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Researcher profile

A. N. Morozovska

A. N. Morozovska contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

5 published item(s)

preprint2013arXiv

Hysteretic phenomena in graphene's conductivity

A model for the rival mechanisms of hysteresis in graphene channel resistivity on a substrate of different nature dependence on a gate voltage - a direct one (caused by adsorbates with dipole moment on surface and interface) and an inverse one (caused by capture of free carriers from graphene onto localized states on graphene-substrate interface) is proposed. Possible discrimination of these two channels by variation of the gate voltage sweep rate is discussed. Our theory predictions are in good correlation with experimental data, available in literature.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Direct Observation of an Interface Dipole between Two Metallic Oxides Caused by Localized Oxygen Vacancies

Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and density-functional calculations. Cation displacements are observed at the interface, indicative of a dipole-like electric field even though both materials are nominally metallic. The observed displacements are reproduced by theory if O vacancies are present in the near-interface LSMO layers. The results suggest that atomic-scale structural mapping can serve as a quantitative indicator of the presence of O vacancies at interfaces.

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preprint2010arXiv

Defect driven ferroelectricity and magnetism in nanocrystalline KTaO3

Nominally pure nanocrystalline KTaO3 was thoroughly investigated by micro-Raman and magnetic resonance spectroscopic techniques. In all samples the defect driven ferroelectricity and magnetism are registered. Both ordering states are suggested to appear due to the iron atoms and oxygen vacancies. The concentration of defects was estimated to be 0.04 and 0.06-0.1 mole %, respectively. Note that undoped single crystals of KTaO3 are nonmagnetic and have never exhibited ferromagnetic properties. The results enable us to refer a nanosized KTa(Fe)O3 to the class of multiferroics and assume that it could perform the magnetoelectric effect at T<29 K. It was also established that the critical concentration of impurity defects necessary to provoke the appearance of the new phase states in the material strongly correlates with the size of the particle; as the size of the particle decreases, the critical concentration decreases as well.

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preprint2010arXiv

Local Probing of Mesoscopic Physics of Ferroelectric Domain Walls

Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range of polarization reversal behaviors in the vicinity of the initially flat 180°ferroelectric domain wall. The nucleation bias is found to increase by an order of magnitude from a 2D nucleus at the wall to 3D nucleus in the bulk. The wall is thus significantly ferroelectrically softer than the bulk. The wall profoundly affects switching on length scales of the order of micrometers. The mechanism of correlated switching is analyzed using analytical theory and phase-field modeling. The long-range effect is ascribed to wall bending under the influence of a tip bias well below the bulk nucleation field and placed many micrometers away from the wall. These studies provide an experimental link between the macroscopic and mesoscopic physics of domain walls and atomistic models of nucleation.

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preprint2010arXiv

Strain-voltage and current-voltage Scanning Probe Microscopy (SPM) response of ionic semiconductor thin films: probing of deformation potential

We performed analytical calculations of the current-voltage and strain-voltage response of the heterostructure like &#34;charged SPM tip electrode / gap / ionic-semiconductor film&#34; caused by the local changes of (a) ions concentration (stoichiometry contribution); (b) acceptors (donors) charge state (recharging contribution via ionic radius variation); (c) free electrons (holes) concentration (electron-phonon coupling via the deformation potential). The contribution (b) into the strain-voltage SPM was not calculated previously, while the contribution (c) was not even predicted before, while our estimations performed for correlated oxides show that strength of (c) appeared comparable with (a,b). For the case of ion-blocking tip and substrate electrode mainly the changes in holes (electrons) concentration contribute into the voltage-dependent mechanical displacement of the film surface, directly registered by strain SPM. Thus, we predict that the SPM measurements of the ionic semiconductor surface displacement could provide important information about the local changes of the acceptors (donors) charge state and electron (hole)-phonon correlations via the deformation potential. We obtained the great variety of the nonlinear static and dynamic current-voltage and strain-voltage hysteresis loops in the ionic semiconductor thin film with mobile acceptors (donors) and holes (electrons). Some types of the current-voltage hysteresis with pronounced memory window and double loops are observed experimentally in the correlated oxides and resistive switching materials like p-La1-xSrxMnO3-d and La1-xSrxCoO3-d, while predicted strain-voltage hysteresis of piezoelectric-like and butterfly-like shape requires experimental justification by SPM.

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