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Researcher profile

S. V. Svechnikov

S. V. Svechnikov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2010arXiv

Defect driven ferroelectricity and magnetism in nanocrystalline KTaO3

Nominally pure nanocrystalline KTaO3 was thoroughly investigated by micro-Raman and magnetic resonance spectroscopic techniques. In all samples the defect driven ferroelectricity and magnetism are registered. Both ordering states are suggested to appear due to the iron atoms and oxygen vacancies. The concentration of defects was estimated to be 0.04 and 0.06-0.1 mole %, respectively. Note that undoped single crystals of KTaO3 are nonmagnetic and have never exhibited ferromagnetic properties. The results enable us to refer a nanosized KTa(Fe)O3 to the class of multiferroics and assume that it could perform the magnetoelectric effect at T<29 K. It was also established that the critical concentration of impurity defects necessary to provoke the appearance of the new phase states in the material strongly correlates with the size of the particle; as the size of the particle decreases, the critical concentration decreases as well.

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preprint2010arXiv

Local Probing of Mesoscopic Physics of Ferroelectric Domain Walls

Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range of polarization reversal behaviors in the vicinity of the initially flat 180°ferroelectric domain wall. The nucleation bias is found to increase by an order of magnitude from a 2D nucleus at the wall to 3D nucleus in the bulk. The wall is thus significantly ferroelectrically softer than the bulk. The wall profoundly affects switching on length scales of the order of micrometers. The mechanism of correlated switching is analyzed using analytical theory and phase-field modeling. The long-range effect is ascribed to wall bending under the influence of a tip bias well below the bulk nucleation field and placed many micrometers away from the wall. These studies provide an experimental link between the macroscopic and mesoscopic physics of domain walls and atomistic models of nucleation.

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preprint2009arXiv

Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures

Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the inhomogeneous electric field induced by the nanosized tip of the Scanning Probe Microscope (SPM) probe) the thickness and charge of the interface layer drastically changes, it particular the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.

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