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S. V. Kalinin

S. V. Kalinin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.other

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Published work

19 published item(s)

preprint2021arXiv

Reconstruction of the interatomic forces from dynamic Scanning Transmission Electron Microscopy data

We explore the possibility for the reconstruction of the generative physical models describing interactions between atomic units in solids from observational electron microscopy data. Here, scanning transmission electron microscopy (STEM) is used to observe the dynamic motion of Si atoms at the edge of monolayer graphene under continuous electron beam illumination. The resulting time-lapsed STEM images represent the snapshots of observed chemical states of the system. We use two approaches: potential of mean force (PMF) calculation using a radial distribution function (RDF) and a direct fitting of the graphene-Si interatomic pair-wise potentials with force matching, to reconstruct the force fields in the materials. These studies lay the foundation for quantitative analysis of materials energetics from STEM data through the sampling of the metastable states in the chemical space of the system.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Finite size effects of hysteretic dynamics in multi-layer graphene on ferroelectric

The origin and influence of finite size effects on the nonlinear dynamics of space charge stored by multi layer graphene on ferroelectric and the resistivity of graphene channel were analyzed using self-consistent continuum media approach. Revealed size effects peculiarities are governed by the relations between the thicknesses of multi layer graphene, ferroelectric film and dielectric layer between them. Appearance of charge and electroresistance hysteresis loops and their versatility steam from the interplay of polarization reversal dynamics in alternating electric field and its incomplete screening, which features are mostly determined by the dielectric layer thickness. We further investigate the effects of spatially nonuniform ferroelectric domain structures on graphene layer conductivity and predict its dramatic increase under the transition from multi to single domain state in ferroelectric. The intriguing effects can open new possibilities for graphene based sensors and explore the physical mechanisms underlying the operation of graphene field effect transistor with ferroelectric gating.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Self-consistent modelling of nonlinear dynamic ESM microscopy in mixed ionic-electronic conductors

Dynamic Electrochemical Strain Microscopy (ESM) response of mixed ionic-electronic conductors is analysed in the framework of the Thomas-Fermi screening theory and Vegard law with accounting of the steric effects. The emergence of dynamic charge waves and nonlinear deformation of the surface as result of applying probing voltage is numerically explored. 2D maps of the strain and concentration distribution across the mixed ionic-electronic conductor and bias-induced surface displacements for ESM microscopy were calculated. Obtained numerical results can be of applied to quantify ESM response of Li-based solid electroytes, materials with resistive switching and electroactive ferroelectric polymers, which are of potential interest for flexible and high-density non-volatile memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Roto-flexoelectric coupling impact on the phase diagrams and pyroelectricity of thin SrTiO3 films

The influence of the flexoelectric and rotostriction coupling on the phase diagrams of ferroelastic-quantum paraelectric SrTiO3 films was studied using Landau-Ginzburg-Devonshire (LGD) theory. The phase diagrams in coordinates temperature - film thickness were calculated for different epitaxial misfit strains. Tensile misfit strains stimulate appearance of the spontaneous out-of-plane structural order parameter (displacement vector of an appropriate oxygen atom from its cubic position) in the structural phase. Compressive misfit strains stimulate appearance of the spontaneous in-plane structural order parameter. Gradients of the structural order parameter components, which inevitably exist in the vicinity of film surfaces due to the termination and symmetry breaking, induce improper polarization and pyroelectric response via the flexoelectric and rotostriction coupling mechanism. Flexoelectric and rotostriction coupling results in the roto-flexoelectric field that is antisymmetric inside the film, small in the central part of the film, where the gradients of the structural parameter are small, and maximal near the surfaces, where the gradients of the structural parameter are highest. The field induces improper polarization and pyroelectric response. Penetration depths of the improper phases (both polar and structural) can reach several nm from the film surfaces. An improper pyroelectric response of thin films is high enough to be registered with planar-type electrode configurations by conventional pyroelectric methods.

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preprint2012arXiv

Surface polar states and pyroelectricity in ferroelastics induced by flexo-roto field

Theoretical analysis based on the Landau-Ginzburg-Devonshire (LGD) theory is used to show that the joint action of flexoelectric effect and rotostriction leads to a large spontaneous in-plane polarization (~ 1-5 muC/cm2) and pyroelectric coefficient (~10^-3 C/m2K) in the vicinity of surfaces of otherwise non-ferroelectric ferroelastics, such as SrTiO3, with static octahedral rotations. The origin of the improper polarization and pyroelectricity is an electric field we name flexo-roto field whose strength is proportional to the convolution of the flexoelectric and rotostriction tensors with octahedral tilts and their gradients. Flexo-roto field should exist at surfaces and interfaces in all structures with static octahedral rotations, and thus it can induce surface polar states and pyroelectricity in a large class of otherwise nonpolar materials.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Direct Observation of an Interface Dipole between Two Metallic Oxides Caused by Localized Oxygen Vacancies

Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and density-functional calculations. Cation displacements are observed at the interface, indicative of a dipole-like electric field even though both materials are nominally metallic. The observed displacements are reproduced by theory if O vacancies are present in the near-interface LSMO layers. The results suggest that atomic-scale structural mapping can serve as a quantitative indicator of the presence of O vacancies at interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrochemical Strain Microscopy with Blocking Electrodes: The Role of Electromigration and Diffusion

Electrochemical strains are a ubiquitous feature of solid state ionic devices ranging from ion batteries and fuel cells to electroresistive and memristive memories. Recently, we proposed a scanning probe microscopy (SPM) based approach, referred as electrochemical strain microscopy (ESM), for probing local ionic flows and electrochemical reactions in solids based on bias-strain coupling. In ESM, the sharp SPM tip concentrates the electric field in a small (10-50 nm) region of material, inducing interfacial electrochemical processes and ionic flows. The resultant electrochemical strains are determined from dynamic surface displacement and provide information on local electrochemical functionality. Here, we analyze image formation mechanism in ESM for a special case of mixed electronic-ionic conductor with blocking tip electrode, and determine frequency dependence of response, role of diffusion and electromigration effects, and resolution and detection limits.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Frequency Dependent Dynamical Electromechanical Response of Mixed Ionic-Electronic Conductors

Frequency dependent dynamic electromechanical response of the mixed ionic-electronic conductor film to a periodic electric bias is analyzed for different electronic and ionic boundary conditions. Dynamic effects of mobile ions concentration (stoichiometry contribution), charge state of acceptors (donors), electron concentration (electron-phonon coupling via the deformation potential) and flexoelectric effect contribution are discussed. A variety of possible nonlinear dynamic electromechanical response of MIEC films including quasi-elliptic curves, asymmetric hysteresis-like loops with pronounced memory window and butterfly-like curves are calculated. The electromechanical response of ionic semiconductor is predicted to be a powerful descriptor of local valence states, band structure and electron-phonon correlations that can be readily measured in the nanoscale volumes and in the presence of strong electronic conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Nanoscale Electromechanics of Paraelectric Materials with Mobile Charges: Size effects and Nonlinearity of Electromechanical Response of SrTiO3 Films

Nanoscale enables a broad range of electromechanical coupling mechanisms that are forbidden or negligible in the materials. We conduct a theoretical study of the electromechanical response of thin paraelectric films with mobile vacancies (or ions) paradigmatic for capacitor-type measurements in X-ray scattering, piezoresponse force microscopy (PFM), and electrochemical strain microscopy (ESM). Using quantum paraelectric SrTiO3 film as a model material with well known electromechanical, electronic and electrochemical properties, we evaluate the contributions of electrostriction, Maxwell stress, flexoelectric effect, deformation potential and compositional Vegard strains caused by mobile vacancies (or ions) and electrons to the electromechanical response. The local electromechanical response manifests strong size effects, the scale of which is determined by the ratio of the SrTiO3 film thickness and PFM/ESM tip size to the carriers screening radius. Due to the strong dielectric nonlinearity effect inherent in quantum paraelectrics, the dependence of the SrTiO3 film electromechanical response on applied voltage demonstrates a pronounced crossover from the linear to the quadratic law and then to the sub-linear law with a factor of 2/3 under the voltage increase. The temperature dependence of the electromechanical response as determined by the interplay between the dielectric susceptibility and the screening radius is non-monotonic and has a pronounced maxima, the position and width of which can be tuned by film thickness. This study provides a comparative framework for analysis of electromechanical coupling in the non-piezoelectric nanosystems.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electromechanical Probing of Ionic Currents in Energy Storage Materials

The electrochemical processes in energy storage materials are generally linked with changes of molar volume of the host compound. Here, the frequency dependent strain response of 1D electrochemically active systems to periodic electric bias is analyzed. The sensitivity and resolution of these electrochemical strain measurements are compared to the current-based electrochemical impedance spectroscopy. The resolution and detection limits of interferometric and atomic force microscopy based systems for probing electrochemical reactions on the nanoscale are analyzed.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Landau-Ginzburg-Devonshire theory for electromechanical hysteresis loop formation in piezoresponse force microscopy of thin films

Electromechanical hysteresis loop formation in piezoresponse force microscopy of thin ferroelectric films is studied with special emphasis on the effects of tip size and film thickness, as well as dependence on the tip voltage frequency. Here, we use a combination of Landau-Ginzburg-Devonshire (LGD) theory for the description of the local polarization reversal with decoupling approximation for the calculation of the local piezoresponse loops shape, coercive voltages and amplitude. LGD approach enables addressing both thermodynamics and kinetics of hysteresis loop formation. In contrast to the "rigid" ferroelectric approximation, this approach allows for the piezoelectric tensor components dependence on the ferroelectric polarization and dielectric permittivity. This model rationalizes the non-classical shape of the dynamic piezoelectric force microscopy (PFM) loops.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Local probing of ionic diffusion by electrochemical strain microscopy: spatial resolution and signal formation mechanisms

Electrochemical insertion-deintercalation reactions are typically associated with significant change of molar volume of the host compound. This strong coupling between ionic currents and strains underpins image formation mechanisms in electrochemical strain microscopy (ESM), and allows exploring the tip-induced electrochemical processes locally. Here we analyze the signal formation mechanism in ESM, and develop the analytical description of operation in frequency and time domains. The ESM spectroscopic modes are compared to classical electrochemical methods including potentiostatic and galvanostatic intermittent titration (PITT and GITT), and electrochemical impedance spectroscopy (EIS). This analysis illustrates the feasibility of spatially resolved studies of Li-ion dynamics on the sub-10 nanometer level using electromechanical detection.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Local Probing of Mesoscopic Physics of Ferroelectric Domain Walls

Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range of polarization reversal behaviors in the vicinity of the initially flat 180°ferroelectric domain wall. The nucleation bias is found to increase by an order of magnitude from a 2D nucleus at the wall to 3D nucleus in the bulk. The wall is thus significantly ferroelectrically softer than the bulk. The wall profoundly affects switching on length scales of the order of micrometers. The mechanism of correlated switching is analyzed using analytical theory and phase-field modeling. The long-range effect is ascribed to wall bending under the influence of a tip bias well below the bulk nucleation field and placed many micrometers away from the wall. These studies provide an experimental link between the macroscopic and mesoscopic physics of domain walls and atomistic models of nucleation.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Strain-voltage and current-voltage Scanning Probe Microscopy (SPM) response of ionic semiconductor thin films: probing of deformation potential

We performed analytical calculations of the current-voltage and strain-voltage response of the heterostructure like "charged SPM tip electrode / gap / ionic-semiconductor film" caused by the local changes of (a) ions concentration (stoichiometry contribution); (b) acceptors (donors) charge state (recharging contribution via ionic radius variation); (c) free electrons (holes) concentration (electron-phonon coupling via the deformation potential). The contribution (b) into the strain-voltage SPM was not calculated previously, while the contribution (c) was not even predicted before, while our estimations performed for correlated oxides show that strength of (c) appeared comparable with (a,b). For the case of ion-blocking tip and substrate electrode mainly the changes in holes (electrons) concentration contribute into the voltage-dependent mechanical displacement of the film surface, directly registered by strain SPM. Thus, we predict that the SPM measurements of the ionic semiconductor surface displacement could provide important information about the local changes of the acceptors (donors) charge state and electron (hole)-phonon correlations via the deformation potential. We obtained the great variety of the nonlinear static and dynamic current-voltage and strain-voltage hysteresis loops in the ionic semiconductor thin film with mobile acceptors (donors) and holes (electrons). Some types of the current-voltage hysteresis with pronounced memory window and double loops are observed experimentally in the correlated oxides and resistive switching materials like p-La1-xSrxMnO3-d and La1-xSrxCoO3-d, while predicted strain-voltage hysteresis of piezoelectric-like and butterfly-like shape requires experimental justification by SPM.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Suppression of Octahedral Tilts and Associated Changes of Electronic Properties at Epitaxial Oxide Heterostructure Interfaces

Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell mapping of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7Sr0.3MnO3 interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Thermodynamics of Electromechanically-Coupled Mixed Ionic-Electronic Conductors: Deformation potential, Vegard strains and Flexoelectric effect

Strong coupling among external voltage, electrochemical potentials, concentrations of electronic and ionic species, and strains is a ubiquitous feature of solid state mixed ionic-electronic conductors (MIECs), the materials of choice in devices ranging from electroresistive and memristive elements to ion batteries and fuel cells. Here, we analyze in detail the electromechanical coupling mechanisms and derive generalized bias-concentration-strain equations for MIECs including effects of concentration-driven chemical expansion, deformation potential, and flexoelectric effect contributions. This analysis is extended towards the bias-induced strains in the uniform and scanning probe microscopy-like geometries. Notably, the contribution of the electron-phonon and flexoelectric coupling to the local surface displacement of the mixed ionic-electronic conductor caused by the electric field scanning probe microscope tip has not been considered previously. The developed thermodynamic approach allows evolving theoretical description of mechanical phenomena induced by the electric fields (electro-mechanical response) in solid state ionics towards analytical theory and phase-field modeling of the MIECs in different geometries and under varying electrical, chemical, and mechanical boundary conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Finite size and intrinsic field effect on the polar-active properties of the ferroelectric-semiconductor heterostructures

Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the inhomogeneous electric field induced by the nanosized tip of the Scanning Probe Microscope (SPM) probe) the thickness and charge of the interface layer drastically changes, it particular the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Pyroelectric response of ferroelectric nanoparticles: size effect and electric energy harvesting

The size effect on pyroelectric response of ferroelectric nanowires and nanotubes is analyzed. The pyroelectric coefficient strongly increases with the wire radius decrease and diverges at critical radius Rcr corresponding to the size-driven transition into paraelectric phase. Size-driven enhancement of pyroelectric coupling leads to the giant pyroelectric current and voltage generation by the polarized ferroelectric nanoparticles in response to the temperature fluctuation. The maximum efficiency of the pyroelectric energy harvesting and bolometric detection is derived, and is shown to approach the Carnot limit for low temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Spatially Resolved Mapping of Local Polarization Dynamics in an Ergodic Phase of Ferroelectric Relaxor

Spatial variability of polarization relaxation kinetics in relaxor ferroelectric 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 is studied using time-resolved Piezoresponse Force Microscopy. Local relaxation attributed to the reorientation of polar nanoregions is shown to follow stretched exponential dependence, exp(-(t/tau)^beta), with beta~~0.4, much larger than the macroscopic value determined from dielectric spectra (beta~~0.09). The spatial inhomogeneity of relaxation time distributions with the presence of 100-200 nm "fast" and "slow" regions is observed. The results are analyzed to map the Vogel-Fulcher temperatures on the nanoscale.

0 citations0 reviewsNo code linkedOpen access