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Young-Woo Son

Young-Woo Son contributes to research discovery and scholarly infrastructure.

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Published work

11 published item(s)

preprint2025arXiv

A DFT+$U$+$V$ study of pristine and oxygen-deficient HfO$_2$ with self-consistent Hubbard parameters

HfO$_2$-based ferroelectrics have emerged as promising materials for advanced nanoelectronics, with their robust polarization and silicon compatibility making them ideal for high-density, non-volatile memory applications. Oxygen vacancies, particularly in positively charged states, are suggested to profoundly impact the polymorphism kinetics and phase stability of hafnia, thereby affecting its ferroelectric behavior. The electronic structures of pristine and oxygen-deficient hafnia polymorph have been extensively studied using density functional theory, primarily employing (semi-)local exchange-correlation functionals. However, these methods often underestimate band gaps and may not accurately capture the localized nature of $d$-electrons. In this work, we investigate hafnia in various phases using DFT + $U$ + $V$, with onsite $U$ and intersite $V$ Hubbard parameters computed self-consistently via the pseudohybrid Hubbard density functional, ACBN0, and its extended version eACBN0. We find that the self-consistent DFT + $U$ method provides comparable accuracy to the computationally more expensive Heyd-Scuseria-Ernzerhof (HSE) hybrid density functional in predicting relative thermodynamic stability, band gaps, and density of states. Furthermore, it is a cost-effective approach for estimating the formation energies of oxygen vacancies. Additionally, we demonstrate that environmentally dependent Hubbard parameters serve as useful indicators for analyzing bond strengths and electronic structures in real space.

preprint2022arXiv

Lattice dynamical properties of antiferromagnetic oxides calculated using self-consistent extended Hubbard functional method

We study the lattice dynamics of antiferromagnetic transition-metal oxides by using self-consistent Hubbard functionals. We calculate the ground states of the oxides with the on-site and intersite Hubbard interactions determined self-consistently within the framework of density functional theory. The on-site and intersite Hubbard terms fix the errors associated with the electron self-interaction in the local and semilocal functionals. Inclusion of the intersite Hubbard terms in addition to the on-site Hubbard terms produces accurate phonon dispersion of the transition-metal oxides. Calculated Born effective charges and high-frequency dielectric constants are in good agreement with experiment. Our study provides a computationally inexpensive and accurate set of first-principles calculations for strongly-correlated materials and related phenomena.

preprint2022arXiv

Magnetic Ordering, Anomalous Lifshitz Transition and Topological Grain Boundaries in Two-Dimensional Biphenylene Network

We study electronic properties of a new planar carbon crystal formed through networking biphenylene molecules. Novel electronic features among carbon materials such as zone-center saddle point and peculiar type-II Dirac fermionic states are shown to exist in the low energy electronic spectrum. The type-II state here has a nearly flat branch and is close to a transition to type-I. Possible magnetic instabilities related with low energy bands are discussed. Furthermore, with a moderate uniaxial strain, a pair of Dirac points merge with the zone center saddle point, realizing concurrent Lifshitz transitions of van Hove singularity as well as pair annihilation of the Dirac fermions. A new effective Hamiltonian encompassing all distinctive low energy states is constructed, revealing a finite winding number of the pseudo-spin texture around the Dirac point, quantized Zak phases, and topological grain boundary states.

preprint2021arXiv

Efficient First-Principles Approach with a Pseudohybrid Density Functional for Extended Hubbard Interactions

For fast and accurate calculations of band gaps of solids, we present an {\it ab initio} method that extends the density functional theory plus on-site Hubbard interaction (DFT+$U$) to include inter-site Hubbard interaction ($V$). This formalism is appropriate for considering various interactions such as a local Coulomb repulsion, covalent hybridizations, and their coexistence in solids. To achieve self-consistent evaluations of $U$ and $V$, we adapt a recently proposed Agapito-Curtarolo-Buongiorno Nardelli pseudohybrid functional for DFT$+U$ to implement a density functional of $V$ and obtain band gaps of diverse bulk materials as accurate as those from $GW$ or hybrid functionals methods with a standard DFT computational cost. Moreover, we also show that computed band gaps of few layers black phosphorous and Si(111)-($2\times1$) surface agree with experiments very well, thus meriting the new method for large-scale as well as high throughput calculations with higher accuracy.

preprint2021arXiv

Reshaped Weyl fermionic dispersions driven by Coulomb interactions in MoTe2

We report the direct evidence of impacts of the Coulomb interaction in a prototypical Weyl semimetal, MoTe2, that alter its bare bands in a wide range of energy and momentum. Our quasiparticle interference patterns measured using scanning tunneling microscopy are shown to match the joint density of states of quasiparticle energy bands including momentum-dependent self-energy corrections, while electronic energy bands based on the other simpler local approximations of the Coulomb interaction fail to explain neither the correct number of quasiparticle pockets nor shape of their dispersions observed in our spectrum. With this, we predict a transition between type-I and type-II Weyl fermions with doping and resolve its disparate quantum oscillation experiments, thus highlighting the critical roles of Coulomb interactions in layered Weyl semimetals.

preprint2021arXiv

The 2021 Quantum Materials Roadmap

In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.

preprint2020arXiv

Promising photovoltaic efficiency of a layered silicon oxide crystal Si$_{3}$O

Computational searching and screening of new functional materials exploiting earth abundant elements can accelerate developments of their energy applications. Based on a state-of-the-art materials search algorithm and ab initio calculations, we demonstrate a recently suggested stable silicon oxide with a layered structure (Si$_{3}$O) as an ideal photovoltaic material. With many-body first-principles approaches, the monolayer and layered bulk of Si$_{3}$O show direct quasiparticle gaps of 1.85 eV and 1.25 eV, respectively, while an optical gap of about 1.2 eV is nearly independent of the number of layers. Spectroscopic limited maximum efficiency (SLME) is estimated to be 27% for a thickness of 0.5 μm, making it a promising candidate for solar energy applications.

preprint2019arXiv

Magnetic structures on locally inverted interlayer coupling region of bilayer magnetic system

We investigate the magnetic structures in a bilayer magnetic system with the locally inverted interlayer coupling region using Monte Carlo simulation. Stabilization of multiple magnetic structures including the magnetic skyrmion is possible in the locally inverted interlayer coupling region. Various factors such as the region area, anisotropy, interlayer coupling strength, and exchange coupling strength affects the properties of the structures including its size and chirality. We obtain conditions for their stabilization and for the magnetic structural transitions. Dzyaloshinskii-Moriya interaction (DMI) and the dipolar interaction play a prominent role as they enhance the formation and the stability of structures significantly. An asymmetric feature can arise from the broken inversion symmetry in the structure formation, and it gives an interfacial DMI, which stabilizes the skyrmion. It is realized that the dipole interaction also acts as an effective interfacial DMI in the system.

preprint2010arXiv

Controlling Energy Gap of Bilayer Graphene by Strain

Using the first principles calculations, we show that mechanically tunable electronic energy gap is realizable in bilayer graphene if different homogeneous strains are applied to the two layers. It is shown that the size of energy gap can be simply controlled by adjusting the strength and direction of these strains. We also show that the effect originates from the occurrence of strain-induced pseudo-scalar potentials in graphene. When homogeneous strains with different strengths are applied to each layer of bilayer graphene, transverse electric fields across the two layers can be generated without any external electronic sources, thereby opening an energy gap. The results demonstrate a simple mechanical method of realizing pseudo-electromagnetism in graphene and suggest a maneuverable approach to fabrication of electromechanical devices based on bilayer graphene.

preprint2010arXiv

Controlling Half-Metallicity of Graphene Nanoribbons by Using a Ferroelectric Polymer

On the basis of first-principles computational approaches, we present a new method to drive zigzag graphene nanoribons (ZGNRs) into the half-metallic state using a ferroelectric material, poly(vinylidene fluoride) (PVDF). Owing to strong dipole moments of PVDFs, the ground state of the ZGNR becomes half-metallic when a critical coverage of PVDFs is achieved on the ZGNR. Since ferroelectric polymers are physisorbed, the direction of the dipole field in PVDFs can be rotated by relatively small external electric fields, and the switching between half-metallic and insulating states may be achieved. Our results suggest that, without excessively large external gate electric fields, half-metallic states of ZGNRs are realizable through the deposition of ferroelectric polymers and their electronic and magnetic properties are controllable via noninvasive mutual interactions.

preprint2010arXiv

Effects of Strain on Electronic Properties of Graphene

We present first-principles calculations of electronic properties of graphene under uniaxial and isotropic strains, respectively. The semi-metallic nature is shown to persist up to a very large uniaxial strain of 30% except a very narrow strain range where a tiny energy gap opens. As the uniaxial strain increases along a certain direction, the Fermi velocity parallel to it decreases quickly and vanishes eventually, whereas the Fermi velocity perpendicular to it increases by as much as 25%. Thus, the low energy properties with small uniaxial strains can be described by the generalized Weyl's equation while massless and massive electrons coexist with large ones. The work function is also predicted to increase substantially as both the uniaxial and isotropic strain increases. Hence, the homogeneous strain in graphene can be regarded as the effective electronic scalar potential.