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E. A. Eliseev contributes to research discovery and scholarly infrastructure.
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Published work
The review covers the theoretical and experimental results obtained in the recent years by the scientists with the help of comprehensive investigation of nanoferroics and multiferroics. The main attention will be paid to spontaneous flexoeffects and reentrant phase in nanoferroics as well as to a recently discovered giant magnetoelectric effect in multiferroics.
Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and density-functional calculations. Cation displacements are observed at the interface, indicative of a dipole-like electric field even though both materials are nominally metallic. The observed displacements are reproduced by theory if O vacancies are present in the near-interface LSMO layers. The results suggest that atomic-scale structural mapping can serve as a quantitative indicator of the presence of O vacancies at interfaces.
Using the symmetry theory we analyze of the flexomagnetic effect in all 90 magnetic classes and showed that 69 of them are flexomagnetic. Then we explore how the symmetry breaking, inevitably present in the vicinity of the surface, changes the local symmetry and thus the form of the flexomagnetic tensors. All possible surface magnetic classes (in the number of 19) were obtained from the 90 bulk magnetic classes for the surface cuts 001, 010 and 100 types. It appeared that all 90 bulk magnetic classes become flexomagnetic, piezomagnetic and piezoelectric in the vicinity of surface. Using the free energy approach, we show that the flexomagnetic effect leads to a new type of flexo-magnetoelectric (FME) coupling in nanosized and bulk materials, in all spatial regions, where the polarization and (anti)magnetization vectors are spatially inhomogeneous due to external or internal forces. The linear FME coupling, proportional to the product of the gradients of (anti)magnetization and polarization, flexoelectric and flexomagnetic tensors, is significant in nanosized ferroelectrics-(anti)ferromagnetics, where gradients of the polarization and magnetization obligatory exist. The spontaneous FME coupling induced by the spatial confinement give rise to the size-dependent linear magnetoelectric coupling in nanosized ferroelectrics-(anti)ferromagnetics. We show that the flexomagnetic effect may lead to improper ferroelectricity in bulk (anti)ferromagnetics via the linear and nonlinear FME coupling. Inhomogeneous spontaneous polarization is induced by the (anti)magnetization gradient, which exists in all spatial regions, where polarization varies and (anti)magnetization vector changes its direction. The gradient can be induced by the surface influence as well as by external strain via e.g. the sample bending.
Nanoscale enables a broad range of electromechanical coupling mechanisms that are forbidden or negligible in the materials. We conduct a theoretical study of the electromechanical response of thin paraelectric films with mobile vacancies (or ions) paradigmatic for capacitor-type measurements in X-ray scattering, piezoresponse force microscopy (PFM), and electrochemical strain microscopy (ESM). Using quantum paraelectric SrTiO3 film as a model material with well known electromechanical, electronic and electrochemical properties, we evaluate the contributions of electrostriction, Maxwell stress, flexoelectric effect, deformation potential and compositional Vegard strains caused by mobile vacancies (or ions) and electrons to the electromechanical response. The local electromechanical response manifests strong size effects, the scale of which is determined by the ratio of the SrTiO3 film thickness and PFM/ESM tip size to the carriers screening radius. Due to the strong dielectric nonlinearity effect inherent in quantum paraelectrics, the dependence of the SrTiO3 film electromechanical response on applied voltage demonstrates a pronounced crossover from the linear to the quadratic law and then to the sub-linear law with a factor of 2/3 under the voltage increase. The temperature dependence of the electromechanical response as determined by the interplay between the dielectric susceptibility and the screening radius is non-monotonic and has a pronounced maxima, the position and width of which can be tuned by film thickness. This study provides a comparative framework for analysis of electromechanical coupling in the non-piezoelectric nanosystems.
Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range of polarization reversal behaviors in the vicinity of the initially flat 180°ferroelectric domain wall. The nucleation bias is found to increase by an order of magnitude from a 2D nucleus at the wall to 3D nucleus in the bulk. The wall is thus significantly ferroelectrically softer than the bulk. The wall profoundly affects switching on length scales of the order of micrometers. The mechanism of correlated switching is analyzed using analytical theory and phase-field modeling. The long-range effect is ascribed to wall bending under the influence of a tip bias well below the bulk nucleation field and placed many micrometers away from the wall. These studies provide an experimental link between the macroscopic and mesoscopic physics of domain walls and atomistic models of nucleation.
We performed analytical calculations of the current-voltage and strain-voltage response of the heterostructure like "charged SPM tip electrode / gap / ionic-semiconductor film" caused by the local changes of (a) ions concentration (stoichiometry contribution); (b) acceptors (donors) charge state (recharging contribution via ionic radius variation); (c) free electrons (holes) concentration (electron-phonon coupling via the deformation potential). The contribution (b) into the strain-voltage SPM was not calculated previously, while the contribution (c) was not even predicted before, while our estimations performed for correlated oxides show that strength of (c) appeared comparable with (a,b). For the case of ion-blocking tip and substrate electrode mainly the changes in holes (electrons) concentration contribute into the voltage-dependent mechanical displacement of the film surface, directly registered by strain SPM. Thus, we predict that the SPM measurements of the ionic semiconductor surface displacement could provide important information about the local changes of the acceptors (donors) charge state and electron (hole)-phonon correlations via the deformation potential. We obtained the great variety of the nonlinear static and dynamic current-voltage and strain-voltage hysteresis loops in the ionic semiconductor thin film with mobile acceptors (donors) and holes (electrons). Some types of the current-voltage hysteresis with pronounced memory window and double loops are observed experimentally in the correlated oxides and resistive switching materials like p-La1-xSrxMnO3-d and La1-xSrxCoO3-d, while predicted strain-voltage hysteresis of piezoelectric-like and butterfly-like shape requires experimental justification by SPM.
Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the inhomogeneous electric field induced by the nanosized tip of the Scanning Probe Microscope (SPM) probe) the thickness and charge of the interface layer drastically changes, it particular the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.