Researcher profile

A. M. Rappe

A. M. Rappe contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2015arXiv

Modiffied Schottky emission to explain thickness dependence and slow depolarization in BaTiO$_3$ nanowires

We investigate the origin of the depolarization rates in ultrathin adsorbate-stabilized ferroelectric wires. By applying density functional theory calculations and analytic modeling, we demonstrate that the depolarization results from the leakage of charges stored at the surface adsorbates, which play an important role in the polarization stabilization. The depolarization speed varies with thickness and temperature, following several complex trends. A comprehensive physical model is presented, in which quantum tunneling, Schottky emission and temperature dependent electron mobility are taken into consideration. This model simulates experimental results, validating the physical mechanism. We also expect that this improved tunneling-Schottky emission model could be applied to predict the retention time of polarization and the leakage current for various ferroelectric materials with different thicknesses and temperatures.

preprint2012arXiv

Dirac semimetal in three dimensions

In a Dirac semimetal, the conduction and valence bands contact only at discrete (Dirac) points in the Brillouin zone (BZ) and disperse linearly in all directions around these critical points. Including spin, the low energy effective theory around each critical point is a four band Dirac Hamiltonian. In two dimensions (2D), this situation is realized in graphene without spin-orbit coupling. 3D Dirac points are predicted to exist at the phase transition between a topological and a normal insulator in the presence of inversion symmetry. Here we show that 3D Dirac points can also be protected by crystallographic symmetries in particular space-groups and enumerate the criteria necessary to identify these groups. This reveals the possibility of 3D analogs to graphene. We provide a systematic approach for identifying such materials and present ab initio calculations of metastable β-cristobalite BiO_2 which exhibits Dirac points at the three symmetry related X points of the BZ.

preprint2010arXiv

Local Probing of Mesoscopic Physics of Ferroelectric Domain Walls

Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range of polarization reversal behaviors in the vicinity of the initially flat 180°ferroelectric domain wall. The nucleation bias is found to increase by an order of magnitude from a 2D nucleus at the wall to 3D nucleus in the bulk. The wall is thus significantly ferroelectrically softer than the bulk. The wall profoundly affects switching on length scales of the order of micrometers. The mechanism of correlated switching is analyzed using analytical theory and phase-field modeling. The long-range effect is ascribed to wall bending under the influence of a tip bias well below the bulk nucleation field and placed many micrometers away from the wall. These studies provide an experimental link between the macroscopic and mesoscopic physics of domain walls and atomistic models of nucleation.