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Er-Jia Guo

Er-Jia Guo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.supr-conphysics.app-ph

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Published work

15 published item(s)

preprint2023arXiv

Miniature Magnetic Nano islands in a Morphotropic Cobaltite Matrix

High-density magnetic memories are key components in spintronics, quantum computing, and energy-efficient electronics. Reduced dimensionality and magnetic domain stability at the nanoscale are essential for the miniaturization of magnetic storage units. Yet, inducing magnetic order, and selectively tuning spin-orbital coupling at specific locations have remained challenging. Here we demonstrate the construction of switchable magnetic nano-islands in a nonmagnetic matrix based on cobaltite homo-structures. The magnetic and electronic states are laterally modified by epitaxial strain, which is regionally controlled by freestanding membranes. Atomically sharp grain boundaries isolate the crosstalk between magnetically distinct regions. The minimal size of magnetic nano-islands reaches 35 nm in diameter, enabling an areal density of 400 Gbit per inch square. Besides providing an ideal platform for precisely controlled read and write schemes, this methodology can enable scalable and patterned memories on silicon and flexible substrates for various applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Braiding lateral morphotropic grain boundary in homogeneitic oxides

Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. Our work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as provides a platform for exploring potential applications in neuromorphics, solid state batteries, and catalysis.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces

Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides are seldomly explored due to the difficulty in synthesizing high-quality and correct composition nitride films. Here we report the fabrication of single-crystalline ferromagnetic Fe3N thin films with precisely controlled thickness. As film thickness decreasing, the magnetization deteriorates dramatically, and electronic state transits from metallic to insulating. Strikingly, the high-temperature ferromagnetism maintains in a Fe3N layer with a thickness down to 2 u. c. (~ 8 Å). The magnetoresistance exhibits a strong in-plane anisotropy and meanwhile the anomalous Hall resistance reserves its sign when Fe3N layer thickness exceeds 5 u. c. Furthermore, we observe a sizable exchange bias at the interfaces between a ferromagnetic Fe3N and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depend on the controllable bending curvature using cylinder diameter engineering (CDE) technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives towards the practical applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Two-Dimensional Electron Gas with High Mobility Forming at BaO/SrTiO3 Interface

Two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides offers an opportunity for fundamental research and device applications. Binary alkaline earth metal oxides possess compatible lattice constants with both silicon and perovskite oxides, exhibiting an enormous potential to bridging those two materials classes for multifunctionalities. Here we report the formation of 2DEG at the interface between the rock-salt BaO and SrTiO3. The highest electron mobility reaches 69000 cm^2 V.S^-1 at 2 K, leading to the typical Shubniko de Haas (SdH) oscillations under the high magnetic fields. The presence of SdH oscillations at different field-angles reveals a quasi-two-dimensional character of the Fermi surface. The first-principles calculations suggest that the effective charge transfer from the BaO to Ti 3dxy orbital at the interfaces is responsible to the observed high carrier mobility. Our results demonstrate that the BaO/STO heterointerface is a platform for exploring the correlated quantum phases, opening a door to the low-power and mesoscopic electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Anisotropic electronic phase transition in CrN epitaxial thin films

Electronic phase transition in strongly correlated materials is extremely sensitive to the dimensionality and crystallographic orientations. Transition metal nitrides (TMNs) are seldom investigated due to the difficulty in fabricating the high-quality and stoichiometric single crystals. In this letter, we report the epitaxial growth and electronic properties of CrN films on different-oriented NdGaO3 (NGO) substrates. Astonishingly, the CrN films grown on (110)-oriented NGO substrates maintain a metallic phase, whereas the CrN films grown on (010)-oriented NGO substrates are semiconducting. We attribute the unconventional electronic transition in the CrN films to the strongly correlation with epitaxial strain. The effective modulation of bandgap by the anisotropic strain triggers the metal-to-insulator transition consequently. This work provides a convenient approach to modify the electronic ground states of functional materials using anisotropic strain and further stimulates the investigations of TMNs.

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preprint2021arXiv

Dynamics of anisotropic oxygen-ion migration in strained cobaltites

Orientation control of oxygen vacancy channel (OVC) is a highly desirable for tailoring oxygen diffusion as it serves fast transport channel in ion conductors, which is widespread exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ions hopping towards preferential vacant sites is a key to clarifying migration pathways. Here we report the anisotropic oxygen-ion migration mediated by strain in ultrathin cobaltites via in-situ thermal activation in an atomic-resolved transmission electron microscopy. Oxygen migration pathways are constructed on the basis of the atomic structure during the OVC switching, which is manifested as the vertical-to-horizontal OVC switching under tensile strain, but the horizontal-to-diagonal switching under compression. We evaluate the topotactic structural changes to OVC, determine the crucial role of tolerance factor for OVC stability and establish the strain-dependent phase diagram. Our work provides a practical guide for engineering OVC orientation that is applicable ionic-oxide electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Ferromagnetic Enhancement in LaMnO3 Films with Release and Flexure

A variety of novel phenomena and functionalities emerge from lowering the dimensionality of materials and enriching the degrees of freedom in modulation. In this work, it is found that the saturation magnetization of LaMnO3 (LMO) films is largely enhanced by 56% after releasing from a brand-new phase of tetragonal strontium aluminate buffer layer, and is significantly increased by 92% with bending films to a curvature of 1 mm-1 using a water-assisted direct-transferring method. Meanwhile, the Curie temperature of LMO films has been improved by 13 K. High-resolution spherical aberration-corrected scanning transmission electron microscopy and first-principles calculations unambiguously demonstrate that the enhanced ferromagnetism is attributed to the strengthened Mn-O-Mn super-exchange interactions from the augmented characteristics of the unconventional P21/n structure caused by the out-of-plane lattice shrinking after strain releasing and increased flexure degree of freestanding LMO films. This work paves a way to achieve large-scale and crack-and-wrinkle-free freestanding films of oxides with largely improved functionalities.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Room-temperature ferromagnetism at an oxide/nitride interface

Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via hetero-anions has not been explored and the associated quantum states is unknown. Here we report the successful epitaxial synthesis and characterizations of chromium oxide (Cr2O3)-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr3+ ions via anion-hybridizations across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Structural Twinning-induced Insulating Phase in CrN (111) Films

Electronic states of a correlated material can be effectively modified by structural variations delivered from a single-crystal substrate. In this letter, we show that the CrN films grown on MgO (001) substrates have a (001) orientation, whereas the CrN films on α-Al2O3 (0001) substrates are oriented along (111) direction parallel to the surface normal. Transport properties of CrN films are remarkably different depending on crystallographic orientations. The critical thickness for the metal-insulator transition (MIT) in CrN 111 films is significantly larger than that of CrN 001 films. In contrast to CrN 001 films without apparent defects, scanning transmission electron microscopy results reveal that CrN 111 films exhibit strain-induced structural defects, e. g. the periodic horizontal twinning domains, resulting in an increased electron scattering facilitating an insulating state. Understanding the key parameters that determine the electronic properties of ultrathin conductive layers is highly desirable for future technological applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Emerging magnetism and anomalous Hall effect in iridate-manganite heterostructures

Strong Coulomb repulsion and spin-orbit coupling are known to give rise to exotic physical phenomena in transition metal oxides. Initial attempts to investigate systems where both of these fundamental interactions are comparably strong, such as 3d and 5d complex oxide superlattices, have revealed properties that only slightly differ from the bulk ones of the constituent materials. Here, we observe that the interfacial coupling between the 3d antiferromagnetic insulator SrMnO3 and the 5d paramagnetic metal SrIrO3 is enormously strong, yielding an anomalous Hall response as the result of charge transfer driven interfacial ferromagnetism. These findings show that low dimensional spin-orbit entangled 3d-5d interfaces provide an avenue to uncover technologically relevant physical phenomena unattainable in bulk materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Enhancing interfacial magnetization with a ferroelectric

Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface's magnetic properties can be probed at an atomic level. Here, we use polarized neutron reflectometry (PNR) to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZr0.2Ti0.8O3/La0.8Sr0.2MnO3 (PZT/LSMO)] heterostructures. We find that there is always suppressed magnetization at the surface and interface of LSMO and such magnetic deterioration can be strongly improved by interfacing with a strongly polar PZT film. The magnetoelectric coupling of magnetism and ferroelectric polarization occurs within a couple of nanometers of the interface as demonstrated by the enhanced interfacial magnetization beyond the bulk value by 5% depending on the polarization of PZT. The latter value is 70% higher than the surface magnetization of a LSMO film without interfacing with a ferroelectric layer. These compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetic field control of the spin Seebeck effect

The origin of the suppression of the longitudinal spin Seebeck effect by applied magnetic fields is studied. We perform numerical simulations of the stochastic Landau-Lifshitz-Gilbert equation of motion for an atomistic spin model and calculate the magnon accumulation in linear temperature gradients for different strengths of applied magnetic fields and different length scales of the temperature gradient. We observe a decrease of the magnon accumulation with increasing magnetic field and we reveal that the origin of this effect is a field dependent change of the frequency distribution of the propagating magnons. With increasing field the magnonic spin currents are reduced due to a suppression of parts of the frequency spectrum. By comparison with measurements of the magnetic field dependent longitudinal spin Seebeck effect in YIG thin films with various thicknesses, we find that our model describes the experimental data very well, demonstrating the importance of this effect for experimental systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Origin of the thickness-dependent low-temperature enhancement of spin Seebeck effect in YIG films

The temperature dependent longitudinal spin Seebeck effect (SSE) in heavy metal (HM)/ Y3Fe5O12 (YIG) bilayers is investigated as a function of different magnetic field strength, different HM detection material, and YIG thickness ranging from nm to mm. A large enhancement of the SSE signal is observed at low temperatures leading to a peak of the signal amplitude. We demonstrate that this enhancement shows a clear dependence on the film thickness, being more pronounced for thicker films and vanishing for films thinner than 600 nm. The peak temperature depends on the applied magnetic field strength as well as on the detection material and interface, revealing a more complex behavior beyond the currently discussed phonon-magnon coupling mechanism that considers only bulk effects. While the thickness dependence and magnetic field dependence can be well explained in the framework of the magnon-driven SSE by taking into account the frequency dependent propagation length of thermally excited magnons in the bulk material, the temperature dependence of the SSE is significantly influenced by the interface coupling to an adjacent detection layer. This indicates that previously neglected interface effects play a key role and that the spin current traversing the interface and being detected in the HM depends differently on the magnon frequency for different HMs.

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preprint2015arXiv

Strain dependence of antiferromagnetic interface coupling in La0.7Sr0.3MnO3/SrRuO3 superlattices

We have investigated the magnetic response of La0.7Sr0.3MnO3/SrRuO3 superlattices to biaxial in-plane strain applied in-situ. Superlattices grown on piezoelectric substrates of 0.72PbMg1/3Nb2/3O3-0.28PbTiO3(001) (PMN-PT) show strong antiferromagnetic coupling of the two ferromagnetic components. The coupling field of mu0HAF = 2.8 T is found to decrease by deltaHAF/delta epsilon ~ -520 mT %-1 under reversible biaxial strain mu0HAF at 80 K in a [La0.7Sr0.3MnO3(22)/SrRuO3(55)]15 superlattice. This reveals a significant strain effect on interfacial coupling. The applied in-plane compression enhances the ferromagnetic order in the manganite layers which are under as-grown tensile strain. It is thus difficult to disentangle the contributions from strain-dependent antiferromagnetic Mn-O-Ru interface coupling and Mn-O-Mn ferromagnetic double exchange near the interface, since the enhanced magnetic order of Mn spins leads to a larger net coupling of SrRuO3 layers at the interface. Strain-dependent orbital occupation in a single-ion picture cannot explain the sign of the observed strain dependence, whereas the enhanced Mn order at the interface is qualitatively in line with it.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Thermal generation of spin current in epitaxial CoFe2O4 thin films

The longitudinal spin Seebeck effect (LSSE) has been investigated in high-quality epitaxial CoFe2O4 (CFO) thin films. The thermally excited spin currents in the CFO films are electrically detected in adjacent Pt layers due to the inverse spin Hall effect (ISHE). The LSSE signal exhibits a linear increase with increasing temperature gradient, yielding a LSSE coefficient of ~100 nV/K at room temperature. The temperature dependence of the LSSE is investigated from room temperature down to 30 K, showing a significant reduction at low temperatures, revealing that the total amount of thermally generated magnons decreases. Furthermore, we demonstrate that the spin Seebeck effect is an effective tool to study the magnetic anisotropy induced by epitaxial strain, especially in ultrathin films with low magnetic moments.

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