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Suyoun Lee

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Published work

6 published item(s)

preprint2025arXiv

Ovonic switches enable energy-efficient dendrite-like computing

Over the last decade, dendrites within individual biological neurons, which were previously thought to generally perform information pooling and networking, have now been shown to express complex temporal dynamics, Boolean-like logic, arithmetic, signal discrimination, and edge detection for image and sound recognition. Mimicking this rich functional density could offer a powerful primitive for neuromorphic computing, which has sought to replace the aging digital computing paradigms using biological inspirations. Here, using electrically driven Ovonic threshold switching in Sb-Te-doped GeSe, we demonstrate a single two-terminal component capable of self-sustained dynamics and universal Boolean logic, in addition to XOR operations (which is traditionally thought to require a network of active components). We then employ logic-driven dynamics in a single component to detect and estimate the gradients of edges in images, a task that otherwise requires elaborate circuits. A network of Ovonic switches exhibits properties of a half adder and a full adder, in addition to discriminative logic accommodating inhibitory and excitatory signals. We show that this computational primitive is not only seemingly simpler, but also offers many orders of magnitude improved energy efficiency compared to prevailing digital solutions. As such, this work paves the path for potentially emulating dendrites for efficient post-digital neuromorphic computing.

preprint2019arXiv

Phase Instability amid Dimensional Crossover in Artificial Oxide Crystal

Artificial crystals synthesized by atomic-scale epitaxy provides the ability to control the dimensions of the quantum phases and associated phase transitions via precise thickness modulation. In particular, reduction in dimensionality via quantized control of atomic layers is a powerful approach to revealing hidden electronic and magnetic phases. Here, we demonstrate a dimensionality-controlled and induced metal-insulator transition (MIT) in atomically designed superlattices by synthesizing a genuine two dimensional (2D) SrRuO3 crystal with highly suppressed charge transfer. The tendency to ferromagnetically align the spins in SrRuO3 layer diminishes in 2D as the interlayer exchange interaction vanishes, accompanying the 2D localization of electrons. Furthermore, electronic and magnetic instabilities in the two SrRuO3 unit cell layers induce a thermally-driven MIT along with a metamagnetic transition.

preprint2018arXiv

A highly scalable and energy-efficient artificial neuron using an Ovonic Threshold Switch (OTS) featuring the spike-frequency adaptation and chaotic activity

As an essential building block for developing a large-scale brain-inspired computing system, we present a highly scalable and energy-efficient artificial neuron device composed of an Ovonic Threshold Switch (OTS) and a few passive electrical components. It shows not only the basic integrate-and-fire (I&F) function and the rate coding ability, but also the spike-frequency adaptation (SFA) property and the chaotic activity. The latter two, being the most common features found in the mammalian cortex, are particularly essential for the realization of the energy-efficient signal processing, learning, and adaptation to environments1-3, but have been hard to achieve up to now. Furthermore, with our OTS-based neuron device employing the reservoir computing technique combined with delayed feedback dynamics, spoken-digit recognition task has been performed with a considerable degree of recognition accuracy. From a comparison with a Mott memristor-based artificial neuron device, it is shown that the OTS-based artificial neuron is much more energy-efficient by about 100 times. These results show that our OTS-based artificial neuron device is promising for the application in the development of a large-scale brain-inspired computing system.

preprint2016arXiv

Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films

A topological insulator (TI), a new quantum state featured with the topologically-protected surface state (TSS) originating from its peculiar topology in band structure, has attracted much interest due to academic and practical importance. Nonetheless, a large contribution of the bulk conduction, induced by unintended doping by defects, has hindered the characterization of the unique surface state and the utilization of it into a device. To resolve this problem, we have investigated the transport properties of epitaxial Bi2-xSnxTe3 thin films with varying x. With the bulk conduction being strongly suppressed, the TSS is separately characterized, resulting in a large phase relaxation length of ~250 nm at 1.8 K, a record-high value in TIs. In addition, the magnetoresistance ratio (MR) has shown a non-monotonic temperature dependence with a maximum value at an elevated temperature depending on x. These results are associated with the compensation of carriers and, we believe, provide an important step for the application of topological insulators for developing novel functional devices based on the topological surface states.

preprint2015arXiv

Resonant tunneling in a quantum oxide superlattice

Resonant tunnelling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunnelling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. Here we show that a deliberately designed transition metal oxide superlattice exhibits a resonant tunnelling behaviour with a clear negative differential resistance. The tunnelling occurred through an atomically thin, lanthanum δ-doped SrTiO3 layer, and the negative differential resistance was realized on top of the bipolar resistance switching typically observed for perovskite oxide junctions. This combined process resulted in an extremely large resistance ratio (~10^5) between the high and low-resistance states. The unprecedentedly large control found in atomically thin δ-doped oxide superlattices can open a door to novel oxide-based high-frequency logic devices.

preprint2012arXiv

Fractionally delta-doped oxide superlattices for higher carrier mobilities

A 2D electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional delta-doping to control the interface's composition in LaxSr1-xTiO3/SrTiO3 artificial oxide superlattices, the filling-controlled 2D insulator-metal transition can be realized. The atomic-scale control of d-electron band filling, which in turn contributes to the tuning of effective mass and density of the charge carriers, is found to be a fascinating route to substantially enhanced carrier mobilities.