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Young-Woo Son

Young-Woo Son appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.chem-phcond-mat.str-elcond-mat.quant-gascond-mat.supr-conphysics.atm-clusquant-ph

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Published work

37 published item(s)

preprint2025arXiv

A DFT+$U$+$V$ study of pristine and oxygen-deficient HfO$_2$ with self-consistent Hubbard parameters

HfO$_2$-based ferroelectrics have emerged as promising materials for advanced nanoelectronics, with their robust polarization and silicon compatibility making them ideal for high-density, non-volatile memory applications. Oxygen vacancies, particularly in positively charged states, are suggested to profoundly impact the polymorphism kinetics and phase stability of hafnia, thereby affecting its ferroelectric behavior. The electronic structures of pristine and oxygen-deficient hafnia polymorph have been extensively studied using density functional theory, primarily employing (semi-)local exchange-correlation functionals. However, these methods often underestimate band gaps and may not accurately capture the localized nature of $d$-electrons. In this work, we investigate hafnia in various phases using DFT + $U$ + $V$, with onsite $U$ and intersite $V$ Hubbard parameters computed self-consistently via the pseudohybrid Hubbard density functional, ACBN0, and its extended version eACBN0. We find that the self-consistent DFT + $U$ method provides comparable accuracy to the computationally more expensive Heyd-Scuseria-Ernzerhof (HSE) hybrid density functional in predicting relative thermodynamic stability, band gaps, and density of states. Furthermore, it is a cost-effective approach for estimating the formation energies of oxygen vacancies. Additionally, we demonstrate that environmentally dependent Hubbard parameters serve as useful indicators for analyzing bond strengths and electronic structures in real space.

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preprint2022arXiv

Lattice dynamical properties of antiferromagnetic oxides calculated using self-consistent extended Hubbard functional method

We study the lattice dynamics of antiferromagnetic transition-metal oxides by using self-consistent Hubbard functionals. We calculate the ground states of the oxides with the on-site and intersite Hubbard interactions determined self-consistently within the framework of density functional theory. The on-site and intersite Hubbard terms fix the errors associated with the electron self-interaction in the local and semilocal functionals. Inclusion of the intersite Hubbard terms in addition to the on-site Hubbard terms produces accurate phonon dispersion of the transition-metal oxides. Calculated Born effective charges and high-frequency dielectric constants are in good agreement with experiment. Our study provides a computationally inexpensive and accurate set of first-principles calculations for strongly-correlated materials and related phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Magnetic Ordering, Anomalous Lifshitz Transition and Topological Grain Boundaries in Two-Dimensional Biphenylene Network

We study electronic properties of a new planar carbon crystal formed through networking biphenylene molecules. Novel electronic features among carbon materials such as zone-center saddle point and peculiar type-II Dirac fermionic states are shown to exist in the low energy electronic spectrum. The type-II state here has a nearly flat branch and is close to a transition to type-I. Possible magnetic instabilities related with low energy bands are discussed. Furthermore, with a moderate uniaxial strain, a pair of Dirac points merge with the zone center saddle point, realizing concurrent Lifshitz transitions of van Hove singularity as well as pair annihilation of the Dirac fermions. A new effective Hamiltonian encompassing all distinctive low energy states is constructed, revealing a finite winding number of the pseudo-spin texture around the Dirac point, quantized Zak phases, and topological grain boundary states.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Efficient First-Principles Approach with a Pseudohybrid Density Functional for Extended Hubbard Interactions

For fast and accurate calculations of band gaps of solids, we present an {\it ab initio} method that extends the density functional theory plus on-site Hubbard interaction (DFT+$U$) to include inter-site Hubbard interaction ($V$). This formalism is appropriate for considering various interactions such as a local Coulomb repulsion, covalent hybridizations, and their coexistence in solids. To achieve self-consistent evaluations of $U$ and $V$, we adapt a recently proposed Agapito-Curtarolo-Buongiorno Nardelli pseudohybrid functional for DFT$+U$ to implement a density functional of $V$ and obtain band gaps of diverse bulk materials as accurate as those from $GW$ or hybrid functionals methods with a standard DFT computational cost. Moreover, we also show that computed band gaps of few layers black phosphorous and Si(111)-($2\times1$) surface agree with experiments very well, thus meriting the new method for large-scale as well as high throughput calculations with higher accuracy.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Reshaped Weyl fermionic dispersions driven by Coulomb interactions in MoTe2

We report the direct evidence of impacts of the Coulomb interaction in a prototypical Weyl semimetal, MoTe2, that alter its bare bands in a wide range of energy and momentum. Our quasiparticle interference patterns measured using scanning tunneling microscopy are shown to match the joint density of states of quasiparticle energy bands including momentum-dependent self-energy corrections, while electronic energy bands based on the other simpler local approximations of the Coulomb interaction fail to explain neither the correct number of quasiparticle pockets nor shape of their dispersions observed in our spectrum. With this, we predict a transition between type-I and type-II Weyl fermions with doping and resolve its disparate quantum oscillation experiments, thus highlighting the critical roles of Coulomb interactions in layered Weyl semimetals.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The 2021 Quantum Materials Roadmap

In recent years, the notion of Quantum Materials has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and cold atom physics to materials science and quantum computing. Beyond traditional quantum materials such as unconventional superconductors, heavy fermions, and multiferroics, the field has significantly expanded to encompass topological quantum matter, two-dimensional materials and their van der Waals heterostructures, Moire materials, Floquet time crystals, as well as materials and devices for quantum computation with Majorana fermions. In this Roadmap collection we aim to capture a snapshot of the most recent developments in the field, and to identify outstanding challenges and emerging opportunities. The format of the Roadmap, whereby experts in each discipline share their viewpoint and articulate their vision for quantum materials, reflects the dynamic and multifaceted nature of this research area, and is meant to encourage exchanges and discussions across traditional disciplinary boundaries. It is our hope that this collective vision will contribute to sparking new fascinating questions and activities at the intersection of materials science, condensed matter physics, device engineering, and quantum information, and to shaping a clearer landscape of quantum materials science as a new frontier of interdisciplinary scientific inquiry.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Promising photovoltaic efficiency of a layered silicon oxide crystal Si$_{3}$O

Computational searching and screening of new functional materials exploiting earth abundant elements can accelerate developments of their energy applications. Based on a state-of-the-art materials search algorithm and ab initio calculations, we demonstrate a recently suggested stable silicon oxide with a layered structure (Si$_{3}$O) as an ideal photovoltaic material. With many-body first-principles approaches, the monolayer and layered bulk of Si$_{3}$O show direct quasiparticle gaps of 1.85 eV and 1.25 eV, respectively, while an optical gap of about 1.2 eV is nearly independent of the number of layers. Spectroscopic limited maximum efficiency (SLME) is estimated to be 27% for a thickness of 0.5 μm, making it a promising candidate for solar energy applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magnetic structures on locally inverted interlayer coupling region of bilayer magnetic system

We investigate the magnetic structures in a bilayer magnetic system with the locally inverted interlayer coupling region using Monte Carlo simulation. Stabilization of multiple magnetic structures including the magnetic skyrmion is possible in the locally inverted interlayer coupling region. Various factors such as the region area, anisotropy, interlayer coupling strength, and exchange coupling strength affects the properties of the structures including its size and chirality. We obtain conditions for their stabilization and for the magnetic structural transitions. Dzyaloshinskii-Moriya interaction (DMI) and the dipolar interaction play a prominent role as they enhance the formation and the stability of structures significantly. An asymmetric feature can arise from the broken inversion symmetry in the structure formation, and it gives an interfacial DMI, which stabilizes the skyrmion. It is realized that the dipole interaction also acts as an effective interfacial DMI in the system.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Inhibiting Klein tunneling in graphene p-n junction without an external magnetic field

We study by first-principles calculations a densely packed island of organic molecules (F4TCNQ) adsorbed on graphene. We find that with electron doping the island naturally forms a p-n junction in the graphene sheet. For example, a doping level of ~ 3 * 10^{13} electrons per cm^2 results in a p-n junction with 800 meV electrostatic potential barrier. Unlike in a conventional p-n junction in graphene, in the case of the junction formed by an adsorbed organic molecular island we expect that the Klein tunneling is inhibited, even without an applied external magnetic field. Here Klein tunneling is inhibited by the ferromagnetic order that spontaneously occurs in the molecular island upon doping. We estimate that the magnetic barrier in the graphene sheet is around 10 mT.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A metallic mosaic phase and the origin of Mott insulating state in 1T-TaS2

Electron-electron and electron-phonon interactions are two major driving forces that stabilize various charge-ordered phases of matter. The intricate interplay between the two give rises to a peculiar charge density wave (CDW) state, which is also known as a Mott insulator, as the ground state of layered compound 1T-TaS2. The delicate balance also makes it possible to use external perturbations to create and manipulate novel phases in this material. Here, we study a mosaic CDW phase induced by voltage pulses from the tip of a scanning tunneling microscope (STM), and find that the new phase exhibit electronic structures that are entirely different from the Mott ground state of 1T-TaS2 at low temperatures. The mosaic phase consists of nanometer-sized domains characterized by well-defined phase shifts of the CDW order parameter in the topmost layer, and by altered stacking relative to the layer underneath. We discover that the nature of the new phases is dictated by the stacking order, and our results shed fresh light on the origin of the Mott phase in this layered compound.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anomalous excitonic resonance Raman effects in few-layer MoS2

The resonance effects on the Raman spectra from 5 to 900 cm-1 of few-layer MoS2 thin films up to 14-layers were investigated by using six excitation energies. For the main first-order Raman peaks, the intensity maximum occurs at ~2.8 eV for single layer and at ~2.5 eV for few-layer MoS2, which correspond to the band-gap energy. At the excitation energy of 1.96 eV, several anomalous behaviors are observed. Many second-order peaks are anomalously enhanced even though the main first-order peaks are not enhanced. In the low-frequency region (<100 cm-1), a broad peak centered at ~38 cm-1 and its second order peak at 76 cm-1 appear for the excitation energy of 1.96 eV. These anomalous resonance effects are interpreted as being due to strong resonance with excitons or exciton-polaritons.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Incommensurate double-walled carbon nanotubes as one-dimensional moiré crystals

Cylindrical multishell structure is one of the prevalent atomic arrangements in nanowires. Being multishell, the well-defined atomic periodicity is hardly realized in it because the periodic units of individual shells therein generally do not match except for very few cases, posing a challenge to understand its physical properties. Here we show that moiré patterns generated by superimposing atomic lattices of individual shells are decisive in determining its electronic structures. Double- walled carbon nanotubes, as an example, are shown to have spectacular variations in their electronic properties from metallic to semiconducting and further to insulating states depending on their moiré patterns, even when they are composed of only semiconducting nanotubes with almost similar energy gaps and diameters. Thus, aperiodic multishell nanowires can be classified into new one-dimensional moiré crystals with distinct electronic structures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Photocurrent generation at ABA/ABC lateral junction in tri-layer graphene photodetector

Metal-graphene-metal photodetectors utilize photocurrent generated near the graphene/metal junctions and have many advantages including high speed and broad-band operation. Here, we report on photocurrent generation at ABA/ABC stacking domain junctions in tri-layer graphene with a responsivity of 0.18 A/W. Unlike usual metal-graphene-metal devices, the photocurrent is generated in the middle of the graphene channel, not confined to the vicinity of the metal electrodes. The magnitude and the direction of the photocurrent depend on the back-gate bias. Theoretical calculations show that there is a built-in band offset between the two stacking domains, and the dominant mechanism of the photocurrent is the photo-thermoelectric effect due to the Seebeck coefficient difference.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Poisson's Ratio of Layered Two-dimensional Crystals

We present first-principles calculations of elastic properties of multilayered two-dimensional crystals such as graphene, h-BN and 2H-MoS2 which shows that their Poisson's ratios along out-of-plane direction are negative, near zero and positive, respectively, spanning all possibilities for sign of the ratios. While the in-plane Poisson's ratios are all positive regardless of their disparate electronic and structural properties, the characteristic interlayer interactions as well as layer stacking structures are shown to determine the sign of their out-of-plane ratios. Thorough investigation of elastic properties as a function of the number of layers for each system is also provided, highlighting their intertwined nature between elastic and electronic properties.

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preprint2014arXiv

Gate-tunable Phase Transitions in 1T-TaS$_2$

The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced superconductivity and metal-insulator transition. Here we describe an ionic field-effect transistor (termed "iFET"), which uses gate-controlled lithium ion intercalation to modulate the material property of layered atomic crystal 1T-TaS$_2$. The extreme charge doping induced by the tunable ion intercalation alters the energetics of various charge-ordered states in 1T-TaS$_2$, and produces a series of phase transitions in thin-flake samples with reduced dimensionality. We find that the charge-density-wave states in 1T-TaS$_2$ are three-dimensional in nature, and completely collapse in the two-dimensional limit defined by their critical thicknesses. Meanwhile the ionic gating induces multiple phase transitions from Mott-insulator to metal in 1T-TaS$_2$ thin flakes at low temperatures, with 5 orders of magnitude modulation in their resistance. Superconductivity emerges in a textured charge-density-wave state induced by ionic gating. Our method of gate-controlled intercalation of 2D atomic crystals in the bulk limit opens up new possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Large magnetoresistance from long-range interface coupling in armchair graphene nanoribbon junctions

In recent years, bottom-up synthesis procedures have achieved significant advancements in atomically-controlled growth of several-nanometer-long graphene nanoribbons with armchair-shaped edges (AGNRs). This greatly encourages us to explore the potential of such well-defined AGNRs in electronics and spintronics. Here, we propose an AGNR based spin valve architecture that induces a large magnetoresistance up to 900%. We find that, when an AGNR is connected perpendicularly to zigzag-shaped edges, the AGNR allows for long-range extension of the otherwise localized edge state. The huge magnetoresistance is a direct consequence of the coupling of two such extended states from both ends of the AGNR, which forms a perfect transmission channel. By tuning the coupling between these two spin-polarized states with a magnetic field, the channel can be destroyed, leading to an abrupt drop in electron transmission.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Low-bias Negative Differential Resistance effect in armchair graphene nanoribbon junctions

Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect transmission channels close to the Fermi level. Here, we report that by using a bias voltage to drive these transmission channels into the gap of the wider AGNR lead, we can obtain a negative differential resistance (NDR) effect. Owing to the intrinsic properties of the AGNR junctions, the on-set bias reaches as low as ~ 0.2 V and the valley current almost vanishes. We further show that such NDR effect is robust against details of the atomic structure of the junction, substrate and whether the junction is made by etching or by hydrogenation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Manifestation of axion electrodynamics through magnetic ordering on edges of topological insulator

Based on a first-principles approach, we show that in a single crystal of a prototypical topological insulator such as Bi$_2$Se$_3$ the difference in the work function between adjacent surfaces with different crystal-face orientations generates a built-in electric field around facet edges. Owing to the topological magnetoelectric coupling for a given broken time-reversal symmetry in the crystal, the electric field, in turn, forces effective magnetic dipoles to accumulate along the edges, realizing the facet-edge magnetic ordering. We demonstrate that the predicted magnetic ordering which depends only on the work function difference between facets, is in fact a manifestation of the axion electrodynamics in real solids.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Optical absorption of twisted bilayer graphene with interlayer potential asymmetry

We investigate the band structure and the optical absorption spectrum of twisted bilayer graphenes with changing interlayer bias and Fermi energy simultaneously. We show that the interlayer bias lifts the degeneracy of the superlattice Dirac point, while the amount of the Dirac point shift is significantly suppressed in small rotation angles, and even becomes opposite to the applied bias. We calculate the optical absorption spectrum in various asymmetric potentials and Fermi energies, and associate the characteristic spectral features with the band structure. The spectroscopic features are highly sensitive to the interlayer bias and the Fermi energy, and widely tunable by the external field effect.

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preprint2014arXiv

Polarization dependence of double resonant Raman scattering band in bilayer graphene

The polarization dependence of the double resonant Raman scattering (2D) band in bilayer graphene (BLG) is studied as a function of the excitation laser energy. It has been known that the complex shape of the 2D band of BLG can be decomposed into four Lorentzian peaks with different Raman frequency shifts attributable to four individual scattering paths in the energy-momentum space. From our polarization dependence study, however, we reveal that each of the four different peaks is actually doubly degenerate in its scattering channels, i.e., two different scattering paths with similar Raman frequency shifts for each peak. We find theoretically that one of these two paths, ignored for a long time, has a small contribution to their scattering intensities but are critical in understanding their polarization dependences. Because of this, the maximum-to-minimum intensity ratios of the four peaks show a strong dependence on the excitation energy, unlike the case of single-layer graphene (SLG). Our findings thus reveal another interesting aspect of electron-phonon interactions in graphitic systems.

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preprint2013arXiv

Anomalous Optical Phonon Splittings in Sliding Bilayer Graphene

We study the variations of electron-phonon coupling and their spectroscopic consequences in response to sliding of two layers in bilayer graphene using first-principles calculations and a model Hamiltonian. Our study shows that the long wave-length optical phonon modes change in a sensitive and unusual way depending on the symmetry as well as the parity of sliding atomic structures and that, accordingly, Raman- and infrared-active optical phonon modes behave differently upon the direction and size of the sliding. The renormalization of phonon modes by the interlayer electronic coupling is shown to be crucial to explain their anomalous behavior upon the sliding. Also, we show that the crystal symmetry change due to the sliding affects the polarized Stokes Raman-scattering intensity, which can be utilized to detect tiny misalignment of graphene layers using spectroscopic tools.

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preprint2013arXiv

Fano resonance in Raman scattering of graphene

Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG.

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preprint2013arXiv

Ideal Strength of Doped Graphene

While the mechanical distortions change the electronic properties of graphene significantly, the effects of electronic manipulation on its mechanical properties have not been known. Using first-principles calculation methods, we show that, when graphene expands isotropically under equibiaxial strain, both the electron and hole doping can maintain or improve its ideal strength slightly and enhance the critical breaking strain dramatically. Contrary to the isotropic expansions, the electron doping decreases the ideal strength as well as critical strain of uniaxially strained graphene while the hole doping increases the both. Distinct failure mechanisms depending on type of strains are shown to be origins of the different doping induced mechanical stabilities. Our findings may resolve a contradiction between recent experimental and theoretical results on the strength of graphene.

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preprint2013arXiv

Origin of Anomalous Water Permeation through Graphene Oxide Membrane

Water inside the low dimensional carbon structures has been considered seriously owing to fundamental interest in its flow and structures as well as its practical impact. Recently, the anomalous perfect penetration of water through graphene oxide membrane was demonstrated although the membrane was impenetrable for other liquids and even gases. The unusual auxetic behavior of graphene oxide in the presence of water was also reported. Here, based on first-principles calculations, we establish atomistic models for hybrid systems composed of water and graphene oxides revealing the anomalous water behavior inside the stacked graphene oxides. We show that formation of hexagonal ice bilayer in between the flakes as well as melting transition of ice at the edges of flakes are crucial to realize the perfect water permeation across the whole stacked structures. The distance between adjacent layers that can be controlled either by oxygen reduction process or pressure is shown to determine the water flow thus highlighting a unique water dynamics in randomly connected two-dimensional spaces.

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preprint2013arXiv

Scattering Theory Approach to Inelastic Transport in Nanoscale Systems

We present a scattering-state description for the non-equilibrium multichannel charge transport in the presence of electron-vibration couplings. It is based on an expansion of scattering orders of eigenchannel states. Examining charge transitions between scattering states, we clarifies competing inelastic and elastic scattering processes, and compare with the interpretation based on the non-equilibrium Green's functions formalism. We also derive a general expression for conductance variations in single-channel systems. It provides a comprehensive picture for the variation including the well-known result, the 0.5 rule, from the aspect of interplay between elastic and inelastic scattering processes.

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preprint2012arXiv

A Computational Investigation of the Catalytic Properties of Graphene Oxide: Exploring Mechanisms Using DFT Methods

Here we describe a computational study undertaken in an effort to elucidate the reaction mechanisms behind the experimentally observed oxidations and hydrations catalyzed by graphene oxide (GO). Using the oxidation of benzyl alcohol to benzaldehyde as a model reaction, density functional theory (DFT) calculations revealed that this reactivity stemmed from the transfer of hydrogen atoms from the organic molecule to the GO surface. In particular, neighbouring epoxide groups decorating GO's basal plane were ring-opened, resulting in the formation of diols, followed by dehydration. Consistent with the experimentally-observed dependence of this chemistry on molecular oxygen, our calculations revealed that the partially reduced catalyst was able to be recharged by molecular oxygen, allowing for catalyst turnover. Functional group-free carbon materials, such as graphite, were calculated to have substantially higher reaction barriers, indicating that the high chemical potential and rich functionality of GO are necessary for the observed reactivity.

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preprint2012arXiv

Covalent functionalization of strained graphene

Enhancement of the chemical activity of graphene is evidenced by first-principles modelling of chemisorption of the hydrogen, fluorine, oxygen and hydroxyl groups on strained graphene. For the case of negative strain or compression, chemisorption of the single hydrogen, fluorine or hydroxyl group is energetically more favourable than those of their pairs on different sublattices. This behaviour stabilizes the magnetism caused by the chemisorption being against its destruction by the pair formations. Initially flat, compressed graphene is shown to buckle spontaneously right after chemisorption of single adatoms. Unlike hydrogenation or fluorination, the oxidation process turns from the endothermic to exothermic for all types of the strain and depends on the direction of applied strains. Such properties will be useful in designing graphene devices utilizing functionalization as well as mechanical strains.

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preprint2012arXiv

Direct Experimental Evidence of Metal-Mediated Etching of Suspended Graphene

Atomic resolution high angle annular dark field imaging of suspended, single-layer graphene, onto which the metals Cr, Ti, Pd, Ni, Al and Au atoms had been deposited was carried out in an aberration corrected scanning transmission electron microscope. In combination with electron energy loss spectroscopy, employed to identify individual impurity atoms, it was shown that nano-scale holes were etched into graphene, initiated at sites where single atoms of all the metal species except for gold come into close contact with the graphene. The e-beam scanning process is instrumental in promoting metal atoms from clusters formed during the original metal deposition process onto the clean graphene surface, where they initiate the hole-forming process. Our observations are discussed in the light of calculations in the literature, predicting a much lowered vacancy formation in graphene when metal ad-atoms are present. The requirement and importance of oxygen atoms in this process, although not predicted by such previous calculations, is also discussed, following our observations of hole formation in pristine graphene in the presence of Si-impurity atoms, supported by new calculations which predict a dramatic decrease of the vacancy formation energy, when SiOx molecules are present.

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preprint2012arXiv

Vortex Dynamics in an Annular Bose-Einstein Condensate

We theoretically show that the topology of a non-simply-connected annular atomic Bose-Einstein condensate enforces the inner surface waves to be always excited with outer surface excitations and that the inner surface modes are associated with induced vortex dipoles unlike the surface waves of a simply-connected one with vortex monopoles. Consequently, under stirring to drive an inner surface wave, a peculiar population oscillation between the inner and outer surface is generated regardless of annulus thickness. Moreover, a new vortex nucleation process by stirring is observed that can merge the inner vortex dipoles and outer vortex into a single vortex inside the annulus. The energy spectrum for a rotating annular condensate with a vortex at the center also reveals the distinct connection of the Tkachenko modes of a vortex lattice to its inner surface excitations.

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preprint2011arXiv

Electronic topological transition in sliding bilayer graphene

We demonstrate theoretically that the topology of energy bands and Fermi surface in bilayer graphene undergoes a very sensitive transition when extremely tiny lateral interlayer shift occurs in arbitrary directions. The phenomenon originates from a generation of effective non-Abelian vector potential in Dirac Hamiltonian by the sliding motions. The characteristics of the transition such as pair annihilations of massless Dirac fermions are dictated by the sliding direction owing to a unique interplay between the effective non-Abelian gauge fields and Berry's phases associated with massless electrons. The transition manifests itself in various measurable quantities such as anomalous density of states, minimal conductivity, and distinct Landau level spectrum.

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preprint2011arXiv

Negative Thermal Expansion Coefficient of Graphene Measured by Raman Spectroscopy

The thermal expansion coefficient (TEC) of single-layer graphene is estimated with temperature-dependent Raman spectroscopy in the temperature range between 200 and 400 K. It is found to be strongly dependent on temperature but remains negative in the whole temperature range, with a room temperature value of -8.0x10^{-6} K^{-1}. The strain caused by the TEC mismatch between graphene and the substrate plays a crucial role in determining the physical properties of graphene, and hence its effect must be accounted for in the interpretation of experimental data taken at cryogenic or elevated temperatures.

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preprint2011arXiv

Oxygen reduction reactions on pure and nitrogen-doped graphene: a first-principles modeling

Based on first principles density functional theory calculations we explored energetics of oxygen reduction reaction over pristine and nitrogen-doped graphene with different amounts of nitrogen doping. The process of oxygen reduction requires one more step then same reaction catalyzed by metals. Results of calculations evidence that for the case of light doped graphene (about 4% of nitrogen) energy barrier for each step is lower than for the same process on Pt surface. In contrast to the catalysis on metal surface the maximal coverage of doped graphene is lower and depends on the corrugation of graphene. Changes of the energy barriers caused by oxygen load and corrugation are also discussed.

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preprint2011arXiv

Strain-dependent Splitting of Double Resonance Raman Scattering Band in Graphene

Under homogeneous uniaxial strains, the Raman 2D band of graphene involving two-phonon double-resonance scattering processes splits into two peaks and they altogether redshift strongly depending on the direction and magnitude of the strain. Through polarized micro- Raman measurements and first-principles calculations, the effects are shown to originate from significant changes in resonant conditions owing to both the distorted Dirac cones and anisotropic modifications of phonon dispersion under uniaxial strains. Quantitative agreements between the calculation and experiment enable us to determine the dominant double- resonance Raman scattering path, thereby answering a fundamental question concerning this key experimental analyzing tool for graphitic systems.

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preprint2010arXiv

Controlling Energy Gap of Bilayer Graphene by Strain

Using the first principles calculations, we show that mechanically tunable electronic energy gap is realizable in bilayer graphene if different homogeneous strains are applied to the two layers. It is shown that the size of energy gap can be simply controlled by adjusting the strength and direction of these strains. We also show that the effect originates from the occurrence of strain-induced pseudo-scalar potentials in graphene. When homogeneous strains with different strengths are applied to each layer of bilayer graphene, transverse electric fields across the two layers can be generated without any external electronic sources, thereby opening an energy gap. The results demonstrate a simple mechanical method of realizing pseudo-electromagnetism in graphene and suggest a maneuverable approach to fabrication of electromechanical devices based on bilayer graphene.

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preprint2010arXiv

Controlling Half-Metallicity of Graphene Nanoribbons by Using a Ferroelectric Polymer

On the basis of first-principles computational approaches, we present a new method to drive zigzag graphene nanoribons (ZGNRs) into the half-metallic state using a ferroelectric material, poly(vinylidene fluoride) (PVDF). Owing to strong dipole moments of PVDFs, the ground state of the ZGNR becomes half-metallic when a critical coverage of PVDFs is achieved on the ZGNR. Since ferroelectric polymers are physisorbed, the direction of the dipole field in PVDFs can be rotated by relatively small external electric fields, and the switching between half-metallic and insulating states may be achieved. Our results suggest that, without excessively large external gate electric fields, half-metallic states of ZGNRs are realizable through the deposition of ferroelectric polymers and their electronic and magnetic properties are controllable via noninvasive mutual interactions.

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preprint2010arXiv

Effects of Strain on Electronic Properties of Graphene

We present first-principles calculations of electronic properties of graphene under uniaxial and isotropic strains, respectively. The semi-metallic nature is shown to persist up to a very large uniaxial strain of 30% except a very narrow strain range where a tiny energy gap opens. As the uniaxial strain increases along a certain direction, the Fermi velocity parallel to it decreases quickly and vanishes eventually, whereas the Fermi velocity perpendicular to it increases by as much as 25%. Thus, the low energy properties with small uniaxial strains can be described by the generalized Weyl's equation while massless and massive electrons coexist with large ones. The work function is also predicted to increase substantially as both the uniaxial and isotropic strain increases. Hence, the homogeneous strain in graphene can be regarded as the effective electronic scalar potential.

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preprint2010arXiv

Multiple Localized States and Magnetic Orderings in Partially Open Zigzag Carbon Nanotube Superlattices: An Ab Initio Study

Using first-principles calculations, we examine the electronic and magnetic properties of partially open zigzag carbon nanotube (CNT) superlattices. It is found that depending on their opening degree, these superlattices can exhibit multiple localized states around the Fermi energy. More importantly, some electronic states confined in some parts of the structure even have special magnetic orderings. We demonstrate that, as a proof of principle, some partially open zigzag CNT superlattices are by themselves giant (100%) magnetoresistive devices. Furthermore, the localized(and spin-polarized) states as well as the band gaps of the superlattices could be further modulated by external electric fields perpendicular to the tube axis, and a bias voltage along the tube axis may be used to control the conductance of two spin states. We believe that these results will open the way to the production of novel nanoscale electronic and spintronic devices.

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