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S. P. Heluani

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cond-mat.mtrl-sci physics.ins-det

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preprint2015arXiv

Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires

The magneto-transport properties of single proton-implanted ZnO and of Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7\%) doped ZnO microwires showed a non monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implantation and Li doping. The magnetic field dependence of the resistance might be explained by the formation of a magnetic/non magnetic heterostructure in the wire after proton implantation.

preprint2014arXiv

Aluminium as catalyst for ZnO nanostructures growth

We report the growth of Al-catalysed ZnO nanowires (NWs) using a thermal evaporation technique.Before the growth, the substrates were covered with a distribution of Al nano-island that act as seeds. We found that the density of NWs increases as the density of seeds is increased, confirming the catalyst properties of Al. The critical parameters of growth are the substrate temperature, oxygen partial pressure and the thickness of the initial Al layer from which the seeds are formed. The results showed that the oxygen pressure has a strong influence on the structural characteristics: the nanowires exhibit a preferential orientation in the (00l)-planes when they are grown at low oxygen flow, and they become polycrystalline when a high concentration of oxygen in the flow is used. We consider that the growth occurs via a vapor-solid-solid (VSS) process as the predominant growth mechanism.

preprint2012arXiv

The convergence method to calculate particles fluxes in x rays spectrometry techniques. Application in nuclear compounds

A method to calculate particle fluxes applicable in most of the spectroscopy techniques is described. Flux intensities of backscattered or absorbed electrons and emitted photons are calculated using a method of convergence to solve the Invariant Embedding equations that are used to describe the particle trajectories inside a solid sample. Our results are found to be helpful to carry out a procedure for quantitative characterization using instrument such as Electron Probe Microanalysis or other probes. Examples of application to calculate the composition of ternary alloys are given and are compared with the same calculations using another procedure.

preprint2011arXiv

Evidence of defect-induced ferromagnetism in ZnFe$_{2}$O$_{4}$ thin films

X-ray absorption near-edge and grazing incidence X-ray fluorescence spectroscopy are employed to investigate the electronic structure of ZnFe$_{2}$O$_{4}$ thin films. The spectroscopy techniques are used to determine the non-equilibrium cation site occupancy as a function of depth and oxygen pressure during deposition and its effects on the magnetic properties. It is found that low deposition pressures below 10$^{-3}$ mbar cause iron superoccupation of tetrahedral sites without Zn$^{2+}$ inversion, resulting in an ordered magnetic phase with high room temperature magnetic moment.

preprint2010arXiv

ZnO:Co Diluted Magnetic Semiconductor or Hybrid Nanostructure for Spintronics?

We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2+. The obtained negative values of the Curie-Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms.

preprint2009arXiv

Changes in the electrical transport of ZnO under visible light

Complex impedance spectroscopy data in the frequency range 16Hz < f < 3 MHz at room temperature were acquired on pure ZnO single crystal and thin film. The measured impedance of the ZnO samples shows large changes with time after exposure to or covering them from visible light. At fixed times Cole-Cole-diagrams indicate the presence of a single relaxation process. A simple analysis of the impedance data allows us to obtain two main relaxation times. The behavior for both, ZnO crystal and thin film, is similar but the thin film shows shorter relaxation times. The analysis indicates the existence of two different photo-active defects with activation energies between ~0.8 eV and ~1.1 eV.