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Seong Won Cho

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cond-mat.mtrl-sci cond-mat.dis-nn cond-mat.str-el Emerging Technologies

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preprint2019arXiv

Phase Instability amid Dimensional Crossover in Artificial Oxide Crystal

Artificial crystals synthesized by atomic-scale epitaxy provides the ability to control the dimensions of the quantum phases and associated phase transitions via precise thickness modulation. In particular, reduction in dimensionality via quantized control of atomic layers is a powerful approach to revealing hidden electronic and magnetic phases. Here, we demonstrate a dimensionality-controlled and induced metal-insulator transition (MIT) in atomically designed superlattices by synthesizing a genuine two dimensional (2D) SrRuO3 crystal with highly suppressed charge transfer. The tendency to ferromagnetically align the spins in SrRuO3 layer diminishes in 2D as the interlayer exchange interaction vanishes, accompanying the 2D localization of electrons. Furthermore, electronic and magnetic instabilities in the two SrRuO3 unit cell layers induce a thermally-driven MIT along with a metamagnetic transition.

preprint2018arXiv

A highly scalable and energy-efficient artificial neuron using an Ovonic Threshold Switch (OTS) featuring the spike-frequency adaptation and chaotic activity

As an essential building block for developing a large-scale brain-inspired computing system, we present a highly scalable and energy-efficient artificial neuron device composed of an Ovonic Threshold Switch (OTS) and a few passive electrical components. It shows not only the basic integrate-and-fire (I&F) function and the rate coding ability, but also the spike-frequency adaptation (SFA) property and the chaotic activity. The latter two, being the most common features found in the mammalian cortex, are particularly essential for the realization of the energy-efficient signal processing, learning, and adaptation to environments1-3, but have been hard to achieve up to now. Furthermore, with our OTS-based neuron device employing the reservoir computing technique combined with delayed feedback dynamics, spoken-digit recognition task has been performed with a considerable degree of recognition accuracy. From a comparison with a Mott memristor-based artificial neuron device, it is shown that the OTS-based artificial neuron is much more energy-efficient by about 100 times. These results show that our OTS-based artificial neuron device is promising for the application in the development of a large-scale brain-inspired computing system.

preprint2016arXiv

Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films

A topological insulator (TI), a new quantum state featured with the topologically-protected surface state (TSS) originating from its peculiar topology in band structure, has attracted much interest due to academic and practical importance. Nonetheless, a large contribution of the bulk conduction, induced by unintended doping by defects, has hindered the characterization of the unique surface state and the utilization of it into a device. To resolve this problem, we have investigated the transport properties of epitaxial Bi2-xSnxTe3 thin films with varying x. With the bulk conduction being strongly suppressed, the TSS is separately characterized, resulting in a large phase relaxation length of ~250 nm at 1.8 K, a record-high value in TIs. In addition, the magnetoresistance ratio (MR) has shown a non-monotonic temperature dependence with a maximum value at an elevated temperature depending on x. These results are associated with the compensation of carriers and, we believe, provide an important step for the application of topological insulators for developing novel functional devices based on the topological surface states.