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E. A. Eliseev

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Published work

30 published item(s)

preprint2016arXiv

Surface and finite size effects impact of the phase diagrams, polar and dielectric properties of (Sr,Bi)Ta2O9 ferroelectric nanoparticles

In the framework of the thermodynamic approach Landau-Ginzburg-Devonshire (LGD) combined with the equations of electrostatics, we investigated the effect of polarization surface screening on finite size effects of the phase diagrams, polar and dielectric properties of ferroelectric nanoparticles of different shapes. We obtained and analyzed the analytical results for the dependences of the ferroelectric phase transition temperature, critical size, spontaneous polarization and thermodynamic coercive field on the shape and size of nanoparticles. The pronounced size effect of these characteristics on the scaling parameter, the ratio of the particle characteristic size to the length of the surface screening, was revealed. Also our modeling predicts a significant impact of the flexo-chemical effect (that is a joint action of flexoelectric effect and chemical pressure) on the temperature of phase transition, polar and dielectric properties of nanoparticles when their chemical composition deviates from the stoichiometric one. We showed on the example of the stoichiometric nanosized and fine SrBi2Ta2O9 particles that except the vicinity of the critical size, where the system splitting into domains has an important role, results of analytical calculation of the spontaneous polarization have little difference from the numerical ones. We revealed a strong impact of the flexo-chemical effect on the phase transition temperature, polar and dielectric properties of SryBi2+xTa2O9 nanoparticles when the ratio Sr/Bi deviates from the stoichiometric value of 0.5 from 0.35 to 0.65. From the analysis of experimental data we derived the parameters of the theory, namely coefficients of expansion of the LGD functional, contribution of flexo-chemical effect and the length of the surface screening.

preprint2015arXiv

Room-temperature paramagnetoelectric effect in magnetoelectric multiferroics Pb(Fe1/2Nb1/2)O3 and its solid solution with PbTiO3

We have observed the magnetoelectric response at room temperature and above in high-resistive ceramics made of multiferroic Pb(Fe1/2Nb1/2)O3 (PFN) and PFN-based solid solution 0.91PFN-0.09PbTiO3 (PFN-PT). The value of the paramagnetoelectric (PME) coefficient shows a pronounced maximum near the ferroelectric-to-paraelectric phase transition temperature, T_C, and then decreases sharply to zero for T>T_C. The maximal PME coefficient in PFN is about 4x10(-18) s/A. The theoretical description of the PME effect, within the framework of a Landau theory of phase transitions allowing for realistic temperature dependences of spontaneous polarization, dielectric and magnetic susceptibilities, qualitatively reproduces well the temperature dependence of the PME coefficient. In particular, the Landau theory predicts the significant increase of the PME effect at low temperatures and near the temperature of the paraelectric-to-ferroelectric phase transition, since the PME coefficient is equal to the product of the spontaneous polarization, dielectric permittivity, square of magnetic susceptibility and the coefficient quantifying the strength of the biquadratic magnetoelectric coupling

preprint2014arXiv

Could the Vegard strains govern extrinsic size effects in nanoparticles?

In the paper we propose a theoretical model that takes into account Vegard strains and perform a detailed quantitative comparison of the theoretical results with experimental ones for quasispherical nanoparticles, which reveal the essential (about 100 K) increase of the transition temperature in spherical nanoparticles in comparison with bulk crystals. The average radius of nanoparticles was about 25 nm, they consist of K(Ta,Nb)O3 solid solution, where KTaO3 is a quantum paraelectric, while KNbO3 is a ferroelectric.From the comparison between the theory and experiment we unambiguously established the leading contribution of Vegard strains into the extrinsic size effect in ferroelectric nanoparticles. We determined the dependence of Vegard strains on the content of Nb and reconstructed the Curie temperature dependence on the content of Nb using this dependence. Appeared that the dependence of the Curie temperature on the Nb content becomes nonmonotonic one for the small (< 20 nm) elongated K(Ta,Nb)O3 nanoparticles. We established that the accumulation of intrinsic and extrinsic defects near the surface can play the key role in the physical origin of extrinsic size effect in ferroelecric nanoparticles and govern its main features.

preprint2014arXiv

Effect of annealing on the charge-voltage characteristics of the SrBi2(Ta,Nb)2O9 films

The effect of changes of the Nb content and annealing on charge vs. voltage and current vs. voltage characteristics of SrBi2(Ta,Nb)2O9 film was studied theoretically and experimentally. Theoretical modeling, which takes into account the mobile charged donors impact on the features of charge vs. voltage and current vs. voltage characteristics of ferroelectric semiconductor films, revealed the changes of conductivity value and ferroelectric parameters. The results of theoretical analysis and experimental results are in qualitative agreement.

preprint2014arXiv

Finite size effects of hysteretic dynamics in multi-layer graphene on ferroelectric

The origin and influence of finite size effects on the nonlinear dynamics of space charge stored by multi layer graphene on ferroelectric and the resistivity of graphene channel were analyzed using self-consistent continuum media approach. Revealed size effects peculiarities are governed by the relations between the thicknesses of multi layer graphene, ferroelectric film and dielectric layer between them. Appearance of charge and electroresistance hysteresis loops and their versatility steam from the interplay of polarization reversal dynamics in alternating electric field and its incomplete screening, which features are mostly determined by the dielectric layer thickness. We further investigate the effects of spatially nonuniform ferroelectric domain structures on graphene layer conductivity and predict its dramatic increase under the transition from multi to single domain state in ferroelectric. The intriguing effects can open new possibilities for graphene based sensors and explore the physical mechanisms underlying the operation of graphene field effect transistor with ferroelectric gating.

preprint2014arXiv

Polar Properties and Hysteresis Loops in Multilayered Thin Films Ferroelectric/Virtual Ferroelectric

In the framework of Landau--Ginzburg--Devonshire (LGD) phenomenological theory, the influence of misfit strains, surface energy, and finite-size effects on phase diagrams, polar properties, and hysteresis loops has been calculated for multilayered thin films of the type ferroelectric/virtual ferroelectric. The influence of elastic deformations that arise at the interface thin film--substrate owing to a mismatch between the lattice constants in the film and the substrate on the phase diagrams of multilayered thin films virtual ferroelectric SrTiO$_{3}$/ferroelectric BaTiO$_{3}$ has been studied for the first time. In contrast to bulk BaTiO$_{3}$, in which only four phases (cubic, tetragonal, orthorhombic, and rhombohedral) can exist, it turned out that six thermodynamically stable BaTiO$_{3}$ phases (paraelectric phase and tetragonal (FEc), two monoclinic (FEaac and FEac), and two orthorhombic (FEa and FEaa) ferroelectric phases) can exist in multilayered SrTiO$_{3}$/BaTiO$_{3}$ films. The main polar properties of hysteresis loops (shape, coercive field, and spontaneous polarization) in thin multilayered SrTiO$_{3}$/BaTiO$_{3}$ films are calculated. It is shown that the system demonstrates a strong dependence of its polar properties on the thickness of SrTiO$_{3}$ and BaTiO$_{3}$ layers, as well as on the elastic misfit strains, with SrTiO$_{3}$ playing the role of dielectric layer: the thicker the layer, the stronger is the depolarization field, which, in its turn, reduces the spontaneous polarization in the BaTiO$_{3}$ film.

preprint2014arXiv

Self-consistent modelling of nonlinear dynamic ESM microscopy in mixed ionic-electronic conductors

Dynamic Electrochemical Strain Microscopy (ESM) response of mixed ionic-electronic conductors is analysed in the framework of the Thomas-Fermi screening theory and Vegard law with accounting of the steric effects. The emergence of dynamic charge waves and nonlinear deformation of the surface as result of applying probing voltage is numerically explored. 2D maps of the strain and concentration distribution across the mixed ionic-electronic conductor and bias-induced surface displacements for ESM microscopy were calculated. Obtained numerical results can be of applied to quantify ESM response of Li-based solid electroytes, materials with resistive switching and electroactive ferroelectric polymers, which are of potential interest for flexible and high-density non-volatile memory devices.

preprint2012arXiv

Bichiral structure of feroelectric domain wall driven by flexoelectricity

The influence of flexoelectric coupling on the internal structure of neutral domain walls in tetragonal phase of perovskite ferroelectrics is studied. The effect is shown to lower the symmetry of 180-degree walls which are oblique with respect to the cubic crystallographic axes, while {100} and {110} walls stay "untouched". Being of the Ising type in the absence of the flexoelectric interaction, the oblique domain walls acquire a new polarization component with a structure qualitatively different from the classical Bloch-wall structure. In contrast to the Bloch-type walls, where the polarization vector draws a helix on passing from one domain to the other, in the flexoeffect-affected wall, the polarization rotates in opposite directions on the two sides of the wall and passes through zero in its center. Since the resulting polarization profile is invariant upon inversion with respect to the wall center it does not brake the wall symmetry in contrast to the classical Bloch-type walls. The flexoelectric coupling lower the domain wall energy and gives rise to its additional anisotropy that is comparable to that conditioned by the elastic anisotropy. The atomic orderof- magnitude estimates shows that the new polarization component P2 may be comparable with spontaneous polarization Ps, thus suggesting that, in general, the flexoelectric coupling should be mandatory included in domain wall simulations in ferroelectrics. Calculations performed for barium titanate yields the maximal value of the P2, which is much smaller than that of the spontaneous polarization. This smallness is attributed to an anomalously small value of a component of the "strain-polarization" elecrostictive tensor in this material.

preprint2012arXiv

Roto-flexoelectric coupling impact on the phase diagrams and pyroelectricity of thin SrTiO3 films

The influence of the flexoelectric and rotostriction coupling on the phase diagrams of ferroelastic-quantum paraelectric SrTiO3 films was studied using Landau-Ginzburg-Devonshire (LGD) theory. The phase diagrams in coordinates temperature - film thickness were calculated for different epitaxial misfit strains. Tensile misfit strains stimulate appearance of the spontaneous out-of-plane structural order parameter (displacement vector of an appropriate oxygen atom from its cubic position) in the structural phase. Compressive misfit strains stimulate appearance of the spontaneous in-plane structural order parameter. Gradients of the structural order parameter components, which inevitably exist in the vicinity of film surfaces due to the termination and symmetry breaking, induce improper polarization and pyroelectric response via the flexoelectric and rotostriction coupling mechanism. Flexoelectric and rotostriction coupling results in the roto-flexoelectric field that is antisymmetric inside the film, small in the central part of the film, where the gradients of the structural parameter are small, and maximal near the surfaces, where the gradients of the structural parameter are highest. The field induces improper polarization and pyroelectric response. Penetration depths of the improper phases (both polar and structural) can reach several nm from the film surfaces. An improper pyroelectric response of thin films is high enough to be registered with planar-type electrode configurations by conventional pyroelectric methods.

preprint2012arXiv

Surface polar states and pyroelectricity in ferroelastics induced by flexo-roto field

Theoretical analysis based on the Landau-Ginzburg-Devonshire (LGD) theory is used to show that the joint action of flexoelectric effect and rotostriction leads to a large spontaneous in-plane polarization (~ 1-5 muC/cm2) and pyroelectric coefficient (~10^-3 C/m2K) in the vicinity of surfaces of otherwise non-ferroelectric ferroelastics, such as SrTiO3, with static octahedral rotations. The origin of the improper polarization and pyroelectricity is an electric field we name flexo-roto field whose strength is proportional to the convolution of the flexoelectric and rotostriction tensors with octahedral tilts and their gradients. Flexo-roto field should exist at surfaces and interfaces in all structures with static octahedral rotations, and thus it can induce surface polar states and pyroelectricity in a large class of otherwise nonpolar materials.

preprint2011arXiv

Direct Observation of an Interface Dipole between Two Metallic Oxides Caused by Localized Oxygen Vacancies

Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and density-functional calculations. Cation displacements are observed at the interface, indicative of a dipole-like electric field even though both materials are nominally metallic. The observed displacements are reproduced by theory if O vacancies are present in the near-interface LSMO layers. The results suggest that atomic-scale structural mapping can serve as a quantitative indicator of the presence of O vacancies at interfaces.

preprint2011arXiv

Electrochemical Strain Microscopy with Blocking Electrodes: The Role of Electromigration and Diffusion

Electrochemical strains are a ubiquitous feature of solid state ionic devices ranging from ion batteries and fuel cells to electroresistive and memristive memories. Recently, we proposed a scanning probe microscopy (SPM) based approach, referred as electrochemical strain microscopy (ESM), for probing local ionic flows and electrochemical reactions in solids based on bias-strain coupling. In ESM, the sharp SPM tip concentrates the electric field in a small (10-50 nm) region of material, inducing interfacial electrochemical processes and ionic flows. The resultant electrochemical strains are determined from dynamic surface displacement and provide information on local electrochemical functionality. Here, we analyze image formation mechanism in ESM for a special case of mixed electronic-ionic conductor with blocking tip electrode, and determine frequency dependence of response, role of diffusion and electromigration effects, and resolution and detection limits.

preprint2011arXiv

Frequency Dependent Dynamical Electromechanical Response of Mixed Ionic-Electronic Conductors

Frequency dependent dynamic electromechanical response of the mixed ionic-electronic conductor film to a periodic electric bias is analyzed for different electronic and ionic boundary conditions. Dynamic effects of mobile ions concentration (stoichiometry contribution), charge state of acceptors (donors), electron concentration (electron-phonon coupling via the deformation potential) and flexoelectric effect contribution are discussed. A variety of possible nonlinear dynamic electromechanical response of MIEC films including quasi-elliptic curves, asymmetric hysteresis-like loops with pronounced memory window and butterfly-like curves are calculated. The electromechanical response of ionic semiconductor is predicted to be a powerful descriptor of local valence states, band structure and electron-phonon correlations that can be readily measured in the nanoscale volumes and in the presence of strong electronic conductivity.

preprint2011arXiv

Linear magnetoelectric coupling and ferroelectricity induced by the flexomagnetic effect in ferroics

Using the symmetry theory we analyze of the flexomagnetic effect in all 90 magnetic classes and showed that 69 of them are flexomagnetic. Then we explore how the symmetry breaking, inevitably present in the vicinity of the surface, changes the local symmetry and thus the form of the flexomagnetic tensors. All possible surface magnetic classes (in the number of 19) were obtained from the 90 bulk magnetic classes for the surface cuts 001, 010 and 100 types. It appeared that all 90 bulk magnetic classes become flexomagnetic, piezomagnetic and piezoelectric in the vicinity of surface. Using the free energy approach, we show that the flexomagnetic effect leads to a new type of flexo-magnetoelectric (FME) coupling in nanosized and bulk materials, in all spatial regions, where the polarization and (anti)magnetization vectors are spatially inhomogeneous due to external or internal forces. The linear FME coupling, proportional to the product of the gradients of (anti)magnetization and polarization, flexoelectric and flexomagnetic tensors, is significant in nanosized ferroelectrics-(anti)ferromagnetics, where gradients of the polarization and magnetization obligatory exist. The spontaneous FME coupling induced by the spatial confinement give rise to the size-dependent linear magnetoelectric coupling in nanosized ferroelectrics-(anti)ferromagnetics. We show that the flexomagnetic effect may lead to improper ferroelectricity in bulk (anti)ferromagnetics via the linear and nonlinear FME coupling. Inhomogeneous spontaneous polarization is induced by the (anti)magnetization gradient, which exists in all spatial regions, where polarization varies and (anti)magnetization vector changes its direction. The gradient can be induced by the surface influence as well as by external strain via e.g. the sample bending.

preprint2011arXiv

Nanoscale Electromechanics of Paraelectric Materials with Mobile Charges: Size effects and Nonlinearity of Electromechanical Response of SrTiO3 Films

Nanoscale enables a broad range of electromechanical coupling mechanisms that are forbidden or negligible in the materials. We conduct a theoretical study of the electromechanical response of thin paraelectric films with mobile vacancies (or ions) paradigmatic for capacitor-type measurements in X-ray scattering, piezoresponse force microscopy (PFM), and electrochemical strain microscopy (ESM). Using quantum paraelectric SrTiO3 film as a model material with well known electromechanical, electronic and electrochemical properties, we evaluate the contributions of electrostriction, Maxwell stress, flexoelectric effect, deformation potential and compositional Vegard strains caused by mobile vacancies (or ions) and electrons to the electromechanical response. The local electromechanical response manifests strong size effects, the scale of which is determined by the ratio of the SrTiO3 film thickness and PFM/ESM tip size to the carriers screening radius. Due to the strong dielectric nonlinearity effect inherent in quantum paraelectrics, the dependence of the SrTiO3 film electromechanical response on applied voltage demonstrates a pronounced crossover from the linear to the quadratic law and then to the sub-linear law with a factor of 2/3 under the voltage increase. The temperature dependence of the electromechanical response as determined by the interplay between the dielectric susceptibility and the screening radius is non-monotonic and has a pronounced maxima, the position and width of which can be tuned by film thickness. This study provides a comparative framework for analysis of electromechanical coupling in the non-piezoelectric nanosystems.

preprint2011arXiv

Static conductivity of charged domain wall in uniaxial ferroelectric-semiconductors

Using Landau-Ginzburg-Devonshire theory we calculated numerically the static conductivity of both inclined and counter domain walls in the uniaxial ferroelectrics-semiconductors of n-type. We used the effective mass approximation for the electron and holes density of states, which is valid at arbitrary distance from the domain wall. Due to the electrons accumulation, the static conductivity drastically increases at the inclined head-to-head wall by 1 order of magnitude for small incline angles theta pi/40 by up 3 orders of magnitude for the counter domain wall (theta=pi/2). Two separate regions of the space charge accumulation exist across an inclined tail-to-tail wall: the thin region in the immediate vicinity of the wall with accumulated mobile holes and the much wider region with ionized donors. The conductivity across the tail-to-tail wall is at least an order of magnitude smaller than the one of the head-to-head wall due to the low mobility of holes, which are improper carries. The results are in qualitative agreement with recent experimental data for LiNbO3 doped with MgO.

preprint2010arXiv

Anion vacancy driven magnetism in incipient ferroelectric SrTiO3 and KTaO3 nanoparticles

Based on our analytical results [http://arxiv.org/abs/1006.3670], we predict that undoped nanoparticles (size <10-100nm) of incipient ferroelectrics without any magnetic ions can become ferromagnetic even at room temperatures due to the inherent presence of a new type of magnetic defects with spin S=1, namely oxygen vacancies, where the magnetic triplet state is the ground state in the vicinity of the surface (magnetic shell), while the nonmagnetic singlet is the ground state in the bulk material (nonmagnetic core). Consideration of randomly distributed magnetic spins (S=1) had shown that magnetic properties of incipient ferroelectric nanoparticles are strongly size and temperature dependent due to the size and temperature dependence of their dielectric permittivity and the effective Bohr radius proportional to permittivity. The phase diagrams in coordinates temperature - particle radius are considered. In particular, for particle radii less that the critical radius ferromagnetic long-range order appears in a shell region of thickness 5 - 50 nm once the concentration of magnetic defects exceeds the magnetic percolation threshold. The critical radius is calculated in the mean field theory from the condition of the magnetic defects exchange energy equality to thermal energy. For particle radii higher than critical value only the paramagnetic phase is possible. The conditions of the super-paramagnetic state appearance in the assembly of nanoparticles with narrow distribution function of their sizes are discussed also.

preprint2010arXiv

Electromechanical Probing of Ionic Currents in Energy Storage Materials

The electrochemical processes in energy storage materials are generally linked with changes of molar volume of the host compound. Here, the frequency dependent strain response of 1D electrochemically active systems to periodic electric bias is analyzed. The sensitivity and resolution of these electrochemical strain measurements are compared to the current-based electrochemical impedance spectroscopy. The resolution and detection limits of interferometric and atomic force microscopy based systems for probing electrochemical reactions on the nanoscale are analyzed.

preprint2010arXiv

Landau-Ginzburg-Devonshire theory for electromechanical hysteresis loop formation in piezoresponse force microscopy of thin films

Electromechanical hysteresis loop formation in piezoresponse force microscopy of thin ferroelectric films is studied with special emphasis on the effects of tip size and film thickness, as well as dependence on the tip voltage frequency. Here, we use a combination of Landau-Ginzburg-Devonshire (LGD) theory for the description of the local polarization reversal with decoupling approximation for the calculation of the local piezoresponse loops shape, coercive voltages and amplitude. LGD approach enables addressing both thermodynamics and kinetics of hysteresis loop formation. In contrast to the "rigid" ferroelectric approximation, this approach allows for the piezoelectric tensor components dependence on the ferroelectric polarization and dielectric permittivity. This model rationalizes the non-classical shape of the dynamic piezoelectric force microscopy (PFM) loops.

preprint2010arXiv

Local probing of ionic diffusion by electrochemical strain microscopy: spatial resolution and signal formation mechanisms

Electrochemical insertion-deintercalation reactions are typically associated with significant change of molar volume of the host compound. This strong coupling between ionic currents and strains underpins image formation mechanisms in electrochemical strain microscopy (ESM), and allows exploring the tip-induced electrochemical processes locally. Here we analyze the signal formation mechanism in ESM, and develop the analytical description of operation in frequency and time domains. The ESM spectroscopic modes are compared to classical electrochemical methods including potentiostatic and galvanostatic intermittent titration (PITT and GITT), and electrochemical impedance spectroscopy (EIS). This analysis illustrates the feasibility of spatially resolved studies of Li-ion dynamics on the sub-10 nanometer level using electromechanical detection.

preprint2010arXiv

Local Probing of Mesoscopic Physics of Ferroelectric Domain Walls

Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range of polarization reversal behaviors in the vicinity of the initially flat 180°ferroelectric domain wall. The nucleation bias is found to increase by an order of magnitude from a 2D nucleus at the wall to 3D nucleus in the bulk. The wall is thus significantly ferroelectrically softer than the bulk. The wall profoundly affects switching on length scales of the order of micrometers. The mechanism of correlated switching is analyzed using analytical theory and phase-field modeling. The long-range effect is ascribed to wall bending under the influence of a tip bias well below the bulk nucleation field and placed many micrometers away from the wall. These studies provide an experimental link between the macroscopic and mesoscopic physics of domain walls and atomistic models of nucleation.

preprint2010arXiv

Strain-voltage and current-voltage Scanning Probe Microscopy (SPM) response of ionic semiconductor thin films: probing of deformation potential

We performed analytical calculations of the current-voltage and strain-voltage response of the heterostructure like "charged SPM tip electrode / gap / ionic-semiconductor film" caused by the local changes of (a) ions concentration (stoichiometry contribution); (b) acceptors (donors) charge state (recharging contribution via ionic radius variation); (c) free electrons (holes) concentration (electron-phonon coupling via the deformation potential). The contribution (b) into the strain-voltage SPM was not calculated previously, while the contribution (c) was not even predicted before, while our estimations performed for correlated oxides show that strength of (c) appeared comparable with (a,b). For the case of ion-blocking tip and substrate electrode mainly the changes in holes (electrons) concentration contribute into the voltage-dependent mechanical displacement of the film surface, directly registered by strain SPM. Thus, we predict that the SPM measurements of the ionic semiconductor surface displacement could provide important information about the local changes of the acceptors (donors) charge state and electron (hole)-phonon correlations via the deformation potential. We obtained the great variety of the nonlinear static and dynamic current-voltage and strain-voltage hysteresis loops in the ionic semiconductor thin film with mobile acceptors (donors) and holes (electrons). Some types of the current-voltage hysteresis with pronounced memory window and double loops are observed experimentally in the correlated oxides and resistive switching materials like p-La1-xSrxMnO3-d and La1-xSrxCoO3-d, while predicted strain-voltage hysteresis of piezoelectric-like and butterfly-like shape requires experimental justification by SPM.

preprint2010arXiv

Surface-induced magnetism of the solids with impurities and vacancies

Using the quantum-mechanical approach combined with the image charge method we calculated the lowest energy levels of the impurities and neutral vacancies with two electrons or holes located in the vicinity of flat surface of different solids. We obtained that the magnetic triplet state is the ground state of the impurities and neutral vacancies in the vicinity of surface, while the nonmagnetic singlet is the ground state in the bulk for e.g. He atom, Li+, Be++, etc. ions. The energy difference between the lowest triplet and singlet states strongly depends on the electron (hole) effective mass, dielectric permittivity of the solid and the distance from the surface. Pair interaction of the identical surface defects (two doubly charged impurities or vacancies with two electrons or holes) reveals the ferromagnetic spin state with the maximal exchange energy at the definite distance between the defects (~5-25 nm). We obtained that the nonmagnetic singlet state is the lowest one for a molecule with two electrons formed by a pair of identical surface impurities (like surface hydrogen), while its next state with deep enough negative energy minimum is the magnetic triplet. The metastable magnetic triplet state appeared for such molecule at the surface indicates the possibility of metastable orto-states of the hydrogen-like molecules, while they are absent in the bulk of material. We hope that obtained results could provide an alternative mechanism of the room temperature ferromagnetism observed in TiO2, HfO2, and In2O3 thin films with contribution of the oxygen vacancies.

preprint2010arXiv

Thermodynamics of Electromechanically-Coupled Mixed Ionic-Electronic Conductors: Deformation potential, Vegard strains and Flexoelectric effect

Strong coupling among external voltage, electrochemical potentials, concentrations of electronic and ionic species, and strains is a ubiquitous feature of solid state mixed ionic-electronic conductors (MIECs), the materials of choice in devices ranging from electroresistive and memristive elements to ion batteries and fuel cells. Here, we analyze in detail the electromechanical coupling mechanisms and derive generalized bias-concentration-strain equations for MIECs including effects of concentration-driven chemical expansion, deformation potential, and flexoelectric effect contributions. This analysis is extended towards the bias-induced strains in the uniform and scanning probe microscopy-like geometries. Notably, the contribution of the electron-phonon and flexoelectric coupling to the local surface displacement of the mixed ionic-electronic conductor caused by the electric field scanning probe microscope tip has not been considered previously. The developed thermodynamic approach allows evolving theoretical description of mechanical phenomena induced by the electric fields (electro-mechanical response) in solid state ionics towards analytical theory and phase-field modeling of the MIECs in different geometries and under varying electrical, chemical, and mechanical boundary conditions.

preprint2009arXiv

Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures

Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the inhomogeneous electric field induced by the nanosized tip of the Scanning Probe Microscope (SPM) probe) the thickness and charge of the interface layer drastically changes, it particular the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.

preprint2009arXiv

Phase Diagrams and Domain Splitting in Thin Ferroelectric Films with Incommensurate Phases

We studied the phase diagram of thin ferroelectric films with incommensurate phases and semiconductor properties within the framework of Landau-Ginzburg-Devonshire theory. We performed both analytical calculations and phase-field modelling of the temperature and thickness dependencies of the period of incommensurate 180 degree domain structures appeared in thin films covered with perfect electrodes. It is found that the transition temperature from the paraelectric into the incommensurate phase as well as the period of incommensurate domain structure strongly depend on film thickness, and surface and gradient energy contributions. The results may provide insight on the temperature dependence of domain structures in nanosized ferroics with inherent incommensurate phases.

preprint2009arXiv

Pyroelectric response of ferroelectric nanoparticles: size effect and electric energy harvesting

The size effect on pyroelectric response of ferroelectric nanowires and nanotubes is analyzed. The pyroelectric coefficient strongly increases with the wire radius decrease and diverges at critical radius Rcr corresponding to the size-driven transition into paraelectric phase. Size-driven enhancement of pyroelectric coupling leads to the giant pyroelectric current and voltage generation by the polarized ferroelectric nanoparticles in response to the temperature fluctuation. The maximum efficiency of the pyroelectric energy harvesting and bolometric detection is derived, and is shown to approach the Carnot limit for low temperatures.

preprint2009arXiv

Surface and size effect on fluctuations correlation in nanoparticles with long-range order

Surface and size effect on the order parameter fluctuations and critical phenomena in the intensively studied 3D-confined nanosized systems with long-range order was not considered theoretically, while the calculations for bulk samples and thick films were performed long ago. Since widely used magnetic resonance, diffraction and scattering methods collect information about both macro- and nanosystems via the structural factors, which are directly related with fluctuations correlator, analytical expressions for the correlation function of the order parameter fluctuations seem extremely necessary for quantitative analyses of the experimental data broad spectrum. In the letter we solve the vital problem within Landau-Ginzburg-Devonshire phenomenological approach for the particles of arbitrary shape and consider concrete examples of the spherical and cylindrical ferroic nanoparticles. Allowing for the strong surface energy contribution, analytical expressions derived for Ornstein-Zernike correlator of the long-range order parameter fluctuations in 3D-confined system, dynamic generalized susceptibility, relaxation times and correlation radii discrete spectrum are principally different from those known for bulk system. Besides the great importance of the fluctuations correlation function for the analyses of scattering and magnetic resonance experimental spectra, proposed expression for fluctuations strength defines the fundamental limit of phenomenological theory applicability for 3D-confined nanosystems.

preprint2005arXiv

Ferroelectric thin films phase diagrams with self-polarized phase and electret state

In present work we calculated the three components of polarization in phenomenological theory framework by consideration of three Euler-Lagrange equations, which include mismatch effect and influence of misfit dislocations, surface piezoelectric effect caused by broken symmetry on the film surface, surface tension and depolarization field. These equations were solved with the help of variational method proposed by us earlier. This approach lead to the free energy in the form of algebraic equation of different powers of polarization components with the coefficients dependent on film thickness, mismatch effect, temperature and other parameters. Several new terms proportional to misfit strain appeared in the free energy expression: built-in electric field normal to the surface originated from piezoelectricity in vicinity of surface even for the cubic symmetry of bulk ferroelectrics, odd powers of normal to the surface component of polarization. The obtained free energy made it possible to calculate all properties of the film by conventional procedure of minimization. As an example we calculated phase diagrams of PZT 50/50 films on different substrates that lead to compressive or tensile strain. The calculations of pyroelectric coefficient and dielectric permittivity temperature dependencies had shown the electret-like polar state, e.g. existence of pyroelectricity, below the critical thickness of ferroelectric-paraelectric phase transitions. Our theory predicts, that mismatch-induced field could be compatible with thermodynamic coercive field and thus cause self-polarization in thin ferroelectric films.