designing NCSMs.

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preprint2015arXiv

Ferroelectric Control of Metal-Insulator Transition

We propose a method of controlling the metal-insulator transition of one perovskite material at its interface with a another ferroelectric material based on first principle calculations. The operating principle is that the rotation of oxygen octahedra tuned by the ferroelectric polarization can modulate the superexchange interaction in this perovskite. We designed a tri-color superlattice of (BiFeO$_3$)$_N$/LaNiO$_3$/LaTiO$_3$, in which the BiFeO$_3$ layers are ferroelectric, the LaNiO$_3$ layer is the layer of which the electronic structure is to be tuned, and LaTiO$_3$ layer is inserted to enhance the inversion asymmetry. By reversing the ferroelectric polarization in this structure, there is a metal-insulator transition of the LaNiO$_3$ layer because of the changes of crystal field splitting of the Ni $e_g$ orbitals and the bandwidth of the Ni in-plane $e_g$ orbital. It is highly expected that a metal-transition can be realized by designing the structures at the interfaces for more materials.

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