Researcher profile

Hu Young Jeong

Hu Young Jeong contributes to research discovery and scholarly infrastructure.

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Published work

11 published item(s)

preprint2025arXiv

Prospects to bypass nonlocal phenomena in metals using phonon-polaritons

Electromagnetic design relies on an accurate understanding of light-matter interactions, yet often overlooks electronic length scales. Under extreme confinement, this omission can lead to nonclassical effects, such as nonlocal response. Here, we use mid-infrared phonon-polaritons in hexagonal boron nitride (hBN) screened by monocrystalline gold flakes to push the limits of nanolight confinement unobstructed by nonlocal phenomena, even when the polariton phase velocity approaches the Fermi velocities of electrons in gold. We employ near-field imaging to probe polaritons in nanometre-thin crystals of hBN on gold and extract their complex propagation constant, observing effective indices exceeding 90. We further show the importance of sample characterisation by revealing a thin low-index interfacial layer naturally forming on monocrystalline gold. Our experiments address a fundamental limitation posed by nonlocal effects in van der Waals heterostructures and outline a pathway to bypass their impact in high-confinement regimes.

preprint2022arXiv

Reversibly controlled ternary polar states and ferroelectric bias promoted by boosting square-tensile-strain

Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO$_{3}$, which boosts square-tensile-strain to BaTiO$_{3}$ and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti$^{3+}$ ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals ternary in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, we experimentally demonstrate that three electrically controlled polar-ordering states lead to switchable and non-volatile dielectric states for application of non-destructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates.

preprint2022arXiv

Unconventional interlayer exchange coupling via chiral phonons in synthetic magnetic oxide heterostructures

Chiral symmetry breaking of phonons plays an essential role in emergent quantum phenomena owing to its strong coupling to spin degree of freedom. However, direct experimental evidence of the chiral phonon-spin coupling is lacking. In this study, we report a chiral phonon-mediated interlayer exchange interaction in atomically controlled ferromagnetic metal (SrRuO3)-nonmagnetic insulator (SrTiO3) heterostructures. Owing to the unconventional interlayer exchange interaction, we have observed rotation of magnetic moments as a function of nonmagnetic insulating spacer thickness, resulting in a spin spiral state. The chiral phonon-spin coupling is further confirmed by phonon Zeeman effects. The existence of the chiral phonons and their interplay with spins along with our atomic-scale heterostructure approach open a window to unveil the crucial roles of chiral phonons in magnetic materials.

preprint2020arXiv

Highly ordered lead-free double perovskite halides by design

Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to lead-based perovskite halides. Recently, single-crystalline double perovskite halides were synthesized, and their intriguing functional properties were demonstrated. Despite such pioneering works, lead-free double perovskite halides with better crystallinity are still in demand for applications to novel optoelectronic devices. Here, we realized highly crystalline Cs2AgBiBr6 single crystals with a well-defined atomic ordering on the microscopic scale. We avoided the formation of Ag vacancies and the subsequent secondary Cs3Bi2Br9 by manipulating the initial chemical environments in hydrothermal synthesis. The suppression of Ag vacancies allows us to reduce the trap density in the as-grown crystals and to enhance the carrier mobility further. Our design strategy is applicable for fabricating other lead-free halide materials with high crystallinity.

preprint2020arXiv

Propagation control of octahedral tilt in SrRuO3 via artificial heterostructuring

Bonding geometry engineering of metal-oxygen octahedra is a facile way of tailoring various functional properties of transition metal oxides. Several approaches, including epitaxial strain, thickness, and stoichiometry control, have been proposed to efficiently tune the rotation and tilting of the octahedra, but these approaches are inevitably accompanied by unnecessary structural modifications such as changes in thin-film lattice parameters. In this study, we propose a method to selectively engineer the octahedral bonding geometries, while maintaining other parameters that might implicitly influence the functional properties. A concept of octahedral tilt propagation engineering has been developed using atomically designed SrRuO3/SrTiO3 superlattices. In particular, the propagation of RuO6 octahedral tilting within the SrRuO3 layers having identical thicknesses was systematically controlled by varying the thickness of adjacent SrTiO3 layers. This led to a substantial modification in the electromagnetic properties of the SrRuO3 layer, significantly enhancing the magnetic moment of Ru. Our approach provides a method to selectively manipulate the bonding geometry of strongly correlated oxides, thereby enabling a better understanding and greater controllability of their functional properties.

preprint2019arXiv

Negative Fermi-level Pinning Effect of Metal/n-GaAs(001) Junction with Graphene Interlayer

It is demonstrated that the electric dipole layer due to the overlapping of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in metal/graphene/n-GaAs(001) junction. The graphene interlayer takes a role of diffusion barrier preventing the atomic intermixing at interface and preserving the low interface-trap density region. The negative Fermi-level pinning effect is supported by the Schottky barrier decreasing as metal work-function increasing. Our work shows that the graphene interlayer can invert the effective work-function of metal between $high$ and $low$, making it possible to form both Schottky and Ohmic-like contacts with identical (particularly $high$ work-function) metal electrodes on a semiconductor substrate possessing low surface-state density.

preprint2019arXiv

Phase Instability amid Dimensional Crossover in Artificial Oxide Crystal

Artificial crystals synthesized by atomic-scale epitaxy provides the ability to control the dimensions of the quantum phases and associated phase transitions via precise thickness modulation. In particular, reduction in dimensionality via quantized control of atomic layers is a powerful approach to revealing hidden electronic and magnetic phases. Here, we demonstrate a dimensionality-controlled and induced metal-insulator transition (MIT) in atomically designed superlattices by synthesizing a genuine two dimensional (2D) SrRuO3 crystal with highly suppressed charge transfer. The tendency to ferromagnetically align the spins in SrRuO3 layer diminishes in 2D as the interlayer exchange interaction vanishes, accompanying the 2D localization of electrons. Furthermore, electronic and magnetic instabilities in the two SrRuO3 unit cell layers induce a thermally-driven MIT along with a metamagnetic transition.

preprint2010arXiv

Role of interface reaction on resistive switching of Metal/a-TiO2/Al RRAM devices

For the clear understanding of the role of interface reaction between top metal electrode and titanium oxide layer, we investigated the effects of various top metals on the resistive switching in Metal/a-TiO2/Al devices. The top Al device with the highest oxygen affinity showed the best memory performance, which is attributed to the fast formation of interfacial layer (Al-Ti-O), as confirmed by high resolution transmission electron microscopy and electron dispersive spectroscopy. Hence, we concluded that the interface layer, created by the redox reaction between top metal electrode and TiO2 layer, plays a crucial role in bipolar resistive switching behaviors of metal/TiO2/Al systems.

preprint2009arXiv

Bipolar resistive switching characteristics of poly(3,4-ethylene-dioxythiophene): poly(styrenesulfonate) thin film

We investigated the reversible resistive switching of poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) thin films sandwiched between Al electrodes. The J-V sweep curve showed a hysteretic behavior which depends on the polarity of the applied voltage bias. From the analysis of I-V curves, it was revealed that the charge transport through the junction was governed by the bulk space-charge-limited conduction (SCLC) model. Using transmission electron microscopy (TEM) analysis, it was confirmed that the initial high resistance state of PEDOT:PSS films is related with the segregation of PSS- chains induced by redox reaction between a Al metal electrode and PEDOT:PSS film. Positive space charges present on the top region of PEDOT:PSS films can be proposed as a possible trap centers of electron trapping and detrapping process.

preprint2009arXiv

Bipolar resistive switching in amorphous titanium oxide thin films

Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by a plasma-enhanced atomic layer deposition method between two aluminum electrodes. We found a bipolar resistive switching behavior in the high temperature region (> 140 K), and two activation energies of shallow traps, 0.055 eV and 0.126 eV in the ohmic current regime. We also proposed that the bipolar resistive switching of amorphous TiO2 thin films is governed by the transition of conduction mode from a bulk-limited SCLC model (Off state) to an interface-limited Schottky emission (On state), generated by the ionic movement of oxygen vacancies.

preprint2009arXiv

Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical TEM technique using energy-filtering transmission electron microscopy and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at top interface by an oxidation-reduction reaction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films.