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Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs

Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.

preprint2005arXivOpen access
S. SchmultC. GerlU. WurstbauerC. MitzkusW. Wegscheider
cond-mat.mes-hall
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Open access5 authors1 topic
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S. SchmultC. GerlU. WurstbauerC. MitzkusW. Wegscheider

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